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1. 发明授权

US5543641A Hybrid signal conditioning/infared imaging structure 失效
标题翻译：混合信号调理/成像结构
公开(公告)号：US5543641A
公开(公告)日：1996-08-06
申请号：US471897
申请日：1995-06-07
申请人： Mark V. Wadsworth , Sebastian R. Borrello , Roland W. Gooch
发明人： Mark V. Wadsworth , Sebastian R. Borrello , Roland W. Gooch
IPC分类号： H01L27/148 , H01L29/768
CPC分类号： H01L27/14881 , H01L27/14856
摘要： A preferred embodiment of this invention is a hybrid semiconductor imaging structure comprising a high speed signal conditioning substrate (e.g. Si 12) and an imaging substrate (e.g. HgCdTe 10) mounted on the conditioning substrate using an adhesive layer (e.g. epoxy 31). Infrared-sensitive time delay and integration CCD columns (14) charge coupled to sense nodes (e.g. diodes 16) are disposed in the imaging substrate. High speed signal processing channels (e.g. capacitive transimpedance amplifier 18, congelated double sampling circuit 20 and multiplexing shift register 22) are disposed in the conditioning substrate. The sense nodes are connected to the signal processing channels with low capacitance hybrid leads (e.g AI 17).
摘要翻译：本发明的优选实施例是一种混合半导体成像结构，其包括使用粘合剂层（例如环氧树脂31）安装在调理基板上的高速信号调理基板（例如Si 12）和成像基板（例如HgCdTe 10）。耦合到感测节点（例如二极管16）的红外敏感时间延迟和积分CCD列（14）被布置在成像衬底中。高速信号处理通道（例如，电容互阻放大器18，凝结双采样电路20和复用移位寄存器22）设置在调理基板中。感测节点连接到具有低电容混合引线（例如AI 17）的信号处理通道。

2. 发明授权

US5449908A Hybrid CCD imaging 失效
标题翻译：混合CCD成像
公开(公告)号：US5449908A
公开(公告)日：1995-09-12
申请号：US175876
申请日：1993-12-30
申请人： Mark V. Wadsworth , Sebastian R. Borrello , Roland W. Gooch
发明人： Mark V. Wadsworth , Sebastian R. Borrello , Roland W. Gooch
IPC分类号： H01L27/148
CPC分类号： H01L27/14881 , H01L27/14856
摘要： A hybrid semiconductor imaging structure comprising a high speed signal conditioning substrate (e.g. Si 12) and an imaging substrate (e.g. HgCdTe 10) mounted on the conditioning substrate using an adhesive layer (e.g. epoxy 31). Infrared-sensitive time delay and integration CCD columns (14) charge coupled to sense nodes (e.g. diodes 16) are disposed in the imaging substrate. High speed signal processing channels (e.g. capacitive transimpedance amplifier 18, correlated double sampling circuit 20 and multiplexing shift register 22) are disposed in the conditioning substrate. The sense nodes are connected to the signal processing channels with low capacitance hybrid leads (e.g A1 17).
摘要翻译：包括使用粘合剂层（例如环氧树脂31）安装在调理基板上的高速信号调理基板（例如Si 12）和成像基板（例如HgCdTe 10）的混合半导体成像结构。耦合到感测节点（例如二极管16）的红外敏感时间延迟和积分CCD列（14）被布置在成像衬底中。高速信号处理通道（例如，电容跨阻放大器18，相关双采样电路20和复用移位寄存器22）设置在调理基板中。感测节点连接到具有低电容混合引线（例如A1 17）的信号处理通道。

3. 发明授权

US06392232B1 High fill factor bolometer array 失效
标题翻译：高填充因子测辐射热计阵列
公开(公告)号：US06392232B1
公开(公告)日：2002-05-21
申请号：US08690274
申请日：1996-07-19
申请人： Roland W. Gooch , Mark V. Wadsworth
发明人： Roland W. Gooch , Mark V. Wadsworth
IPC分类号： G01J510
CPC分类号： H01L27/16 , G01J5/20 , G01N21/61
摘要： An array of bolometers suspended over a substrate by support arms located beneath the corresponding bolometer to allow maximum fill factor in the array.
摘要翻译：位于相应测辐射热计之下的支撑臂悬置在基板上的一系列测辐射热表，以允许阵列中的最大填充系数。

4. 发明授权

US5789753A Stress tolerant bolometer 失效
标题翻译：耐压测辐射热计
公开(公告)号：US5789753A
公开(公告)日：1998-08-04
申请号：US684367
申请日：1996-07-19
申请人： Roland W. Gooch , Mark V. Wadsworth
发明人： Roland W. Gooch , Mark V. Wadsworth
IPC分类号： G01J5/20 , G01J5/22 , G01K17/00 , H04N3/15 , H04N5/33
CPC分类号： G01J5/20 , G01J5/22 , G01K17/003 , H04N3/155 , H04N5/33 , H01L2224/48091 , H01L2924/13091 , H01L2924/19107
摘要： Bolometer array with active bolometers suspended over a substrate and a periphery of dummy bolometers making contact with the substrate, this allows bolometer formation under stress conditions.
摘要翻译：具有主动测辐射热计的悬臂测深仪阵列悬挂在基板上，并且虚拟测辐射热器的周边与基板接触，这使得在应力条件下形成测辐射热计。

5. 发明授权

US06576899B2 Direct detection of low-energy charged particles using metal oxide semiconductor circuitry 有权
公开(公告)号：US06576899B2
公开(公告)日：2003-06-10
申请号：US09683509
申请日：2002-01-10
申请人： Mahadeva P. Sinha , Mark V. Wadsworth
发明人： Mahadeva P. Sinha , Mark V. Wadsworth
IPC分类号： H01J37244
CPC分类号： H01J49/025
摘要： An electronic ion detection system which may detect low-energy charge particles such as ions from, for example, a mass spectrometer system. The capacitive sensors are located with two plates which are separated by an insulator. The ions which impinge on one of the plates cause charge to be created. That charge may be amplified and then handled by a charge mode amplifier such as a CCD sensor. That CCD sensor may operate using fill and spill operations.

6. 发明授权

US5274263A FET structure for use in narrow bandgap semiconductors 失效
标题翻译：用于窄带隙半导体的FET结构
公开(公告)号：US5274263A
公开(公告)日：1993-12-28
申请号：US647373
申请日：1991-01-28
申请人： Mark V. Wadsworth
发明人： Mark V. Wadsworth
IPC分类号： H01L21/34 , H01L21/8254 , H01L27/148 , H01L29/22 , H01L29/78 , H01L21/265
CPC分类号： H01L29/66969 , H01L21/8254 , H01L27/14875 , H01L29/22 , H01L29/78
摘要： A FET structure for use in narrow bandgap semiconductors comprising a narrow bandgap semiconductor substrate 24, an implanted source region 12 of a conductivity type opposite that of the substrate 24, an implanted drain region 12 of the same conductivity type as source region 12 and spaced from source region 12, a first diode guard ring 14 insulatively disposed on the substrate 24 and surrounding source region 12, a second diode guard ring 14 insulatively disposed on the substrate 24 and surrounding drain region 12, a gate region 16 insulatively disposed on the substrate 24 and surrounding the source and drain regions 12 and the first and second diode guard rings 14, an outer periphery transistor guard ring 18 insulatively disposed on the substrate 24 and surrounding the gate region 16 and a field plate region 20 insulatively disposed on the substrate 24 and surrounding the outer periphery transistor guard ring 18.Other devices, systems and methods are also disclosed.
摘要翻译：用于窄带隙半导体的FET结构，包括窄带隙半导体衬底24，与衬底24相反的导电类型的注入源区12，与源区12相同的导电类型的注入漏区12，源极区域12，绝缘地设置在衬底24上并围绕源极区域12的第一二极管保护环14，绝缘地设置在衬底24和围绕漏极区域12上的第二二极管保护环14，绝缘地设置在衬底24上的栅极区域16 并围绕源极和漏极区域12以及第一和第二二极管保护环14，绝缘地设置在基板24上并围绕栅极区域16的外围晶体管保护环18以及绝缘地设置在基板24上的场板区域20，以及围绕外周边晶体管保护环18.还公开了其他装置，系统和方法。

7. 发明授权

US6028312A Electronic chopping 失效
标题翻译：电子斩波
公开(公告)号：US6028312A
公开(公告)日：2000-02-22
申请号：US684654
申请日：1996-07-19
申请人： Mark V. Wadsworth , William L. McCardel
发明人： Mark V. Wadsworth , William L. McCardel
IPC分类号： G01J5/24 , H04N5/33 , H04N5/365
CPC分类号： H04N5/365 , G01J5/24 , H04N5/33
摘要： A sensor with radiation detectors with two or more photoconductor elements and bias polarity switching of one element to emulate mechanical chopping of input radiation. This electronic chopping permits higher chopping frequencies than mechanical chopping for bolometers because the scene settling time does not limit electronic chopping. The detectors may be within a single vacuum integrated circuit package with separate narrow passband filters for chemical spectral analysis.
摘要翻译：具有两个或多个光电导体元件的辐射探测器的传感器和一个元件的偏置极性切换以模拟输入辐射的机械斩波。这种电子斩波允许比用于测辐射热计的机械斩波更高的斩波频率，因为场景建立时间不限制电子斩波。检测器可以在具有用于化学光谱分析的单独的窄带通滤波器的单个真空集成电路封装内。

8. 发明授权

US5777329A Bolometer array spectrometer 失效
标题翻译：分光光度计阵列光谱仪
公开(公告)号：US5777329A
公开(公告)日：1998-07-07
申请号：US683997
申请日：1996-07-19
申请人： Glenn H. Westphal , Mark V. Wadsworth
发明人： Glenn H. Westphal , Mark V. Wadsworth
IPC分类号： G01J3/26 , G01J5/20
CPC分类号： G01J5/20 , G01J3/26
摘要： A spectrometer (2500) including a detector integrated circuit (2501) which includes a linear array (2503) of 128 adjoining 2 by 10 superpixel bolometers in a package base (2530) and under an infrared transparent lid (2510) with a graded interference filter (2511). Filter (2511) has a rectangular shape and is a passband filter with a center wavelength which varies linearly along the direction of the long sides which is also the long direction of the linear array (2503) of bolometers. The center wavelength varies by a factor of about 2 over the length of the linear array (2503).
摘要翻译：一种包括检测器集成电路（2501）的光谱仪（2500），其包括在封装基座（2530）中并且具有渐变干涉滤光器（2510）的红外透明盖（2510）下方的128个相邻的2×10个超像素辐射热计的线性阵列（2503）（2511）。滤光器（2511）具有矩形形状，并且是具有中心波长的通带滤光器，该中心波长沿长边方向线性变化，长边方向也是测辐射热计线性阵列（2503）的长方向。中心波长在线性阵列（2503）的长度上变化约2倍。

9. 发明授权

US6130634A Resistor string DAC with improved speed 有权
标题翻译：电阻串DAC，速度提高
公开(公告)号：US6130634A
公开(公告)日：2000-10-10
申请号：US219173
申请日：1998-12-22
申请人： Mark V. Wadsworth , Kirk D. Peterson
发明人： Mark V. Wadsworth , Kirk D. Peterson
IPC分类号： H03M1/76 , H03M1/66 , H03M1/78
CPC分类号： H03M1/765
摘要： The speed performance of a resistive DAC can be improved by tailoring the selection switch size to the node location. For the simple case of a DAC used in a SAR-based ADC, the MSB code, which is activated during each SAR search, is the speed-limiting bit. Increasing the size of the switch on the node corresponding to the MSB will reduce the on-resistance of the FET and, therefore, the total resistance to ground from the node. The on-resistance can be changed markedly without substantially changing the total capacitance at the output node, since the sum of the parasitic from the remaining switches will far exceed the additional capacitance created by increasing the MSB FET.
摘要翻译：可以通过将选择开关尺寸调整到节点位置来提高阻性DAC的速度性能。对于在基于SAR的ADC中使用的DAC的简单情况，在每次SAR搜索期间激活的MSB代码是速度限制位。增加对应于MSB的节点上的开关的尺寸将减小FET的导通电阻，并因此降低对节点的总接地阻抗。导通电阻可以显着改变，而不会实质上改变输出节点处的总电容，因为来自剩余开关的寄生的总和将远远超过通过增加MSB FET而产生的附加电容。

10. 发明授权

US6064066A Bolometer autocalibration 失效
标题翻译：分流计自动校准
公开(公告)号：US6064066A
公开(公告)日：2000-05-16
申请号：US684122
申请日：1996-07-19
申请人： Malcolm J. Bevan , William L. McCardel , Mark V. Wadsworth , Glenn H. Westphal
发明人： Malcolm J. Bevan , William L. McCardel , Mark V. Wadsworth , Glenn H. Westphal
IPC分类号： G01J5/20 , H01L27/14
CPC分类号： G01J5/20
摘要： A sensor (1400) with radiation detectors (1421-1422) with two or more bolometer or photoconductor elements and bias polarity switching of one element to emulate mechanical chopping of input radiation. This electronic chopping permits higher chopping frequencies than mechanical chopping for bolometers because the scene settling time does not limit electronic chopping. The detectors may be within a single vacuum integrated circuit package with separate narrow passband filters for chemical spectral analysis.
摘要翻译：具有辐射检测器（1421-1422）的传感器（1421）具有两个或更多个测辐射热计或光电导体元件，并且一个元件的偏置极性切换以模拟输入辐射的机械斩波。这种电子斩波允许比用于测辐射热计的机械斩波更高的斩波频率，因为场景建立时间不限制电子斩波。检测器可以在具有用于化学光谱分析的单独的窄带通滤波器的单个真空集成电路封装内。

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