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1. 发明申请

US20050176206A1 Method and system for forming a contact in a thin-film device 审中-公开
标题翻译：用于在薄膜器件中形成接触的方法和系统
公开(公告)号：US20050176206A1
公开(公告)日：2005-08-11
申请号：US11104997
申请日：2005-04-13
申请人： Manish Sharma , Thomas Anthony , Heon Lee
发明人： Manish Sharma , Thomas Anthony , Heon Lee
IPC分类号： H01L21/336 , H01L21/44 , H01L21/4763 , H01L21/48 , H01L21/50 , H01L43/12
CPC分类号： H01L43/12
摘要： An aspect of the present invention is a method of forming a contact in a thin-film device. The method includes forming a liftoff stencil, depositing at least one material through the liftoff stencil, removing a portion of the liftoff stencil depositing a dielectric material, planarizing the dielectric material thereby exposing a portion of the at least one material and depositing a conductor material in contact with the exposed portion of the at least one material.
摘要翻译：本发明的一个方面是在薄膜器件中形成接触的方法。该方法包括形成剥离模板，通过提升模板沉积至少一种材料，去除沉积介电材料的剥离模板的一部分，平坦化介电材料，从而暴露至少一种材料的一部分并将导体材料沉积在与所述至少一种材料的暴露部分接触。

2. 发明申请

US20050170628A1 Forming a contact in a thin-film device 失效
标题翻译：在薄膜装置中形成接触
公开(公告)号：US20050170628A1
公开(公告)日：2005-08-04
申请号：US10770083
申请日：2004-01-31
申请人： Manish Sharma , Thomas Anthony , Heon Lee
发明人： Manish Sharma , Thomas Anthony , Heon Lee
IPC分类号： H01L21/027 , H01L21/033 , H01L21/311 , H01L21/44 , H01L43/12
CPC分类号： H01L21/0331 , H01L21/0272 , H01L21/31144 , H01L43/12 , Y10S438/951
摘要： An aspect of the present invention is a method of forming a contact in a thin-film device. The method includes forming a liftoff stencil, depositing at least one material through the liftoff stencil, removing a portion of the liftoff stencil, forming a re-entrant profile with the remaining portion of the liftoff stencil and depositing a conductor material in contact with the at least one material on the re-entrant profile.
摘要翻译：本发明的一个方面是在薄膜器件中形成接触的方法。该方法包括形成剥离模板，将至少一种材料沉积通过剥离模板，去除剥离模板的一部分，与剥离模板的剩余部分形成重新进入的模型并且沉积导体材料与所述脱模模板接触。至少一个材料在入口轮廓。

3. 发明申请

US20050214953A1 METHOD OF FABRICATING A MRAM DEVICE 有权
标题翻译：制造MRAM器件的方法
公开(公告)号：US20050214953A1
公开(公告)日：2005-09-29
申请号：US10811553
申请日：2004-03-29
申请人： Heon Lee , Thomas Anthony , Manish Sharma
发明人： Heon Lee , Thomas Anthony , Manish Sharma
IPC分类号： H01L21/8246 , H01L27/22 , H01L43/12 , H01L21/336
CPC分类号： H01L27/222 , H01L43/12
摘要： A method of fabricating a magnetic random access memory (MRAM) device is disclosed. The method reduces the number of mask steps and processing steps required to fabricate the MRAM device. A first conductive layer and a sense layer are patterned in a first mask step. A subsequent etching step forms a bottom electrode and a sense layer that are continuous with each other in a first direction. A second conductive layer and a plurality of layers of material required to form a magnetic tunnel junction stack are patterned in a second mask step. A subsequent etching step forms a top electrode and a plurality of layers of material that are continuous with each other in a second direction, and a plurality of discrete sense layers. The discrete sense layers and the plurality of layers of material define a plurality of magnetic tunnel junction devices.
摘要翻译：公开了制造磁随机存取存储器（MRAM）装置的方法。该方法减少了制造MRAM设备所需的掩模步骤和处理步骤的数量。第一导电层和感测层在第一掩模步骤中被图案化。随后的蚀刻步骤形成在第一方向上彼此连续的底部电极和感测层。在第二掩模步骤中图案化形成磁性隧道结叠层所需的第二导电层和多层材料。随后的蚀刻步骤形成在第二方向上彼此连续的顶部电极和多个材料层，以及多个离散感测层。离散感测层和多层材料限定了多个磁性隧道结装置。

4. 发明申请

US20050094456A1 Heating MRAM cells to ease state switching 有权
标题翻译：加热MRAM电池以简化状态切换
公开(公告)号：US20050094456A1
公开(公告)日：2005-05-05
申请号：US10698501
申请日：2003-10-31
申请人： Heon Lee , Thomas Anthony , Manish Sharma
发明人： Heon Lee , Thomas Anthony , Manish Sharma
IPC分类号： H01L27/105 , G11C11/15 , G11C11/16 , H01L21/8246 , H01L43/00 , H01L43/08
CPC分类号： H01L27/222 , G11C11/16 , G11C11/1675
摘要： A method for making magnetic random access memories (MRAM) which reduces heat conduction from memory cells in an MRAM array. The method uses grid of bit and word lines for selectively accessing data in the array of magnetic memory cells. The grid has a plurality of thermally and electrically resistive portions which provide connections to the magnetic memory cells. The resistive portions increase the thermal resistance for heat generated by each memory cell and during operation provide localized heating of active memory cells to ease cell state switching.
摘要翻译：一种用于制造磁性随机存取存储器（MRAM）的方法，其减少MRAM阵列中的存储器单元的热传导。该方法使用位和字线的网格来选择性地访问磁存储单元阵列中的数据。栅极具有多个电阻和电阻部分，其提供到磁存储器单元的连接。电阻部分增加了由每个存储单元产生的热的热阻，并且在操作期间提供有源存储器单元的局部加热以便于单元状态切换。

5. 发明授权

US06989327B2 Forming a contact in a thin-film device 失效
标题翻译：在薄膜装置中形成接触
公开(公告)号：US06989327B2
公开(公告)日：2006-01-24
申请号：US10770083
申请日：2004-01-31
申请人： Manish Sharma , Thomas C. Anthony , Heon Lee
发明人： Manish Sharma , Thomas C. Anthony , Heon Lee
IPC分类号： H01L21/44
CPC分类号： H01L21/0331 , H01L21/0272 , H01L21/31144 , H01L43/12 , Y10S438/951
摘要： An aspect of the present invention is a method of forming a contact in a thin-film device. The method includes forming a liftoff stencil, depositing at least one material through the liftoff stencil, removing a portion of the liftoff stencil, forming a re-entrant profile with the remaining portion of the liftoff stencil and depositing a conductor material in contact with the at least one material on the re-entrant profile.
摘要翻译：本发明的一个方面是在薄膜器件中形成接触的方法。该方法包括形成剥离模板，将至少一种材料沉积通过剥离模板，去除剥离模板的一部分，与剥离模板的剩余部分形成重新进入的模型并且沉积导体材料与所述脱模模板接触。至少一个材料在入口轮廓。

6. 发明授权

US07186571B2 Method of fabricating a compositionally modulated electrode in a magnetic tunnel junction device 有权
标题翻译：在磁性隧道结装置中制造组成调制电极的方法
公开(公告)号：US07186571B2
公开(公告)日：2007-03-06
申请号：US10769107
申请日：2004-01-30
申请人： Heon Lee , Manish Sharma
发明人： Heon Lee , Manish Sharma
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , H01L27/222 , H01L43/08
摘要： A magnetic tunnel junction device with a compositionally modulated electrode and a method of fabricating a magnetic tunnel junction device with a compositionally modulated electrode are disclosed. An electrode in electrical communication with a data layer of the magnetic tunnel junction device includes a high resistivity region that has a higher resistivity than the electrode. As a result, a current flowing through the electrode generates joule heating in the high resistivity region and that joule heating increases a temperature of the data layer and reduces a coercivity of the data layer. Consequently, a magnitude of a switching field required to rotate an alterable orientation of magnetization of the data layer is reduced. The high resistivity region can be fabricated using a plasma oxidation, a plasma nitridation, a plasma carburization, or an alloying process.
摘要翻译：公开了一种具有组成调制电极的磁性隧道结器件和一种制造具有组成调制电极的磁性隧道结器件的方法。与磁性隧道结装置的数据层电连通的电极包括具有比电极更高的电阻率的高电阻率区域。结果，流过电极的电流在高电阻率区域产生焦耳加热，并且焦耳加热增加数据层的温度并降低数据层的矫顽力。因此，减小了旋转数据层的磁化方向的可变方向所需的切换场的大小。高电阻率区域可以使用等离子体氧化，等离子体氮化，等离子体渗碳或合金化工艺来制造。

7. 发明授权

US07522446B2 Heating MRAM cells to ease state switching 有权
标题翻译：加热MRAM电池以简化状态切换
公开(公告)号：US07522446B2
公开(公告)日：2009-04-21
申请号：US10698501
申请日：2003-10-31
申请人： Heon Lee , Thomas C. Anthony , Manish Sharma
发明人： Heon Lee , Thomas C. Anthony , Manish Sharma
IPC分类号： G11C11/00 , G11C7/00
CPC分类号： H01L27/222 , G11C11/16 , G11C11/1675
摘要： A method for making magnetic random access memories (MRAM) which reduces heat conduction from memory cells in an MRAM array. The method uses grid of bit and word lines for selectively accessing data in the array of magnetic memory cells. The grid has a plurality of thermally and electrically resistive portions which provide connections to the magnetic memory cells. The resistive portions increase the thermal resistance for heat generated by each memory cell and during operation provide localized heating of active memory cells to ease cell state switching.
摘要翻译：一种用于制造磁性随机存取存储器（MRAM）的方法，其减少MRAM阵列中的存储器单元的热传导。该方法使用位和字线的网格来选择性地访问磁存储单元阵列中的数据。栅极具有多个电阻和电阻部分，其提供到磁存储器单元的连接。电阻部分增加了由每个存储单元产生的热的热阻，并且在操作期间提供有源存储器单元的局部加热以便于单元状态切换。

8. 发明授权

US06984530B2 Method of fabricating a MRAM device 有权
标题翻译：制造MRAM器件的方法
公开(公告)号：US06984530B2
公开(公告)日：2006-01-10
申请号：US10811553
申请日：2004-03-29
申请人： Heon Lee , Thomas C. Anthony , Manish Sharma
发明人： Heon Lee , Thomas C. Anthony , Manish Sharma
IPC分类号： H01L21/00
CPC分类号： H01L27/222 , H01L43/12
摘要： A method of fabricating a magnetic random access memory (MRAM) device is disclosed. The method reduces the number of mask steps and processing steps required to fabricate the MRAM device. A first conductive layer and a sense layer are patterned in a first mask step. A subsequent etching step forms a bottom electrode and a sense layer that are continuous with each other in a first direction. A second conductive layer and a plurality of layers of material required to form a magnetic tunnel junction stack are patterned in a second mask step. A subsequent etching step forms a top electrode and a plurality of layers of material that are continuous with each other in a second direction, and a plurality of discrete sense layers. The discrete sense layers and the plurality of layers of material define a plurality of magnetic tunnel junction devices.
摘要翻译：公开了制造磁随机存取存储器（MRAM）装置的方法。该方法减少了制造MRAM设备所需的掩模步骤和处理步骤的数量。第一导电层和感测层在第一掩模步骤中被图案化。随后的蚀刻步骤形成在第一方向上彼此连续的底部电极和感测层。在第二掩模步骤中图案化形成磁性隧道结叠层所需的第二导电层和多层材料。随后的蚀刻步骤形成在第二方向上彼此连续的顶部电极和多个材料层，以及多个离散感测层。离散感测层和多层材料限定了多个磁性隧道结装置。

9. 发明申请

US20050170533A1 Magnetic tunnel junction device with a compositionally modulated electrode 有权
标题翻译：具有组成调制电极的磁隧道结器件
公开(公告)号：US20050170533A1
公开(公告)日：2005-08-04
申请号：US10769107
申请日：2004-01-30
申请人： Heon Lee , Manish Sharma
发明人： Heon Lee , Manish Sharma
IPC分类号： G11B5/127 , H01L21/00 , H01L21/8242 , H01L27/22 , H01L43/08 , H01L43/12
CPC分类号： H01L43/12 , H01L27/222 , H01L43/08
摘要： A magnetic tunnel junction device with a compositionally modulated electrode and a method of fabricating a magnetic tunnel junction device with a compositionally modulated electrode are disclosed. An electrode in electrical communication with a data layer of the magnetic tunnel junction device includes a high resistivity region that has a higher resistivity than the electrode. As a result, a current flowing through the electrode generates joule heating in the high resistivity region and that joule heating increases a temperature of the data layer and reduces a coercivity of the data layer. Consequently, a magnitude of a switching field required to rotate an alterable orientation of magnetization of the data layer is reduced. The high resistivity region can be fabricated using a plasma oxidation, a plasma nitridation, a plasma carburization, or an alloying process.
摘要翻译：公开了一种具有组成调制电极的磁性隧道结器件和一种制造具有组成调制电极的磁性隧道结器件的方法。与磁性隧道结装置的数据层电连通的电极包括具有比电极更高的电阻率的高电阻率区域。结果，流过电极的电流在高电阻率区域产生焦耳加热，并且焦耳加热增加数据层的温度并降低数据层的矫顽力。因此，减小了旋转数据层的磁化方向的可变方向所需的切换场的大小。高电阻率区域可以使用等离子体氧化，等离子体氮化，等离子体渗碳或合金化工艺来制造。

10. 发明申请

US20050152182A1 MEGNETIC MEMORY DEVICE 有权
公开(公告)号：US20050152182A1
公开(公告)日：2005-07-14
申请号：US10753539
申请日：2004-01-08
申请人： Thomas Anthony , Frederick Perner , Heon Lee
发明人： Thomas Anthony , Frederick Perner , Heon Lee
IPC分类号： G11C11/02 , G11C11/14 , G11C11/15 , H01L21/8246 , H01L27/10 , H01L27/105 , H01L43/08
CPC分类号： G11C11/15
摘要： A random access memory (MRAM) that includes a magnetic memory cell that is switchable between two states under the influence of a magnetic field. The MARAM also includes an electrical bit line coupled to the magnetic memory cell for generating the magnetic field. The electrical bit line includes a conductive component and a magnetic component to guide magnetic flux associated with the magnetic field towards the magnetic memory cell. A thermal insulator is positioned between the conductive portion and the magnetic memory cell, and the magnetic component has at least one guiding portion that extends from the conductive component towards the magnetic memory cell to guide the magnetic flux around at least a portion of the thermal insulator.
摘要翻译：一种随机存取存储器（MRAM），其包括在磁场影响下在两个状态之间切换的磁存储单元。 MARAM还包括耦合到磁存储单元的电位线，用于产生磁场。电位线包括导电部件和磁性部件，以将与磁场相关联的磁通量引向磁存储器单元。热绝缘体位于导电部分和磁存储单元之间，并且磁性部件具有至少一个引导部分，该引导部分从导电部件朝向磁存储器单元延伸，以引导围绕热绝缘体的至少一部分的磁通量。

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