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    • 1. 发明授权
    • Electronic circuit for generating a stable voltage signal for polarizing during a reading step UPROM memory cells operating at low feed voltage
    • 用于在读取步骤期间产生用于偏振的稳定电压信号的电子电路在低馈电电压下工作的UPROM存储器单元
    • US06204722B1
    • 2001-03-20
    • US09218796
    • 1998-12-21
    • Marco MaccarroneStefano CommodaroMarcelo CarreraAndrea Ghilardelli
    • Marco MaccarroneStefano CommodaroMarcelo CarreraAndrea Ghilardelli
    • G05F110
    • G11C5/147G11C16/30G11C29/789
    • An electronic circuit generates a stable voltage signal for the polarization during a reading step of a UPROM redundancy cell incorporating at least one memory element of EPROM or Flash type, having at least one terminal to be polarized, and MOS transistors which connect such memory element to a low voltage power supply reference. The circuit includes a current mirror structure with a first control branch and a second output branch. The current mirror stricture includes a first series of MOS transistors (M2, M3, M4) in said first branch between the supply reference and a ground; and a second series of transistors (M5, M6, M7) in said second branch. The circuit also includes an input terminal connected to the gate terminal of a transistor of the first series of transistors and an output terminal corresponding to an interconnection node of the second series of transistors. The stable voltage is obtained through a current which passes through at least a pair of transistors of the second series.
    • 电子电路在包含至少一个EPROM或闪存型存储元件的UPROM冗余单元的读取步骤期间产生稳定的电压信号,其具有至少一个要极化的端子,以及将这种存储元件连接到 低压电源参考。 电路包括具有第一控制分支和第二输出分支的电流镜结构。 电流反射镜狭窄包括在供电基准和地之间的所述第一分支中的第一系列MOS晶体管(M2,M3,M4); 以及在所述第二分支中的第二系列晶体管(M5,M6,M7)。 电路还包括连接到第一串联晶体管的晶体管的栅极端子的输入端子和对应于第二串联晶体管的互连节点的输出端子。 通过穿过第二系列的至少一对晶体管的电流获得稳定的电压。
    • 2. 发明授权
    • Switching circuit having an output voltage varying between a reference
voltage and a negative voltage
    • 开关电路具有在参考电压和负电压之间变化的输出电压
    • US6031761A
    • 2000-02-29
    • US275255
    • 1999-03-24
    • Andrea GhilardelliStefano GhezziStefano CommodaroMarco Maccarrone
    • Andrea GhilardelliStefano GhezziStefano CommodaroMarco Maccarrone
    • G11C16/14G11C16/06
    • G11C16/14
    • Switching circuit that receives a supply voltage, a reference voltage, a line adapted to carry a negative voltage and a control signal, the switching circuit capable of providing at an output a voltage alternatively equal to the reference voltage or to the voltage of the line in response to the control signal. The circuit includes a first MOSFET with a first electrode operationally connected to the line, a second electrode operationally connected to the output, and a control electrode, a second MOSFET with a first electrode operationally connected to the reference voltage, a second electrode operationally connected to the output, and a control electrode, and driving circuitry adapted to bring the control electrodes of the first and second MOSFETs respectively to the supply voltage and to the voltage of the line or, alternatively, to the voltage of the line and to the supply voltage, in response to the control signal.
    • 接收电源电压,参考电压,适于承载负电压的线路和控制信号的开关电路,所述开关电路能够在输出端提供交替地等于所述参考电压或所述线路的电压的电压 响应控制信号。 所述电路包括:第一电极,其具有可操作地连接到所述线路的第一电极,可操作地连接到所述输出端的第二电极;以及控制电极,具有可操作地连接到所述参考电压的第一电极的第二MOSFET, 输出和控制电极以及适于将第一和第二MOSFET的控制电极分别连接到电源电压和线路电压的驱动电路,或者替代地将线路的电压和电源电压 响应于控制信号。
    • 4. 发明授权
    • Bidirectional charge pump generating either a positive or negative voltage
    • 双向电荷泵产生正或负电压
    • US06184741B2
    • 2001-02-06
    • US08900165
    • 1997-07-28
    • Andrea GhilardelliGiovanni CampardoJacopo Mulatti
    • Andrea GhilardelliGiovanni CampardoJacopo Mulatti
    • G05F110
    • G11C5/145
    • A charge pump comprises at least one charge pump stage including a first diode having an anode and a cathode, and a capacitor having a first plate connected to the cathode of the diode and a second plate connected to a clock signal that periodically varies between a reference voltage and a supply voltage, the anode of said diode forming a first terminal of the charge pump. The charge pump further comprises a second diode having an anode connected to the cathode of the first diode and a cathode forming a second terminal of the charge pump, first switching means for selectively coupling the first terminal of the charge pump to the voltage supply and second switching means for selectively coupling the second terminal of the charge pump to the reference voltage. The first switching means and the second switching means are respectively closed and open in a first operating condition whereby the second terminal of the charge pump acquires a voltage of the same polarity but higher in absolute value than said supply voltage. The first switching means and the second switching means are respectively open and closed in a second operating condition whereby the first terminal of the charge pump acquires a voltage of opposite polarity with respect to said voltage supply.
    • 电荷泵包括至少一个电荷泵级,其包括具有阳极和阴极的第一二极管,以及具有连接到二极管的阴极的第一板的电容器和连接到时钟信号的第二板,所述时钟信号周期性地在参考 电压和电源电压,所述二极管的阳极形成电荷泵的第一端子。 电荷泵还包括具有连接到第一二极管的阴极的阳极和形成电荷泵的第二端子的阴极的第二二极管,用于选择性地将电荷泵的第一端子耦合到电压源的第一开关装置和第二二极管 用于选择性地将电荷泵的第二端子耦合到参考电压的开关装置。 第一开关装置和第二开关装置分别在第一操作条件下闭合和断开,由此电荷泵的第二端子获得与所述电源电压相同的极性但绝对值高的电压。 第一开关装置和第二开关装置分别在第二操作条件下打开和关闭,由此电荷泵的第一端子获得相对于所述电压源的极性相反的电压。
    • 8. 发明授权
    • Sensing circuitry for reading and verifying the contents of electrically
programmable/erasable non-volatile memory cells
    • 用于读取和验证电可编程/可擦除非易失性存储单元的内容的感测电路
    • US6055187A
    • 2000-04-25
    • US209319
    • 1998-12-09
    • Marco DallaboraCorrado VillaAndrea Ghilardelli
    • Marco DallaboraCorrado VillaAndrea Ghilardelli
    • G11C7/06G11C7/14G11C16/28G11C16/06
    • G11C7/062G11C16/28G11C7/14
    • A sense amplifier circuit for reading and verifying the contents of non-volatile memory cells in a semiconductor integrated device including a memory matrix of electrically programmable and erasable cells. The circuit includes a sense amplifier which has a first input connected to a reference load column incorporating a reference cell, and a second input connected to a second matrix load column incorporating a cell of the memory matrix. The circuit also includes a small matrix of reference cells connected, in parallel with one another, in the reference load column. Also provided is a double current mirror having a first mirror column which is connected to a node in the reference load column connected to the first input, and a second mirror column coupled to the second matrix load column to locally replicate, on the second mirror column, the electric potential at the node during a load equalizing step.
    • 一种用于读取和验证包括电可编程和可擦除单元的存储矩阵的半导体集成器件中的非易失性存储单元的内容的读出放大器电路。 该电路包括一个读出放大器,该读出放大器的第一输入端连接到一个结合有参考单元的参考负载列,以及一个第二输入端,连接到一个结合存储矩阵单元的第二矩阵负载列。 电路还包括在参考负载列中彼此并联连接的参考单元的小矩阵。 还提供了双电流镜,其具有连接到连接到第一输入的参考负载列中的节点的第一反射镜列和耦合到第二矩阵负载列的第二反射镜列,以在第二反射镜列上局部复制 ,负载平衡步骤期间节点处的电位。
    • 9. 发明授权
    • Methods and devices for determining sensing voltages
    • 用于确定感应电压的方法和装置
    • US08503242B2
    • 2013-08-06
    • US13086984
    • 2011-04-14
    • Andrea Ghilardelli
    • Andrea Ghilardelli
    • G11C16/04
    • G11C16/26G11C16/3418
    • The present disclosure includes methods and devices for determining sensing voltages. One such method includes comparing data associated with a number of template distributions to data associated with a first threshold voltage distribution and a second threshold voltage distribution associated with a number of memory cells programmed to particular adjacent program states, determining an intersection of the first and second threshold voltage distributions based on a template distribution of the number template distributions which most closely compares to the first and second threshold voltage distributions, and using the determined intersection to determine a sensing voltage used to sense the number of memory cells programmed to the particular adjacent program states.
    • 本公开包括用于确定感测电压的方法和装置。 一种这样的方法包括将与多个模板分布相关联的数据与与第一阈值电压分布相关联的数据和与编程到特定相邻程序状态的多个存储器单元相关联的第二阈值电压分布进行比较,确定第一和第二 基于与第一和第二阈值电压分布最接近地比较的数字模板分布的模板分布的阈值电压分布,以及使用所确定的交叉点来确定用于感测编程到特定相邻程序的存储器单元的数量的感测电压 状态。