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1. 发明申请

US20090234610A1 Arrangement for Calibrating a Vector Network Analyzer 有权
标题翻译：校准矢量网络分析仪的安排
公开(公告)号：US20090234610A1
公开(公告)日：2009-09-17
申请号：US12403943
申请日：2009-03-13
申请人： Martin Grassl , Anton Lindner , Reimer Nagel , Michael Lege
发明人： Martin Grassl , Anton Lindner , Reimer Nagel , Michael Lege
IPC分类号： G01R35/00 , G06F19/00
CPC分类号： G01R35/007 , G01R27/32
摘要： An arrangement for calibrating a vector network analyzer (VNA) is substantially secure against operating errors and offers cost-effective calibration by connecting calibration components. Each calibration component includes a transponder and a non-volatile memory which contains, as non-changeable data, at least the type of the component and an individual identification number and, as changeable data, at least the number of calibration processes performed with this calibration component. The VNA includes a wireless interface for reading at least the non-changeable data of a respective calibration component and for incrementing the stored number of the calibration processes performed with this calibration component.
摘要翻译：用于校准矢量网络分析仪（VNA）的布置基本上是防止操作错误的，并且通过连接校准部件提供经济有效的校准。每个校准组件包括应答器和非易失性存储器，其包含作为不可更改数据的至少该组件的类型和单个标识号，并且作为可变数据至少包含使用该校准执行的校准过程的数量零件。 VNA包括用于读取至少相应校准组件的不可更改数据的无线接口，并且用于递增用该校准组件执行的存储的校准过程的数量。

2. 发明授权

US08041528B2 Arrangement for calibrating a vector network analyzer 有权
标题翻译：用于校准矢量网络分析仪的布置
公开(公告)号：US08041528B2
公开(公告)日：2011-10-18
申请号：US12403943
申请日：2009-03-13
申请人： Martin Grassl , Anton Lindner , Reimer Nagel , Michael Lege
发明人： Martin Grassl , Anton Lindner , Reimer Nagel , Michael Lege
IPC分类号： G01R35/00 , G06F19/00
CPC分类号： G01R35/007 , G01R27/32
摘要： An arrangement for calibrating a vector network analyzer (VNA) is substantially secure against operating errors and offers cost-effective calibration by connecting calibration components. Each calibration component includes a transponder and a non-volatile memory which contains, as non-changeable data, at least the type of the component and an individual identification number and, as changeable data, at least the number of calibration processes performed with this calibration component. The VNA includes a wireless interface for reading at least the non-changeable data of a respective calibration component and for incrementing the stored number of the calibration processes performed with this calibration component.
摘要翻译：用于校准矢量网络分析仪（VNA）的布置基本上是防止操作错误的，并且通过连接校准部件提供经济有效的校准。每个校准组件包括应答器和非易失性存储器，其包含作为不可更改数据的至少该组件的类型和单个标识号，并且作为可变数据至少包含使用该校准执行的校准过程的数量零件。 VNA包括用于读取至少相应校准组件的不可更改数据的无线接口，并且用于递增用该校准组件执行的存储的校准过程的数量。

3. 发明申请

US20080268613A1 Semiconductor Substrate And Method For Production Thereof 失效
标题翻译：半导体基板及其制造方法
公开(公告)号：US20080268613A1
公开(公告)日：2008-10-30
申请号：US12120285
申请日：2008-05-14
申请人： Josef Brunner , Hiroyuki Deai , Atsushi Ikari , Martin Grassl , Atsuki Matsumura , Wilfried von Ammon
发明人： Josef Brunner , Hiroyuki Deai , Atsushi Ikari , Martin Grassl , Atsuki Matsumura , Wilfried von Ammon
IPC分类号： H01L21/265
CPC分类号： H01L21/76256 , H01L21/02126 , H01L21/02236 , H01L21/02238 , H01L21/02255 , H01L21/02299 , H01L21/02323 , H01L21/02351 , H01L21/26533 , H01L21/31658 , H01L21/76243
摘要： Hetero-semiconductor structures possessing an SOI structure containing a silicon-germanium mixed crystal are produced at a low cost and high productivity. The semiconductor substrates comprise a first layer formed of silicon having germanium added thereto, a second layer formed of an oxide and adjoined to the first layer, and a third layer derived from the same source as the first layer, but having an enriched content of germanium as a result of thermal oxidation and thinning of the third layer.
摘要翻译：以低成本和高生产率生产具有含硅锗混合晶体的SOI结构的异质半导体结构。半导体衬底包括由添加有锗的硅形成的第一层，由氧化物形成并与第一层相邻的第二层，以及源自与第一层相同的源但具有富锗含量的锗的第三层作为第三层的热氧化和变薄的结果。

4. 外观设计

USD348004S Bottle 失效
公开(公告)号：USD348004S
公开(公告)日：1994-06-21
申请号：US822849
申请日：1992-01-24
申请人： Martin Grassl
设计人： Martin Grassl

5. 发明授权

US08043929B2 Semiconductor substrate and method for production thereof 失效
标题翻译：半导体基板及其制造方法
公开(公告)号：US08043929B2
公开(公告)日：2011-10-25
申请号：US12120285
申请日：2008-05-14
申请人： Josef Brunner , Hiroyuki Deai , Atsushi Ikari , Martin Grassl , Atsuki Matsumura , Wilfried von Ammon
发明人： Josef Brunner , Hiroyuki Deai , Atsushi Ikari , Martin Grassl , Atsuki Matsumura , Wilfried von Ammon
IPC分类号： H01L21/265
CPC分类号： H01L21/76256 , H01L21/02126 , H01L21/02236 , H01L21/02238 , H01L21/02255 , H01L21/02299 , H01L21/02323 , H01L21/02351 , H01L21/26533 , H01L21/31658 , H01L21/76243
摘要： Hetero-semiconductor structures possessing an SOI structure containing a silicon-germanium mixed crystal are produced at a low cost and high productivity. The semiconductor substrates comprise a first layer formed of silicon having germanium added thereto, a second layer formed of an oxide and adjoined to the first layer, and a third layer derived from the same source as the first layer, but having an enriched content of germanium as a result of thermal oxidation and thinning of the third layer.
摘要翻译：以低成本和高生产率生产具有含硅锗混合晶体的SOI结构的异质半导体结构。半导体衬底包括由添加有锗的硅形成的第一层，由氧化物形成并与第一层相邻的第二层，以及源自与第一层相同的源但具有富锗含量的锗的第三层作为第三层的热氧化和变薄的结果。

6. 发明申请

US20050139961A1 Semiconductor substrate and method for production thereof 审中-公开
标题翻译：半导体基板及其制造方法
公开(公告)号：US20050139961A1
公开(公告)日：2005-06-30
申请号：US11012935
申请日：2004-12-15
申请人： Josef Brunner , Hiroyuki Deai , Atsushi Ikari , Martin Grassl , Atsuki Matsumura , Wilfried Ammon
发明人： Josef Brunner , Hiroyuki Deai , Atsushi Ikari , Martin Grassl , Atsuki Matsumura , Wilfried Ammon
IPC分类号： H01L21/76 , H01L21/02 , H01L21/20 , H01L21/265 , H01L21/316 , H01L21/762 , H01L27/12 , H01L29/165 , H01L29/786 , H01L29/06
CPC分类号： H01L21/26533 , H01L21/02126 , H01L21/02236 , H01L21/02238 , H01L21/02255 , H01L21/02299 , H01L21/02323 , H01L21/02351 , H01L21/31658 , H01L21/76243 , H01L21/76256
摘要： Hetero-semiconductor structures possessing an SOI structure containing a silicon-germanium mixed crystal are produced at a low cost and high productivity. The semiconductor substrates comprise a first layer formed of silicon having germanium added thereto, a second layer formed of an oxide and adjoined to the first layer, and a third layer derived from the same source as the first layer, but having an enriched content of germanium as a result of thermal oxidation and thinning of the third layer.
摘要翻译：以低成本和高生产率生产具有含硅锗混合晶体的SOI结构的异质半导体结构。半导体衬底包括由添加有锗的硅形成的第一层，由氧化物形成并与第一层相邻的第二层，以及源自与第一层相同的源但具有富锗含量的锗的第三层作为第三层的热氧化和变薄的结果。

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