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1. 发明申请

WO2013063212A1 SYSTEMS AND METHODS FOR PERFORMING MULTI-MODAL POWER AMPLIFICATION 审中-公开
标题翻译：用于执行多模式功率放大的系统和方法
公开(公告)号：WO2013063212A1
公开(公告)日：2013-05-02
申请号：PCT/US2012/061831
申请日：2012-10-25
申请人： MARVELL WORLD TRADE LTD. , SIGNOFF, David, M. , LIAO, Shu-hsien , HE, Ming , LOEB, Wayne, A.
发明人： SIGNOFF, David, M. , LIAO, Shu-hsien , HE, Ming , LOEB, Wayne, A.
IPC分类号： H03F1/02 , H03F1/22 , H03F1/56 , H03F3/72
CPC分类号： H03F1/56 , H03F1/0277 , H03F1/22 , H03F3/72
摘要： In accordance with an embodiment of the disclosure, systems and methods are provided for multi-modal power amplification. In certain implementations, an adjustable power amplifier amplifies an input signal, and the amount of amplification is varied based on the input signal. A variable impedance unit receives an amplified input signal, and the amount of load impedance at the variable impedance unit is varied based on the input signal.
摘要翻译：根据本公开的实施例，提供了用于多模式功率放大的系统和方法。在某些实施方案中，可调功率放大器放大输入信号，并且放大量基于输入信号而变化。可变阻抗单元接收放大的输入信号，并且可变阻抗单元处的负载阻抗量基于输入信号而变化。

2. 发明申请

WO2015066704A1 MEMORY EFFECT REDUCTION USING LOW IMPEDANCE BIASING 审中-公开
标题翻译：使用低阻抗偏移的存储器效应减少
公开(公告)号：WO2015066704A1
公开(公告)日：2015-05-07
申请号：PCT/US2014/063912
申请日：2014-11-04
申请人： MARVELL WORLD TRADE, LTD.
发明人： SIGNOFF, David, M. , HE, Ming , LOEB, Wayne, A.
IPC分类号： H03F1/32 , H03F1/30
CPC分类号： H03F3/245 , G05F1/46 , H03F1/301 , H03F1/308 , H03F3/195 , H03F3/265 , H03F3/505 , H03F2200/24 , H03F2200/451 , H03F2200/453 , H03F2200/534 , H03F2200/555 , H03F2200/69 , H03H7/0107
摘要： A circuit includes a bias circuit for a biased transistor. The bias circuit includes a master-slave source follower circuit, a reference transistor, and a bias circuit voltage output coupled to the biased transistor and configured to provide a bias voltage. The reference transistor has a transconductance substantially identical to a transconductance of the biased transistor. A signal ground circuit may be coupled between the biased transistor and one or more components of the bias circuit that do not generate significant return currents to a power supply ground. A method includes generating a current in a reference transistor according to a first voltage generated using a master source follower circuit, generating a second voltage substantially identical to the first voltage using a slave source follower circuit, and providing the second voltage to a biased transistor. The reference transistor has a transconductance substantially identical to a transconductance of the biased transistor.
摘要翻译：电路包括用于偏置晶体管的偏置电路。偏置电路包括主从源极跟随器电路，参考晶体管和耦合到偏置晶体管并被配置为提供偏置电压的偏置电路电压输出。参考晶体管具有与偏置晶体管的跨导基本相同的跨导。信号接地电路可以耦合在偏置晶体管和偏置电路的一个或多个组件之间，其不产生到电源接地的大的返回电流。一种方法包括根据使用主源跟随器电路产生的第一电压产生参考晶体管中的电流，使用从源跟随器电路产生与第一电压基本相同的第二电压，以及将第二电压提供给偏置晶体管。参考晶体管具有与偏置晶体管的跨导基本相同的跨导。

3. 发明申请

WO2012082445A1 CANCELATION OF GAIN CHANGE DUE TO AMPLIFIER SELF-HEATING 审中-公开
标题翻译：取消放大器自动加热后的增益变化
公开(公告)号：WO2012082445A1
公开(公告)日：2012-06-21
申请号：PCT/US2011/063353
申请日：2011-12-06
申请人： MARVELL WORLD TRADE LTD. , SIGNOFF, David, M. , LOEB, Wayne, A. , HE, Ming
发明人： SIGNOFF, David, M. , LOEB, Wayne, A. , HE, Ming
IPC分类号： H03F1/30 , H03G3/30
CPC分类号： H03F1/30 , H03F2200/447 , H03F2200/468 , H03G3/3042
摘要： A system includes a power amplifier, a preamplifier, a first temperature sensor, and a bias generator. The power amplifier has a first gain, which is a function of a temperature of the power amplifier. The preamplifier has a second gain, amplifies an input signal, and outputs an amplified signal to the power amplifier. The first temperature sensor senses the temperature and generates a first signal. The bias generator generates a first biasing signal to bias the power amplifier, generates a second biasing signal to bias the preamplifier, and adjusts the second gain by adjusting the second biasing signal based on the first signal. The adjusted second gain compensates a change in the first gain due to the change in the temperature.
摘要翻译：一种系统包括功率放大器，前置放大器，第一温度传感器和偏置发生器。功率放大器具有第一增益，其是功率放大器的温度的函数。前置放大器具有第二增益，放大输入信号，并将放大的信号输出到功率放大器。第一温度传感器感测温度并产生第一信号。偏置发生器产生第一偏置信号以偏置功率放大器，产生第二偏置信号以偏置前置放大器，并且通过基于第一信号调整第二偏置信号来调整第二增益。调整后的第二增益补偿了由于温度变化引起的第一增益的变化。

4. 发明申请

WO2011062821A1 GROUND SHIELD CAPACITOR 审中-公开
标题翻译：接地电容器
公开(公告)号：WO2011062821A1
公开(公告)日：2011-05-26
申请号：PCT/US2010/056153
申请日：2010-11-10
申请人： MARVELL WORLD TRADE LTD , SIGNOFF, David, M. , LOEB, Wayne, A.
发明人： SIGNOFF, David, M. , LOEB, Wayne, A.
IPC分类号： H01G4/232
CPC分类号： H01G4/228 , H01G4/002
摘要： In one embodiment, an apparatus includes a first reference voltage coupled to a first metal layer and a second reference voltage coupled to a second metal layer. A first finger type in the plurality of fingers is coupled to the first metal layer at a first area and coupled to the first metal layer and the second metal layer at a second area. A second finger type in the plurality of fingers is coupled to the second metal layer at the first area and coupled to the first metal layer and the second metal layer at the second area. Also, the first finger type and the second finger type alternately positioned next to each other.
摘要翻译：在一个实施例中，装置包括耦合到第一金属层的第一参考电压和耦合到第二金属层的第二参考电压。多个指状物中的第一手指类型在第一区域处耦合到第一金属层，并且在第二区域处耦合到第一金属层和第二金属层。多个指状物中的第二手指类型在第一区域处耦合到第二金属层，并且在第二区域处耦合到第一金属层和第二金属层。此外，第一手指型和第二手指型彼此交替地定位。

5. 发明公开

EP3066753A1 MEMORY EFFECT REDUCTION USING LOW IMPEDANCE BIASING 审中-公开
标题翻译：偏倚低阻抗记忆效应还原
公开(公告)号：EP3066753A1
公开(公告)日：2016-09-14
申请号：EP14857354.6
申请日：2014-11-04
申请人： Marvell World Trade Ltd.
发明人： SIGNOFF, David, M. , HE, Ming , LOEB, Wayne, A.
IPC分类号： H03F1/32 , H03F1/30
CPC分类号： H03F3/245 , G05F1/46 , H03F1/301 , H03F1/308 , H03F3/195 , H03F3/265 , H03F3/505 , H03F2200/24 , H03F2200/451 , H03F2200/453 , H03F2200/534 , H03F2200/555 , H03F2200/69 , H03H7/0107
摘要： A circuit includes a bias circuit for a biased transistor. The bias circuit includes a master-slave source follower circuit, a reference transistor, and a bias circuit voltage output coupled to the biased transistor and configured to provide a bias voltage. The reference transistor has a transconductance substantially identical to a transconductance of the biased transistor. A signal ground circuit may be coupled between the biased transistor and one or more components of the bias circuit that do not generate significant return currents to a power supply ground. A method includes generating a current in a reference transistor according to a first voltage generated using a master source follower circuit, generating a second voltage substantially identical to the first voltage using a slave source follower circuit, and providing the second voltage to a biased transistor. The reference transistor has a transconductance substantially identical to a transconductance of the biased transistor.

6. 发明公开

EP2652870A1 CANCELATION OF GAIN CHANGE DUE TO AMPLIFIER SELF-HEATING 审中-公开
标题翻译： VESTÄRKUNGSÄNDERUNGEN所致拆迁放大器自热
公开(公告)号：EP2652870A1
公开(公告)日：2013-10-23
申请号：EP11802585.7
申请日：2011-12-06
申请人： Marvell World Trade Ltd.
发明人： SIGNOFF, David, M. , LOEB, Wayne, A. , HE, Ming
IPC分类号： H03F1/30 , H03G3/30
CPC分类号： H03F1/30 , H03F2200/447 , H03F2200/468 , H03G3/3042
摘要： A system includes a power amplifier, a preamplifier, a first temperature sensor, and a bias generator. The power amplifier has a first gain, which is a function of a temperature of the power amplifier. The preamplifier has a second gain, amplifies an input signal, and outputs an amplified signal to the power amplifier. The first temperature sensor senses the temperature and generates a first signal. The bias generator generates a first biasing signal to bias the power amplifier, generates a second biasing signal to bias the preamplifier, and adjusts the second gain by adjusting the second biasing signal based on the first signal. The adjusted second gain compensates a change in the first gain due to the change in the temperature.

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