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    • 1. 发明授权
    • Variable rectangle-type electron beam exposure apparatus and pattern exposure-formation method
    • 可变矩形电子束曝光装置和图案曝光形成方法
    • US07205557B2
    • 2007-04-17
    • US11319205
    • 2005-12-28
    • Masaaki MiyajimaYutaka NakamuraHiromi Hoshino
    • Masaaki MiyajimaYutaka NakamuraHiromi Hoshino
    • H01L21/27
    • H01J37/3174B82Y10/00B82Y40/00G21K1/08H01J2237/31776
    • A variable rectangle-type electron beam exposure apparatus for forming rectangular beams of different angles which is capable of highly finely conducting exposure with respect to a predetermined fine line pattern having an arbitrary angle in the pattern region. The apparatus includes a first slit member (10) in which a plurality of rectangular apertures (11, 12) are respectively arranged by different angles; a second slit member (20) in which a plurality of rectangular apertures (21, 22) which are respectively positioned in parallel with the corresponding rectangular apertures of the first slit member, are arranged; and a deflecting unit (40) for deflecting an electron beam, which has been transmitted through a plurality of apertures of the first slit member, so that, when the electron beam transmitted through the first aperture of the first slit member is transmitted through the corresponding first aperture of the second slit member, the electron beam transmitted through the apertures except for the first aperture of the first slit can be intercepted by the second slit member.
    • 一种用于形成不同角度的矩形光束的可变矩形电子束曝光装置,其能够相对于图案区域中具有任意角度的预定细纹图案进行高度细微的曝光。 该装置包括:第一狭缝构件(10),多个矩形孔(11,12)分别以不同的角度布置; 第二狭缝构件(20),其中分别与所述第一狭缝构件的相应矩形孔平行布置的多个矩形孔(21,22)布置; 以及偏转单元(40),用于偏转已经透过第一狭缝部件的多个孔的电子束,使得当透过第一狭缝部件的第一孔的电子束透过相应的 第二狭缝部件的第一开口部分,通过第一狭缝的第一开口部分以外的孔径透过的电子束可被第二狭缝部件截取。
    • 2. 发明申请
    • Variable rectangle-type electron beam exposure apparatus and pattern exposure-formation method
    • 可变矩形电子束曝光装置和图案曝光形成方法
    • US20060169925A1
    • 2006-08-03
    • US11319205
    • 2005-12-28
    • Masaaki MiyajimaYutaka NakamuraHiromi Hoshino
    • Masaaki MiyajimaYutaka NakamuraHiromi Hoshino
    • G21K5/10
    • H01J37/3174B82Y10/00B82Y40/00G21K1/08H01J2237/31776
    • A variable rectangle-type electron beam exposure apparatus for forming rectangular beams of different angles which is capable of highly finely conducting exposure with respect to a predetermined fine line pattern having an arbitrary angle in the pattern region. The apparatus includes a first slit member (10) in which a plurality of rectangular apertures (11, 12) are respectively arranged by different angles; a second slit member (20) in which a plurality of rectangular apertures (21, 22) which are respectively positioned in parallel with the corresponding rectangular apertures of the first slit member, are arranged; and a deflecting unit (40) for deflecting an electron beam, which has been transmitted through a plurality of apertures of the first slit member, so that, when the electron beam transmitted through the first aperture of the first slit member is transmitted through the corresponding first aperture of the second slit member, the electron beam transmitted through the apertures except for the first aperture of the first slit can be intercepted by the second slit member.
    • 一种用于形成不同角度的矩形光束的可变矩形电子束曝光装置,其能够相对于图案区域中具有任意角度的预定细纹图案进行高度细微的曝光。 该装置包括:第一狭缝构件(10),多个矩形孔(11,12)分别以不同的角度布置; 第二狭缝构件(20),其中分别与所述第一狭缝构件的相应矩形孔平行布置的多个矩形孔(21,22)布置; 以及偏转单元(40),用于偏转已经透过第一狭缝构件的多个孔的电子束,使得当透过第一狭缝构件的第一孔的电子束透过相应的 第二狭缝部件的第一开口部分,通过第一狭缝的第一开口部分以外的孔径透过的电子束可被第二狭缝部件截取。
    • 3. 发明申请
    • Variable rectangle-type electron beam exposure apparatus and pattern exposure-formation method
    • 可变矩形电子束曝光装置和图案曝光形成方法
    • US20060076513A1
    • 2006-04-13
    • US11055107
    • 2005-02-11
    • Yutaka NakamuraMasaaki MiyajimaHiromi Hoshino
    • Yutaka NakamuraMasaaki MiyajimaHiromi Hoshino
    • G21K5/10
    • H01J37/3174B82Y10/00B82Y40/00H01J2237/31776
    • A variable rectangle-type electron beam exposure apparatus for forming rectangular beams of different angles is provided which is capable of highly finely conducting exposure with respect to a predetermined fine line pattern having an arbitrary angle in the pattern region. The apparatus comprises: a first slit member (10) in which a plurality of rectangular apertures (11, 12) are respectively arranged by different angles; a second slit member (20) in which a plurality of rectangular apertures (21, 22) which are respectively positioned in parallel with the corresponding rectangular apertures of the first slit member, are arranged; and a deflecting unit (40) for deflecting an electron beam, which has been transmitted through a plurality of apertures of the first slit member, so that, when the electron beam transmitted through the first aperture of the first slit member is transmitted through the corresponding first aperture of the second slit member, the electron beam transmitted through the apertures except for the first aperture of the first slit can be intercepted by the second slit member.
    • 提供了用于形成不同角度的矩形束的可变矩形电子束曝光装置,其能够相对于图案区域中具有任意角度的预定细纹图案进行高度细微的曝光。 该装置包括:第一狭缝构件(10),多个矩形孔(11,12)分别以不同的角度布置; 第二狭缝构件(20),其中分别与所述第一狭缝构件的相应矩形孔平行布置的多个矩形孔(21,22)布置; 以及偏转单元(40),用于偏转已经透过第一狭缝部件的多个孔的电子束,使得当透过第一狭缝部件的第一孔的电子束透过相应的 第二狭缝部件的第一开口部分,通过第一狭缝的第一开口部分以外的孔径透过的电子束可被第二狭缝部件截取。
    • 8. 发明授权
    • Method and apparatus for generating exposure data
    • 用于产生曝光数据的方法和装置
    • US07269819B2
    • 2007-09-11
    • US10973270
    • 2004-10-27
    • Hiromi Hoshino
    • Hiromi Hoshino
    • G06F17/50G03C5/00
    • G03F1/68B82Y10/00B82Y40/00H01J37/3026H01J37/3174H01J2237/31761
    • An exposure data generation method for generating exposure data that can enhance exposure throughput by making the number of shots in each of unit areas where a plurality of charged particle beams are simultaneously applied equal. Layout data is extracted as a plurality of blocks for cell projection exposure. If the number of types of the plurality of blocks for cell projection exposure extracted is greater than a predetermined permissible number, a block for cell projection exposure that is the least effective in performing cell projection exposure is selected from among a plurality of blocks for cell projection exposure included in a unit area where the number of shots calculated is the smallest and the block for cell projection exposure is deleted from all of the unit areas. Variable rectangular exposure is performed for the block for cell projection exposure deleted. Therefore, the number of shots in each of the unit areas on a semiconductor substrate (or reticle) where the plurality of charged particle beams are simultaneously applied is made equal.
    • 一种用于产生曝光数据的曝光数据生成方法,该曝光数据生成方法能够通过使同时施加多个带电粒子束的每个单位区域中的拍摄次数相等来提高曝光量。 提取布局数据作为用于单元投影曝光的多个块。 如果提取的用于单元投影曝光的多个块的类型数量大于预定的允许数量,则在用于单元投影的多个块中选择在执行单元投影曝光中最不有效的用于单元投影曝光的块 包含在计算的拍摄张数最小的单位区域中的曝光,并且从所有单位区域中删除单元投影曝光的块。 对于用于单元投影曝光删除的块,执行可变矩形曝光。 因此,同时施加多个带电粒子束的半导体衬底(或掩模版)上的每个单位区域中的拍摄次数相等。
    • 10. 发明授权
    • Charged particle beam exposure method utilizing subfield proximity
corrections
    • 使用子场接近校正的带电粒子束曝光方法
    • US6087052A
    • 2000-07-11
    • US55990
    • 1998-04-07
    • Yasuo ManabeHiromi Hoshino
    • Yasuo ManabeHiromi Hoshino
    • G03F7/20H01J37/302G03F9/00
    • G03F7/2059H01J37/3026H01J2237/31769
    • The basis of the present invention is a charged particle beam exposure method comprising the steps of: (a) generating a plurality of areas within the sub-fields; (b) determining the pattern density within each of the areas, and correcting the pattern density in accordance with the pattern density of areas surrounding the area and the distance between areas; (c) generating a supplementary exposure pattern in the area when the corrected pattern density for the area is lower than a prescribed reference exposure density; and (d) exposing the material in accordance with exposure data comprising the supplementary exposure pattern data appended to the pattern data. A first invention comprises a step for further generating a supplementary exposure pattern in areas lying between pattern existing regions where the patterns are located, and having a pattern density higher than the reference exposure density, when the distance between the pattern existing regions is greater than a prescribed reference distance.
    • 本发明的基础是带电粒子束曝光方法,包括以下步骤:(a)在子场内产生多个区域; (b)确定每个区域内的图案密度,并且根据区域周围的区域的图案密度和区域之间的距离来校正图案密度; (c)当所述区域的校正图案密度低于规定的参考曝光浓度时,在所述区域中产生补充曝光图案; 和(d)根据包括附加到图案数据的补充曝光图案数据的曝光数据曝光该材料。 第一发明包括在图案存在区域之间的距离大于图形存在区域时,在图案存在区域之间的区域中进一步产生补充曝光图案并具有高于基准曝光浓度的图案密度的步骤 规定参考距离。