专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08536065B2 Ultra high selectivity doped amorphous carbon strippable hardmask development and integration 有权
标题翻译：超高选择性掺杂无定形碳可剥离硬掩模开发和集成
公开(公告)号：US08536065B2
公开(公告)日：2013-09-17
申请号：US13249794
申请日：2011-09-30
申请人： Martin Jay Seamons , Sudha Rathi , Kwangduk Douglas Lee , Deenesh Padhi , Bok Hoen Kim , Chiu Chan
发明人： Martin Jay Seamons , Sudha Rathi , Kwangduk Douglas Lee , Deenesh Padhi , Bok Hoen Kim , Chiu Chan
IPC分类号： H01L21/469
CPC分类号： H01L21/64 , C23C16/0272 , C23C16/26 , H01L21/02115 , H01L21/02274 , H01L21/31144
摘要： Embodiments of the present invention generally relate to the fabrication of integrated circuits and particularly to the deposition of a boron containing amorphous carbon layer on a semiconductor substrate. In one embodiment, a method of processing a substrate in a processing chamber is provided. The method comprises providing a substrate in a processing volume, flowing a hydrocarbon containing gas mixture into the processing volume, generating a plasma of the hydrocarbon containing gas mixture by applying power from an RF source, flowing a boron containing gas mixture into the processing volume, and depositing a boron containing amorphous carbon film on the substrate in the presence of the plasma, wherein the boron containing amorphous carbon film contains from about 30 to about 60 atomic percentage of boron.
摘要翻译：本发明的实施例一般涉及集成电路的制造，特别涉及在半导体衬底上沉积含硼无定形碳层。在一个实施例中，提供了一种在处理室中处理衬底的方法。该方法包括在处理体积中提供衬底，使含烃气体混合物流入处理体积，通过从含有硼的气体混合物流入处理体积的RF源施加功率产生含烃气体混合物的等离子体，以及在所述等离子体存在下在所述衬底上沉积含硼无定形碳膜，其中所述含硼无定形碳膜含有约30至约60原子百分比的硼。

2. 发明申请

US20110104400A1 METHOD FOR DEPOSITING AN AMORPHOUS CARBON FILM WITH IMPROVED DENSITY AND STEP COVERAGE 审中-公开
标题翻译：用改进的密度和步骤覆盖沉积非晶碳膜的方法
公开(公告)号：US20110104400A1
公开(公告)日：2011-05-05
申请号：US12987688
申请日：2011-01-10
申请人： Deenesh Padhi , Hyoung-Chan Ha , Sudha Rathi , Derek R. Witty , Chiu Chan , Sohyun Park , Ganesh Balasubramanian , Karthik Janakiraman , Martin Jay Seamons , Visweswaren Sivaramakrishnan , Bok Hoen Kim , Hichem M'Saad
发明人： Deenesh Padhi , Hyoung-Chan Ha , Sudha Rathi , Derek R. Witty , Chiu Chan , Sohyun Park , Ganesh Balasubramanian , Karthik Janakiraman , Martin Jay Seamons , Visweswaren Sivaramakrishnan , Bok Hoen Kim , Hichem M'Saad
IPC分类号： C23C26/00 , H05H1/24
CPC分类号： H01L21/02115 , C23C16/045 , C23C16/26 , C23C16/5096 , C23C16/56 , H01L21/02274 , H01L21/31144 , H01L21/3146
摘要： A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.
摘要翻译：在基板上沉积无定形碳层的方法包括以下步骤：将基板定位在室中，将烃源引入处理室，将重稀有气体引入处理室，以及在处理室中产生等离子体。重稀土气体选自氩，氪，氙及其组合，惰性气体的摩尔流量大于烃源的摩尔流量。可以包括沉积终止步骤，其中停止烃源和惰性气体的流动，并且将等离子体保持在室中一段时间以从中除去颗粒。

3. 发明申请

US20080003824A1 Method For Depositing an Amorphous Carbon Film with Improved Density and Step Coverage 有权
标题翻译：沉积具有改进密度和阶梯覆盖的无定形碳膜的方法
公开(公告)号：US20080003824A1
公开(公告)日：2008-01-03
申请号：US11427324
申请日：2006-06-28
申请人： Deenesh Padhi , Hyoung-Chan Ha , Sudha Rathi , Derek R. Wtty , Chiu Chan , Sohyun Park , Ganesh Balasubramanian , Karthik Janakiraman , Martin Jay Seamons , Visweswaren Sivaramakrishnan , Bok Hoen Kim , Hichem M'Saad
发明人： Deenesh Padhi , Hyoung-Chan Ha , Sudha Rathi , Derek R. Wtty , Chiu Chan , Sohyun Park , Ganesh Balasubramanian , Karthik Janakiraman , Martin Jay Seamons , Visweswaren Sivaramakrishnan , Bok Hoen Kim , Hichem M'Saad
IPC分类号： H01L21/302
CPC分类号： H01L21/3146 , C23C16/045 , C23C16/26 , C23C16/5096 , C23C16/56 , H01L21/31144
摘要： A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.
摘要翻译：在基板上沉积无定形碳层的方法包括以下步骤：将基板定位在室中，将烃源引入处理室，将重稀有气体引入处理室，以及在处理室中产生等离子体。重稀土气体选自氩，氪，氙及其组合，惰性气体的摩尔流量大于烃源的摩尔流量。可以包括沉积终止步骤，其中停止烃源和惰性气体的流动，并且将等离子体保持在室中一段时间以从中除去颗粒。

4. 发明申请

US20110090613A1 APPARATUS AND METHOD FOR SUBSTRATE CLAMPING IN A PLASMA CHAMBER 有权
标题翻译：用于在等离子体室中衬底夹紧的装置和方法
公开(公告)号：US20110090613A1
公开(公告)日：2011-04-21
申请号：US12950105
申请日：2010-11-19
申请人： Ganesh Balasubramanian , Amit Bansal , Eller Y. Juco , Mohamad Ayoub , Hyung-Joon Kim , Karthik Janakiraman , Sudha Rathi , Deenesh Padhi , Martin Jay Seamons , Visweswaren Sivaramakrishnan , Bok Hoen Kim , Amir Al-Bayati , Derek R. Witty , Hichem M'Saad , Anton Baryshnikov , Chiu Chan , Shuang Liu
发明人： Ganesh Balasubramanian , Amit Bansal , Eller Y. Juco , Mohamad Ayoub , Hyung-Joon Kim , Karthik Janakiraman , Sudha Rathi , Deenesh Padhi , Martin Jay Seamons , Visweswaren Sivaramakrishnan , Bok Hoen Kim , Amir Al-Bayati , Derek R. Witty , Hichem M'Saad , Anton Baryshnikov , Chiu Chan , Shuang Liu
IPC分类号： H01L21/683 , H01L21/66 , G01R27/02
CPC分类号： H01L21/6831 , C23C16/52 , H01J37/32431 , H01L21/67069 , H01L21/67253
摘要： The present invention generally provides methods and apparatus for monitoring and maintaining flatness of a substrate in a plasma reactor. Certain embodiments of the present invention provide a method for processing a substrate comprising positioning the substrate on an electrostatic chuck, applying an RF power between the an electrode in the electrostatic chuck and a counter electrode positioned parallel to the electrostatic chuck, applying a DC bias to the electrode in the electrostatic chuck to clamp the substrate on the electrostatic chuck, and measuring an imaginary impedance of the electrostatic chuck.
摘要翻译：本发明通常提供了用于监测和维持等离子体反应器中的基板的平坦度的方法和装置。本发明的某些实施例提供了一种处理衬底的方法，包括将衬底定位在静电吸盘上，在静电吸盘中的电极与平行于静电吸盘的对置电极之间施加RF功率，将DC偏压施加到静电卡盘中的电极将基板夹在静电卡盘上，并测量静电卡盘的虚拟阻抗。

5. 发明授权

US09337072B2 Apparatus and method for substrate clamping in a plasma chamber 有权
标题翻译：用于在等离子体室中进行基板夹持的装置和方法
公开(公告)号：US09337072B2
公开(公告)日：2016-05-10
申请号：US12950105
申请日：2010-11-19
申请人： Ganesh Balasubramanian , Amit Bansal , Eller Y. Juco , Mohamad Ayoub , Hyung-Joon Kim , Karthik Janakiraman , Sudha Rathi , Deenesh Padhi , Martin Jay Seamons , Visweswaren Sivaramakrishnan , Bok Hoen Kim , Amir Al-Bayati , Derek R. Witty , Hichem M'Saad , Anton Baryshnikov , Chiu Chan , Shuang Liu
发明人： Ganesh Balasubramanian , Amit Bansal , Eller Y. Juco , Mohamad Ayoub , Hyung-Joon Kim , Karthik Janakiraman , Sudha Rathi , Deenesh Padhi , Martin Jay Seamons , Visweswaren Sivaramakrishnan , Bok Hoen Kim , Amir Al-Bayati , Derek R. Witty , Hichem M'Saad , Anton Baryshnikov , Chiu Chan , Shuang Liu
IPC分类号： H02N13/00 , H01L21/683 , C23C16/52 , H01J37/32 , H01L21/67
CPC分类号： H01L21/6831 , C23C16/52 , H01J37/32431 , H01L21/67069 , H01L21/67253
摘要： The present invention generally provides methods and apparatus for monitoring and maintaining flatness of a substrate in a plasma reactor. Certain embodiments of the present invention provide a method for processing a substrate comprising positioning the substrate on an electrostatic chuck, applying an RF power between the an electrode in the electrostatic chuck and a counter electrode positioned parallel to the electrostatic chuck, applying a DC bias to the electrode in the electrostatic chuck to clamp the substrate on the electrostatic chuck, and measuring an imaginary impedance of the electrostatic chuck.
摘要翻译：本发明通常提供了用于监测和维持等离子体反应器中的基板的平坦度的方法和装置。本发明的某些实施例提供了一种处理衬底的方法，包括将衬底定位在静电吸盘上，在静电吸盘中的电极与平行于静电吸盘的对置电极之间施加RF功率，将DC偏压施加到静电卡盘中的电极将基板夹在静电卡盘上，并测量静电卡盘的假想阻抗。

6. 发明授权

US07867578B2 Method for depositing an amorphous carbon film with improved density and step coverage 有权
标题翻译：沉积具有改善的密度和阶梯覆盖的无定形碳膜的方法
公开(公告)号：US07867578B2
公开(公告)日：2011-01-11
申请号：US11427324
申请日：2006-06-28
申请人： Deenesh Padhi , Hyoung-Chan Ha , Sudha Rathi , Derek R. Witty , Chiu Chan , Sohyun Park , Ganesh Balasubramanian , Karthik Janakiraman , Martin Jay Seamons , Visweswaren Sivaramakrishnan , Bok Hoen Kim , Hichem M'Saad
发明人： Deenesh Padhi , Hyoung-Chan Ha , Sudha Rathi , Derek R. Witty , Chiu Chan , Sohyun Park , Ganesh Balasubramanian , Karthik Janakiraman , Martin Jay Seamons , Visweswaren Sivaramakrishnan , Bok Hoen Kim , Hichem M'Saad
IPC分类号： H05H1/24
CPC分类号： H01L21/3146 , C23C16/045 , C23C16/26 , C23C16/5096 , C23C16/56 , H01L21/31144
摘要： A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.
摘要翻译：在基板上沉积无定形碳层的方法包括以下步骤：将基板定位在室中，将烃源引入处理室，将重稀有气体引入处理室，以及在处理室中产生等离子体。重稀土气体选自氩，氪，氙及其组合，惰性气体的摩尔流量大于烃源的摩尔流量。可以包括沉积终止步骤，其中停止烃源和惰性气体的流动，并且将等离子体保持在室中一段时间以从中除去颗粒。

7. 发明申请

US20120208373A1 METHOD FOR DEPOSITING AN AMORPHOUS CARBON FILM WITH IMPROVED DENSITY AND STEP COVERAGE 审中-公开
标题翻译：用改进的密度和步骤覆盖沉积非晶碳膜的方法
公开(公告)号：US20120208373A1
公开(公告)日：2012-08-16
申请号：US13455984
申请日：2012-04-25
申请人： DEENESH PADHI , Hyoung-Chan Ha , Sudha Rathi , Derek R. Witty , Chiu Chan , Sohyun Park , Ganesh Balasubramanian , Karthik Janakiraman , Martin Jay Seamons , Visweswaren Sivaramakrishnan , Bok Hoen Kim , Hichem M'Saad
发明人： DEENESH PADHI , Hyoung-Chan Ha , Sudha Rathi , Derek R. Witty , Chiu Chan , Sohyun Park , Ganesh Balasubramanian , Karthik Janakiraman , Martin Jay Seamons , Visweswaren Sivaramakrishnan , Bok Hoen Kim , Hichem M'Saad
IPC分类号： H01L21/31
CPC分类号： H01L21/02115 , C23C16/045 , C23C16/26 , C23C16/5096 , C23C16/56 , H01L21/02274 , H01L21/31144 , H01L21/3146
摘要： A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.
摘要翻译：在基板上沉积无定形碳层的方法包括以下步骤：将基板定位在室中，将烃源引入处理室，将重稀有气体引入处理室，以及在处理室中产生等离子体。重稀土气体选自氩，氪，氙及其组合，惰性气体的摩尔流量大于烃源的摩尔流量。可以包括沉积终止步骤，其中停止烃源和惰性气体的流动，并且将等离子体保持在室中一段时间以从中除去颗粒。

8. 发明申请

US20080153311A1 METHOD FOR DEPOSITING AN AMORPHOUS CARBON FILM WITH IMPROVED DENSITY AND STEP COVERAGE 审中-公开
标题翻译：用改进的密度和步骤覆盖沉积非晶碳膜的方法
公开(公告)号：US20080153311A1
公开(公告)日：2008-06-26
申请号：US12042829
申请日：2008-03-05
申请人： Deenesh Padhi , Hyoung-Chan Ha , Sudha Rathi , Derek R. Witty , Chiu Chan , Sohyun Park , Ganesh Balasubramanian , Karthik Janakiraman , Martin Jay Seamons , Visweswaren Sivaramakrishnan , Bok Hoen Kim , Hichem M'Saad
发明人： Deenesh Padhi , Hyoung-Chan Ha , Sudha Rathi , Derek R. Witty , Chiu Chan , Sohyun Park , Ganesh Balasubramanian , Karthik Janakiraman , Martin Jay Seamons , Visweswaren Sivaramakrishnan , Bok Hoen Kim , Hichem M'Saad
IPC分类号： H01L21/31
CPC分类号： H01L21/02115 , C23C16/045 , C23C16/26 , C23C16/5096 , C23C16/56 , H01L21/02274 , H01L21/31144 , H01L21/3146
摘要： A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.
摘要翻译：在基板上沉积无定形碳层的方法包括以下步骤：将基板定位在室中，将烃源引入处理室，将重稀有气体引入处理室，以及在处理室中产生等离子体。重稀土气体选自氩，氪，氙及其组合，惰性气体的摩尔流量大于烃源的摩尔流量。可以包括沉积终止步骤，其中停止烃源和惰性气体的流动，并且将等离子体保持在室中一段时间以从中除去颗粒。

9. 发明申请

US20110291243A1 PLANARIZING ETCH HARDMASK TO INCREASE PATTERN DENSITY AND ASPECT RATIO 失效
公开(公告)号：US20110291243A1
公开(公告)日：2011-12-01
申请号：US12790203
申请日：2010-05-28
申请人： Martin Jay Seamons , Kwangduk Douglas Lee , Chiu Chan , Patrick Reilly , Sudha Rathi
发明人： Martin Jay Seamons , Kwangduk Douglas Lee , Chiu Chan , Patrick Reilly , Sudha Rathi
IPC分类号： H01L21/302 , H01L23/52 , G03F7/20 , H01L21/30
CPC分类号： H01L21/02115 , H01L21/02274 , H01L21/0332 , H01L21/0337
摘要： Methods for manufacturing a semiconductor device in a processing chamber are provided. In one embodiment, a method includes depositing over a substrate a first base material having a first set of interconnect features, filling an upper portion of the first set of interconnect features with an ashable material to an extent capable of protecting the first set of interconnect features from subsequent processes while being easily removable when desired, planarizing an upper surface of the first base material such that an upper surface of the ashable material filled in the first set of interconnect features is at the same level with the upper surface of the first base material, providing a substantial planar outer surface of the first base material, depositing a first film stack comprising a second base material on the substantial planar outer surface of the first base material, forming a second set of interconnect features in the second base material, wherein the second set of interconnect features are aligned with the first set of interconnect features, and removing the ashable material from the first base material, thereby extending a feature depth of the semiconductor device by connecting the second set of interconnect features to the first set of interconnect features. In another embodiment, a method includes providing a base material having a first film stack deposited thereon, wherein the base material is formed over the substrate and having a first set of interconnect features filled with an amorphous carbon material, the first film stack comprising a first amorphous carbon layer deposited on a surface of the base material, a first anti-reflective coating layer deposited on the first amorphous carbon layer, and a first photoresist layer deposited on the first anti-reflective coating layer, and patterning a portion of the first photoresist layer by shifting laterally a projection of a mask on the first photoresist layer relative to the substrate a desired distance, thereby introducing into the first photoresist layer a first feature pattern to be transferred to the underlying base material, wherein the first feature pattern is not aligned with the first set of interconnect features.

10. 发明申请

US20110287633A1 ULTRA HIGH SELECTIVITY ASHABLE HARD MASK FILM 有权
标题翻译：超高选择性的硬掩膜
公开(公告)号：US20110287633A1
公开(公告)日：2011-11-24
申请号：US12784341
申请日：2010-05-20
申请人： Kwangduk Douglas Lee , Martin Jay Seamons , Sudha Rathi , Chiu Chan , Michael H. Lin
发明人： Kwangduk Douglas Lee , Martin Jay Seamons , Sudha Rathi , Chiu Chan , Michael H. Lin
IPC分类号： H01L21/3105 , H01L21/312
CPC分类号： H01L21/02115 , C23C16/26 , H01L21/02274 , H01L21/31144
摘要： A method of forming an amorphous carbon layer on a substrate in a substrate processing chamber, includes introducing a hydrocarbon source into the processing chamber, introducing argon, alone or in combination with helium, hydrogen, nitrogen, and combinations thereof, into the processing chamber, wherein the argon has a volumetric flow rate to hydrocarbon source volumetric flow rate ratio of about 10:1 to about 20:1, generating a plasma in the processing chamber at a substantially lower pressure of about 2 Torr to 10 Torr, and forming a conformal amorphous carbon layer on the substrate.
摘要翻译：在基板处理室中的基板上形成无定形碳层的方法包括将烃源引入到处理室中，将氩单独或与氦，氢，氮及其组合单独或组合地引入到处理室中，其中氩气具有约10:1至约20:1的烃源体积流量比的体积流速，在处理室中以约2托至10托的基本较低的压力产生等离子体，并形成保形无定形碳层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式