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    • 10. 发明申请
    • PINNING LAYER FOR LOW RESISTIVITY N-TYPE SOURCE DRAIN OHMIC CONTACTS
    • 密封层用于低电阻N型源漏管OHMIC接触
    • US20080017891A1
    • 2008-01-24
    • US11480667
    • 2006-06-30
    • Suman DattaJack T. KavalierosRobert S. ChauMark L. Doczy
    • Suman DattaJack T. KavalierosRobert S. ChauMark L. Doczy
    • H01L29/76H01L29/745
    • H01L29/0847H01L21/28525H01L29/7833
    • A system or apparatus including an N-type transistor structure including a gate electrode formed on a substrate and source and drain regions formed in the substrate; a contact to the source region; and a pinning layer disposed between the source region and the first contact and defining an interface between the pinning layer and the source region, wherein the pinning layer has donor-type surface states in a conduction band. A method including forming a transistor structure including a gate electrode on a substrate and source and drain regions formed in the substrate; depositing a pinning layer having donor-type surface states on the source and drain regions such that an interface is defined between the pinning layer and the respective one of the source and drain regions; and forming a first contact to the source region and a second contact to the drain region.
    • 一种包括N型晶体管结构的系统或装置,包括形成在衬底上的栅电极和形成在衬底中的源区和漏区; 与源区的联系; 以及钉扎层,其设置在所述源区域和所述第一触点之间并且限定所述钉扎层和所述源区域之间的界面,其中所述钉扎层在导带中具有施主型表面状态。 一种包括在衬底上形成包括栅电极的晶体管结构和形成在衬底中的源极和漏极区的方法; 在源极和漏极区域上沉积具有施主型表面状态的钉扎层,使得在钉扎层与源极和漏极区域中的相应一个之间界定界面; 以及向所述源极区域形成第一接触和向所述漏极区域形成第二接触。