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    • 1. 发明授权
    • One-time programmable latch which allows volatile writes prior to
permanent programming
    • 一次性可编程锁存器,允许永久编程之前的易失性写入
    • US5856941A
    • 1999-01-05
    • US929457
    • 1997-09-15
    • Mark Russell KeyseGregory Jon ManlovePedro E. Castillo-BorellySeyed Ramezan Zarabadi
    • Mark Russell KeyseGregory Jon ManlovePedro E. Castillo-BorellySeyed Ramezan Zarabadi
    • G11C16/04G11C11/00
    • G11C16/0441
    • A cross-coupled latch circuit that is a one-time programmable latch that allows volatile temporary writes to the latch prior to permanent programming of the latch. The latch circuit includes first and second programmable FET devices that include poly-poly capacitators in series with the gate terminal of each device. A pair of PMOS FET devices combine with the programmable devices to make up the latch. The latch circuit includes other FET devices that are switched on and off depending on whether the latch is being permanently programmed, temporarily written to, or reset. A NAND gate is provided such that a logical high output on the NAND gate allows the first programmable device to be temporarily programmed with a logical one and permanently programmed with a logical zero. A NOR gate is provided such that a logical high on the NOR gate allows the second programmable device to be temporarily programmed with a logical zero and permanently programmed with a logical one.
    • 交叉耦合锁存电路,其是在锁存器的永久编程之前允许对锁存器的易失性临时写入的一次性可编程锁存器。 锁存电路包括第一和第二可编程FET器件,其包括与每个器件的栅极端子串联的多晶硅电容器。 一对PMOS FET器件与可编程器件组合构成锁存器。 锁存电路包括根据锁存器是被永久编程,临时写入还是复位而导通和关断的其他FET器件。 提供NAND门,使得NAND门上的逻辑高输出允许第一可编程器件以逻辑1临时编程并且用逻辑零永久编程。 NOR门被提供,使得NOR门上的逻辑高电平允许第二可编程器件被临时编程为逻辑0并且用逻辑0永久编程。
    • 2. 发明授权
    • Method and apparatus for testing an infrared sensor
    • 用于测试红外传感器的方法和装置
    • US07119326B2
    • 2006-10-10
    • US10905151
    • 2004-12-17
    • James H. LogsdonPedro E. Castillo-BorellyAbhijeet V. ChavanMichael P. DonahueDeron K. Slaughter
    • James H. LogsdonPedro E. Castillo-BorellyAbhijeet V. ChavanMichael P. DonahueDeron K. Slaughter
    • G01D18/00G12B13/00
    • G01J5/12
    • A method and apparatus for evaluating the functionality and sensitivity of an infrared sensor to infrared radiation. The method and apparatus are adapted for testing an infrared sensor having a diaphragm containing a heating element and a transducer that generates an output responsive to temperature. The method entails placing the infrared sensor in a controlled environment, and then exposing the diaphragm of the sensor to different levels of thermal radiation so as to obtain outputs of the transducer at different output levels. In the absence of exposure of the diaphragm to thermal radiation, flowing current through the heating element at different input levels so that the output of the transducer returns to the different output levels obtained using thermal radiation, the input difference between the input levels can be computed and used to assess the functionality and the sensitivity of the sensor.
    • 一种用于评估红外传感器对红外辐射的功能和灵敏度的方法和装置。 该方法和装置适于测试具有包含加热元件的振动膜和产生响应于温度的输出的换能器的红外传感器。 该方法需要将红外传感器放置在受控的环境中,然后将传感器的膜片暴露于不同的热辐射水平,以便获得不同输出电平的换能器的输出。 在没有将隔膜暴露于热辐射的情况下,流过不同输入电平的加热元件的电流,使得换能器的输出返回到使用热辐射获得的不同输出电平,可以计算输入电平之间的输入差 并用于评估传感器的功能和灵敏度。
    • 3. 发明授权
    • Electrostatic discharge protection device
    • 静电放电保护装置
    • US07335954B2
    • 2008-02-26
    • US11110315
    • 2005-04-20
    • Jack L. GlennPedro E. Castillo-Borelly
    • Jack L. GlennPedro E. Castillo-Borelly
    • H01L23/62
    • H01L29/87H01L27/0262H01L29/0626H01L29/8611
    • An electrostatic discharge (ESD) protection device includes a first-type substrate, a second-type well formed in the substrate and a first-type well formed in the substrate. The second-type well includes a second-type+ region formed between first and second first-type+ regions. The first-type well is formed in the substrate adjacent a first side of the second-type well. The first-type well includes first and second first-type regions with a first-type+ region and a second-type+ region formed between the first and second first-type regions. The second-type+ region of the first-type well is formed between the first-type+ region of the first-type well and the second-type well.
    • 静电放电(ESD)保护装置包括第一型衬底,在衬底中形成的第二类阱和在衬底中形成的第一类阱。 第二类阱包括在第一和第二第一类型+区域之间形成的第二类型+区域。 第一类型的阱在与第二类型阱的第一侧相邻的衬底中形成。 第一类阱包括在第一和第二第一类型区域之间形成第一和第二第一类型的区域,其具有第一类型+区域和第二类型+区域。 第一型阱的第二型+区形成在第一型阱的第一型+区与第二型阱之间。
    • 4. 发明授权
    • P-N junction based thermal detector
    • 基于P-N结的热探测器
    • US07785002B2
    • 2010-08-31
    • US11633976
    • 2006-12-05
    • Brian E. DewesPedro E. Castillo-Borelly
    • Brian E. DewesPedro E. Castillo-Borelly
    • G01K7/02G01J5/12
    • G01K7/028G01J5/12
    • A thermopile-based thermal detector is provided by a thermocouple, formed from a single sheet of material, which is made dissimilar with a P-doped and an N-doped junction electrically isolated via a naturally forming depletion region. The thermopile P-N sheet is uniform and planar, addressing stress and manufacturing issues. The usual non-active area of a conventional thermopile is significantly reduced or eliminated, and thus the output signal per unit diaphragm area of the detector is substantially increased, without the typical reduction in the signal-to-noise ratio. Also, a significant reduction in size of the thermal detector area is provided without a reduction in signal or signal-to-noise ratio. In an aspect, a second layer of thermocouples is axially positioned over, and connected with, a first layer of thermocouples. Additional axially stacked thermopiles can be provided within the same fabrication process. Signal processing circuitry may be electrically interconnected with the thermocouple.
    • 基于热电堆的热检测器由热电偶提供,该热电偶由单片材料形成,其与通过自然形成的耗尽区电隔离的P掺杂和N掺杂结不同。 热电堆P-N片材是均匀平坦的,解决了应力和制造问题。 常规热电堆的常用非有源区域显着减少或消除,因此检测器的每单位膜片面积的输出信号基本上增加,而信噪比的典型降低。 此外,提供热检测器区域的尺寸的显着减小,而不会降低信号或信噪比。 在一个方面,第二层热电偶被轴向地定位在第一层热电偶的上方并与第一层热电偶连接。 可以在相同的制造过程中提供另外的轴向堆叠的热电堆。 信号处理电路可以与热电偶电互连。
    • 5. 发明申请
    • P-N junction based thermal detector
    • 基于P-N结的热探测器
    • US20080130710A1
    • 2008-06-05
    • US11633976
    • 2006-12-05
    • Brian E. DewesPedro E. Castillo-Borelly
    • Brian E. DewesPedro E. Castillo-Borelly
    • G01K7/02H01L21/00
    • G01K7/028G01J5/12
    • A thermopile-based thermal detector is provided by a thermocouple, formed from a single sheet of material, which is made dissimilar with a P-doped and an N-doped junction electrically isolated via a naturally forming depletion region. The thermopile P-N sheet is uniform and planar, addressing stress and manufacturing issues. The usual non-active area of a conventional thermopile is significantly reduced or eliminated, and thus the output signal per unit diaphragm area of the detector is substantially increased, without the typical reduction in the signal-to-noise ratio. Also, a significant reduction in size of the thermal detector area is provided without a reduction in signal or signal-to-noise ratio. In an aspect, a second layer of thermocouples is axially positioned over, and connected with, a first layer of thermocouples. Additional axially stacked thermopiles can be provided within the same fabrication process. Signal processing circuitry may be electrically interconnected with the thermocouple.
    • 基于热电堆的热检测器由热电偶提供,该热电偶由单片材料形成,其与通过自然形成的耗尽区电隔离的P掺杂和N掺杂结不同。 热电堆P-N片材是均匀平坦的,解决了应力和制造问题。 常规热电堆的常用非有源区域显着减少或消除,因此检测器的每单位膜片面积的输出信号基本上增加,而信噪比的典型降低。 此外,提供热检测器区域的尺寸的显着减小,而不会降低信号或信噪比。 在一个方面,第二层热电偶被轴向地定位在第一层热电偶的上方并与第一层热电偶连接。 可以在相同的制造过程中提供另外的轴向堆叠的热电堆。 信号处理电路可以与热电偶电互连。