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1. 发明授权

US5449654A Manufacture of silicon carbide foam from a polyurethane foam impregnated with resin containing silicon 失效
标题翻译：从浸渍有含硅树脂的聚氨酯泡沫制造碳化硅泡沫
公开(公告)号：US5449654A
公开(公告)日：1995-09-12
申请号：US402837
申请日：1995-03-13
申请人： Marie Prin , Gerard Baluais
发明人： Marie Prin , Gerard Baluais
IPC分类号： C01B31/36 , B01J27/224 , C04B35/573 , C04B38/00 , F02B3/06 , B01D39/20
CPC分类号： C04B38/0022 , B01J27/224 , C04B2111/00793 , C04B2111/0081 , F02B3/06
摘要： The invention concerns a process for preparing a silicon carbide foam consisting of attacking a polyurethane foam with an alkaline solution, impregnating it, after rinsing and drying, with a suspension of silicon powder in an organic resin, heating progressively to polymerise the resin, carbonising the polyurethane foam and resin, and finally carburising the silicon contained in the resin suspension by means of the carbon originating from the carbonisation of the foam and resin.The foams obtained are characterised by a high microporosity and a mesoporosity which is variable according to the carburising temperature.The invention finds an application in the manufacture of catalyst carriers for exhaust chambers and filters for diesel engines.
摘要翻译：本发明涉及一种制备碳化硅泡沫的方法，该方法包括用碱性溶液攻击聚氨基甲酸乙酯泡沫，在漂洗和干燥之后用硅粉在有机树脂中的悬浮液浸渍，逐渐加热以聚合树脂，将聚氨酯泡沫和树脂，并且最后通过来自泡沫和树脂的碳化的碳渗碳树脂悬浮液中所含的硅。获得的泡沫体的特征在于高微孔度和根据渗碳温度变化的中孔隙度。本发明在制造用于柴油发动机的排气室和过滤器的催化剂载体中发现。

2. 发明授权

US06184178B2 Catalyst support with base of silicon carbide with high specific surface area in granulated form having improved mechanical characteristics 有权
标题翻译：催化剂载体具有具有改善的机械特性的具有高比表面积的碳化硅的基体，其具有颗粒形式
公开(公告)号：US06184178B2
公开(公告)日：2001-02-06
申请号：US09331891
申请日：1999-07-27
申请人： Gerard Baluais , Benoist Ollivier
发明人： Gerard Baluais , Benoist Ollivier
IPC分类号： B01J27224
CPC分类号： B01J27/224
摘要： Catalyst support in granular form with a SiC&bgr; crystallite base and a high specific surface area having improved mechanical characteristics. The porosity of the support is between 0.001 and 1 um in size and the crystallinity of the support is determined by: a full width at half maximum of diffraction X rays, corresponding to plane [2 2 0] of the SiC&bgr; crystallites, of between 0.15 and 0.60°, angle 2&thgr; of Bragg's law; and a bidimensional peak height [1 0] corresponding to directions [1 0] normalized by the integrated intensity of the peak of plane [2 2 0] of between 0.15 and 0.40.
摘要翻译：具有SiCbeta微晶基团和具有改进的机械特性的高比表面积的颗粒形式的催化剂载体。载体的孔隙度在0.001至1μm之间，载体的结晶度由以下决定：衍射X射线的半峰全宽（对应于SiCbeta微晶的平面[2 2 0]）为0.15 和0.60°，布拉格定律的角度2θ; 和对应于平面[2 2 0]的峰值的积分强度归一化的方向[1 0]的二维峰值高度[1 0]在0.15和0.40之间。

3. 发明授权

US07858063B2 High purity metallurgical silicon and method for preparing same 有权
标题翻译：高纯度冶金硅及其制备方法
公开(公告)号：US07858063B2
公开(公告)日：2010-12-28
申请号：US10484311
申请日：2002-07-22
申请人： Gerard Baluais , Yves Caratini , Yves Delannoy , Christian Trassy
发明人： Gerard Baluais , Yves Caratini , Yves Delannoy , Christian Trassy
IPC分类号： C01B33/02
CPC分类号： C01B33/037 , H01L31/1804 , Y02P70/521
摘要： The invention concerns a silicon designed in particular for making solar cells containing a total of impurities ranging between 100 and 400 ppm, a boron content ranging between 0.5 and 3 ppm, a phosphorus/boron content ratio ranging between 1 and 3, and a content of metal elements ranging between 30 and 300 ppm. The invention also concerns a method for making such a silicon from an oxygen- or chorine-refined metallurgical silicon containing at least 500 ppm of metal elements, and comprising: refusion under neutral atmosphere of the refined silicon, in an electric furnace equipped with a hot crucible; transferring the molten silicon, to provide a plasma refining, in an electric furnace equipped with a hot crucible; plasma refining with as plasma-forming gas a mixture of argon and of at least a gas belonging the group consisting of chlorine, fluorine, HCI and HF; casting under controlled atmosphere in an ingot mold wherein is produced segregated solidification.
摘要翻译：本发明涉及一种特别设计用于制造太阳能电池的硅，该太阳能电池含有总共杂质范围为100-400ppm，硼含量在0.5ppm和3ppm之间，磷/硼含量比范围在1和3之间，金属元素在30和300 ppm之间。本发明还涉及从含有至少500ppm金属元素的氧或氯精炼冶金硅制造这种硅的方法，并且包括：在装有热的电炉中的精制硅的中性气氛下的重熔坩; 在装有热坩埚的电炉中转移熔融硅以提供等离子体精炼; 作为等离子体形成气体的等离子体精炼是氩和至少属于由氯，氟，HCl和HF组成的组的气体的混合物; 在其中生产的分离凝固的锭铸模中在受控气氛下铸造。

4. 发明授权

US07404941B2 Medium purity metallurgical silicon and method for preparing same 有权
标题翻译：中等纯度的冶金硅及其制备方法
公开(公告)号：US07404941B2
公开(公告)日：2008-07-29
申请号：US10484316
申请日：2002-07-22
申请人： Gerard Baluais , Yves Caratini
发明人： Gerard Baluais , Yves Caratini
IPC分类号： C01B33/037 , C01B33/025
CPC分类号： C01B33/037 , H01L31/1804 , Y02P70/521
摘要： The invention concerns a method for producing a medium purity silicon comprising: preparing, by carbothermic reduction of silica in a submerged arc-furnace a silicon with low boron content; refining the liquid silicon with oxygen or chlorine; treating the refined silicon under reduced pressure from 10 to 100 Pa with neutral gas injection; segregated solidification. The invention also concerns a medium purity silicon designed to serve as raw material for making silicon of electronic or voltaic quality, and having (in weight fractions): a total of impurities ranging between 100 and 400 ppm, with the content in metallic elements ranging between 30 and 300 ppm; a boron content from 1 to 10 ppm; a phosphorus/boron ratio ranging between 0.5 and 1.5.
摘要翻译：本发明涉及一种生产中等纯度硅的方法，包括：通过在埋弧炉中碳硅热还原二氧化硅制备低硼含量的硅; 用氧或氯精炼液态硅; 用中性气体注入，在10〜100Pa的减压下处理精制硅; 分离凝固。本发明还涉及一种中等纯度的硅，其被设计成用作制造电子或电子质量的硅的原料，并且具有（以重量计）：总共杂质范围在100和400ppm之间，金属元素的含量介于 30和300 ppm; 硼含量为1〜10ppm; 磷/硼比在0.5和1.5之间。

5. 发明申请

US20050074388A1 Medium purity metallurgical silicon and method for preparing same 有权
标题翻译：中等纯度的冶金硅及其制备方法
公开(公告)号：US20050074388A1
公开(公告)日：2005-04-07
申请号：US10484316
申请日：2002-07-22
申请人： Gerard Baluais , Yves Caratini
发明人： Gerard Baluais , Yves Caratini
IPC分类号： C01B33/037 , H01L31/18
CPC分类号： C01B33/037 , H01L31/1804 , Y02P70/521
摘要： The invention concerns a method for producing a medium purity silicon comprising: preparing, by carbothermic reduction of silica in a submerged arc-furnace a silicon with low boron content; refining the liquid silicon with oxygen or chlorine; treating the refined silicon under reduced pressure from 10 to 100 Pa with neutral gas injection; segregated solidification. The invention also concerns a medium purity silicon designed to serve as raw material for making silicon of electronic or voltaic quality, and having (in weight fractions): a total of impurities ranging between 100 and 400 ppm, with the content in metallic elements ranging between 30 and 300 ppm; a boron content from 1 to 10 ppm; a phosphorus/boron ratio ranging between 0.5 and 1.5.
摘要翻译：本发明涉及一种生产中等纯度硅的方法，包括：通过在埋弧炉中碳硅热还原二氧化硅制备低硼含量的硅; 用氧或氯精炼液态硅; 用中性气体注入，在10〜100Pa的减压下处理精制硅; 分离凝固。本发明还涉及一种中等纯度的硅，其被设计成用作制造电子或电子质量的硅的原料，并且具有（以重量计）：总共杂质范围在100和400ppm之间，金属元素的含量介于 30和300 ppm; 硼含量为1〜10ppm; 磷/硼比在0.5和1.5之间。

6. 发明申请

US20080123715A1 Silicon Refining Installation 审中-公开
标题翻译：硅精炼安装
公开(公告)号：US20080123715A1
公开(公告)日：2008-05-29
申请号：US11628766
申请日：2005-06-07
申请人： Christian Trassy , Yves Delannoy , Erwann Fourmond , Cyrille Ndzogha , Gerard Baluais , Yves Caratini
发明人： Christian Trassy , Yves Delannoy , Erwann Fourmond , Cyrille Ndzogha , Gerard Baluais , Yves Caratini
IPC分类号： C01B33/037
CPC分类号： C01B33/037
摘要： The present invention relates to a silicon refining installation, having a cold sectorized induction crucible, having its internal wall lined with a refractory material.
摘要翻译：本发明涉及一种硅精炼装置，其具有冷扇形诱导坩埚，其内壁衬有耐火材料。

7. 发明申请

US20050053539A1 High purity metallurgical silicon and method for preparing same 有权
标题翻译：高纯度冶金硅及其制备方法
公开(公告)号：US20050053539A1
公开(公告)日：2005-03-10
申请号：US10484311
申请日：2002-07-22
申请人： Gerard Baluais , Yves Caratini , Yves Delannoy , Christian Trassy
发明人： Gerard Baluais , Yves Caratini , Yves Delannoy , Christian Trassy
IPC分类号： C01B33/037 , H01L31/18 , C01B33/02
CPC分类号： C01B33/037 , H01L31/1804 , Y02P70/521
摘要： The invention concerns a silicon designed in particular for making solar cells containing a total of impurities ranging between 100 and 400 ppm, a boron content ranging between 0.5 and 3 ppm, a phosphorus/boron content ratio ranging between 1 and 3, and a content of metal elements ranging between 30 and 300 ppm. The invention also concerns a method for making such a silicon from an oxygen- or chorine-refined metallurgical silicon containing at least 500 ppm of metal elements, and comprising: refusion under neutral atmosphere of the refined silicon, in an electric furnace equipped with a hot crucible; transferring the molten silicon, to provide a plasma refining, in an electric furnace equipped with a hot crucible; plasma refining with as plasma-forming gas a mixture of argon and of at least a gas belonging the group consisting of chlorine, fluorine, HCI and HF; casting under controlled atmosphere in an ingot mould wherein is produced segregated solidification.
摘要翻译：本发明涉及一种特别用于制造太阳能电池的硅，该太阳能电池含有总共杂质范围为100-400ppm，硼含量在0.5ppm和3ppm之间，磷/硼含量比范围在1和3之间，金属元素在30和300 ppm之间。本发明还涉及从含有至少500ppm金属元素的氧或氯精炼冶金硅制造这种硅的方法，并且包括：在装有热的电炉中的精制硅的中性气氛下的重熔坩; 在装有热坩埚的电炉中转移熔融硅以提供等离子体精炼; 作为等离子体形成气体的等离子体精炼是氩和至少属于由氯，氟，HCl和HF组成的组的气体的混合物; 在其中生产的分离凝固的锭铸模中在受控气氛下铸造。

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