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1. 发明申请

US20050252447A1 Gas blocker plate for improved deposition 审中-公开
标题翻译：阻气板用于改善沉积
公开(公告)号：US20050252447A1
公开(公告)日：2005-11-17
申请号：US10843839
申请日：2004-05-11
申请人： Maosheng Zhao , Juan Rocha-Alvarez
发明人： Maosheng Zhao , Juan Rocha-Alvarez
IPC分类号： C23C16/00 , H01J37/32
CPC分类号： H01J37/3244 , C23C16/45565
摘要： Embodiments of the present invention are directed to a blocker for a gas distribution system for use in semiconductor deposition apparatus. The gas distribution system includes a faceplate having a plurality of faceplate apertures to distribute a gas flow onto a surface of a substrate disposed downstream of the faceplate for film deposition on the substrate; and a blocker disposed upstream of the faceplate. The blocker includes a generally planar blocker surface facing the faceplate and a side wall disposed around a periphery of the blocker surface. The blocker surface includes a plurality of blocker holes to permit gas flow therethrough to the faceplate. The side wall is disposed near an edge of the faceplate and includes a plurality of side apertures to permit gas flow therethrough to the faceplate.
摘要翻译：本发明的实施例涉及一种用于半导体沉积设备中的气体分配系统的阻断器。气体分配系统包括具有多个面板孔的面板，以将气流分布到设置在面板下游的衬底的表面上，用于在衬底上沉积膜; 以及设置在面板上游的阻挡器。阻挡器包括面向面板的大致平面的阻挡面，以及围绕阻挡面的周边设置的侧壁。阻挡表面包括多个阻挡孔，以允许气体流过面板。侧壁设置在面板的边缘附近，并且包括多个侧孔，以允许气体流过面板。

2. 发明申请

US20060225767A1 METHOD AND APPARATUS FOR CLEANING A CVD CHAMBER 失效
公开(公告)号：US20060225767A1
公开(公告)日：2006-10-12
申请号：US11424959
申请日：2006-06-19
申请人： Maosheng Zhao , Juan Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao Lim , Shankar Venkataraman , Ju-Hyung Lee
发明人： Maosheng Zhao , Juan Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao Lim , Shankar Venkataraman , Ju-Hyung Lee
IPC分类号： B08B6/00 , B08B9/00
CPC分类号： C23C16/4405 , C23C16/458 , C23C16/46 , H01J37/32082 , H01J37/32862 , H01L21/67103
摘要： The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.

3. 发明申请

US20060231205A1 METHOD AND APPARATUS FOR CLEANING A CVD CHAMBER 失效
公开(公告)号：US20060231205A1
公开(公告)日：2006-10-19
申请号：US11426154
申请日：2006-06-23
申请人： Maosheng Zhao , Juan Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao Lim , Shankar Venkataraman , Ju-Hyung Lee
发明人： Maosheng Zhao , Juan Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao Lim , Shankar Venkataraman , Ju-Hyung Lee
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： C23C16/4405 , C23C16/458 , C23C16/46 , H01J37/32082 , H01J37/32862 , H01L21/67103
摘要： The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.

4. 发明申请

US20050126484A1 Edge flow faceplate for improvement of CVD film properties 审中-公开
标题翻译：边缘流动面板，用于改善CVD膜性能
公开(公告)号：US20050126484A1
公开(公告)日：2005-06-16
申请号：US11013124
申请日：2004-12-15
申请人： Maosheng Zhao , Lun Tsuei , Juan Rocha-Alvarez , Tom Cho
发明人： Maosheng Zhao , Lun Tsuei , Juan Rocha-Alvarez , Tom Cho
IPC分类号： C23C16/00 , C23C16/44 , C23C16/455 , C23C16/509 , H01J37/32 , H01L21/00
CPC分类号： C23C16/45565 , C23C16/5096 , H01J37/3244
摘要： Embodiments in accordance with the present invention relate to apparatuses and methods distributing processing gases over a workpiece surface. In accordance with one embodiment of the present invention, process gases are flowed to a surface of a semiconductor wafer through a substantially circular gas distribution showerhead defining a plurality of holes. A first set of holes located at the center of the faceplate, are arranged in a non-concentric manner not exhibiting radial symmetry. This asymmetric arrangement achieves maximum density of holes and gases distributed therefrom. To compensate for nonuniform exposure of the wafer edges to gases flowed from the first hole set, the faceplate periphery defines a second set of holes arranged concentrically and exhibiting radial symmetry. Processing substrates with gases flowed through the first and second sets of holes results in formation of films exhibiting enhanced uniformity across center-to-edge regions.
摘要翻译：根据本发明的实施例涉及在工件表面上分配处理气体的装置和方法。根据本发明的一个实施例，工艺气体通过限定多个孔的基本圆形的气体分配喷头流向半导体晶片的表面。位于面板中心的第一组孔布置成不呈径向对称的非同心方式。这种不对称布置实现了从其分布的孔和气体的最大密度。为了补偿晶片边缘对从第一孔组流出的气体的不均匀曝光，面板周边限定了同心布置且呈径向对称的第二组孔。处理具有流经第一和第二组孔的气体的衬底导致形成在中心到边缘区域上具有增强的均匀性的膜。

5. 发明授权

US08449678B2 Combinatorial process system 有权
公开(公告)号：US08449678B2
公开(公告)日：2013-05-28
申请号：US12028643
申请日：2008-02-08
申请人： Rick Endo , Kurt Weiner , Indranil De , James Tsung , Maosheng Zhao , Jeremy Cheng
发明人： Rick Endo , Kurt Weiner , Indranil De , James Tsung , Maosheng Zhao , Jeremy Cheng
IPC分类号： H01L21/31 , C23C16/458 , C23C16/50 , B65H1/00
CPC分类号： H01L21/32051 , B01J19/0046 , B01J2219/0043 , B01J2219/00536 , B01J2219/00596 , B01J2219/00659 , B01J2219/00745 , B01J2219/00756 , C23C14/042 , C23C14/50 , C23C14/548 , C23C16/45544 , H01L21/67005 , H01L21/6719
摘要： A combinatorial processing chamber is provided. The combinatorial processing chamber is configured to isolate a radial portion of a rotatable substrate support, which in turn is configured to support a substrate. The chamber includes a plurality of clusters process heads in one embodiment. An insert having a base plate disposed between the substrate support and the process heads defines a confinement region for a deposition process in one embodiment. The base plate has an opening to enable access of the deposition material to the substrate. Through rotation of the substrate and movement of the opening, multiple regions of the substrate are accessible for performing combinatorial processing on a single substrate.

6. 发明申请

US20090068849A1 MULTI-REGION PROCESSING SYSTEM AND HEADS 有权
标题翻译：多区域处理系统和头
公开(公告)号：US20090068849A1
公开(公告)日：2009-03-12
申请号：US11965689
申请日：2007-12-27
申请人： Rick Endo , Kurt Weiner , Indranil De , James Tsung , Maosheng Zhao
发明人： Rick Endo , Kurt Weiner , Indranil De , James Tsung , Maosheng Zhao
IPC分类号： H01L21/31 , C23C16/00
CPC分类号： C23C16/45565 , B05B14/30 , B05B16/80 , B05D1/10 , B05D1/62 , C23C16/4412 , C23C16/45589 , C23C16/4584 , C23C16/4585 , C23C16/4587 , C23C16/50 , Y10S438/942
摘要： The various embodiments of the invention provide for relative movement of the substrate and a process head to access the entire wafer in a minimal space to conduct combinatorial processing on various regions of the substrate. The heads enable site isolated processing within the chamber described and method of using the same are described.
摘要翻译：本发明的各种实施例提供了基板和工艺头在最小空间中访问整个晶片的相对运动，以在基板的各个区域上进行组合处理。这些头使得所描述的室内的现场隔离处理和使用其的方法被描述。

7. 发明授权

US08387563B2 Combinatorial process system 失效
公开(公告)号：US08387563B2
公开(公告)日：2013-03-05
申请号：US13372729
申请日：2012-02-14
申请人： Rick Endo , Jeremy Cheng , Indranil De , James Tsung , Kurt Weiner , Maosheng Zhao
发明人： Rick Endo , Jeremy Cheng , Indranil De , James Tsung , Kurt Weiner , Maosheng Zhao
IPC分类号： H01L21/31 , C23C16/458 , C23C16/50 , B65H1/00
CPC分类号： H01L21/32051 , B01J19/0046 , B01J2219/0043 , B01J2219/00536 , B01J2219/00596 , B01J2219/00659 , B01J2219/00745 , B01J2219/00756 , C23C14/042 , C23C14/50 , C23C14/548 , C23C16/45544 , H01L21/67005 , H01L21/6719
摘要： A combinatorial processing chamber is provided. The combinatorial processing chamber is configured to isolate a radial portion of a rotatable substrate support, which in turn is configured to support a substrate. The chamber includes a plurality of clusters process heads in one embodiment. An insert having a base plate disposed between the substrate support and the process heads defines a confinement region for a deposition process in one embodiment. The base plate has an opening to enable access of the deposition material to the substrate. Through rotation of the substrate and movement of the opening, multiple regions of the substrate are accessible for performing combinatorial processing on a single substrate.

8. 发明申请

US20090061087A1 COMBINATORIAL PROCESS SYSTEM 有权
公开(公告)号：US20090061087A1
公开(公告)日：2009-03-05
申请号：US12028643
申请日：2008-02-08
申请人： Rick Endo , Kurt Weiner , Indranil De , James Tsung , Maosheng Zhao , Jeremy Cheng
发明人： Rick Endo , Kurt Weiner , Indranil De , James Tsung , Maosheng Zhao , Jeremy Cheng
IPC分类号： C23C16/00
CPC分类号： H01L21/32051 , B01J19/0046 , B01J2219/0043 , B01J2219/00536 , B01J2219/00596 , B01J2219/00659 , B01J2219/00745 , B01J2219/00756 , C23C14/042 , C23C14/50 , C23C14/548 , C23C16/45544 , H01L21/67005 , H01L21/6719
摘要： A combinatorial processing chamber is provided. The combinatorial processing chamber is configured to isolate a radial portion of a rotatable substrate support, which in turn is configured to support a substrate. The chamber includes a plurality of clusters process heads in one embodiment. An insert having a base plate disposed between the substrate support and the process heads defines a confinement region for a deposition process in one embodiment. The base plate has an opening to enable access of the deposition material to the substrate. Through rotation of the substrate and movement of the opening, multiple regions of the substrate are accessible for performing combinatorial processing on a single substrate.

9. 发明授权

US06932092B2 Method for cleaning plasma enhanced chemical vapor deposition chamber using very high frequency energy 失效
标题翻译：使用非常高频能量清洗等离子体增强化学气相沉积室的方法
公开(公告)号：US06932092B2
公开(公告)日：2005-08-23
申请号：US10302350
申请日：2002-11-22
申请人： Juan Carlos Rocha-Alvarez , Maosheng Zhao , Shankar Venkataraman
发明人： Juan Carlos Rocha-Alvarez , Maosheng Zhao , Shankar Venkataraman
IPC分类号： B08B6/00 , B08B7/00 , C23C16/44 , C25F1/00
CPC分类号： H01J37/32862 , B08B7/0035 , C23C16/4405 , Y10S134/902 , Y10S438/905
摘要： A method for cleaning a plasma enhanced chemical vapor deposition chamber. The method includes introducing a cleaning gas into the plasma enhanced chemical vapor deposition chamber, forming a plasma using a very high frequency (VHF) power having a frequency in a range from about 20 MHz to about 100 MHz, and reacting the cleaning gas with deposits within the chamber in the presence of the plasma.
摘要翻译：一种用于清洁等离子体增强化学气相沉积室的方法。该方法包括将清洁气体引入等离子体增强化学气相沉积室中，使用频率在约20MHz至约100MHz范围内的非常高频（VHF）功率形成等离子体，并使清洗气体与沉积物在等离子体存在下的室内。

10. 发明申请

US20120142197A1 COMBINATORIAL PROCESS SYSTEM 失效
公开(公告)号：US20120142197A1
公开(公告)日：2012-06-07
申请号：US13372729
申请日：2012-02-14
申请人： Rick Endo , Kurt Weiner , Indranil De , James Tsung , Maosheng Zhao , Jeremy Cheng
发明人： Rick Endo , Kurt Weiner , Indranil De , James Tsung , Maosheng Zhao , Jeremy Cheng
IPC分类号： H01L21/31 , C23C16/458 , C23C16/50 , B65H1/00
CPC分类号： H01L21/32051 , B01J19/0046 , B01J2219/0043 , B01J2219/00536 , B01J2219/00596 , B01J2219/00659 , B01J2219/00745 , B01J2219/00756 , C23C14/042 , C23C14/50 , C23C14/548 , C23C16/45544 , H01L21/67005 , H01L21/6719
摘要： A combinatorial processing chamber is provided. The combinatorial processing chamber is configured to isolate a radial portion of a rotatable substrate support, which in turn is configured to support a substrate. The chamber includes a plurality of clusters process heads in one embodiment. An insert having a base plate disposed between the substrate support and the process heads defines a confinement region for a deposition process in one embodiment. The base plate has an opening to enable access of the deposition material to the substrate. Through rotation of the substrate and movement of the opening, multiple regions of the substrate are accessible for performing combinatorial processing on a single substrate.

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