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    • 6. 发明授权
    • Semiconductor memory having redundancy circuit
    • 具有冗余电路的半导体存储器
    • US6078534A
    • 2000-06-20
    • US937570
    • 1997-09-25
    • Karl-Peter PfefferlMartin Gall
    • Karl-Peter PfefferlMartin Gall
    • G11C29/04G11C29/00G11C7/00
    • G11C29/789G11C29/80
    • A memory having an array of memory cells. The array includes a plurality of normal memory cells and a redundant memory cell. A decoder is provided for selecting an addressed one of the normal memory cells in response to an address and a normal condition signal and adapted address the redundant memory cell in response to the address and a fault condition signal. A redundant decoder is provided having an electronically erasable read-only-memory cell. The redundant decoder is adapted to produce the normal condition signal and to convert the normal condition signal into the fault condition signal when such read-only-memory cell is programmed into a fault condition. Each one of the read-only memory cells include a flash memory cell, a ferroelectric memory cell, or other such type of electronically erasable read-only memory cell which is substantially non-volatile and is able to retain its programmed state for a relatively long period of time. With such an arrangement, because the electronically erasable read-only-memory cell is electronically programmable, a defective normal memory cell may be replaced with a redundant memory cell the memory is packaged.
    • 具有存储器单元阵列的存储器。 阵列包括多个正常存储器单元和冗余存储单元。 提供了一种解码器,用于响应于地址和正常条件信号选择正常存储器单元中的寻址的一个,并响应于该地址和故障状态信号对该冗余存储器单元进行了适配地址。 提供了具有电可擦除只读存储器单元的冗余解码器。 当这种只读存储器单元被编程到故障状态时,冗余解码器适于产生正常条件信号并将正常条件信号转换成故障条件信号。 只读存储器单元中的每一个包括快闪存储器单元,铁电存储器单元或其他这种类型的电可擦除只读存储器单元,其基本上是非易失性的并且能够将其编程状态保持相对较长 一段的时间。 通过这样的布置,由于电子可擦除只读存储器单元是可电子编程的,所以可以用存储器封装的冗余存储器单元替换有缺陷的正常存储单元。
    • 9. 发明授权
    • [3-Substituted-5-[(di-methylamino)methyl]-4H-1,2,4-triazol-
4-yl]benzophenones and process
    • {8,3-取代的5- {8(二甲基氨基)甲基{9 -4 H-1,2,4-三唑-4-基} {9二苯甲酮和方法
    • US4010177A
    • 1977-03-01
    • US584616
    • 1975-06-06
    • Martin Gall
    • Martin Gall
    • C07D243/20C07D249/08C07D487/04C07D401/06C07D403/06C07D413/06
    • C07D249/08C07D243/20C07D487/04
    • Compounds of the formula I: ##STR1## wherein R.sub.1 is hydroxymethyl, or -CH.sub.2 NR.sub.6 R.sub.7, in which R.sub.6 is -CH.sub.2 -C.tbd.CH, -CH.sub.2 -CH=CH.sub.2, ##STR2## or alkyl of 1 to 3 carbon atoms, inclusive; R.sub.7 is hydrogen or alkyl of 1 to 3 carbon atoms, or together ##STR3## is pyrrolidino, piperidino or morpholino; wherein R.sub.2 is hydrogen, chlorine or fluorine; wherein R.sub.3 is hydrogen, or fluorine if R.sub.2 is fluorine; wherein R.sub.4 is hydrogen, fluorine, chlorine, bromine, nitro, or trifluoromethyl; and wherein R.sub.5 is hydrogen, methyl or ethyl. These compounds, except those in which R.sub.7 is hydrogen, are produced by heating a compound of formula II: ##STR4## wherein R.sub.2, R.sub.3, R.sub.4, and R.sub.5 are defined as hereinabove, and wherein R'.sub.1 is the same as R.sub.1 except that in defining R'.sub.1,R.sub.7 may not be hydrogen, with aqueous formaldehyde in formic acid solution at reflux temperature (about 100.degree. C.).Compounds in which R.sub.7 are hydrogen require steps further shown in the specification.The compounds of formula I and their pharmacologically acceptable acid addition salts thereof have tranquilizing, anti-anxiety and anti-convulsant activity useful for the treatment of animals and man.
    • 式I的化合物:其中R 1是羟甲基或-CH 2 NR 6 R 7,其中R 6是-CH 2 -C 3 CH 3,CH 2 -CH = CH 2,或者具有1至3个碳原子的烷基,包括 ; R 7是氢或1至3个碳原子的烷基,或者一起是吡咯烷子基,哌啶子基或吗啉代; 其中R2是氢,氯或氟; 其中R 3为氢,或如果R 2为氟,则为氟; 其中R4是氢,氟,氯,溴,硝基或三氟甲基; 并且其中R 5是氢,甲基或乙基。 这些化合物除了R7是氢的化合物之外,是通过加热式II化合物制备的:其中R2,R3,R4和R5如上所定义,并且其中R'1与R1相同,除了 在定义R'1时,R7可能不是氢,甲醛水溶液在甲酸溶液中在回流温度(约100℃)下。