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1. 发明申请

US20090321757A1 Dislocation-based light emitter 有权
标题翻译：基于位错的光发射器
公开(公告)号：US20090321757A1
公开(公告)日：2009-12-31
申请号：US11919915
申请日：2006-05-03
申请人： Martin Kittler , Manfred Reiche , Tzanimir Arguirov , Winfried Seifert
发明人： Martin Kittler , Manfred Reiche , Tzanimir Arguirov , Winfried Seifert
IPC分类号： H01L33/00
CPC分类号： H01L33/34 , H01L33/16 , H01S5/3224 , H01S5/3227
摘要： A light-emitting semiconductor component comprising a substrate which has a first interface between a first and a second silicon layer, whose lattice structures which are considered as ideal are rotated relative to each other through a twist angle about a first axis perpendicular to the substrate surface and are tilted through a tilt angle about a second axis parallel to the substrate surface, in such a way that a dislocation network is present in the region of the interface, wherein the twist angle and the tilt angle are so selected that an electroluminescence spectrum of the semiconductor component has an absolute maximum of the emitted light intensity at either 1.3 micrometers light wavelength or 1.55 micrometers light wavelength.
摘要翻译：一种发光半导体部件，其特征在于，具有基板，该基板具有第一和第二硅层之间的第一界面，所述第一和第二硅层的晶格结构被认为是理想的，通过围绕垂直于所述基板表面的第一轴线的扭转角度相对于彼此旋转并且以平行于衬底表面的第二轴线的倾斜角倾斜，使得在界面区域中存在位错网络，其中扭转角和倾斜角被选择为使得电致发光光谱半导体元件具有在1.3微米光波长或1.55微米光波长处的发射光强度的绝对最大值。

2. 发明授权

US07880189B2 Dislocation-based light emitter 有权
标题翻译：基于位错的光发射器
公开(公告)号：US07880189B2
公开(公告)日：2011-02-01
申请号：US11919915
申请日：2006-05-03
申请人： Martin Kittler , Manfred Reiche , Tzanimir Arguirov , Winfried Seifert
发明人： Martin Kittler , Manfred Reiche , Tzanimir Arguirov , Winfried Seifert
IPC分类号： H01L33/00
CPC分类号： H01L33/34 , H01L33/16 , H01S5/3224 , H01S5/3227
摘要： A light-emitting semiconductor component comprising a substrate which has a first interface between a first and a second silicon layer, whose lattice structures which are considered as ideal are rotated relative to each other through a twist angle about a first axis perpendicular to the substrate surface and are tilted through a tilt angle about a second axis parallel to the substrate surface, in such a way that a dislocation network is present in the region of the interface, wherein the twist angle and the tilt angle are so selected that an electroluminescence spectrum of the semiconductor component has an absolute maximum of the emitted light intensity at either 1.3 micrometers light wavelength or 1.55 micrometers light wavelength.
摘要翻译：一种发光半导体部件，包括基板，该基板在第一和第二硅层之间具有被认为是理想的晶格结构的第一界面，通过围绕垂直于基板表面的第一轴线的扭转角相对于彼此旋转并且以平行于衬底表面的第二轴线的倾斜角倾斜，使得在界面区域中存在位错网络，其中扭转角和倾斜角被选择为使得电致发光光谱半导体元件具有在1.3微米光波长或1.55微米光波长处的发射光强度的绝对最大值。

3. 发明申请

US20120031450A1 THERMOELECTRIC SEMICONDUCTOR COMPONENT 有权
标题翻译：热电半导体元件
公开(公告)号：US20120031450A1
公开(公告)日：2012-02-09
申请号：US13138199
申请日：2010-01-12
申请人： Martin Kittler , Manfred Reiche
发明人： Martin Kittler , Manfred Reiche
IPC分类号： H01L35/28 , H05K7/20 , H01L29/66
CPC分类号： H01L35/12 , H01L27/16 , H01L35/32
摘要： A thermoelectric semiconductor component, comprising an electrically insulating substrate surface and a plurality of spaced-apart, alternating p-type (4) and n-type semiconductor structural elements (5) which are disposed on said surface and which are connected to each other in series in an electrically conductive manner alternatingly at two opposite ends of the respective semiconductor structural elements by conductive structures, in such a way that a temperature difference (2ΔT) between the opposite ends produces an electrical voltage between the conductive structures or that a voltage difference between the conductive structures (7, 9; 13, 15) produces a temperature difference (2ΔT) between the opposite ends, characterized in that the semiconductor structural elements have a first boundary surface between a first and a second silicon layer, the lattice structures of which are considered ideal and are rotated by an angle of rotation relative to each other about a first axis perpendicular to the substrate surface and tilted by a tilt angle about a second axis lying parallel to the substrate surface, in such a way that a dislocation network is present in the region of the boundary surface.
摘要翻译：一种热电半导体部件，包括电绝缘基板表面和多个间隔开的交替的p型（4）和n型半导体结构元件（5），它们设置在所述表面上并彼此连接通过导电结构在相应的半导体结构元件的两个相对端处交替地以导电方式串联，使得相对端之间的温差（2＆Dgr; T）在导电结构之间产生电压，或者电压导电结构（7,9; 13,15）之间的差异在相对端之间产生温度差（2＆Dgr; T），其特征在于半导体结构元件具有第一和第二硅层之间的第一边界面，它们的晶格结构被认为是理想的并且围绕第一轴线p相对于彼此旋转旋转角度垂直于衬底表面并且以平行于衬底表面的第二轴线的倾斜角度倾斜，使得位错网络存在于边界表面的区域中。

4. 发明授权

US08809667B2 Thermoelectric semiconductor component 有权
标题翻译：热电半导体元件
公开(公告)号：US08809667B2
公开(公告)日：2014-08-19
申请号：US13138199
申请日：2010-01-12
申请人： Martin Kittler , Manfred Reiche
发明人： Martin Kittler , Manfred Reiche
IPC分类号： H01L35/12 , H01L27/16
CPC分类号： H01L35/12 , H01L27/16 , H01L35/32
摘要： A thermoelectric semiconductor component, comprising an electrically insulating substrate surface and a plurality of spaced-apart, alternating p-type (4) and n-type semiconductor structural elements (5) which are disposed on said surface and which are connected to each other in series in an electrically conductive manner alternatingly at two opposite ends of the respective semiconductor structural elements by conductive structures, in such a way that a temperature difference (2ΔT) between the opposite ends produces an electrical voltage between the conductive structures or that a voltage difference between the conductive structures (7, 9; 13, 15) produces a temperature difference (2ΔT) between the opposite ends, characterized in that the semiconductor structural elements have a first boundary surface between a first and a second silicon layer, the lattice structures of which are considered ideal and are rotated by an angle of rotation relative to each other about a first axis perpendicular to the substrate surface and tilted by a tilt angle about a second axis lying parallel to the substrate surface, in such a way that a dislocation network is present in the region of the boundary surface.
摘要翻译：一种热电半导体部件，包括电绝缘基板表面和多个间隔开的交替的p型（4）和n型半导体结构元件（5），它们设置在所述表面上并彼此连接通过导电结构在相应的半导体结构元件的两个相对端处交替地以导电方式串联，使得相对端之间的温差（2＆Dgr; T）在导电结构之间产生电压，或者电压导电结构（7,9; 13,15）之间的差异在相对端之间产生温度差（2＆Dgr; T），其特征在于半导体结构元件具有第一和第二硅层之间的第一边界面，它们的晶格结构被认为是理想的并且围绕第一轴线p相对于彼此旋转旋转角度垂直于衬底表面并且以平行于衬底表面的第二轴线的倾斜角度倾斜，使得位错网络存在于边界表面的区域中。

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