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1. 发明申请

US20070191350A1 Combinations comprising alpha-2-delta ligands 审中-公开
标题翻译：包含α-2-δ配体的组合
公开(公告)号：US20070191350A1
公开(公告)日：2007-08-16
申请号：US10598712
申请日：2005-02-24
申请人： Mark Field , Richard Williams
发明人： Mark Field , Richard Williams
IPC分类号： A61K31/551 , A61K31/519 , A61K31/496 , A61K31/195
CPC分类号： A61K31/197 , A61K31/195 , A61K31/401 , A61K31/41 , A61K31/496 , A61K31/517 , A61K31/519 , A61K31/551 , A61K31/5513 , A61K31/554 , A61K45/06 , A61K2300/00
摘要： The instant invention relates to a combination, particularly a synergistic combination, of an alpha-2-delta ligand and an atypical antipsychotic, and pharmaceutically acceptable salts thereof, pharmaceutical compositions thereof and their use in the treatment of pain, particularly neuropathic pain.
摘要翻译：本发明涉及α-2-δ配体和非典型抗精神病药及其药学上可接受的盐，其药物组合物及其在治疗疼痛，特别是神经性疼痛中的用途的组合，特别是协同组合。

2. 发明申请

US20050065176A1 Combinations 审中-公开
标题翻译：组合
公开(公告)号：US20050065176A1
公开(公告)日：2005-03-24
申请号：US10936416
申请日：2004-09-08
申请人： Mark Field , Richard Williams
发明人： Mark Field , Richard Williams
IPC分类号： A61K31/196 , A61K31/197 , A61K31/27 , A61K31/407 , A61K31/445 , A61K31/454 , A61K31/473 , A61K31/55 , A61K31/662 , A61K45/06 , A61K31/4745 , A61K31/195 , A61K31/41
CPC分类号： A61K45/06 , A61K31/196 , A61K31/197 , A61K31/27 , A61K31/407 , A61K31/445 , A61K31/454 , A61K31/473 , A61K31/55 , A61K31/662 , A61K2300/00
摘要： The instant invention relates to a combination of an alpha-2-delta ligand and an AChE inhibitor for use in therapy, particularly in the treatment of pain, particularly neuropathic pain. Particularly preferred alpha-2-delta ligands are gabapentin and pregabalin. Particularly preferred ACHE inhibitors are donepezil (Aricept®), tacrine (cognex®), rivastigmine (Exelon®), physostgmine (Synapton®), galantamine (Reminyl), metrifonate (Promem), neostigmine (Prostigmin) and icopezil.
摘要翻译：本发明涉及用于治疗的α-2-δ配体和AChE抑制剂的组合，特别是用于治疗疼痛，特别是神经性疼痛。特别优选的α-2-δ配体是加巴喷丁和普瑞巴林。特别优选的ACHE抑制剂是多奈哌齐（Aricept），他克林（racrine），利凡斯的明（Exelon），毒蜥塞斯汀（Synapon），加兰他敏（Reminyl），偏头痛（Promem），新斯的明（Prostigmin ）和icopezil。

3. 发明申请

US20050059715A1 Combinations comprising alpha-2-delta ligands 审中-公开
标题翻译：包含α-2-δ配体的组合
公开(公告)号：US20050059715A1
公开(公告)日：2005-03-17
申请号：US10935824
申请日：2004-09-08
申请人： David Dooley , Mark Field , Richard Williams
发明人： David Dooley , Mark Field , Richard Williams
IPC分类号： A61K31/136 , A61K31/137 , A61K31/165 , A61K31/196 , A61K31/197 , A61K31/381 , A61K31/5375 , A61K45/06 , A61P25/02 , A61P25/04 , A61P25/06 , A61P29/00 , A61K31/4245 , A61K31/195 , A61K31/407
CPC分类号： A61K31/5375 , A61K31/135 , A61K31/136 , A61K31/137 , A61K31/165 , A61K31/195 , A61K31/196 , A61K31/197 , A61K31/381 , A61K45/06 , A61K2300/00
摘要： The instant invention relates to a combination, particularly a synergistic combination, of an alpha-2-delta ligand and a dual serotonin-noradrenaline re-uptake inhibitor (DSNRI) or one or both of a selective serotonin re-uptake inhibitor (SSRI) and a selective noradrenaline re-uptake inhibitor (SNRI), and pharmaceutically acceptable salths thereof, pharmaceutical compositions thereof and their use in the treatment of pain, particularly neuropathic pain.
摘要翻译：本发明涉及α-2-δ配体和双重5-羟色胺 - 去甲肾上腺素再吸收抑制剂（DSNRI）或选择性5-羟色胺再吸收抑制剂（SSRI）和其中一种或两种的组合，特别是协同组合选择性去甲肾上腺素再吸收抑制剂（SNRI）及其药学上可接受的盐，其药物组合物及其在治疗疼痛，特别是神经性疼痛中的用途。

4. 发明授权

US08178863B2 Lateral collection architecture for SLS detectors 有权
标题翻译： SLS检测器的横向收集架构
公开(公告)号：US08178863B2
公开(公告)日：2012-05-15
申请号：US12476226
申请日：2009-06-01
申请人： William E. Tennant , Gerard J. Sullivan , Mark Field
发明人： William E. Tennant , Gerard J. Sullivan , Mark Field
IPC分类号： H01L29/06
CPC分类号： H01L31/035236 , B82Y20/00 , H01L27/1446 , H01L31/03529 , H01L31/101 , Y02E10/50
摘要： Lateral collection architecture for a photodetector is achieved by depositing electrically conducting SLS layers onto a planar substrate and diffusing dopants of a carrier type opposite that of the layers through the layers at selected regions to disorder the superlattice and create diode junctions oriented transversely to the naturally enhanced lateral mobility of photogenerated charge carriers within the superlattice. The diode junctions are terminated at a top surface of the photodetector within an SLS layer of wide bandgap material to minimize unwanted currents. A related architecture disorders the superlattice of topmost SLS layers by diffusing therethrough a dopant configured as a grid and penetrating to a lower SLS layer having the same carrier type as the dopant and opposite that of the topmost layers to isolate pixels within the topmost layers. Ohmic contacts may be deposited on doped regions, pixels, and substrate to provide desired external connections.
摘要翻译：光电探测器的横向收集结构是通过将平面衬底上的导电SLS层沉积在平坦衬底上并且将选定区域中的层的相反层的载流子类型的掺杂物扩散到超选择区域，从而扰乱超晶格并产生横向于自然增强的二极管结在超晶格内的光生电荷载流子的横向迁移率。二极管结终止在宽带隙材料的SLS层内的光电检测器的顶表面处，以最小化不需要的电流。相关的结构通过扩散配置成栅格的掺杂剂并穿透到具有与掺杂剂相同的载流子类型并与顶层相反的下部SLS层，使顶层SLS层的超晶格失真，从而隔离最顶层中的像素。欧姆接触可以沉积在掺杂区域，像素和衬底上以提供期望的外部连接。

5. 发明申请

US20110294252A1 LATERAL COLLECTION ARCHITECTURE FOR SLS DETECTORS 有权
标题翻译： SLS检测器的横向收集架构
公开(公告)号：US20110294252A1
公开(公告)日：2011-12-01
申请号：US13205403
申请日：2011-08-08
申请人： William E. Tennant , Gerard J. Sullivan , Mark Field
发明人： William E. Tennant , Gerard J. Sullivan , Mark Field
IPC分类号： H01L31/18
CPC分类号： H01L31/035236 , B82Y20/00 , H01L27/1446 , H01L31/03529 , H01L31/101 , Y02E10/50
摘要： Lateral collection architecture for a photodetector is achieved by depositing electrically conducting SLS layers onto a planar substrate and diffusing dopants of a carrier type opposite that of the layers through the layers at selected regions to disorder the superlattice and create diode junctions oriented transversely to the naturally enhanced lateral mobility of photogenerated charge carriers within the superlattice. The diode junctions are terminated at a top surface of the photodetector within an SLS layer of wide bandgap material to minimize unwanted currents. A related architecture disorders the superlattice of topmost SLS layers by diffusing therethrough a dopant configured as a grid and penetrating to a lower SLS layer having the same carrier type as the dopant and opposite that of the topmost layers to isolate pixels within the topmost layers. Ohmic contacts may be deposited on doped regions, pixels, and substrate to provide desired external connections.
摘要翻译：光电探测器的横向收集结构是通过将平面衬底上的导电SLS层沉积在平坦衬底上并且将选定区域中的层的相反层的载流子类型的掺杂物扩散到超选择区域，从而扰乱超晶格并产生横向于自然增强的二极管结在超晶格内的光生电荷载流子的横向迁移率。二极管结终止在宽带隙材料的SLS层内的光电检测器的顶表面处，以最小化不需要的电流。相关的结构通过扩散配置成栅格的掺杂剂并穿透到具有与掺杂剂相同的载流子类型并与顶层相反的下部SLS层，使顶层SLS层的超晶格失真，从而隔离最顶层中的像素。欧姆接触可以沉积在掺杂区域，像素和衬底上以提供期望的外部连接。

6. 发明授权

US08614610B2 Ruggedized waveguide encapsulation fixture for receiving a compressed waveguide component 有权
标题翻译：用于接收压缩波导部件的坚固的波导封装固定装置
公开(公告)号：US08614610B2
公开(公告)日：2013-12-24
申请号：US12877059
申请日：2010-09-07
申请人： Jonathan Hacker , Chris Hillman , Mark Field , Robert L. Borwick, III
发明人： Jonathan Hacker , Chris Hillman , Mark Field , Robert L. Borwick, III
IPC分类号： H01P3/12
CPC分类号： H01P3/121 , H01P3/12 , H01P11/002
摘要： A waveguide component encapsulation device may include a housing having first and second surfaces, the housing defining a channel extending through the first and second surfaces, a micromachined waveguide component configured to be positioned in the channel, the waveguide component having first and second ends extending outside the channel and beyond the first and second surfaces of the housing by a finite length, and a pair of spacing members configured to align and stabilize the waveguide component within the channel.
摘要翻译：波导部件封装装置可以包括具有第一和第二表面的壳体，壳体限定延伸穿过第一和第二表面的通道，微机械加工的波导部件，其构造成定位在通道中，波导部件具有第一和第二端部延伸到外部所述通道并且超过所述壳体的所述第一和第二表面有限长度，以及一对间隔构件，其被配置成对准并稳定所述通道内的所述波导部件。

7. 发明申请

US20100301309A1 LATERAL COLLECTION ARCHITECTURE FOR SLS DETECTORS 有权
标题翻译： SLS检测器的横向收集架构
公开(公告)号：US20100301309A1
公开(公告)日：2010-12-02
申请号：US12476226
申请日：2009-06-01
申请人： William E. Tennant , Gerard J. Sullivan , Mark Field
发明人： William E. Tennant , Gerard J. Sullivan , Mark Field
IPC分类号： H01L31/0352 , H01L21/3205
CPC分类号： H01L31/035236 , B82Y20/00 , H01L27/1446 , H01L31/03529 , H01L31/101 , Y02E10/50
摘要： Lateral collection architecture for a photodetector is achieved by depositing electrically conducting SLS layers onto a planar substrate and diffusing dopants of a carrier type opposite that of the layers through the layers at selected regions to disorder the superlattice and create diode junctions oriented transversely to the naturally enhanced lateral mobility of photogenerated charge carriers within the superlattice. The diode junctions are terminated at a top surface of the photodetector within an SLS layer of wide bandgap material to minimize unwanted currents. A related architecture disorders the superlattice of topmost SLS layers by diffusing therethrough a dopant configured as a grid and penetrating to a lower SLS layer having the same carrier type as the dopant and opposite that of the topmost layers to isolate pixels within the topmost layers. Ohmic contacts may be deposited on doped regions, pixels, and substrate to provide desired external connections.
摘要翻译：光电探测器的横向收集结构是通过将平面衬底上的导电SLS层沉积在平坦衬底上并且将选定区域中的层的相反层的载流子类型的掺杂物扩散到超选择区域，从而扰乱超晶格并产生横向于自然增强的二极管结在超晶格内的光生电荷载流子的横向迁移率。二极管结终止在宽带隙材料的SLS层内的光电检测器的顶表面处，以最小化不需要的电流。相关的结构通过扩散配置成栅格的掺杂剂并穿透到具有与掺杂剂相同的载流子类型并与顶层相反的下部SLS层，使顶层SLS层的超晶格失真，从而隔离最顶层中的像素。欧姆接触可以沉积在掺杂区域，像素和衬底上以提供期望的外部连接。

8. 发明授权

US08697554B2 Lateral collection architecture for SLS detectors 有权
标题翻译： SLS检测器的横向收集架构
公开(公告)号：US08697554B2
公开(公告)日：2014-04-15
申请号：US13205403
申请日：2011-08-08
申请人： William E. Tennant , Gerard J. Sullivan , Mark Field
发明人： William E. Tennant , Gerard J. Sullivan , Mark Field
IPC分类号： H01L21/425
CPC分类号： H01L31/035236 , B82Y20/00 , H01L27/1446 , H01L31/03529 , H01L31/101 , Y02E10/50
摘要： Lateral collection architecture for a photodetector is achieved by depositing electrically conducting SLS layers onto a planar substrate and diffusing dopants of a carrier type opposite that of the layers through the layers at selected regions to disorder the superlattice and create diode junctions oriented transversely to the naturally enhanced lateral mobility of photogenerated charge carriers within the superlattice. The diode junctions are terminated at a top surface of the photodetector within an SLS layer of wide bandgap material to minimize unwanted currents. A related architecture disorders the superlattice of topmost SLS layers by diffusing therethrough a dopant configured as a grid and penetrating to a lower SLS layer having the same carrier type as the dopant and opposite that of the topmost layers to isolate pixels within the topmost layers. Ohmic contacts may be deposited on doped regions, pixels, and substrate to provide desired external connections.
摘要翻译：光电探测器的横向收集结构是通过将平面衬底上的导电SLS层沉积在平坦衬底上并且将选定区域中的层的相反层的载流子类型的掺杂物扩散到超选择区域，从而扰乱超晶格并产生横向于自然增强的二极管结在超晶格内的光生电荷载流子的横向迁移率。二极管结终止在宽带隙材料的SLS层内的光电检测器的顶表面处，以最小化不需要的电流。相关的结构通过扩散配置成栅格的掺杂剂并穿透到具有与掺杂剂相同的载流子类型并与顶层相反的下部SLS层，使顶层SLS层的超晶格失真，从而隔离最顶层中的像素。欧姆接触可以沉积在掺杂区域，像素和衬底上以提供期望的外部连接。

9. 发明申请

US20120057839A1 RUGGEDIZED WAVEGUIDE ENCAPSULATION FIXTURE 有权
标题翻译：强化波形封装
公开(公告)号：US20120057839A1
公开(公告)日：2012-03-08
申请号：US12877059
申请日：2010-09-07
申请人： Jonathan Hacker , Chris Hillman , Mark Field , Robert L. Borwick, III
发明人： Jonathan Hacker , Chris Hillman , Mark Field , Robert L. Borwick, III
IPC分类号： G02B6/44 , H01P1/00 , H01P3/00 , G02B6/10
CPC分类号： H01P3/121 , H01P3/12 , H01P11/002
摘要： A waveguide component encapsulation device may include a housing having first and second surfaces, the housing defining a channel extending through the first and second surfaces, a micromachined waveguide component configured to be positioned in the channel, the waveguide component having first and second ends extending outside the channel and beyond the first and second surfaces of the housing by a finite length, and a pair of spacing members configured to align and stabilize the waveguide component within the channel.
摘要翻译：波导部件封装装置可以包括具有第一和第二表面的壳体，壳体限定延伸穿过第一和第二表面的通道，微机械加工的波导部件，其构造成定位在通道中，波导部件具有第一和第二端部延伸到外部所述通道并且超过所述壳体的所述第一和第二表面有限长度，以及一对间隔构件，其被配置成对准并稳定所述通道内的所述波导部件。

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