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    • 2. 发明授权
    • Metallized film for electrical capacitors having a semiconductive layer
extending entirely across the unmetallized margin
    • 具有完全延伸穿过未金属化边缘的半导体层的电容器的金属化膜
    • US5615078A
    • 1997-03-25
    • US357376
    • 1994-12-16
    • Martin HudisMamoru KoebisuKenji Hatada
    • Martin HudisMamoru KoebisuKenji Hatada
    • H01G4/18H01G4/38H01G4/06H01G4/008
    • H01G4/38
    • A film capacitor in which the unmetallized margin is provided with a semiconductive layer. The layer provides a parallel resistive path within the capacitor, itself, obviating the need for an external resistor. It also grades the electric field across the margin, i.e., makes the field more uniform, thus allowing the margin to be made narrower without electrical breakdown, permitting a reduction in the physical size of the capacitor. A refractory, semiconductive layer is provided between the metal layer and the dielectric film. The refractory layer accelerates the self-clearing process, by insulating the underlying dielectric film from the heat generated by the vaporizing metal, thus hastening vaporization and reducing the tendency of the dielectric film to carbonize. As a result, faults are cleared with substantially less energy consumption. Preferably, the refractory layer is also semiconductive, to reduce field emission effects, and thereby decrease the frequency of faults in the dielectric film.
    • 一种薄膜电容器,其中未金属化的边缘设置有半导体层。 该层本身提供了电容器内部的并联电阻通路,从而避免了外部电阻器的需要。 它还对跨越边缘的电场进行分级,即使场更均匀,从而允许使边缘变窄,而不会发生电击穿,从而可以减小电容器的物理尺寸。 在金属层和电介质膜之间设置难熔的半导体层。 耐火层通过将下面的电介质膜与由汽化金属产生的热量隔离来加速自清洁过程,从而加速蒸发并降低电介质膜碳化的趋势。 因此,能够消耗大量能量来清除故障。 优选地,耐火层也是半导体的,以减少场发射效应,从而降低电介质膜中的故障频率。