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1. 发明授权

US5910342A Process for forming deposition film 失效
标题翻译：沉积膜成膜工艺
公开(公告)号：US5910342A
公开(公告)日：1999-06-08
申请号：US469676
申请日：1995-06-06
申请人： Masaaki Hirooka , Kyosuke Ogawa , Shunichi Ishihara , Isamu Shimizu
发明人： Masaaki Hirooka , Kyosuke Ogawa , Shunichi Ishihara , Isamu Shimizu
IPC分类号： C23C16/24 , C23C16/448 , C23C16/452 , G03G5/082 , H01L21/205 , H01L31/20 , B06D3/06 , C23C16/00
CPC分类号： H01L21/0245 , C23C16/24 , C23C16/448 , C23C16/452 , G03G5/08278 , H01L21/02425 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： A process for forming a deposition film on a substrate comprises introducing separately a precursor or activated species formed in a decomposition space (B) and activated species formed in a decomposition space (C), into the deposition space wherein the film is formed on the substrate.
摘要翻译：用于在基板上形成沉积膜的方法包括将分解空间（B）中形成的前体或活化物质和形成在分解空间（C）中的活化物质分别引入沉积空间中，其中膜形成在基底上。

2. 发明授权

US5645947A Silicon-containing deposited film 失效
标题翻译：含硅沉积膜
公开(公告)号：US5645947A
公开(公告)日：1997-07-08
申请号：US477269
申请日：1995-06-07
申请人： Masaaki Hirooka , Kyosuke Ogawa , Shunichi Ishihara , Isamu Shimizu
发明人： Masaaki Hirooka , Kyosuke Ogawa , Shunichi Ishihara , Isamu Shimizu
IPC分类号： C23C16/24 , C23C16/448 , C23C16/452 , G03G5/082 , H01L21/205 , H01L31/20 , B32B9/00 , G03G5/04
CPC分类号： H01L21/0245 , C23C16/24 , C23C16/448 , C23C16/452 , G03G5/08278 , H01L21/02425 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： A deposition film is formed on a substrate in a deposition space (A) by the chemical reaction between a gaseous precursor of a higher silicon halide or a higher halosilane formed in a decomposition space (B) and a separately-introduced gaseous, activated species of hydrogen, silane or a halosilane formed in a decomposition space (C).
摘要翻译：通过在分解空间（B）中形成的高级卤化硅或高级卤代硅烷的气体前体与单独导入的气态活化物质（A）中的化学反应在沉积空间（A）中的基底上形成沉积膜氢，硅烷或在分解空间（C）中形成的卤代硅烷。

3. 发明授权

US4835005A Process for forming deposition film 失效
标题翻译：沉积膜成膜工艺
公开(公告)号：US4835005A
公开(公告)日：1989-05-30
申请号：US161386
申请日：1988-02-22
申请人： Masaaki Hirooka , Kyosuke Ogawa , Shunichi Ishihara , Isamu Shimizu
发明人： Masaaki Hirooka , Kyosuke Ogawa , Shunichi Ishihara , Isamu Shimizu
IPC分类号： C23C16/24 , C23C16/448 , C23C16/452 , G03G5/082 , H01L21/205 , H01L31/20
CPC分类号： H01L21/0245 , C23C16/24 , C23C16/448 , C23C16/452 , G03G5/08278 , H01L21/02425 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： A process for forming a deposition film on a substrate comprises introducing separately a precursor or activated species formed in a decomposition space (B) and activated species formed in a decomposition space (C), into the deposition space wherein the film is formed on the substrate.
摘要翻译：用于在基板上形成沉积膜的方法包括将分解空间（B）中形成的前体或活化物质和形成在分解空间（C）中的活化物质分别引入沉积空间中，其中膜形成在基底上。

4. 发明授权

US5470389A Apparatus for forming deposited film 失效
标题翻译：用于形成沉积膜的装置
公开(公告)号：US5470389A
公开(公告)日：1995-11-28
申请号：US212930
申请日：1994-03-15
申请人： Shunichi Ishihara , Junichi Hanna , Isamu Shimizu , Masaaki Hirooka
发明人： Shunichi Ishihara , Junichi Hanna , Isamu Shimizu , Masaaki Hirooka
IPC分类号： C23C16/452 , C23C16/00
CPC分类号： C23C16/452
摘要： An apparatus for forming a deposited film by introducing two or more kinds of gaseous starting materials for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting materials into a reaction space to effect chemical contact therebetween to thereby form a plural number of precursors including precursors under excited state, and forming a deposited film in a plurality of layers with different compositions on a substrate existing in a film forming space spatially communicated with said reaction space with the use of at least one precursor of the precursors as the feeding source for the constituent element of the deposited film, said apparatus comprising a plural number of gas introducing means of a multiple tubular structure for discharging into said reaction space said gaseous starting materials and said gaseous halogenic oxidizing agent through the discharging outlets, respectively, and permitting them to react with each other to form the precursors and means for preventing contact of precursors unnecessary for the desired film formation of the precursors with the substrate.
摘要翻译：一种用于通过将用于形成沉积膜的两种或更多种气态起始材料和具有用于所述原料的氧化作用的气态卤素氧化剂引入反应空间以在其间进行化学接触而形成沉积膜的装置，由此形成多个前体，其包括在激发态下的前体，并且在存在于与所述反应空间空间连通的成膜空间中的基底上形成具有不同组成的多个层的沉积膜，其中使用至少一种前体前体作为沉积膜的构成元素的进料源，所述装置包括多个多管状结构的气体引入装置，用于通过排出口将所述气态原料和所述气态卤素氧化剂排放到所述反应空间中，并允许他们作出反应彼此形成前体和用于防止前体与基质的所需膜形成所必需的前体接触的装置。

5. 发明授权

US4824697A Method for forming a multi-layer deposited film 失效
标题翻译：形成多层沉积膜的方法
公开(公告)号：US4824697A
公开(公告)日：1989-04-25
申请号：US2217
申请日：1987-01-12
申请人： Shunichi Ishihara , Masaaki Hirooka , Junichi Hanna , Isamu Shimizu
发明人： Shunichi Ishihara , Masaaki Hirooka , Junichi Hanna , Isamu Shimizu
IPC分类号： H01L31/04 , C23C16/02 , C23C16/452 , H01L21/205 , C23C16/22
CPC分类号： C23C16/02 , C23C16/452
摘要： A method for forming a deposited film by introducing the active species (A) formed by decomposition of a subjective starting material gas (A) which is the major flow rate component and the active species (B) formed by decomposition of an objective starting material gas (B) which is the minor flow rate component and the activated species (C) formed from a compound (C) separately from each other into a film forming space for formation of a deposited film on a substrate and permitting said active species (A) and active species (B) to chemically react with said activated species (C) to thereby form a deposited film on the substrate comprises forming a multi-layer structure film by varying the amount of said active species (B) introduced into the film forming space.
摘要翻译：通过引入由主要原料气体（A）分解形成的活性物质（A）形成沉积膜的方法，所述主要原料气体（A）是通过目标原料气体分解形成的主流量分量和活性种类（B）（C），由化合物（C）形成的活性物质（C）彼此分离成用于在基材上形成沉积膜的成膜空间，并允许所述活性物质（A）和活性物质（B）与所述活化物质（C）进行化学反应，从而在基材上形成沉积膜包括通过改变导入成膜空间的所述活性物质（B）的量来形成多层结构膜。

6. 发明授权

US5322568A Apparatus for forming deposited film 失效
标题翻译：用于形成沉积膜的装置
公开(公告)号：US5322568A
公开(公告)日：1994-06-21
申请号：US999548
申请日：1992-12-31
申请人： Shunichi Ishihara , Jun-ichi Hanna , Isamu Shimizu , Masaaki Hirooka
发明人： Shunichi Ishihara , Jun-ichi Hanna , Isamu Shimizu , Masaaki Hirooka
IPC分类号： C23C16/452 , C23C16/00
CPC分类号： C23C16/452
摘要： An apparatus for forming a deposited film by introducing two or more kinds of gaseous starting materials for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting materials into a reaction space to effect chemical contact therebetween to thereby form a plural number of precursors including precursors under excited state, and forming a deposited film in a plurality of layers with different compositions on a substrate existing in a film forming space spatially communicated with said reaction space with the use of at least one precursor of the precursors as the feeding source for the constituent element of the deposited film, said apparatus comprising a plural number of gas introducing means of a multiple tubular structure for discharging into said reaction space said gaseous starting materials and said gaseous halogenic oxidizing agent through the discharging outlets, respectively, and permitting them to react with each other to form the precursors and means for preventing contact of precursors unnecessary for the desired film formation of the precursors with the substrate.
摘要翻译：一种用于通过将用于形成沉积膜的两种或更多种气态起始材料和具有用于所述原料的氧化作用的气态卤素氧化剂引入反应空间以在其间进行化学接触而形成沉积膜的装置，由此形成多个前体，其包括在激发态下的前体，并且在存在于与所述反应空间空间连通的成膜空间中的基底上形成具有不同组成的多个层的沉积膜，其中使用至少一种前体前体作为沉积膜的构成元素的进料源，所述装置包括多个多管状结构的气体引入装置，用于通过排出口将所述气态原料和所述气态卤素氧化剂排放到所述反应空间中，并允许他们作出反应彼此形成前体和用于防止前体与基质的所需膜形成所必需的前体接触的装置。

7. 发明授权

US4855210A Electrophotographic photosensitive member, process and apparatus for the preparation thereof 失效
标题翻译：电子照相感光构件，其制备方法和装置
公开(公告)号：US4855210A
公开(公告)日：1989-08-08
申请号：US940499
申请日：1986-12-10
申请人： Masaaki Hirooka , Shunichi Ishihara , Junichi Hanna , Isamu Shimizu
发明人： Masaaki Hirooka , Shunichi Ishihara , Junichi Hanna , Isamu Shimizu
IPC分类号： G03G5/08 , C23C16/24 , C23C16/30 , G03G5/082
CPC分类号： G03G5/08278
摘要： An improved electrophotographic photosensitive member having a desired light receiving layer prepared by the use of a substance capable of contributing to form a deposited film and an electronically oxidizing agent in the absence of a plasma. A process and an apparatus for preparing the electrophotographic photosensitive member.
摘要翻译：一种改进的电子照相感光构件，其具有通过使用能够有助于形成沉积膜的物质和不存在等离子体的电子氧化剂制备的所需光接收层。一种用于制备电子照相感光构件的方法和装置。

8. 发明授权

US4798166A Apparatus for continuously preparing a light receiving element for use in photoelectromotive force member or image-reading photosensor 失效
标题翻译：用于连续制备用于光电动势部件或图像读取光电传感器的光接收元件的装置
公开(公告)号：US4798166A
公开(公告)日：1989-01-17
申请号：US943756
申请日：1986-12-19
申请人： Masaaki Hirooka , Shunichi Ishihara , Junichi Hanna , Isamu Shimizu
发明人： Masaaki Hirooka , Shunichi Ishihara , Junichi Hanna , Isamu Shimizu
IPC分类号： C23C16/54 , H01L31/062 , H01L31/075 , H01L31/09 , H01L31/20 , C23C16/00
CPC分类号： C23C16/54 , H01L31/062 , H01L31/075 , H01L31/095 , H01L31/202 , H01L31/206 , Y02E10/548 , Y02P70/521
摘要： There is provided an apparatus for continuously preparing an improved light receiving element for photoelectromotive force member or image-reading photosensor comprising the plural number of continuously connected reaction chambers through opening and shutting gates for forming respective constituent layers for said light receiving element and a substrate conveying belt moving through the reaction chambers, each of the reaction chambers having a film forming space, a gas supplying means being extended into the film forming space through the upper wall of the reaction chamber, an exhausting means being disposed at the bottom portion of the reaction chamber and the substrate conveying and supporting means being positioned in the reaction chamber, the said gas supplying means having (a) a conduit for transporting (i) a gaseous substance capable of contributing to form a deposited film and (b) a conduit for transporting (ii) a gaseous oxidizing agent being so disposed that the gaseous substance (i) and the oxidizing agent (ii) may be introduced into the space positioned above the surface of the substrate and they may be contacted each other in the absence of a plasma to thereby to generate plural kinds of precursors containing excited precursors and let at least one kind of those precursors directed to form a deposited film on the substrate on the substrate conveying belt.
摘要翻译：提供了一种用于连续地制备用于光电动势部件的改进的光接收元件或图像读取光电传感器的装置，其包括通过用于形成用于所述光接收元件的各个构成层的开闭闸门的多个连续连接的反应室和基板输送皮带移动通过反应室，每个反应室具有成膜空间，气体供应装置通过反应室的上壁延伸到成膜空间中，排气装置设置在反应的底部并且基板输送和支撑装置位于反应室中，所述气体供应装置具有（a）用于输送（i）能够有助于形成沉积膜的气态物质的导管，以及（b）用于输送（ii）如此设置的气态氧化剂使得气态废物可以将（i）和氧化剂（ii）引入位于衬底表面上方的空间中，并且它们可以在不存在等离子体的情况下彼此接触，从而产生含有被激发的前体的多种前体，并使至少一种这样的前驱体，用于在基板输送带上的基板上形成沉积膜。

9. 发明授权

US4751192A Process for the preparation of image-reading photosensor 失效
标题翻译：制作图像阅读光电传感器的过程
公开(公告)号：US4751192A
公开(公告)日：1988-06-14
申请号：US938997
申请日：1986-12-08
申请人： Masaaki Hirooka , Shunichi Ishihara , Junichi Hanna , Isamu Shimizu
发明人： Masaaki Hirooka , Shunichi Ishihara , Junichi Hanna , Isamu Shimizu
IPC分类号： H01L27/146 , G01J1/02 , H01L31/0248 , H01L31/0392 , H01L31/09 , H01L31/20 , H01L31/18
CPC分类号： H01L31/202 , H01L31/03921 , H01L31/095 , Y02E10/50 , Y02P70/521
摘要： An improved image-reading photosensor having a desired photoelectric conversion layer prepared in the absence of a plasma by the reaction of a substance capable of contributing to form a deposited film and an electronically oxidizing agent. A process and an apparatus for preparing the improved image-reading photosensor.
摘要翻译：一种改进的图像读取光电传感器，其具有通过能够有助于形成沉积膜的物质和电子氧化剂的反应而在不存在等离子体的情况下制备的所需光电转换层。一种用于制备改进的图像读取光电传感器的方法和装置。

10. 发明授权

US4885258A Method for making a thin film transistor using a concentric inlet feeding system 失效
标题翻译：使用同心入口进料系统制造薄膜晶体管的方法
公开(公告)号：US4885258A
公开(公告)日：1989-12-05
申请号：US267701
申请日：1988-11-01
申请人： Shunichi Ishihara , Hirokazu Ootoshi , Masaaki Hirooka , Junichi Hanna , Isamu Shimizu
发明人： Shunichi Ishihara , Hirokazu Ootoshi , Masaaki Hirooka , Junichi Hanna , Isamu Shimizu
IPC分类号： H01L27/12 , H01L21/205 , H01L21/336 , H01L29/78 , H01L29/786
CPC分类号： H01L21/02381 , H01L21/02422 , H01L21/02425 , H01L21/02433 , H01L21/0245 , H01L21/02532 , H01L21/0262 , Y10S148/057 , Y10S148/169 , Y10S438/909
摘要： There is provided an improved thin-film transistor of which a principal semiconducting layer comprises a layer composed of an amorphous material prepared by (a) introducing (i) a gaseous substance containing atoms capable of becoming constituents for said layer into a film forming chamber having a substrate for thin-film transistor through a transporting conduit for the gaseous substance and (ii) a gaseous halogen series substance having a property to oxidize the gaseous substance into the film forming chamber through a transporting conduit for the gaseous halogen series oxidizing agent, (b) chemically reacting the gaseous substance and the gaseous halogen series agent in the film forming chamber in the absence of a plasma to generate plural kinds of precursors containing exited precursors and (c) forming said layer on the substrate with utilizing at least one kind of those precursors as a supplier.
摘要翻译：提供了一种改进的薄膜晶体管，其主要半导体层包括由非晶材料构成的层，其通过以下步骤制备：（a）将含有能够成为所述层的成分的原子的气态物质引入到具有通过用于气态物质的输送导管的薄膜晶体管的基板和（ii）具有通过气态卤素系列氧化剂的输送管道将气态物质氧化成成膜室的性质的气态卤素系列物质（ b）在不存在等离子体的情况下使成膜室中的气态物质和气态卤素系列试剂化学反应，生成多种含有前体前体的前体，和（c）使用至少一种这些前体作为供应商。

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