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1. 发明授权

US6159285A Converting <100> and <111> ingots to <110> ingots 失效
标题翻译：将<100>和<111>锭转换为<110>锭
公开(公告)号：US6159285A
公开(公告)日：2000-12-12
申请号：US306669
申请日：1999-05-06
申请人： Marshall P. Toombs , Thomas G. Digges, Jr.
发明人： Marshall P. Toombs , Thomas G. Digges, Jr.
IPC分类号： B28D5/00 , B24B5/00
CPC分类号： B28D5/00 , Y10S117/902
摘要： A new ingot of a desired orientation formed from an original ingot of a different orientation by cutting the new ingot from within the original ingot. In one aspect, to form a ingot from a ingot, a {110} flat is formed on the ingot. The flat is used as a reference for cutting the ingot. The ingot is cut into sections by cutting in a plane perpendicular to the ingot's longitudinal axis and to the flat. A ingot can be formed by grinding a section of the ingot to form a new cylinder. The new cylinder has a longitudinal axis which is perpendicular to the ingot's longitudinal axis and to the flat. The resulting cylinder is a ingot.
摘要翻译：通过从原始锭块中切割新的锭，形成由不同取向的原始锭块形成的期望取向的新锭料。在一个方面，为了从<100>锭形成<110>锭，在<100>锭上形成{110}扁平。该平板用作切割<100>锭的参考。通过在垂直于<100>锭的纵轴的平面上切割<100>锭，并将其切割成平面。可以通过研磨<100>锭的一部分来形成<110>锭，以形成新的圆筒。新圆柱体具有垂直于<100>锭的纵向轴线和平面的纵向轴线。所得的圆筒是<110>锭。

2. 发明授权

US06428618B2 Method for forming a solid solution alloy crystal 失效
标题翻译：形成固溶体合金晶体的方法
公开(公告)号：US06428618B2
公开(公告)日：2002-08-06
申请号：US09780058
申请日：2001-02-09
申请人： Richard H. Deitch , Thomas G. Digges, Jr.
发明人： Richard H. Deitch , Thomas G. Digges, Jr.
IPC分类号： C30B1520
CPC分类号： C30B15/36 , C30B15/00 , C30B29/52 , Y10T117/10
摘要： A method for forming a solid solution alloy crystal includes forming a solid solution alloy crystal having at least the same diameter as a seed crystal. The seed crystal is exposed to a liquid containing a desired concentration of an alloying element to dissolve a portion of the seed crystal. The solid solution alloy crystal is then formed from the liquid. The method allows a large diameter solid solution alloy crystal to be grown in a reduced time or a larger diameter solid solution alloy crystal to be grown in a known fixed total process time.
摘要翻译：形成固溶体合金晶体的方法包括形成至少具有与晶种相同直径的固溶体合金晶体。将晶种暴露于含有所需浓度的合金元素的液体中以溶解晶种的一部分。然后从液体形成固溶体合金晶体。该方法允许大直径固溶体合金晶体在减少的时间或更大直径的固溶体合金晶体中生长，以在已知的固定的总处理时间内生长。

3. 发明授权

US5843832A Method of formation of thin bonded ultra-thin wafers 失效
标题翻译：形成薄键合超薄晶片的方法
公开(公告)号：US5843832A
公开(公告)日：1998-12-01
申请号：US396237
申请日：1995-03-01
申请人： Kenneth R. Farmer , Thomas G. Digges, Jr. , N. Perry Cook
发明人： Kenneth R. Farmer , Thomas G. Digges, Jr. , N. Perry Cook
IPC分类号： H01L21/20 , H01L21/762 , H01L21/76
CPC分类号： H01L21/2007 , H01L21/76251 , Y10S438/973
摘要： A technique of bonding a thin wafer layer to a substrate. The wafer is blown dry using an inert gas to prevent it from being damaged, while still ensuring that it dries completely. The initial bonding is done by orienting crystallographic axes, and then allowing the wafers to adhere to one another slowly. The contact wave is prevented from spreading, by a divider between the two wafers. The wafers are allowed to adhere to one another slowly to form a bond. The bond is strengthened by annealing.
摘要翻译：将薄晶片层接合到基板的技术。使用惰性气体将晶片吹干以防止其损坏，同时仍然确保其完全干燥。初始粘合通过定向晶轴进行，然后允许晶片缓慢粘附。通过两个晶片之间的分隔器防止接触波扩散。允许晶片缓慢粘合以形成结合。退火加强了粘结。

4. 发明授权

US4140570A Method of growing single crystal silicon by the Czochralski method which eliminates the need for post growth annealing for resistivity stabilization 失效
标题翻译：通过Czochralski法生长单晶硅的方法，其消除了对电阻率稳定化的后生长退火的需要
公开(公告)号：US4140570A
公开(公告)日：1979-02-20
申请号：US417437
申请日：1973-11-19
申请人： Frederic W. Voltmer , Thomas G. Digges, Jr.
发明人： Frederic W. Voltmer , Thomas G. Digges, Jr.
IPC分类号： C30B15/00 , C30B15/14 , H01L21/322 , B01J17/18 , C01B33/02
CPC分类号： C30B29/06 , C30B15/14 , C30B15/206 , H01L21/3221
摘要： This disclosure relates to a technique of improving the quality of crystals grown by the Czochralski method by substantially eliminating the formation of electrically active oxygen complexes during growth. The oxygen which forms these complexes is liberated from the quartz liner which contains the silicon melt. It has been found that electrically active oxygen complexes (oxygen donors) are formed in the silicon lattice during crystal growth when the crystal is in the range of 300-500.degree. C. Above and below this temperature range, the formation of oxygen donors in the silicon lattice is minimal. The crystal is therefore maintained in its entirety above the temperature of 500.degree. C. and then is quenched to be quickly brought below the 300.degree. C. level. In this way, the silicon crystal is in the 300.degree. C. to 500.degree. C. range for a minimal period of time, thereby minimizing the amount of oxygen donor formation in the silicon lattice during growth. The quenching can take place along the entire rod after it has been pulled, or it can take place on a zone basis along the rod after it is moved away from the melt.
摘要翻译：本公开涉及通过在生长期间基本上消除电活性氧络合物的形成来提高通过切克劳斯基法生长的晶体的质量的技术。形成这些络合物的氧从含有硅熔体的石英衬垫中释放出来。已经发现，当晶体在300-500℃的范围内时，在晶格生长期间，在硅晶格中形成电活性氧络合物（氧供体）。在该温度范围之上和之下，在硅晶格最小。因此，晶体整体保持在500℃以上，然后淬火以迅速降至300℃以下。以这种方式，硅晶体在300℃至500℃的范围内处于最短的时间段内，从而使生长期间硅晶格中氧供体形成的量最小化。淬火可以在整个拉杆被拉扯之后发生，或者它可以沿着杆沿着该棒移动离开熔体后沿区域发生。

5. 发明授权

US06554687B1 Precise crystallographic-orientation alignment mark for a semiconductor wafer 失效
标题翻译：用于半导体晶片的精确晶体取向对准标记
公开(公告)号：US06554687B1
公开(公告)日：2003-04-29
申请号：US09966321
申请日：2001-09-27
申请人： Stephen H. Jones , Thomas G. Digges, Jr. , Christopher Mark Mann , Grant H. Ancarrow
发明人： Stephen H. Jones , Thomas G. Digges, Jr. , Christopher Mark Mann , Grant H. Ancarrow
IPC分类号： B24C104
CPC分类号： H01L21/67282 , B24C1/04
摘要： A semiconductor wafer manufactured with a precise crystallographic-orientation alignment mark and a method of manufacturing. The method of manufacturing may include forcibly directing a carrier medium containing an abrasive material through a stencil to effect abrasive impact removal of a semiconductor surface in a defined machining area. The abrasive impact removal may be part of an automated machining process.
摘要翻译：以精确的晶体取向对准标记制造的半导体晶片和制造方法。制造方法可以包括强制地将含有研磨材料的载体介质通过模板引导，以在限定的加工区域中实现半导体表面的磨料冲击去除。磨料冲击去除可以是自动加工过程的一部分。

6. 发明授权

US06251181B1 Method for forming a solid solution alloy crystal 失效
公开(公告)号：US06251181B1
公开(公告)日：2001-06-26
申请号：US09336305
申请日：1999-06-18
申请人： Richard H. Deitch , Thomas G. Digges, Jr.
发明人： Richard H. Deitch , Thomas G. Digges, Jr.
IPC分类号： C30B1520
CPC分类号： C30B15/36 , C30B15/00 , C30B29/52 , Y10T117/10
摘要： A method for forming a solid solution alloy crystal includes forming a solid solution alloy crystal having at least the same diameter as a seed crystal. The seed crystal is exposed to a liquid containing a desired concentration of an alloying element to dissolve a portion of the seed crystal. The solid solution alloy crystal is then formed from the liquid. The method allows a large diameter solid solution alloy crystal to be grown in a reduced time or a larger diameter solid solution alloy crystal to be grown in a known fixed total process time.

7. 发明授权

US6080042A Flatness and throughput of single side polishing of wafers 失效
标题翻译：晶圆单面抛光的平整度和产量
公开(公告)号：US6080042A
公开(公告)日：2000-06-27
申请号：US961815
申请日：1997-10-31
申请人： Anderson D. McGregor , Thomas G. Digges, Jr.
发明人： Anderson D. McGregor , Thomas G. Digges, Jr.
IPC分类号： B24B37/04 , B24B1/00
CPC分类号： B24B37/04
摘要： A wafer polishing apparatus includes one or more wafer carriers each containing one or more wafers mounted on both sides of the carrier. Upper and lower turntables having upper and lower polishing surfaces, rotate to polish the wafers attached to the carriers. Hence, wafers on the top of the carriers, and wafers on the bottom of the carriers are polished simultaneously. This configuration increases throughput; also, thermal deformations in the wafers are reduced, thus improving flatness.
摘要翻译：晶片抛光装置包括一个或多个晶片载体，每个晶片载体包含安装在载体两侧的一个或多个晶片。上下转盘具有上和下抛光表面，旋转以抛光附着于载体的晶片。因此，载体顶部的晶片和载体底部的晶片被同时抛光。此配置增加吞吐量; 此外，晶片中的热变形也减少，从而提高平坦度。

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