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1. 发明授权

US08492185B1 Large area nonpolar or semipolar gallium and nitrogen containing substrate and resulting devices 有权
标题翻译：大面积的非极性或半极性的含镓和氮的衬底和所产生的器件
公开(公告)号：US08492185B1
公开(公告)日：2013-07-23
申请号：US13548931
申请日：2012-07-13
申请人： Mark P. D'Evelyn , James Speck , William Houck , Mathew Schmidt , Arpan Chakraborty
发明人： Mark P. D'Evelyn , James Speck , William Houck , Mathew Schmidt , Arpan Chakraborty
IPC分类号： H01L21/00
CPC分类号： H01L21/02395 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/02642 , H01L21/02647 , H01L33/0075
摘要： A method for fabricating large-area nonpolar or semipolar GaN wafers with high quality, low stacking fault density, and relatively low dislocation density is described. The wafers are useful as seed crystals for subsequent bulk growth or as substrates for LEDs and laser diodes.
摘要翻译：描述了制造具有高质量，低堆垛层错密度和相对低的位错密度的大面积非极性或半极性GaN晶片的方法。晶圆可用作后续体积生长的晶种，也可用作LED和激光二极管的基板。

2. 发明申请

US20120187412A1 Gallium-Nitride-on-Handle Substrate Materials and Devices and Method of Manufacture 有权
标题翻译：氮化镓 - 手柄基板材料和器件及其制造方法
公开(公告)号：US20120187412A1
公开(公告)日：2012-07-26
申请号：US13012674
申请日：2011-01-24
申请人： Mark P. D'Evelyn , Arpan Chakraborty , William Houck
发明人： Mark P. D'Evelyn , Arpan Chakraborty , William Houck
IPC分类号： H01L29/20
CPC分类号： H01L33/32 , H01L21/6835 , H01L21/76254 , H01L24/29 , H01L24/83 , H01L29/02 , H01L29/0692 , H01L29/2003 , H01L33/007 , H01L33/0079 , H01L33/22 , H01L33/382 , H01L33/50 , H01L2221/68327 , H01L2221/6835 , H01L2221/68381 , H01L2224/48091 , H01L2224/48137 , H01L2224/49107 , H01L2224/73265 , H01L2224/83193 , H01L2924/12032 , H01L2924/12041 , H01L2924/12042 , H01L2924/12043 , H01L2924/1301 , H01L2924/1305 , H01L2924/13062 , H01L2924/00014 , H01L2924/00
摘要： A gallium and nitrogen containing substrate structure includes a handle substrate member having a first surface and a second surface and a transferred thickness of gallium and nitrogen material. The structure has a gallium and nitrogen containing active region grown overlying the transferred thickness and a recessed region formed within a portion of the handle substrate member. The substrate structure has a conductive material formed within the recessed region configured to transfer thermal energy from at least the transferred thickness of gallium and nitrogen material.
摘要翻译：含镓和氮的衬底结构包括具有第一表面和第二表面以及转移的镓和氮材料厚度的手柄衬底构件。该结构具有生长在转移厚度上的含镓和氮的活性区域和形成在手柄衬底构件的一部分内的凹陷区域。衬底结构具有形成在凹陷区域内的导电材料，其被配置为从至少转移的镓和氮材料的厚度传递热能。

3. 发明授权

US08786053B2 Gallium-nitride-on-handle substrate materials and devices and method of manufacture 有权
标题翻译：镓氮化物处理衬底材料和器件及其制造方法
公开(公告)号：US08786053B2
公开(公告)日：2014-07-22
申请号：US13012674
申请日：2011-01-24
申请人： Mark P. D'Evelyn , Arpan Chakraborty , William Houck
发明人： Mark P. D'Evelyn , Arpan Chakraborty , William Houck
IPC分类号： H01L29/06 , H01L31/0304 , H01L31/0352 , H01L31/036
CPC分类号： H01L33/32 , H01L21/6835 , H01L21/76254 , H01L24/29 , H01L24/83 , H01L29/02 , H01L29/0692 , H01L29/2003 , H01L33/007 , H01L33/0079 , H01L33/22 , H01L33/382 , H01L33/50 , H01L2221/68327 , H01L2221/6835 , H01L2221/68381 , H01L2224/48091 , H01L2224/48137 , H01L2224/49107 , H01L2224/73265 , H01L2224/83193 , H01L2924/12032 , H01L2924/12041 , H01L2924/12042 , H01L2924/12043 , H01L2924/1301 , H01L2924/1305 , H01L2924/13062 , H01L2924/00014 , H01L2924/00
摘要： A gallium and nitrogen containing substrate structure includes a handle substrate member having a first surface and a second surface and a transferred thickness of gallium and nitrogen material. The structure has a gallium and nitrogen containing active region grown overlying the transferred thickness and a recessed region formed within a portion of the handle substrate member. The substrate structure has a conductive material formed within the recessed region configured to transfer thermal energy from at least the transferred thickness of gallium and nitrogen material.
摘要翻译：含镓和氮的衬底结构包括具有第一表面和第二表面以及转移的镓和氮材料厚度的手柄衬底构件。该结构具有生长在转移厚度上的含镓和氮的活性区域和形成在手柄衬底构件的一部分内的凹陷区域。衬底结构具有形成在凹陷区域内的导电材料，其被配置为从至少转移的镓和氮材料的厚度传递热能。

4. 发明授权

US08306081B1 High indium containing InGaN substrates for long wavelength optical devices 有权
标题翻译：用于长波长光学器件的高含铟InGaN衬底
公开(公告)号：US08306081B1
公开(公告)日：2012-11-06
申请号：US12785404
申请日：2010-05-21
申请人： Mathew Schmidt , Mark P. D'Evelyn
发明人： Mathew Schmidt , Mark P. D'Evelyn
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/16 , H01L33/32 , H01S5/0202 , H01S5/0425 , H01S5/2009 , H01S5/2201 , H01S5/3202 , H01S5/3211
摘要： An improved optical device. The device has a gallium nitride substrate member comprising indium entities, gallium entities, and nitrogen entities. In one or more embodiments, the gallium nitride substrate member has an indium content ranging from about 1 to about 50% in weight. Preferably, the gallium nitride substrate member has a semipolar crystalline surface region or a non-polar crystalline surface region. The device has an epitaxially formed laser stripe region comprising an indium content ranging from about 1 to about 50% and formed overlying a portion of the semipolar crystalline orientation surface region or the non-polar crystalline surface region. The laser stripe region is characterized by a cavity orientation in a predefined direction according to a specific embodiment. The laser strip region has a first end and a second end including respective a first cleaved facet provided on the first end of the laser stripe region and a second cleaved facet provided on the second end of the laser stripe region.
摘要翻译：改进的光学装置。该器件具有包括铟实体，镓实体和氮实体的氮化镓衬底构件。在一个或多个实施例中，氮化镓衬底构件的铟含量为约1至约50重量％。优选地，氮化镓衬底构件具有半极性结晶表面区域或非极性结晶表面区域。该器件具有外延形成的激光条纹区域，其包含范围为约1至约50％的铟含量并且形成在半极性晶体取向表面区域或非极性晶体表面区域的一部分上。根据具体实施例，激光条纹区域的特征在于沿着预定方向的空腔取向。激光带区具有第一端和第二端，其包括设置在激光条区域的第一端上的第一切割小面和设置在激光条纹区域的第二端上的第二切割小面。

5. 发明授权

US08323405B2 Process and apparatus for growing a crystalline gallium-containing nitride using an azide mineralizer 有权
标题翻译：使用叠氮化矿化剂生长结晶含镓氮化物的方法和装置
公开(公告)号：US08323405B2
公开(公告)日：2012-12-04
申请号：US12534849
申请日：2009-08-03
申请人： Mark P. D'Evelyn
发明人： Mark P. D'Evelyn
IPC分类号： C30B17/00
CPC分类号： B01J3/008 , B01J3/062 , B01J2203/0665 , B01J2203/068 , C30B7/10 , C30B29/406 , Y10T117/1096
摘要： An apparatus and associated method for large-scale manufacturing of gallium nitride is provided. The apparatus comprises a large diameter autoclave and a raw material basket. Methods include metered addition of dopants in the raw material and control of the atmosphere during crystal growth. The apparatus and methods are scalable up to very large volumes and are cost effective.
摘要翻译：提供了用于大规模制造氮化镓的装置和相关方法。该装置包括大直径高压釜和原料篮。方法包括在原料中计量添加掺杂剂并在晶体生长期间控制大气。该设备和方法可扩展到非常大的体积，并且具有成本效益。

6. 发明授权

US08284810B1 Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods 有权
标题翻译：在非极性或半极性含GaN材料和方法中使用选择的晶体取向的固态激光器件
公开(公告)号：US08284810B1
公开(公告)日：2012-10-09
申请号：US12534838
申请日：2009-08-03
申请人： Rajat Sharma , Eric M. Hall , Christiane Poblenz , Mark P. D'Evelyn
发明人： Rajat Sharma , Eric M. Hall , Christiane Poblenz , Mark P. D'Evelyn
IPC分类号： H01S5/00
CPC分类号： H01S5/3202 , B82Y20/00 , H01S5/0202 , H01S5/1082 , H01S5/1085 , H01S5/2201 , H01S5/34333
摘要： An edge emitting solid state laser and method. The laser comprises at least one AlInGaN active layer on a bulk GaN substrate with a non-polar or semi-polar orientation. The edges of the laser comprise {1 1 −2 ±6} facets. The laser has high gain, low threshold currents, capability for extended operation at high current densities, and can be manufactured with improved yield. The laser is useful for optical data storage, projection displays, and as a source for general illumination.
摘要翻译：边缘发射固态激光器和方法。激光器包括具有非极性或半极性取向的体GaN衬底上的至少一个AlInGaN有源层。激光器的边缘包括{11-2±6}面。激光器具有高增益，低阈值电流，能够在高电流密度下进行扩展操作，并且可以以提高的产量制造。该激光器可用于光学数据存储，投影显示器和一般照明源。

7. 发明授权

US08148801B2 Nitride crystal with removable surface layer and methods of manufacture 有权
标题翻译：氮化物晶体可拆卸表面层及制造方法
公开(公告)号：US08148801B2
公开(公告)日：2012-04-03
申请号：US12546458
申请日：2009-08-24
申请人： Mark P. D'Evelyn
发明人： Mark P. D'Evelyn
IPC分类号： H01L29/20
CPC分类号： C30B29/403 , C30B7/105 , C30B23/025 , C30B25/18 , C30B33/06 , H01L24/81 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/056 , H01L2224/11 , H01L2224/81005 , H01L2224/81224 , H01L2924/00014 , H01L2924/14 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A nitride crystal or wafer with a removable surface layer comprises a high quality nitride base crystal, a release layer, and a high quality epitaxial layer. The release layer has a large optical absorption coefficient at wavelengths where the base crystal is substantially transparent and may be etched under conditions where the nitride base crystal and the high quality epitaxial layer are not. The high quality epitaxial layer may be removed from the nitride base crystal by laser liftoff or by chemical etching after deposition of at least one epitaxial device layer. The nitride crystal with a removable surface layer is useful as a substrate for a light emitting diode, a laser diode, a transistor, a photodetector, a solar cell, or for photoelectrochemical water splitting for hydrogen generation.
摘要翻译：具有可移除表面层的氮化物晶体或晶片包括高质量氮化物基晶，释放层和高质量外延层。释放层在基底基本上是透明的波长处具有大的光吸收系数，并且可以在不具有氮化物基底和高质量外延层的条件下进行蚀刻。可以通过激光剥离或通过在沉积至少一个外延器件层之后的化学蚀刻从氮化物基底晶体去除高质量的外延层。具有可移除表面层的氮化物晶体可用作发光二极管，激光二极管，晶体管，光电检测器，太阳能电池或用于氢发生的光电化学水分解的衬底。

8. 发明申请

US20110220912A1 Semi-insulating Group III Metal Nitride and Method of Manufacture 有权
标题翻译：半绝缘III族金属氮化物及其制造方法
公开(公告)号：US20110220912A1
公开(公告)日：2011-09-15
申请号：US13041199
申请日：2011-03-04
申请人： Mark P. D'Evelyn
发明人： Mark P. D'Evelyn
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： H01L21/3221 , C30B7/105 , C30B29/406 , H01L21/0254 , H01L21/02573 , H01L21/02581 , H01L21/02667 , H01L33/32
摘要： A large-area, high-purity, low-cost single crystal semi-insulating gallium nitride that is useful as substrates for fabricating GaN devices for electronic and/or optoelectronic applications is provided. The gallium nitride is formed by doping gallium nitride material during ammonothermal growth with a deep acceptor dopant species, e.g., Mn, Fe, Co, Ni, Cu, etc., to compensate donor species in the gallium nitride, and impart semi-insulating character to the gallium nitride.
摘要翻译：提供了一种大面积，高纯度，低成本的单晶半绝缘氮化镓，其可用作用于制造用于电子和/或光电应用的GaN器件的基板。氮化镓通过在氮热处理生长期间掺杂氮化镓材料而形成，其中使用了深受主掺杂物质，例如Mn，Fe，Co，Ni，Cu等，以补偿氮化镓中的供体物质，并赋予半绝缘特性到氮化镓。

9. 发明授权

US09157167B1 High pressure apparatus and method for nitride crystal growth 有权
标题翻译：用于氮化物晶体生长的高压装置和方法
公开(公告)号：US09157167B1
公开(公告)日：2015-10-13
申请号：US13556105
申请日：2012-07-23
申请人： Rajeev T. Pakalapati , Mark P. D'Evelyn
发明人： Rajeev T. Pakalapati , Mark P. D'Evelyn
IPC分类号： C30B7/10
CPC分类号： C30B7/10 , B01J3/008 , B01J3/042 , B01J3/065 , B01J2203/0665 , B01J2203/067 , B01J2203/068 , B30B11/002 , B30B11/005 , C30B29/403 , C30B29/406 , Y02P20/544 , Y10T117/10 , Y10T117/1024 , Y10T117/1096
摘要： A high pressure apparatus and related methods for processing supercritical fluids are disclosed. In certain embodiments, the present apparatus includes a capsule, a heater, at least one ceramic ring or multiple rings, optionally, with one or more scribe marks and/or cracks present. In certain embodiments, the apparatus has a metal sleeve containing each ceramic ring. The apparatus also has a high strength enclosure, end flanges with associated insulation, and a power control system. In certain embodiments, a high pressure apparatus is constructed such that the diametric annular gap between the outer diameter of the heater and the ceramic ring is selected to provide radial load-bearing contact above a particular temperature and pressure. In certain embodiments, the apparatus is capable of accessing pressures of 0.2 GPa to 2 GPa and temperatures of 400° C. to 1200° C.
摘要翻译：公开了一种用于加工超临界流体的高压装置和相关方法。在某些实施方案中，本装置包括胶囊，加热器，至少一个陶瓷环或多个环，任选地，存在一个或多个划痕和/或裂纹。在某些实施例中，该装置具有包含每个陶瓷环的金属套筒。该设备还具有高强度外壳，具有相关绝缘的端部法兰和功率控制系统。在某些实施例中，高压设备被构造成使得加热器外径与陶瓷环之间的直径环形间隙被选择成在特定温度和压力之上提供径向承载接触。在某些实施方案中，该装置能够获得0.2GPa至2GPa的压力和400℃至1200℃的温度。

10. 发明授权

US08444765B2 Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride 有权
标题翻译：用于大规模制造大块单晶含镓氮化物的方法和装置
公开(公告)号：US08444765B2
公开(公告)日：2013-05-21
申请号：US13226249
申请日：2011-09-06
申请人： Mark P. D'Evelyn
发明人： Mark P. D'Evelyn
IPC分类号： C30B7/10
CPC分类号： B01J3/008 , B01J3/062 , B01J2203/0665 , B01J2203/068 , C30B7/10 , C30B29/403 , C30B29/406 , Y10T117/1008
摘要： A method for large-scale manufacturing of gallium nitride includes a process for reducing and/or minimizing contamination in the crystals, for solvent addition to an autoclave, for improving or optimizing the solvent atmosphere composition, for removal of the solvent from the autoclave, and for recycling of the solvent. The method is scalable up to large volumes and is cost effective.
摘要翻译：用于大规模制造氮化镓的方法包括用于减少和/或最小化晶体中的污染物的方法，用于溶剂添加到高压釜中，用于改进或优化溶剂气氛组合物，用于从高压釜中除去溶剂;以及用于回收溶剂。该方法可扩展到大容量，并且具有成本效益。

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