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1. 发明申请

US20080007267A1 Electrostatic thin film chemical and biological sensor 有权
标题翻译：静电薄膜化学和生物传感器
公开(公告)号：US20080007267A1
公开(公告)日：2008-01-10
申请号：US11639405
申请日：2006-12-13
申请人： Mark Prelas , Tushar Ghosh , Robert Tompson , Dabir Viswanath , Sudarshan Loyalka
发明人： Mark Prelas , Tushar Ghosh , Robert Tompson , Dabir Viswanath , Sudarshan Loyalka
IPC分类号： G01N27/60
CPC分类号： G01N27/60
摘要： A chemical and biological agent sensor includes an electrostatic thin film supported by a substrate. The film includes an electrostatic charged surface to attract predetermined biological and chemical agents of interest. A charge collector associated with said electrostatic thin film collects charge associated with surface defects in the electrostatic film induced by the predetermined biological and chemical agents of interest. A preferred sensing system includes a charge based deep level transient spectroscopy system to read out charges from the film and match responses to data sets regarding the agents of interest. A method for sensing biological and chemical agents includes providing a thin sensing film having a predetermined electrostatic charge. The film is exposed to an environment suspected of containing the biological and chemical agents. Quantum surface effects on the film are measured. Biological and/or chemical agents can be detected, identified and quantified based on the measured quantum surface effects.
摘要翻译：化学和生物剂传感器包括由基底支撑的静电薄膜。该膜包括静电带电表面以吸引预期的感兴趣的生物和化学试剂。与所述静电薄膜相关联的电荷收集器收集与由感兴趣的预定生物和化学试剂引起的静电膜中的表面缺陷相关的电荷。优选的感测系统包括基于电荷的深度级瞬态光谱系统，用于从电影中读出费用，并且将关于感兴趣的代理的数据集的响应匹配。用于感测生物和化学试剂的方法包括提供具有预定静电荷的薄的感测膜。该片暴露于怀疑含有生物和化学物质的环境。测量膜上的量子表面效应。可以基于测量的量子表面效应来检测，鉴定和定量生物和/或化学试剂。

2. 发明授权

US06632768B2 Adsorbent for HC in exhaust gas, and process for producing the same 失效
标题翻译：排气中HC吸附剂及其制造方法
公开(公告)号：US06632768B2
公开(公告)日：2003-10-14
申请号：US09803135
申请日：2001-03-12
申请人： Sudarshan Loyalka , Tushar Ghosh , Robert V. Tompson, Jr. , George Vosnidis , Gregory A. Holscher , Hiroshi Ogasa , Tetsuo Endo
发明人： Sudarshan Loyalka , Tushar Ghosh , Robert V. Tompson, Jr. , George Vosnidis , Gregory A. Holscher , Hiroshi Ogasa , Tetsuo Endo
IPC分类号： B01J2906
CPC分类号： B01J20/2803 , B01D53/944 , B01J20/10 , B01J20/183 , B01J20/28004 , B01J20/28014 , B01J20/28016 , B01J20/28078 , B01J20/28095 , B01J20/3028 , B01J20/3204 , B01J20/3234 , B01J20/3236 , B01J20/3293 , B01J20/3408 , B01J20/3433 , B01J20/3483 , F01N3/0835 , Y02T10/20
摘要： An adsorbent for HC in an exhaust gas is an agglomerate of double-structure particles, each of which includes an HC-adsorbing zeolite core, and a ceramic coat wrapping the zeolite core and having a plurality of through-pores communicating with a plurality of pores in the zeolite core. Each of the double-structure particles is at least one of a double-structure particle including the zeolite core comprising a single zeolite particle, and a double-structure particle including the zeolite core comprising a plurality of zeolite particles. Each of the through-pores in the ceramic coat has such a shape that the HC is easy to flow into the through-pore and difficult to flow out of the through-pore.
摘要翻译：用于排气中的HC的吸附剂是双结构颗粒的附聚物，其中每个都包含HC-吸附的沸石核心，以及包裹沸石核心的陶瓷涂层，并且具有与多个孔连通的多个通孔在沸石核心中。每个双结构颗粒是包括包含单个沸石颗粒的沸石核心的双结构颗粒和包含多个沸石颗粒的沸石核心的双结构颗粒中的至少一种。陶瓷涂层中的每个通孔具有HC易于流入通孔并且难以流出通孔的形状。

3. 发明授权

US08394711B2 Systems and methods for co-doping wide band gap materials 有权
标题翻译：共掺杂宽带材料的系统和方法
公开(公告)号：US08394711B2
公开(公告)日：2013-03-12
申请号：US13154000
申请日：2011-06-06
申请人： Mark A. Prelas , Tushar K. Ghos , Robert V. Tompson, Jr. , Dabir S. Viswanath , Sudarshan Loyalka
发明人： Mark A. Prelas , Tushar K. Ghos , Robert V. Tompson, Jr. , Dabir S. Viswanath , Sudarshan Loyalka
IPC分类号： H01L21/22
CPC分类号： C09K11/64 , H01L21/041 , H01L21/0455 , H01L21/221 , H01L21/2215 , H01L21/2225 , H01L21/268 , H01L21/326 , H01L29/1602 , H01L29/1608 , H01L29/2003 , H01L33/0062 , H01L33/325 , H01L2924/0002 , H01L2924/00
摘要： Various embodiments of the present disclosure provide a method of simultaneously co-doping a wide band gap material with p-type and n-type impurities to create a p-n junction within the resulting wide band gap composite material. The method includes disposing a sample comprising a dopant including both p-type and n-type impurities between a pair of wide band gap material films and disposing the sample between a pair of opposing electrodes; and subjecting the sample to a preselected vacuum; and heating the sample to a preselected temperature; and applying a preselected voltage across the sample; and subjecting the sample to at least one laser beam having a preselected intensity and a preselected wavelength, such that the p-type and n-type impurities of the dopant substantially simultaneously diffuse into the wide band gap material films resulting in a wide band gap compound material comprising a p-n junction.
摘要翻译：本公开的各种实施例提供了一种同时将宽带隙材料与p型和n型杂质共掺杂以在所得宽带隙复合材料内产生p-n结的方法。该方法包括将包括p型和n型杂质的掺杂剂的样品设置在一对宽带隙材料膜之间并将样品设置在一对相对的电极之间; 并对样品进行预选的真空; 并将样品加热至预选温度; 并在样品上施加预选电压; 并且对样品进行至少一种具有预选强度和预选波长的激光束，使得掺杂剂的p型和n型杂质基本上同时扩散到宽带隙材料膜中，导致宽带隙化合物包含pn结的材料。

4. 发明申请

US20110237057A1 SYSTEMS AND METHODS FOR CO-DOPING WIDE BAND GAP MATERIALS 有权
标题翻译：用于同时切割宽带材料的系统和方法
公开(公告)号：US20110237057A1
公开(公告)日：2011-09-29
申请号：US13154000
申请日：2011-06-06
申请人： Mark A. Prelas , Tushar K. Ghos , Robert V. Tompson, JR. , Dabir S. Viswanath , Sudarshan Loyalka
发明人： Mark A. Prelas , Tushar K. Ghos , Robert V. Tompson, JR. , Dabir S. Viswanath , Sudarshan Loyalka
IPC分类号： H01L21/265
CPC分类号： C09K11/64 , H01L21/041 , H01L21/0455 , H01L21/221 , H01L21/2215 , H01L21/2225 , H01L21/268 , H01L21/326 , H01L29/1602 , H01L29/1608 , H01L29/2003 , H01L33/0062 , H01L33/325 , H01L2924/0002 , H01L2924/00
摘要： Various embodiments of the present disclosure provide a method of simultaneously co-doping a wide band gap material with p-type and n-type impurities to create a p-n junction within the resulting wide band gap composite material. The method includes disposing a sample comprising a dopant including both p-type and n-type impurities between a pair of wide band gap material films and disposing the sample between a pair of opposing electrodes; and subjecting the sample to a preselected vacuum; and heating the sample to a preselected temperature; and applying a preselected voltage across the sample; and subjecting the sample to at least one laser beam having a preselected intensity and a preselected wavelength, such that the p-type and n-type impurities of the dopant substantially simultaneously diffuse into the wide band gap material films resulting in a wide band gap compound material comprising a p-n junction.
摘要翻译：本公开的各种实施例提供了一种同时将宽带隙材料与p型和n型杂质共掺杂以在所得宽带隙复合材料内产生p-n结的方法。该方法包括将包括p型和n型杂质的掺杂剂的样品设置在一对宽带隙材料膜之间并将样品设置在一对相对的电极之间; 并对样品进行预选的真空; 并将样品加热至预选温度; 并在样品上施加预选电压; 并且对样品进行至少一种具有预选强度和预选波长的激光束，使得掺杂剂的p型和n型杂质基本上同时扩散到宽带隙材料膜中，导致宽带隙化合物包含pn结的材料。

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