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1. 发明申请

US20070040500A1 Barrier film for light-emitting display and method for producing same 审中-公开
标题翻译：发光显示器用阻挡膜及其制造方法
公开(公告)号：US20070040500A1
公开(公告)日：2007-02-22
申请号：US10578592
申请日：2004-10-29
申请人： Masahiko Fukuda , Kazuyoshi Inoue , Mitsuru Eida , Hitoshi Kuma
发明人： Masahiko Fukuda , Kazuyoshi Inoue , Mitsuru Eida , Hitoshi Kuma
IPC分类号： H05B33/06
CPC分类号： C03C17/245 , C03C17/02 , C03C2217/213 , C03C2217/214 , C03C2217/228 , C03C2217/23 , C03C2218/15 , H01L51/5036 , H01L51/5253
摘要： A barrier film which can effectively protect an organic EL device, an efficient method for producing the barrier film, and a light-emitting display exhibiting excellent durability in which a non-emission area such as the dark spot occurs to only a small extent are provided. A method for producing a barrier film for light-emitting displays including a glass material containing three or more components, the barrier film being formed by a vapor deposition method. A light-emitting display including a supporting substrate 1, an emitting layer 2, and the barrier film 3 produced by the method. The barrier film can be produced with a target containing 50 to 90 wt % of silicon oxide, 5 to 20 wt % of boron oxide and 1 to 10 wt % of aluminum oxide by sputtering method.
摘要翻译：可以有效地保护有机EL器件的阻挡膜，用于制造阻挡膜的有效方法以及显示优异的耐久性的发光显示器，其中只有很小程度地发生诸如黑斑的非发光区域。。一种用于制造包括含有三种或更多种成分的玻璃材料的发光显示器的阻挡膜的方法，所述阻挡膜通过气相沉积法形成。一种发光显示器，其包括通过该方法制造的支撑基板1，发光层2和阻挡膜3。可以通过溅射法用含有50〜90重量％的氧化硅，5〜20重量％的氧化硼和1〜10重量％的氧化铝的靶来制造阻挡膜。

2. 发明申请

US20070262705A1 Organic Electroluminescence Display Device 审中-公开
标题翻译：有机电致发光显示装置
公开(公告)号：US20070262705A1
公开(公告)日：2007-11-15
申请号：US11547277
申请日：2005-03-23
申请人： Masahiko Fukuda , Kazuyoshi Inoue , Mitsuru Eida , Chishio Hosokawa
发明人： Masahiko Fukuda , Kazuyoshi Inoue , Mitsuru Eida , Chishio Hosokawa
IPC分类号： H01J1/62
CPC分类号： H01L51/5253 , H01L27/322 , H01L27/3244 , H01L27/3281 , H01L2251/5346
摘要： An organic EL display including an organic EL device 2 and a barrier film 3 which seals the organic EL device 2 and includes a conductive film. An organic EL display including an organic EL device, a color conversion layer, and a barrier film which seals the color conversion layer and includes a conductive film. An organic EL display including an organic EL device 2 and a barrier film 3 which seals the organic EL device 2 and includes a stress reducing layer 3b.
摘要翻译：一种有机EL显示器，包括密封有机EL器件2并包括导电膜的有机EL器件2和阻挡膜3。一种有机EL显示器，包括有机EL器件，颜色转换层和密封彩色转换层并包括导电膜的阻挡膜。一种有机EL显示器，包括有机EL器件2和阻挡膜3，该有机EL器件2和阻挡膜3密封有机EL器件2并且包括应力减小层3b。

3. 发明申请

US20090066228A1 ORGANIC ELECTROLUMINESCENCE ELEMENT 审中-公开
标题翻译：有机电致发光元件
公开(公告)号：US20090066228A1
公开(公告)日：2009-03-12
申请号：US11913272
申请日：2006-05-08
申请人： Shigekazu Tomai , Kazuyoshi Inoue , Hitoshi Kuma
发明人： Shigekazu Tomai , Kazuyoshi Inoue , Hitoshi Kuma
IPC分类号： H01J1/62
CPC分类号： H01L51/5278 , H01L51/5262
摘要： An organic electroluminescent device (1) including: a transparent electrode (12); a counter electrode (14) opposite to the transparent electrode (12); and one or more multilayered structures between the transparent electrode (12) and the counter electrode (14), the structure including two organic emitting layers (20) and (22) and an intermediate conductive layer (30) between the organic emitting layers (20) and (22), the refractive index na of the intermediate conductive layer (30) being different from the refractive index nb of at least one of the organic emitting layers by 0.25 or less, the intermediate conductive layer (30) containing an oxide containing one or more types of rare earth elements.
摘要翻译：一种有机电致发光器件（1），包括：透明电极（12）; 与所述透明电极（12）相对的对置电极（14）。以及在所述透明电极（12）和所述对电极（14）之间的一个或多个多层结构，所述结构包括在所述有机发射层（20）和所述有机发射层（20）之间的两个有机发光层（20）和（22）以及中间导电层）和（22），所述中间导电层（30）的折射率na与所述有机发光层中的至少一个的折射率nb不同，所述中间导电层（30）含有含有一种或多种类型的稀土元素。

4. 发明申请

US20090267030A1 SINTERED BODY FOR VACUUM VAPOR DEPOSITION 审中-公开
标题翻译：用于真空蒸发沉积的烧结体
公开(公告)号：US20090267030A1
公开(公告)日：2009-10-29
申请号：US12096925
申请日：2006-11-13
申请人： Shigekazu Tomai , Kazuyoshi Inoue , Masahiko Fukuda
发明人： Shigekazu Tomai , Kazuyoshi Inoue , Masahiko Fukuda
IPC分类号： H01B1/08
CPC分类号： C23C14/086 , C04B35/01 , C04B35/453 , C04B35/457 , C04B35/6262 , C04B35/62695 , C04B2235/3206 , C04B2235/3284 , C04B2235/3286 , C04B2235/5436 , C04B2235/5445 , C04B2235/6585 , C04B2235/72 , C04B2235/767 , C04B2235/77 , C04B2235/786 , C04B2235/96 , C04B2235/963 , C04B2235/9653 , C23C14/30
摘要： A sintered body for vacuum vapor deposition, the sintered body being a sintered body of an oxide containing at least one cation element; the cation element having an electronegativity of 1.5 or more; and the sintered body having a surface roughness of 3 μm or less and a bulk resistance of less than 1×10−1 Ω·cm.
摘要翻译：一种用于真空气相沉积的烧结体，所述烧结体是包含至少一种阳离子元素的氧化物的烧结体; 所述阳离子元素的电负性为1.5以上; 烧结体的表面粗糙度为3μm以下，体积电阻小于1×10 -1Ω·cm。

5. 发明授权

US09269573B2 Thin film transistor having crystalline indium oxide semiconductor film 有权
标题翻译：具有晶体氧化铟半导体膜的薄膜晶体管
公开(公告)号：US09269573B2
公开(公告)日：2016-02-23
申请号：US12212688
申请日：2008-09-18
申请人： Kazuyoshi Inoue , Koki Yano , Shigekazu Tomai , Futoshi Utsuno , Masashi Kasami , Kenji Goto , Hirokazu Kawashima
发明人： Kazuyoshi Inoue , Koki Yano , Shigekazu Tomai , Futoshi Utsuno , Masashi Kasami , Kenji Goto , Hirokazu Kawashima
IPC分类号： H01L29/10 , H01L21/02 , H01L29/786
CPC分类号： H01L21/02565 , H01L21/02422 , H01L21/02631 , H01L29/7869
摘要： To provide a thin film transistor having an indium oxide-based semiconductor film which allows only a thin metal film on the semiconductor film to be selectively etched. A thin film transistor having a crystalline indium oxide semiconductor film which is composed mainly of indium oxide and contains a positive trivalent metal oxide.
摘要翻译：为了提供一种薄膜晶体管，其具有仅允许选择性地蚀刻半导体膜上的薄金属膜的氧化铟基半导体膜。一种薄膜晶体管，其具有主要由氧化铟组成并含有正三价金属氧化物的结晶铟氧化物半导体膜。

6. 发明授权

US08785920B2 Semiconductor thin film, semiconductor thin film manufacturing method and semiconductor element 有权
公开(公告)号：US08785920B2
公开(公告)日：2014-07-22
申请号：US12598980
申请日：2008-04-23
申请人： Kazuyoshi Inoue , Futoshi Utsuno , Katsunori Honda
发明人： Kazuyoshi Inoue , Futoshi Utsuno , Katsunori Honda
IPC分类号： H01L29/10
摘要： An amorphous oxide thin film containing amorphous oxide is exposed to an oxygen plasma generated by exciting an oxygen-containing gas in high frequency. The oxygen plasma is preferably generated under the condition that applied frequency is 1 kHz or more and 300 MHz or less and pressure is 5 Pa or more. The amorphous oxide thin film is preferably exposed by a sputtering method, ion-plating method, vacuum deposition method, sol-gel method or fine particle application method.

7. 发明授权

US08773628B2 Thin film transistor, thin film transistor substrate, processes for producing the same, liquid crystal display using the same, and related devices and processes; and sputtering target, transparent electroconductive film formed by use of this, transparent electrode, and related devices and processes 有权
标题翻译：薄膜晶体管，薄膜晶体管基板，其制造方法，使用其的液晶显示器及相关的装置和工艺; 和溅射靶，使用该透明电极形成的透明导电膜，以及相关的器件和工艺
公开(公告)号：US08773628B2
公开(公告)日：2014-07-08
申请号：US13219814
申请日：2011-08-29
申请人： Kazuyoshi Inoue , Shigekazu Tomai , Masato Matsubara
发明人： Kazuyoshi Inoue , Shigekazu Tomai , Masato Matsubara
IPC分类号： G02F1/1343
CPC分类号： H01L29/78696 , C04B35/01 , C04B2235/3224 , C04B2235/3227 , C04B2235/3229 , C04B2235/3251 , C04B2235/3256 , C04B2235/3258 , C04B2235/3279 , C04B2235/3284 , C04B2235/3286 , C04B2235/3287 , C04B2235/3289 , C04B2235/5436 , C04B2235/5445 , C04B2235/77 , C23C14/08 , C23C14/3414 , G02F1/13439 , G02F1/136227 , G02F1/1368 , H01L23/53219 , H01L23/53247 , H01L27/12 , H01L27/124 , H01L29/458 , H01L29/4908 , H01L29/66765 , H01L2924/0002 , H01L2924/00
摘要： Provided are thin film transistor substrates, thin film transistor liquid crystal displays, thin film transistors, TFT substrates for liquid crystal displays, liquid crystal displays provided with TFT substrates and liquid crystals, pixel electrodes for driving a liquid crystals, and transparent electrodes, an processes for the preparation thereof.
摘要翻译：本发明提供薄膜晶体管基板，薄膜晶体管液晶显示器，薄膜晶体管，液晶显示器用TFT基板，TFT基板和液晶的液晶显示器，驱动液晶的像素电极和透明电极，用于制备。

8. 发明授权

US08623511B2 Sputtering target for oxide thin film and process for producing the sputtering target 有权
标题翻译：氧化物薄膜的溅射靶和溅射靶的制造方法
公开(公告)号：US08623511B2
公开(公告)日：2014-01-07
申请号：US12996598
申请日：2009-06-05
申请人： Hirokazu Kawashima , Koki Yano , Futoshi Utsuno , Kazuyoshi Inoue
发明人： Hirokazu Kawashima , Koki Yano , Futoshi Utsuno , Kazuyoshi Inoue
IPC分类号： B32B33/00
CPC分类号： H01L21/02565 , C04B35/01 , C04B35/453 , C04B35/6262 , C04B35/62655 , C04B35/62695 , C04B37/026 , C04B2235/3229 , C04B2235/3232 , C04B2235/3244 , C04B2235/3251 , C04B2235/3256 , C04B2235/3258 , C04B2235/3284 , C04B2235/3286 , C04B2235/3287 , C04B2235/3293 , C04B2235/40 , C04B2235/5409 , C04B2235/5436 , C04B2235/6027 , C04B2235/652 , C04B2235/656 , C04B2235/6562 , C04B2235/6565 , C04B2235/6567 , C04B2235/6581 , C04B2235/6586 , C04B2235/661 , C04B2235/76 , C04B2235/761 , C04B2235/77 , C04B2235/786 , C04B2235/80 , C04B2235/96 , C04B2235/963 , C04B2235/9661 , C04B2237/12 , C04B2237/34 , C04B2237/407 , C23C14/086 , C23C14/3414 , H01L21/02554 , H01L21/02631 , H01L29/7869 , Y10T428/31507
摘要： Disclosed is a sputtering target that can suppress the occurrence of anomalous discharge in the formation of an oxide semiconductor film by sputtering method and can continuously and stably form a film. Also disclosed is an oxide for a sputtering target that has a rare earth oxide C-type crystal structure and has a surface free from white spots (a poor appearance such as concaves and convexes formed on the surface of the sputtering target). Further disclosed is an oxide sintered compact that has a bixbyite structure and contains indium oxide, gallium oxide, and zinc oxide. The composition amounts (atomic %) of indium (In), gallium (Ga), and zinc (Zn) fall within a composition range satisfying the following formula: In/(In+Ga+Zn)
摘要翻译：公开了一种溅射靶，其可以通过溅射法抑制氧化物半导体膜形成中的异常放电的发生，并且可以连续且稳定地形成膜。还公开了具有稀土氧化物C型晶体结构并具有没有白点的表面（在溅射靶的表面上形成的凹凸等差的外观）的溅射靶的氧化物。进一步公开了具有双相结构并含有氧化铟，氧化镓和氧化锌的氧化物烧结体。铟（In），镓（Ga）和锌（Zn）的成分量（原子％）落在满足下式的组成范围内：In /（In + Ga + Zn）<0.75。

9. 发明授权

US08461583B2 Oxide semiconductor field effect transistor and method for manufacturing the same 有权
标题翻译：氧化物半导体场效应晶体管及其制造方法
公开(公告)号：US08461583B2
公开(公告)日：2013-06-11
申请号：US12810189
申请日：2008-12-19
申请人： Koki Yano , Hirokazu Kawashima , Kazuyoshi Inoue , Shigekazu Tomai , Masashi Kasami
发明人： Koki Yano , Hirokazu Kawashima , Kazuyoshi Inoue , Shigekazu Tomai , Masashi Kasami
IPC分类号： H01L29/786 , H01L29/221
CPC分类号： H01L29/263 , C23C14/086 , H01L29/7869
摘要： A field effect transistor including a semiconductor layer including a composite oxide which contains In, Zn, and one or more elements X selected from the group consisting of Zr, Hf, Ge, Si, Ti, Mn, W, Mo, V, Cu, Ni, Co, Fe, Cr, Nb, Al, B, Sc, Y and lanthanoids in the following atomic ratios (1) to (3): In/(In+Zn)=0.2 to 0.8 (1) In/(In+X)=0.29 to 0.99 (2) Zn/(X+Zn)=0.29 to 0.99 (3).
摘要翻译：一种场效应晶体管，包括：包含复合氧化物的半导体层，所述复合氧化物含有选自Zr，Hf，Ge，Si，Ti，Mn，W，Mo，V，Cu中的In，Zn和一种或多种元素X，（1）〜（3）中的In /（In + Zn）= 0.2〜0.8（1）In /（In） + X）= 0.29〜0.99（2）Zn /（X + Zn）= 0.29〜0.99（3）。

10. 发明授权

US08445903B2 Thin film transistor having a crystalline semiconductor film including indium oxide which contains a hydrogen element and method for manufacturing same 有权
标题翻译：具有包含含有氢元素的氧化铟的结晶半导体膜的薄膜晶体管及其制造方法
公开(公告)号：US08445903B2
公开(公告)日：2013-05-21
申请号：US13125577
申请日：2009-10-19
申请人： Kazuyoshi Inoue , Koki Yano , Shigekazu Tomai , Masashi Kasami , Hirokazu Kawashima , Futoshi Utsuno
发明人： Kazuyoshi Inoue , Koki Yano , Shigekazu Tomai , Masashi Kasami , Hirokazu Kawashima , Futoshi Utsuno
IPC分类号： H01L29/12
CPC分类号： H01L29/7869 , H01L29/66742
摘要： A thin film transistor including a gate electrode, a gate-insulating film, an oxide semiconductor film in contact with the gate-insulating film, and source and drain electrodes which connect to the oxide semiconductor film and are separated with a channel part therebetween, wherein the oxide semiconductor film comprises a crystalline indium oxide which includes hydrogen element, and the content of the hydrogen element contained in the oxide semiconductor film is 0.1 at % to 5 at % relative to all elements which form the oxide semiconductor film.
摘要翻译：一种薄膜晶体管，包括栅电极，栅极绝缘膜，与栅极绝缘膜接触的氧化物半导体膜，以及连接到氧化物半导体膜并与其间的沟道部分分离的源极和漏极，其中氧化物半导体膜包括包含氢元素的结晶铟氧化物，并且氧化物半导体膜中包含的氢元素的含量相对于形成氧化物半导体膜的所有元素为0.1at％至5at％。

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