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    • 1. 发明申请
    • High voltage semiconductor device having a lateral channel and enhanced gate-to-drain separation
    • 具有侧向通道和增强的栅 - 漏分离的高电压半导体器件
    • US20070145417A1
    • 2007-06-28
    • US11711340
    • 2007-02-27
    • Berinder BrarWonill HaMariam SadakaChanh Nguyen
    • Berinder BrarWonill HaMariam SadakaChanh Nguyen
    • H01L29/76
    • H01L29/66462H01L29/4175H01L29/41766H01L29/7785
    • A semiconductor device having a lateral channel with contacts on opposing surfaces thereof. The semiconductor device includes a conductive substrate having a source contact covering a substantial portion of a bottom surface thereof. The semiconductor device also includes an isolation layer above the conductive substrate, a lateral channel above the isolation layer and a drain contact above the lateral channel. The semiconductor device further includes a gate located in a gate recess interposed between the lateral channel and the drain contact and a drain formed by at least one source/drain contact layer interposed between the lateral channel and the drain contact. The drain is offset on one side of the gate by a gate-to-drain separation distance. The semiconductor device still further includes an interconnect that connects the lateral channel to the conductive substrate operable to provide a low resistance coupling between the source contact and the lateral channel.
    • 一种具有在其相对表面上具有触点的横向通道的半导体器件。 半导体器件包括具有覆盖其底表面的大部分的源极接触的导电基底。 半导体器件还包括在导电衬底之上的隔离层,隔离层上方的横向沟道和横向沟道上方的漏极接触。 所述半导体器件还包括位于所述横向沟道和所述漏极接触之间的栅极凹槽中的栅极和由介于所述侧向沟道和所述漏极接触之间的至少一个源极/漏极接触层形成的漏极。 漏极在栅极到漏极间隔距离的一侧偏移。 半导体器件还包括将横向沟道连接到导电衬底的互连,其可操作以在源极接触和侧向通道之间提供低电阻耦合。
    • 3. 发明申请
    • Semiconductor Device Including a Lateral Field-Effect Transistor and Schottky Diode
    • 包括横向场效应晶体管和肖特基二极管的半导体器件
    • US20080048174A1
    • 2008-02-28
    • US11866270
    • 2007-10-02
    • Mariam SadakaBerinder BrarWonill HaChanh Nguyen
    • Mariam SadakaBerinder BrarWonill HaChanh Nguyen
    • H01L29/15
    • H01L29/7783H01L27/0605H01L27/0629H01L27/0727H01L29/66462H01L29/872
    • A semiconductor device including a lateral field-effect transistor and Schottky diode and method of forming the same. In one embodiment, the lateral field-effect transistor includes a buffer layer having a contact covering a substantial portion of a bottom surface thereof, a lateral channel above the buffer layer, another contact above the lateral channel, and an interconnect that connects the lateral channel to the buffer layer. The semiconductor device also includes a Schottky diode parallel-coupled to the lateral field-effect transistor including a cathode formed from another buffer layer interposed between the buffer layer and the lateral channel, a Schottky interconnect interposed between the another buffer layer and the another contact, and an anode formed on a surface of the Schottky interconnect operable to connect the anode to the another contact. The semiconductor device may also include an isolation layer interposed between the buffer layer and the lateral channel.
    • 包括横向场效应晶体管和肖特基二极管的半导体器件及其形成方法。 在一个实施例中,横向场效应晶体管包括缓冲层,该缓冲层具有覆盖其底表面的大部分的接触,缓冲层上方的横向通道,横向通道上方的另一接触件以及将侧向通道 到缓冲层。 半导体器件还包括并联耦合到横向场效应晶体管的肖特基二极管,该晶体管包括由介于缓冲层和横向沟道之间的另一个缓冲层形成的阴极,插入另一个缓冲层和另一个触点之间的肖特基互连, 以及形成在所述肖特基互连件的表面上的阳极,其可操作以将所述阳极连接到所述另一个触点。 半导体器件还可以包括插入在缓冲层和横向沟道之间的隔离层。
    • 6. 发明申请
    • Semiconductor Device Having Substrate-Driven Field-Effect Transistor and Schottky Diode and Method of Forming the Same
    • 具有基板驱动场效应晶体管和肖特基二极管的半导体器件及其形成方法
    • US20080048219A1
    • 2008-02-28
    • US11876581
    • 2007-10-22
    • Berinder BrarWonill Ha
    • Berinder BrarWonill Ha
    • H01L29/76H01L21/28
    • H01L29/7783H01L27/0605H01L27/0629H01L27/0727H01L29/66462H01L29/872
    • A semiconductor device including a substrate-driven field-effect transistor with a lateral channel and a parallel-coupled Schottky diode, and a method of forming the same. In one embodiment, the substrate-driven field-effect transistor of the semiconductor device includes a conductive substrate having a first contact covering a substantial portion of a bottom surface thereof, and a lateral channel above the conductive substrate. The substrate-driven field-effect transistor also includes a second contact above the lateral channel and an interconnect that connects the lateral channel to the conductive substrate operable to provide a low resistance coupling between the first contact and the lateral channel. The semiconductor device also includes a Schottky diode parallel-coupled to the substrate-driven field-effect transistor. A first and second terminal of the Schottky diode are couplable to the first and second contacts, respectively, of the substrate drive field-effect transistor.
    • 一种包括具有横向沟道和平行耦合肖特基二极管的衬底驱动场效应晶体管的半导体器件及其形成方法。 在一个实施例中,半导体器件的衬底驱动场效应晶体管包括具有覆盖其底表面的大部分的第一触点和导电衬底上方的横向沟道的导电衬底。 衬底驱动场效应晶体管还包括位于横向沟道上方的第二接触件和将横向通道连接到导电衬底的互连件,可操作以在第一接触件和横向通道之间提供低电阻耦合。 半导体器件还包括并联耦合到衬底驱动场效应晶体管的肖特基二极管。 肖特基二极管的第一和第二端子分别耦合到衬底驱动场效应晶体管的第一和第二触点。
    • 7. 发明申请
    • Semiconductor device having an interconnect with sloped walls and method of forming the same
    • 具有与倾斜壁相互连接的半导体器件及其形成方法
    • US20070069286A1
    • 2007-03-29
    • US11236376
    • 2005-09-27
    • Berinder BrarWonill HaJames Vorhaus
    • Berinder BrarWonill HaJames Vorhaus
    • H01L29/76
    • H01L29/41766H01L21/28575
    • A semiconductor device having at least one lateral channel with contacts on opposing surfaces thereof and a method of forming the same. In one embodiment, the semiconductor device includes a conductive substrate having a first contact covering a substantial portion of a bottom surface thereof. The semiconductor device also includes a lateral channel above the conductive substrate. The semiconductor device further includes a second contact above the lateral channel. The semiconductor device still further includes an interconnect having a sloped wall that connects the lateral channel to the conductive substrate. The interconnect is operable to provide a low resistance coupling between the first contact and the lateral channel. In a related but alternative embodiment, the first contact is a source contact and the second contact is a drain contact for the semiconductor device.
    • 一种具有至少一个侧面通道的半导体器件及其相对表面上的触点及其形成方法。 在一个实施例中,半导体器件包括具有覆盖其底表面的实质部分的第一触点的导电衬底。 半导体器件还包括在导电衬底上方的横向沟道。 半导体器件还包括位于横向沟道上方的第二接触。 半导体器件还包括具有将横向沟道连接到导电衬底的倾斜壁的互连。 互连可操作以在第一接触和横向通道之间提供低电阻耦合。 在相关但替代实施例中,第一触点是源触点,第二触点是用于半导体器件的漏极触点。
    • 8. 发明申请
    • Semiconductor device having substrate-driven field-effect transistor and schottky diode and method of forming the same
    • 具有基板驱动场效应晶体管和肖特基二极管的半导体器件及其形成方法
    • US20070045765A1
    • 2007-03-01
    • US11211964
    • 2005-08-25
    • Berinder BrarWonill Ha
    • Berinder BrarWonill Ha
    • H01L29/861H01L21/20
    • H01L29/7783H01L27/0605H01L27/0629H01L27/0727H01L29/66462H01L29/872
    • A semiconductor device including a substrate driven field-effect transistor with a lateral channel and a parallel-coupled Schottky diode, and a method of forming the same. In one embodiment, the substrate driven field-effect transistor of the semiconductor device includes a conductive substrate having a first contact covering a substantial portion of a bottom surface thereof, and a lateral channel above the conductive substrate. The substrate driven field-effect transistor also includes a second contact above the lateral channel and an interconnect that connects the lateral channel to the conductive substrate operable to provide a low resistance coupling between the first contact and the lateral channel. The semiconductor device also includes a Schottky diode parallel-coupled to the substrate driven field-effect transistor. A first and second terminal of the Schottky diode are couplable to the first and second contacts, respectively, of the substrate drive field-effect transistor.
    • 一种包括具有横向沟道的衬底驱动场效应晶体管和并联肖特基二极管的半导体器件及其形成方法。 在一个实施例中,半导体器件的衬底驱动场效应晶体管包括导电衬底,其具有覆盖其底表面的大部分的第一触点和导电衬底上的横向沟道。 衬底驱动场效应晶体管还包括在横向沟道上方的第二接触和将横向通道连接到导电衬底的互连件,可操作以在第一接触件和横向通道之间提供低电阻耦合。 半导体器件还包括并联耦合到衬底驱动场效应晶体管的肖特基二极管。 肖特基二极管的第一和第二端子分别耦合到衬底驱动场效应晶体管的第一和第二触点。
    • 10. 发明申请
    • Semiconductor device having multiple lateral channels and method of forming the same
    • 具有多个横向通道的半导体器件及其形成方法
    • US20060255360A1
    • 2006-11-16
    • US11128623
    • 2005-05-13
    • Berinder BrarWonill Ha
    • Berinder BrarWonill Ha
    • H01L29/74H01L21/332
    • H01L29/7783H01L29/1029H01L29/41766H01L29/66462
    • A semiconductor device having multiple lateral channels with contacts on opposing surfaces thereof and a method of forming the same. In one embodiment, the semiconductor device includes a conductive substrate having a first contact covering a substantial portion of a bottom surface thereof. The semiconductor device also includes a first lateral channel above the conductive substrate and a second lateral channel above the first lateral channel. The semiconductor device further includes a second contact above the second lateral channel. The semiconductor device still further includes an interconnect that connects the first and second lateral channels to the conductive substrate operable to provide a low resistance coupling between the first contact and the first and second lateral channels.
    • 一种半导体器件,具有在其相对表面上具有接触的多个侧向通道及其形成方法。 在一个实施例中,半导体器件包括具有覆盖其底表面的实质部分的第一触点的导电衬底。 半导体器件还包括在导电衬底上方的第一横向沟道和在第一横向沟道上方的第二横向沟道。 半导体器件还包括在第二侧向通道上方的第二接触。 半导体器件还包括将第一和第二横向沟道连接到导电衬底的互连,其可操作以在第一接触和第一和第二横向通道之间提供低电阻耦合。