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1. 发明授权

US4364075A CMOS Dynamic RAM cell and method of fabrication 失效
标题翻译： CMOS动态RAM单元及其制造方法
公开(公告)号：US4364075A
公开(公告)日：1982-12-14
申请号：US182870
申请日：1980-09-02
申请人： Mark T. Bohr , Kenneth K. Yu , Ronald J. C. Chwang , Neil C. Berglund
发明人： Mark T. Bohr , Kenneth K. Yu , Ronald J. C. Chwang , Neil C. Berglund
IPC分类号： G11C11/401 , G11C5/00 , G11C11/404 , H01L21/822 , H01L21/8242 , H01L23/556 , H01L27/04 , H01L27/10 , H01L27/108 , H01L29/78 , H01L27/02
CPC分类号： H01L27/10805 , G11C11/404 , G11C5/005 , H01L23/556 , H01L2924/0002
摘要： A high density CMOS dynamic RAM cell comprising a transistor and capacitance means formed in an n-well is disclosed. The capacitance means includes a polysilicon plate member disposed above a p-type region formed in the n-well. A buried contact, extending from the plate member, pierces the p-type region and contacts the well. In addition to the capacitance associated with the plate member, p-type region and well, capacitance is obtained between the side walls of the n-type regions and p-type regions.
摘要翻译：公开了一种包括形成在n阱中的晶体管和电容装置的高密度CMOS动态RAM单元。电容装置包括设置在形成在n阱中的p型区域上方的多晶硅板构件。从板构件延伸的埋入触头刺穿p型区域并与阱接触。除了与板构件，p型区域和阱相关联的电容之外，在n型区域和p型区域的侧壁之间获得电容。

2. 发明授权

US4409259A MOS Dynamic RAM cell and method of fabrication 失效
标题翻译： MOS动态RAM单元及其制造方法
公开(公告)号：US4409259A
公开(公告)日：1983-10-11
申请号：US403116
申请日：1982-07-29
申请人： Mark T. Bohr , Kenneth K. Yu , Ronald J. C. Chwang , C. Neil Berglund
发明人： Mark T. Bohr , Kenneth K. Yu , Ronald J. C. Chwang , C. Neil Berglund
IPC分类号： G11C5/00 , G11C11/404 , H01L23/556 , H01L27/108 , H01L29/78 , B05D5/12 , H01L27/02
CPC分类号： H01L27/10805 , G11C11/404 , G11C5/005 , H01L23/556 , H01L2924/0002
摘要： A high density CMOS dynamic RAM cell comprising a transistor and capacitance means formed in an n-well is disclosed. The capacitance means includes a polysilicon plate member disposed above a p-type region formed in the n-well. A buried contact, extending from the plate member, pierces the p-type region and contacts the well. In addition to the capacitance associated with the plate member, p-type region and well, capacitance is obtained between the side walls of the n-type regions and p-type regions.
摘要翻译：公开了一种包括形成在n阱中的晶体管和电容装置的高密度CMOS动态RAM单元。电容装置包括设置在形成在n阱中的p型区域上方的多晶硅板构件。从板构件延伸的埋入触头刺穿p型区域并与阱接触。除了与板构件，p型区域和阱相关联的电容之外，在n型区域和p型区域的侧壁之间获得电容。

3. 发明授权

US4282648A CMOS process 失效
标题翻译： CMOS工艺
公开(公告)号：US4282648A
公开(公告)日：1981-08-11
申请号：US133580
申请日：1980-03-24
申请人： Kenneth K. Yu , Mark T. Bohr , Mark B. Seidenfeld
发明人： Kenneth K. Yu , Mark T. Bohr , Mark B. Seidenfeld
IPC分类号： H01L27/08 , H01L21/225 , H01L21/336 , H01L21/74 , H01L21/76 , H01L21/762 , H01L21/8238 , H01L27/092 , H01L29/06 , H01L29/78 , H01L21/22
CPC分类号： H01L21/823878 , H01L21/2253 , H01L21/743 , H01L21/76218 , H01L29/0638 , Y10S148/053 , Y10S148/07 , Y10S148/117
摘要： A CMOS Process for fabricating channel stops which are substantially formed as a by-product of growing a field oxide is described. A p-type region is formed at an edge (or edges) of an n-type well through an opening in a silicon nitride layer. An oxide is grown at the opening. As the oxide grows, n-type dopant from the n-type well accumulates at the edge of the oxide, forming a more highly doped n-type region. Simultaneously, an adjacent p-type region is formed under the oxide from the p-type dopant. The process also permits easy fabrication of a buried contact to the p-channel device thus eliminating the need for a metal contact when forming a bistable circuit.
摘要翻译：描述了用于制造基本上形成为生长场氧化物的副产品的通道停止件的CMOS工艺。 p型区域形成在n型阱的边缘（或边缘）中，穿过氮化硅层中的开口。在开口处生长氧化物。随着氧化物生长，来自n型阱的n型掺杂剂在氧化物的边缘积聚，形成更高掺杂的n型区域。同时，在p型掺杂剂的氧化物之下形成相邻的p型区域。该工艺还允许容易地制造到p沟道器件的掩埋接触，从而在形成双稳态电路时不需要金属接触。

4. 发明授权

US5086477A Automated system for extracting design and layout information from an integrated circuit 失效
标题翻译：用于从集成电路中提取设计和布局信息的自动化系统
公开(公告)号：US5086477A
公开(公告)日：1992-02-04
申请号：US564175
申请日：1990-08-07
申请人： Kenneth K. Yu , C. Neil Berglund
发明人： Kenneth K. Yu , C. Neil Berglund
IPC分类号： G06F17/50 , G06K9/00 , H01L27/02
CPC分类号： G06K9/00 , G06F17/5068 , H01L27/0203
摘要： A system for extracting design information from a semiconductor integrated circuit (IC) is disclosed. The system includes a microscope and camera for capturing a composite image of the IC in the form of a video signal. Image capture occurs on a section-by-section basis in which a "snapshot" of each section is taken, the die-holding table stepped to a new section, and a snapshot of the new section obtained. This image capture operation continues until a composite image of the IC is obtained by successive capture of contiguous or partially overlapping images covering all of the different sections of the die. An image processor receives the video signal from the optical means and generates an abstract representation of the die in the form of lists of identifying features such as the size, type and relative location of all transistors, and the width, length and relative location of all of the metal interconnects to the IC. These lists are subsequently compared with reference library circuits by a computer to recognize individual circuit cells. Once all of the ciruit cells on the die have been recognized, the computer then generates a schematic netlist of the IC.
摘要翻译：公开了一种从半导体集成电路（IC）提取设计信息的系统。该系统包括用于以视频信号的形式捕获IC的合成图像的显微镜和相机。图像捕获发生在逐个部分的基础上，其中采取每个部分的“快照”，模具保持表步进新的部分，并获取新部分的快照。该图像捕获操作继续进行，直到通过连续捕获覆盖芯片的所有不同部分的连续或部分重叠的图像来获得IC的合成图像。图像处理器从光学装置接收视频信号，并以所有晶体管的尺寸，类型和相对位置以及所有晶体管的宽度，长度和相对位置等识别特征的列表的形式产生裸片的抽象表示的金属互连到IC。这些列表随后通过计算机与参考库电路进行比较以识别各个电路单元。一旦芯片上的所有电路单元已被识别，计算机然后生成IC的示意网表。

5. 发明申请

US20090292599A1 TRANSACTIONAL ADVERTISING 审中-公开
标题翻译：交易广告
公开(公告)号：US20090292599A1
公开(公告)日：2009-11-26
申请号：US12430656
申请日：2009-04-27
申请人： Alastair Rampell , Alexander E. Campbell , Terry Angelos , Kenneth K. Yu
发明人： Alastair Rampell , Alexander E. Campbell , Terry Angelos , Kenneth K. Yu
IPC分类号： G06Q30/00
CPC分类号： G06Q30/02 , G06Q30/0211 , G06Q30/0222 , G06Q30/0275 , G06Q30/08
摘要： A method of transactional advertising includes providing a transactional advertising platform for presenting offers to a user who is committed to complete an electronic transaction; selecting an offer to present based on at least two of the following associated with the transaction: a transaction amount, a payment type, a shipment address, and a shopping cart contents; and presenting the offer to the user based on a user level of commitment to complete the electronic transaction and based on the status of the transaction. The user level of commitment includes one of an indication of non-payment, an indication of payment, and an indication of indecision to pay. The transaction status includes one of needs incentive to transact, method of payment provided, payment approved, and payment complete.
摘要翻译：一种交易广告的方法包括提供一种交易广告平台，用于向承诺完成电子交易的用户呈现提供; 基于与所述交易相关联的以下至少两个来选择要呈现的报价：交易金额，支付类型，装运地址和购物车内容; 并且基于用户完成电子交易的承诺级别并基于交易的状态向用户呈现该提议。用户承诺级别包括不付款的指示，付款的指示以及要付款的犹豫不决的指示。交易状态包括需要交易的激励，提供的付款方式，付款批准和付款完成。

6. 发明授权

US4440979A Current sink for DPT channel unit 失效
标题翻译： DPT通道单元的电流吸收器
公开(公告)号：US4440979A
公开(公告)日：1984-04-03
申请号：US373814
申请日：1982-05-03
申请人： Gregor D. McGibbon , Kenneth K. Yu
发明人： Gregor D. McGibbon , Kenneth K. Yu
IPC分类号： H04M7/00 , H04M7/06 , H04Q1/38
CPC分类号： H04M7/0096 , H04Q1/38
摘要： DC Saturation effects in the VF transformer of a DPT are reduced or eliminated with apparatus diverting cental office battery loop current away from windings of the transformer when a trunk circuit is seized for an off-hook condition of a calling parties telephone handset. A physically smaller transformer having increased inductance may then be employed for providing increased return loss at low frequencies. The apparatus comprises a current amplifier that is electrically connected across tip and ring lines, with a first switch means in its feedback path, and second switch means for AC coupling a transformer winding to the lines. When the trunk is idle for an on-hook condition of the handset, the amplifier is disabled and the lines are terminated with a large resistance. When the trunk is seized for an off-hook condition of the handset, binary PF and CF signals cause the current amplifier to shunt the resistor and to draw a prescribed amount of DC loop current on the lines for energizing a central office A-relay. This also turns on the second switch means for passing VF signals on the lines to and from the transformer, while blocking DC current from the winding, and terminating the lines with a prescribed impedance. When the calling party is dialing, the CF signal opens the feedback path so that the amplifier is turned hard on and off by pulsing of the PF signal for changing the termination impedance and causing resistive pulsing in the central office.
摘要翻译： DC在DPT的VF变压器中的饱和效应被降低或消除，当中继电路被抢占主叫方电话听筒的摘机状态时，设备将中心办公室电池回路电流远离变压器的绕组。可以采用具有增加的电感的物理上较小的变压器来在低频下提供增加的回波损耗。该装置包括电流放大器，其在尖端和环形线路之间电连接，其反馈路径中的第一开关装置和用于将变压器绕组交流耦合到线路的第二开关装置。当主干空闲时，手机的挂机状态，放大器被禁用，线路以大电阻终止。当主干被抓取到手机的摘机状态时，二进制PF和CF信号使得电流放大器分流电阻器，并在线路上引出规定数量的直流回路电流，以激励中心局A继电器。这也导通第二开关装置，用于使来自变压器的线路上的VF信号通过，同时阻断来自绕组的DC电流，并以规定的阻抗终止线路。当主叫方正在拨号时，CF信号打开反馈路径，通过脉冲PF信号来改变终端阻抗并引起中心局的电阻脉冲，使放大器变硬。

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