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    • 8. 发明授权
    • Combined atomic layer deposition and damascene processing for definition of narrow trenches
    • 用于定义窄沟槽的组合原子层沉积和镶嵌加工
    • US06949833B2
    • 2005-09-27
    • US10273195
    • 2002-10-17
    • William Jude O'KaneRobert William Lamberton
    • William Jude O'KaneRobert William Lamberton
    • G11B5/31H01L23/48H01L23/58
    • G11B5/3163G11B5/3116
    • The invention offers a structure that includes a substrate with a top surface and a bottom surface, an etched dielectric layer having sidewalls and an upper surface, wherein the etched dielectric layer with a thickness of v, is positioned upon a first portion of the top surface of the substrate but not positioned upon a second portion of the top surface of the substrate having a width equal to x, an atomic layer deposited (ALD) film with a thickness of y, positioned upon the upper surface of the etched dielectric layer, the sidewalls of the etched dielectric layer, and the second portion of the top surface of the substrate, and a trench formed by the atomic layer with a width equal to x−2y. The invention also offers a method of forming a structure with a trench that includes the steps of depositing a dielectric layer on a substrate, forming a patterned photoresist on the dielectric layer, forming a space having a width x, by etching the dielectric layer, removing the patterned photoresist to form a gap having sidewalls and a bottom, and depositing an atomic layer with a thickness of y on the etched dielectric layer, and the sidewalls and the bottom of the gap, wherein a trench is formed by the atomic layer deposited on the sidewalls and bottom of the gap.
    • 本发明提供了一种结构,其包括具有顶表面和底表面的基底,具有侧壁和上表面的蚀刻介电层,其中具有厚度v的蚀刻介电层位于顶表面的第一部分 的基底,但不位于具有等于x的宽度的x的衬底的顶表面的第二部分上,厚度为y的原子层沉积(ALD)膜位于蚀刻介电层的上表面上, 蚀刻的介电层的侧壁和衬底的顶表面的第二部分以及由宽度等于x-2y的原子层形成的沟槽。 本发明还提供一种形成具有沟槽的结构的方法,该方法包括以下步骤:在衬底上沉积电介质层,在电介质层上形成图案化的光致抗蚀剂,通过蚀刻介电层形成具有宽度x的空间, 图案化的光致抗蚀剂以形成具有侧壁和底部的间隙,并且在蚀刻的电介质层上沉积厚度为y的原子层以及间隙的侧壁和底部,其中沟槽由原子层沉积在 间隙的侧壁和底部。