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1. 发明申请

US20180309264A1 LOW SWAP TWO-PHASE COOLED DIODE LASER PACKAGE 审中-公开
公开(公告)号：US20180309264A1
公开(公告)日：2018-10-25
申请号：US15961750
申请日：2018-04-24
申请人： Manoj Kanskar , Mark DeFranza
发明人： Manoj Kanskar , Mark DeFranza
IPC分类号： H01S5/024 , H01S5/00
CPC分类号： H01S5/02423 , H01S5/005 , H01S5/0071 , H01S5/02216 , H01S5/02252 , H01S5/02284 , H01S5/02469 , H01S5/02492 , H01S5/4012 , H01S5/4056
摘要： Apparatus include a conductive block including a base surface and a plurality of parallel stepped surfaces opposite the base surface and defining respective mounting surfaces situated to receive respective laser diodes having respective thermal paths defining a common thermal path distance from the mounting surfaces to the base surface, and a two-phase cooling unit including a coupling surface attached to the base surface of the conductive block and wherein the two-phase cooling unit is situated to conduct heat generated through the emission of laser beams from the laser diodes along the thermal paths.

2. 发明申请

US20190252863A1 DIODE LASER APPARATUS WITH FAC LENS OUT-OF-PLANE BEAM STEERING 审中-公开
公开(公告)号：US20190252863A1
公开(公告)日：2019-08-15
申请号：US16269387
申请日：2019-02-06
申请人： Zhigang Chen , Manoj Kanskar , Shuang Li , Jim Zhang , Mark DeFranza , David Martin Hemenway , Eric Martin , Jay Small
发明人： Zhigang Chen , Manoj Kanskar , Shuang Li , Jim Zhang , Mark DeFranza , David Martin Hemenway , Eric Martin , Jay Small
IPC分类号： H01S5/40 , H01S5/022
摘要： Apparatus include a first laser diode situated to emit a beam from an exit facet along an optical axis, the beam as emitted having perpendicular fast and slow axes perpendicular to the optical axis, a first fast axis collimator (FAC) optically coupled to the beam as emitted from the exit facet and configured to direct the beam along a redirected beam axis having a non-zero angle with respect to the optical axis of the first laser diode, a second laser diode situated to emit a beam from an exit facet of the second laser diode along an optical axis parallel to the optical axis of the first laser diode and with a slow axis in a common plane with the slow axis of the first laser diode, and a second fast axis collimator (FAC) optically coupled to the beam as emitted from the exit facet of the second laser diode and configured to direct the beam along a redirected beam axis having a non-zero angle with respect to the optical axis of the second laser diode.

3. 发明授权

US07596159B2 Semiconductor laser diode 有权
标题翻译：半导体激光二极管
公开(公告)号：US07596159B2
公开(公告)日：2009-09-29
申请号：US11664872
申请日：2005-10-11
申请人： Manoj Kanskar , Thomas Lester Earles , Eric Warren Stiers
发明人： Manoj Kanskar , Thomas Lester Earles , Eric Warren Stiers
IPC分类号： H01S5/00
CPC分类号： H01S5/34 , B82Y20/00 , H01S5/20 , H01S5/2009 , H01S5/32
摘要： A semiconductor laser diode comprises a p-n junction. The p-n junction comprises a substrate, an n-type semiconductor layer, a p-type semiconductor layer, and a quantum well. The quantum well is disposed between the n-type semiconductor layer and the p-type semiconductor layer. The substrate is formed from a first material system, the n-type semiconductor layer is formed from a second material system, the p-type semiconductor layer is formed from a third material system, and the quantum well is formed from a fourth material system. The second material system is different from the third material system. The second material system and the third material system are selected such that there is an increase in the rate of recombinations of the electrons from the n-type semiconductor layer and the holes from the p-type semiconductor layer in the quantum well. This results in a lower turn-on voltage for the semiconductor laser diode.
摘要翻译：半导体激光二极管包括p-n结。 p-n结包括衬底，n型半导体层，p型半导体层和量子阱。量子阱设置在n型半导体层和p型半导体层之间。基板由第一材料体系形成，n型半导体层由第二材料体系形成，p型半导体层由第三材料体系形成，量子阱由第四材料体系形成。第二种材料体系与第三种材料体系不同。选择第二材料系统和第三材料系统，使得来自n型半导体层的电子和来自量子阱中的p型半导体层的空穴的复合速率增加。这导致半导体激光二极管的较低的导通电压。

4. 发明申请

US20130089115A1 High Power Semiconductor Laser with Phase-Matching Optical Element 有权
标题翻译：具有相位匹配光学元件的大功率半导体激光器
公开(公告)号：US20130089115A1
公开(公告)日：2013-04-11
申请号：US13624537
申请日：2012-09-21
申请人： Manoj Kanskar
发明人： Manoj Kanskar
IPC分类号： H01S5/34 , H01S5/026 , H01S5/187
CPC分类号： H01S5/1014 , H01S5/0287 , H01S5/1085 , H01S5/12 , H01S5/1203 , H01S5/22 , H01S2301/166
摘要： A semiconductor laser that includes a single mode semiconductor laser coupled to a flared power amplifier is provided, the device including an internal or an external optical element that reinforces the curved wave front of the flared section of the device through phase-matching. By reinforcing the curved wave front via phase-matching, the device is less susceptible to thermal and gain-index coupled perturbations, even at high output powers, resulting in higher beam quality. Exemplary phase-matching optical elements include a grating integrated into the flared amplifier section; an intra-cavity, externally positioned binary optical element; and an intra-cavity, externally positioned cylindrically curved optical element.
摘要翻译：提供了包括耦合到扩口功率放大器的单模半导体激光器的半导体激光器，该器件包括通过相位匹配来加强器件的扩口部分的弯曲波前的内部或外部光学元件。通过相位匹配对弯曲波前进行加强，即使在高输出功率下，器件也不易受到热和增益折射率的耦合扰动的影响，从而导致更高的光束质量。示例性相位匹配光学元件包括集成到扩张放大器部分中的光栅; 腔内，外部定位的二进制光学元件; 以及腔内，外部定位的圆柱形弯曲光学元件。

5. 发明授权

US09166368B2 High power semiconductor laser with phase-matching optical element 有权
标题翻译：具有相位匹配光学元件的大功率半导体激光器
公开(公告)号：US09166368B2
公开(公告)日：2015-10-20
申请号：US13624537
申请日：2012-09-21
申请人： Manoj Kanskar
发明人： Manoj Kanskar
IPC分类号： H01S5/10 , H01S5/12 , H01S5/028 , H01S5/22
CPC分类号： H01S5/1014 , H01S5/0287 , H01S5/1085 , H01S5/12 , H01S5/1203 , H01S5/22 , H01S2301/166
摘要： A semiconductor laser that includes a single mode semiconductor laser coupled to a flared power amplifier is provided, the device including an internal or an external optical element that reinforces the curved wave front of the flared section of the device through phase-matching. By reinforcing the curved wave front via phase-matching, the device is less susceptible to thermal and gain-index coupled perturbations, even at high output powers, resulting in higher beam quality. Exemplary phase-matching optical elements include a grating integrated into the flared amplifier section; an intra-cavity, externally positioned binary optical element; and an intra-cavity, externally positioned cylindrically curved optical element.
摘要翻译：提供了包括耦合到扩口功率放大器的单模半导体激光器的半导体激光器，该器件包括通过相位匹配来加强器件的扩口部分的弯曲波前的内部或外部光学元件。通过相位匹配对弯曲波前进行加强，即使在高输出功率下，器件也不易受到热和增益折射率的耦合扰动的影响，从而导致更高的光束质量。示例性相位匹配光学元件包括集成到扩张放大器部分中的光栅; 腔内，外部定位的二进制光学元件; 以及腔内，外部定位的圆柱形弯曲光学元件。

6. 发明申请

US20180358777A1 LOW DIVERGENCE HIGH BRIGHTNESS BROAD AREA LASERS 审中-公开
公开(公告)号：US20180358777A1
公开(公告)日：2018-12-13
申请号：US16001734
申请日：2018-06-06
申请人： Zhigang Chen , Manoj Kanskar
发明人： Zhigang Chen , Manoj Kanskar
IPC分类号： H01S5/026 , G02B6/122 , G02B27/09
CPC分类号： H01S5/026 , G02B6/122 , G02B27/0977 , G02B2006/12104
摘要： Apparatus comprise a semiconductor waveguide extending along a longitudinal axis and including a first waveguide section and a second waveguide section, wherein a lateral refractive index difference defining the semiconductor waveguide is larger for the first waveguide section than for the second waveguide section, and an output facet situated on the longitudinal axis of the semiconductor waveguide so as to emit a laser beam propagating in the semiconductor waveguide, wherein the first waveguide section is situated between the second waveguide section and the output facet and wherein the lateral refractive index difference suppresses emission of higher order transverse modes in the laser beam emitted by the output facet.

7. 发明申请

US20110116523A1 METHOD OF BEAM FORMATTING SE-DFB LASER ARRAY 审中-公开
标题翻译：光束形成SE-DFB激光阵列的方法
公开(公告)号：US20110116523A1
公开(公告)日：2011-05-19
申请号：US12880635
申请日：2010-09-13
申请人： Manoj Kanskar , Yan Xiao
发明人： Manoj Kanskar , Yan Xiao
IPC分类号： H01S3/00 , H01S3/0941
CPC分类号： H01S5/42 , G02B19/0014 , G02B19/0028 , G02B19/0057 , G02B27/0966 , H01S5/005 , H01S5/02284 , H01S5/12 , H01S5/4012
摘要： The present invention provides a method of fabricating a beam formatting diode laser using a surface-emitting distributed feedback (SE-DFB) laser array (SELA), instead of edge-emitting diodes that provides a brighter diode and results in simple and few optical components to reduce the complexity and cost of solid-state laser pump modules and direct-diode applications.
摘要翻译：本发明提供了一种使用表面发射分布反馈（SE-DFB）激光阵列（SELA）制造光束格式化二极管激光器的方法，而不是提供更亮二极管的边缘发光二极管并且导致简单且少量的光学部件以降低固态激光泵模块和直流二极管应用的复杂性和成本。

8. 发明申请

US20080212635A1 HIGH EFFICIENCY DISTRIBUTED FEEDBACK (DFB) LASER WITH LOW-DUTY CYCLE GRATING 审中-公开
标题翻译：高效率分布式反馈（DFB）低功率周期激光
公开(公告)号：US20080212635A1
公开(公告)日：2008-09-04
申请号：US12036809
申请日：2008-02-25
申请人： Manoj Kanskar , Yiping He , Steve H. Macomber
发明人： Manoj Kanskar , Yiping He , Steve H. Macomber
IPC分类号： H01S5/00 , H01L33/00
CPC分类号： H01S5/12 , B82Y20/00 , H01S5/0287 , H01S5/1039 , H01S5/1203 , H01S5/187 , H01S5/34313
摘要： The invention provides a grating for a distributed feedback laser having decreased diffraction loss with reduced +/−1 order diffraction and scattering loss resulting from the reduced imperfections in the grating fabrication. In various embodiments, the grating has a low duty cycle wherein the ratio of the length of the low-index portion ‘a’ to the length of the pitch of the grating ‘b’ is less than 0.5. Further, in some preferred embodiments, the invention includes a laser, the laser comprising a distributed feedback laser wherein the laser includes a grating having less diffraction and less scattering loss. In various exemplary embodiments, the grating is further a partial grating, thereby providing increased efficiency resulting from a decrease in first-order diffraction loss due to the grating being separated from the front and rear facets and in some exemplary embodiments being situated at the area of lowest electric filed.
摘要翻译：本发明提供了一种用于分布式反馈激光器的光栅，其具有减小的衍射损耗，减少了+/- 1次衍射和由光栅制造中的缺陷导致的散射损耗。在各种实施例中，光栅具有低占空比，其中低折射率部分'a'的长度与光栅'b'的间距长度之比小于0.5。此外，在一些优选实施例中，本发明包括激光器，激光器包括分布式反馈激光器，其中激光器包括具有较少衍射和较少散射损耗的光栅。在各种示例性实施例中，光栅进一步是部分光栅，从而由于光栅与前后面分离而导致的一级衍射损耗降低而提供增加的效率，并且在一些示例性实施例中，位于最低电场。

9. 发明申请

US20110032956A1 WIDE TEMPERATURE RANGE (WiTR) OPERATING WAVELENGTH-NARROWED SEMICONDUCTOR LASER 审中-公开
标题翻译：宽温度范围（WiTR）操作波长窄半导体激光器
公开(公告)号：US20110032956A1
公开(公告)日：2011-02-10
申请号：US12843508
申请日：2010-07-26
申请人： Manoj Kanskar
发明人： Manoj Kanskar
IPC分类号： H01S5/06 , H01S5/343
CPC分类号： H01S5/18397 , H01S5/1053 , H01S5/1096 , H01S5/12 , H01S5/141
摘要： The present invention provides a wide temperature range (WiTR) operating wavelength-narrowed and wavelength-stabilized semiconductor laser having a wide bandwidth gain medium imbedded in a waveguide layer comprising a plurality of quantum dots or quantum wells wherein each quantum dot or quantum well has a different gain peak-wavelength that provides gain at different temperatures as the junction temperature of the laser changes. Therefore, the wavelength defined by an appropriate grating to lock the wavelength and narrow the emission-bandwidth can be realized over a much wider operating temperature range than possible with gain medium that comprises just single quantum well or quantum dot or a plurality of quantum wells or quantum dots that have the same gain peak-wavelength.
摘要翻译：本发明提供了一种宽范围（WiTR）工作波长窄和波长稳定的半导体激光器，其具有嵌入在包括多个量子点或量子阱的波导层中的宽带宽增益介质，其中每个量子点或量子阱具有不同的增益峰值波长，随着激光器结温的变化，在不同的温度下提供增益。因此，可以在比仅包含单个量子阱或量子点或多个量子阱的增益介质更宽的工作温度范围内实现由合适的光栅限定波长并锁定发射带宽的波长的波长，或者具有相同增益峰值波长的量子点。

10. 发明授权

US07586970B2 High efficiency partial distributed feedback (p-DFB) laser 有权
标题翻译：高效部分分布反馈（p-DFB）激光器
公开(公告)号：US07586970B2
公开(公告)日：2009-09-08
申请号：US11777913
申请日：2007-07-13
申请人： Manoj Kanskar , Yiping He , Steven H. Macomber
发明人： Manoj Kanskar , Yiping He , Steven H. Macomber
IPC分类号： H01S3/08
CPC分类号： H01S5/12 , B82Y20/00 , H01S5/0287 , H01S5/1039 , H01S5/1203 , H01S5/187 , H01S5/34313
摘要： A second-order multi-mode partial distributed feedback (p-DFB) laser having increased electrical-to-optical power conversion efficiency, stabilized wavelength and narrowed emission linewidth. The laser includes an abbreviated grating housed in the laser cavity that is separated from both the front-end and the back-end of the laser facets.
摘要翻译：具有增加的电 - 光功率转换效率，稳定的波长和变窄的发射线宽的二阶多模式部分分布反馈（p-DFB）激光器。激光器包括容纳在激光腔中的缩写光栅，其从激光刻面的前端和后端分离。

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