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    • 10. 发明授权
    • Magnetoresistance effect film and method of forming same
    • 磁阻效应膜及其形成方法
    • US06808740B2
    • 2004-10-26
    • US10462683
    • 2003-06-17
    • Hiroyuki AkinagaMasaharu OshimaMasaki Mizuguchi
    • Hiroyuki AkinagaMasaharu OshimaMasaki Mizuguchi
    • B05D500
    • B82Y25/00B82Y10/00G01R33/09G11B5/376G11B5/3993G11B2005/3996H01F10/193H01F10/324H01F10/3254Y10T428/12465Y10T428/12681
    • A magnetoresistance effect film includes a substrate, a plurality of ferromagnetic particles disposed on the substrate, a nonmagnetic film deposited on the substrate and covering the plurality of ferromagnetic particles, and a pair of electrodes arranged on the nonmagnetic film, in which the resistance across the pair of electrodes is changed by applying a magnetic field. The magnetoresistance effect film is manufactured by vapor-depositing ferromagnetic particle starting material on a substrate at a temperature not exceeding 300° C., the starting material being vapor-deposited in an amount enough to cover the substrate surface to a thickness ranging from 0.5 to 15 nm, and, after formation of ferromagnetic particles on the substrate, vapor-depositing at a temperature not exceeding room temperature a nonmagnetic film over the ferromagnetic particles, the nonmagnetic film having a thickness ranging from 1 to 100 nm, and providing a pair of electrodes each at a predetermined position on the nonmagnetic film.
    • 磁阻效应膜包括基板,设置在基板上的多个铁磁性粒子,沉积在基板上并覆盖多个铁磁性粒子的非磁性膜,以及配置在非磁性膜上的一对电极, 通过施加磁场来改变一对电极。 磁阻效应膜通过在不超过300℃的温度下在基板上气相沉积铁磁粒子起始材料来制造,原料气相沉积的量足以覆盖基板表面,厚度范围为0.5至 15nm,并且在基板上形成铁磁性粒子之后,在不超过室温的温度下在铁磁性粒子上气相沉积非磁性膜,该非磁性膜的厚度范围为1〜100nm,并且提供一对 电极各自位于非磁性膜上的预定位置。