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1. 发明授权

US06175160B1 Flip-chip having an on-chip cache memory 有权
标题翻译：倒装芯片具有片上缓存存储器
公开(公告)号：US06175160B1
公开(公告)日：2001-01-16
申请号：US09227983
申请日：1999-01-08
申请人： Mario Paniccia , Edward Burton
发明人： Mario Paniccia , Edward Burton
IPC分类号： H01L2348
CPC分类号： H01L25/18 , H01L23/481 , H01L25/0657 , H01L2224/05124 , H01L2224/05147 , H01L2224/05166 , H01L2224/05184 , H01L2224/05568 , H01L2224/0557 , H01L2224/05573 , H01L2224/16 , H01L2224/16235 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06582 , H01L2225/06586 , H01L2924/00013 , H01L2924/00014 , H01L2924/15153 , H01L2924/15165 , H01L2924/15311 , H01L2924/3011 , H01L2224/29099 , H01L2224/05599
摘要： A flip-chip with an on-chip cache memory device. The flip-chip includes a semiconductor substrate having first and second opposing surfaces with circuit elements formed within the first surface. A plurality of raised bump contacts are located on the first surface and connected to the circuit elements. Additionally, a plurality of electrical interconnects are located on the second surface and connected to the circuit elements. A cache memory device is electrically coupled to the plurality of electrical interconnects located on the second surface.
摘要翻译：具有片上缓存存储器件的倒装芯片。倒装芯片包括具有形成在第一表面内的电路元件的第一和第二相对表面的半导体衬底。多个突出的凸起触头位于第一表面上并连接到电路元件。另外，多个电互连位于第二表面上并连接到电路元件。高速缓冲存储器件电耦合到位于第二表面上的多个电互连。

2. 发明申请

US20070164385A1 Germanium/silicon avalanche photodetector with separate absorption and multiplication regions 有权
公开(公告)号：US20070164385A1
公开(公告)日：2007-07-19
申请号：US11724805
申请日：2007-03-15
申请人： Michael Morse , Olufemi Dosunmu , Ansheng Liu , Mario Paniccia
发明人： Michael Morse , Olufemi Dosunmu , Ansheng Liu , Mario Paniccia
IPC分类号： H01L27/14
CPC分类号： H01L31/1075 , H01L27/14629 , H01L31/028 , H01L31/0312 , H01L31/1812 , Y02E10/547
摘要： A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.

3. 发明申请

US20050249462A1 Method and apparatus providing an electrical-optical coupler 有权
标题翻译：提供电光耦合器的方法和装置
公开(公告)号：US20050249462A1
公开(公告)日：2005-11-10
申请号：US10840413
申请日：2004-05-06
申请人： Andrew Alduino , Mario Paniccia
发明人： Andrew Alduino , Mario Paniccia
IPC分类号： G02B6/36 , G02B6/42 , G02B6/30 , G02B6/26
CPC分类号： G02B6/4214 , G02B6/4201 , G02B6/4243 , G02B6/4246 , G02B6/4277 , G02B6/428
摘要： An electrical-optical coupling device. An apparatus according to an embodiment of the present invention includes a first trench defined in a first semiconductor substrate. A first reflector is defined at a first end of the first trench in the first semiconductor substrate. The first reflector is angled with respect to an axis of the first trench. A first optical fiber is disposed in the first trench at a second end of the first trench. An optical source is mounted to the first semiconductor substrate proximate to the first trench. The optical source is optically coupled to the first optical fiber via the first reflector.
摘要翻译：一种电光耦合装置。根据本发明的实施例的装置包括限定在第一半导体衬底中的第一沟槽。第一反射器限定在第一半导体衬底中的第一沟槽的第一端。第一反射器相对于第一沟槽的轴线成角度。第一光纤在第一沟槽的第二端设置在第一沟槽中。光源被安装到靠近第一沟槽的第一半导体衬底上。光源通过第一反射器光耦合到第一光纤。

4. 发明申请

US20050123260A1 Method and apparatus for isolating an active region in an optical waveguide 有权
标题翻译：用于隔离光波导中的有源区的方法和装置
公开(公告)号：US20050123260A1
公开(公告)日：2005-06-09
申请号：US10731559
申请日：2003-12-09
申请人： Ansheng Liu , Mario Paniccia
发明人： Ansheng Liu , Mario Paniccia
IPC分类号： G02F1/025 , G02B6/10 , G02F1/035
CPC分类号： G02F1/025 , G02F2201/063
摘要： An apparatus and method for modulating a phase of optical beam in an electrically isolated active region of an optical waveguide. In one embodiment, an apparatus according to embodiments of the present invention includes an active region of an optical waveguide disposed in a semiconductor layer. The active region includes a p doped region and an n doped region. The apparatus further includes an insulating region disposed in the semiconductor layer surrounding the active region in the semiconductor layer. The insulating region electrically isolates the active region of the optical waveguide from a passive region of the optical waveguide disposed in the semiconductor layer. An optical beam is to be directed through the optical waveguide and through the active region to be phase shifted in response to a modulated charge region in the active region in the optical waveguide.
摘要翻译：一种用于调制光波导的电隔离有源区中的光束相位的装置和方法。在一个实施例中，根据本发明的实施例的装置包括设置在半导体层中的光波导的有源区。有源区包括p掺杂区和n掺杂区。该装置还包括设置在半导体层中的绝缘区域，该半导体层围绕半导体层中的有源区域。绝缘区域将光波导的有源区域与设置在半导体层中的光波导的无源区域电隔离。光束将被引导通过光波导并且通过有源区域响应于光波导中的有源区域中的调制的电荷区域被相移。

5. 发明申请

US20050053111A1 Method and apparatus for Raman ring resonator based laser/wavelength converter 有权
标题翻译：用于拉曼环谐振器的激光/波长转换器的方法和装置
公开(公告)号：US20050053111A1
公开(公告)日：2005-03-10
申请号：US10659009
申请日：2003-09-10
申请人： Remus Nicolaescu , Mario Paniccia
发明人： Remus Nicolaescu , Mario Paniccia
IPC分类号： G02B6/12 , H01S3/00 , H01S3/083 , H01S3/0941 , H01S3/30
CPC分类号： H01S3/0941 , G02B6/12004 , H01S3/005 , H01S3/083 , H01S3/30
摘要： A Raman ring resonator based laser and wavelength converter method and apparatus. In one aspect of the present invention, the disclosed method includes directing a first optical beam of a first wavelength and a first power level into a first ring resonator defined in a semiconductor material. Emission of a second optical beam of a second wavelength is caused in the first ring resonator by propagating the first optical beam around the first ring resonator. The first power level is sufficient to cause the emission of the second optical beam. The first optical beam is directed out of the first ring resonator after a round trip of the first optical beam around the first ring resonator. The second optical beam is recirculated around the first ring resonator to further stimulate the emission of the second optical beam in the first ring resonator.
摘要翻译：一种拉曼环形谐振器的激光和波长转换器的方法和装置。在本发明的一个方面，所公开的方法包括将第一波长和第一功率电平的第一光束引导到限定在半导体材料中的第一环形谐振器中。通过在第一环形谐振器周围传播第一光束，在第一环形谐振器中产生第二波长的第二光束的发射。第一功率电平足以引起第二光束的发射。在第一光束围绕第一环形谐振器的往返之后，第一光束被引导出第一环形谐振器。第二光束围绕第一环形谐振器再循环，以进一步刺激第一环形谐振器中的第二光束的发射。

6. 发明申请

US20060215726A1 Integrated optical detector in semiconductor reflector 有权
标题翻译：集成光检测器在半导体反射器
公开(公告)号：US20060215726A1
公开(公告)日：2006-09-28
申请号：US11092059
申请日：2005-03-28
申请人： Andrew Alduino , Mario Paniccia , Rami Cohen , Assia Barkai , Ansheng Liu
发明人： Andrew Alduino , Mario Paniccia , Rami Cohen , Assia Barkai , Ansheng Liu
IPC分类号： H01S3/08
CPC分类号： G02B6/4246 , G02B6/4214 , G02B2006/12104
摘要： An electrical-optical coupling and detecting device. An apparatus according to an embodiment of the present invention includes a reflective surface defined on semiconductor material. The reflective surface is to reflect an incident optical beam towards an optical destination. An optical detector is monolithically integrated in the reflective surface of the semiconductor material. The optical detector arranged in the reflective surface of the semiconductor material is to detect the incident optical beam.
摘要翻译：电光耦合和检测装置。根据本发明实施例的装置包括限定在半导体材料上的反射表面。反射表面是将入射光束反射到光学目的地。光学检测器单片集成在半导体材料的反射表面中。布置在半导体材料的反射表面中的光学检测器是检测入射光束。

7. 发明申请

US20060083465A1 Three dimensional semiconductor based optical switching device 有权
标题翻译：基于三维半导体的光开关器件
公开(公告)号：US20060083465A1
公开(公告)日：2006-04-20
申请号：US10947633
申请日：2004-09-22
申请人： Remus Nicolaescu , Mario Paniccia
发明人： Remus Nicolaescu , Mario Paniccia
IPC分类号： G02B6/26 , H04B10/04 , H04B10/12
CPC分类号： G02F1/025
摘要： A device with optical switching between multiple layers of a semiconductor die is disclosed. In one aspect of the present invention, the disclosed apparatus includes a first semiconductor material layer of a semiconductor die. The first semiconductor material layer has a first optical waveguide. A second semiconductor material layer is also included in the semiconductor die. The second semiconductor material layer has a second optical waveguide. An insulating layer is disposed between the first and second semiconductor material layers such that there is an evanescent coupling between the first and second semiconductor material layers. There are modulated charge layers proximate to the insulating layer such that a coupling length of the evanescent coupling is controlled in response to the modulated charge layers.
摘要翻译：公开了一种在半导体管芯的多层之间进行光切换的器件。在本发明的一个方面，所公开的装置包括半导体管芯的第一半导体材料层。第一半导体材料层具有第一光波导。第二半导体材料层也包括在半导体管芯中。第二半导体材料层具有第二光波导。绝缘层设置在第一和第二半导体材料层之间，使得在第一和第二半导体材料层之间存在ev逝耦合。存在靠近绝缘层的调制电荷层，使得响应于调制的电荷层来控制ev逝耦合的耦合长度。

8. 发明申请

US20050265679A1 Two-photon absorption generated carrier lifetime reduction in semiconductor waveguide for semiconductor based raman laser and amplifier 有权
标题翻译：半导体半导体激光和放大器的半导体波导中双光子吸收产生载流子寿命减少
公开(公告)号：US20050265679A1
公开(公告)日：2005-12-01
申请号：US10933652
申请日：2004-09-02
申请人： Ansheng Liu , Mario Paniccia , Haisheng Rong
发明人： Ansheng Liu , Mario Paniccia , Haisheng Rong
IPC分类号： G02B6/12 , G02B6/122 , G02B6/26
CPC分类号： G02B6/122 , G02B2006/12097 , H01S3/063 , H01S3/083 , H01S3/0941 , H01S3/30
摘要： A semiconductor based Raman laser and/or amplifier with reduced two-photon absorption generated carrier lifetimes. An apparatus according to embodiments of the present invention includes optical waveguide disposed in semiconductor material and a diode structure disposed in the optical waveguide. The optical waveguide is to be coupled to a pump laser to receive a first optical beam having a first wavelength and a first power level to result in emission of a second optical beam of a second wavelength in the semiconductor waveguide. The diode structure is to be biased to sweep out free carriers from the optical waveguide generated in response to two photon absorption in the optical waveguide.
摘要翻译：具有降低的双光子吸收的半导体基拉曼激光器和/或放大器产生载流子寿命。根据本发明的实施例的装置包括设置在半导体材料中的光波导和设置在光波导中的二极管结构。光波导将耦合到泵激光器以接收具有第一波长和第一功率电平的第一光束，以导致在半导体波导中发射第二波长的第二光束。二极管结构被偏置以从响应于光波导中的两个光子吸收而产生的光波导扫出自由载流子。

9. 发明申请

US20050175305A1 Method and apparatus for polarization insensitive phase shifting of an optical beam in an optical device 失效
标题翻译：用于光学器件中的光束的偏振不敏感相移的方法和装置
公开(公告)号：US20050175305A1
公开(公告)日：2005-08-11
申请号：US10775737
申请日：2004-02-10
申请人： Ansheng Liu , Richard Jones , Mario Paniccia , Graham Reed
发明人： Ansheng Liu , Richard Jones , Mario Paniccia , Graham Reed
IPC分类号： G02F1/025 , G02B6/10
CPC分类号： G02F1/025 , G02F2203/06
摘要： An apparatus and method for modulating a phase of optical beam independent of polarization. In one embodiment, an apparatus according to embodiments of the present invention includes a first region of an optical waveguide disposed in semiconductor material, the first region having a first conductivity type, and a second region of the optical waveguide disposed in the semiconductor material, the second region having a second conductivity type opposite to the first conductivity type. The apparatus also includes a substantially V shaped insulating region disposed between the first and second regions of the optical waveguide, wherein a vertex of the substantially V shaped insulating region forms an intersecting line that is substantially parallel to an optical path of an optical beam to be directed through the optical waveguide.
摘要翻译：用于独立于偏振调制光束的相位的装置和方法。在一个实施例中，根据本发明的实施例的装置包括设置在半导体材料中的光波导的第一区域，具有第一导电类型的第一区域和设置在半导体材料中的光波导的第二区域，第二区域具有与第一导电类型相反的第二导电类型。该装置还包括设置在光波导的第一和第二区域之间的基本为V形的绝缘区域，其中大致V形的绝缘区域的顶点形成基本上平行于光束的光路的相交线，引导通过光波导。

10. 发明申请

US20060289957A1 Germanium/silicon avalanche photodetector with separate absorption and multiplication regions 有权
标题翻译：锗/硅雪崩光电探测器，具有单独的吸收和乘法区域
公开(公告)号：US20060289957A1
公开(公告)日：2006-12-28
申请号：US11170556
申请日：2005-06-28
申请人： Michael Morse , Olufemi Dosunmu , Ansheng Liu , Mario Paniccia
发明人： Michael Morse , Olufemi Dosunmu , Ansheng Liu , Mario Paniccia
IPC分类号： H01L31/107
CPC分类号： H01L31/1075 , H01L27/14629 , H01L31/028 , H01L31/0312 , H01L31/1812 , Y02E10/547
摘要： A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.
摘要翻译：公开了一种基于半导体波导的光接收器。根据本发明的方面的装置包括吸收区域，其包括靠近第二类型的半导体区域的第一类型的半导体区域。第一类型的半导体是吸收第一波长范围内的光并且第二类型的半导体吸收在第二波长范围内的光。倍增区域被定义为接近并与吸收区域分离。乘法区域包括本征半导体区域，其中存在用于乘以在吸收区域中产生的电子的电场。

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