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    • 2. 发明授权
    • Optical semiconductor module
    • 光半导体模块
    • US06799901B2
    • 2004-10-05
    • US09913160
    • 2001-08-10
    • Manabu YoshimuraKazunori YoshidaMasaki Furumai
    • Manabu YoshimuraKazunori YoshidaMasaki Furumai
    • C02B642
    • G02B6/4292G02B6/3822G02B6/3874G02B6/4206G02B6/421G02B6/4237G02B6/4263G02B6/4273G02B6/4283G02B6/4286H01L2224/48091H01S5/02212H01S5/02284H01L2924/00014
    • An optical semiconductor module with a downsizeable structure is provided. An optical semiconductor module 10 comprises a mounting member 20, first member 30, optical semiconductor element 22, second member 34, and optical fiber 40. The mounting member 20 extends along a reference surface intersecting an axis 12. The first member 30 has a tubular portion 30a extending in a direction of the axis 12, a first end 30b formed at one end of the tubular portion 30a and fixed to the mounting member, and a second end 30c formed at the other end of the tubular portion 30a. The optical semiconductor element 22 is arranged in the tubular portion 30a of the first member 30 such that its optical axis is directed in a direction of the predetermined axis 12. The second member 34 has a tubular portion 34a extending in a direction of the axis 12, and is fixed to the second end 30c of the first member 20. The optical fiber 40 extends in the tubular portion 34a of the second member 34 such that it is optically coupled to the optical semiconductor element 22.
    • 提供具有可缩小结构的光半导体模块。 光学半导体模块10包括安装构件20,第一构件30,光学半导体元件22,第二构件34和光纤40.安装构件20沿着与轴线12相交的参考表面延伸。第一构件30具有管状 部分30a在轴线12的方向上延伸,第一端30b形成在管状部分30a的一端并固定到安装构件,第二端30c形成在管状部分30a的另一端。 光学半导体元件22被布置在第一构件30的管状部分30a中,使得其光轴指向预定轴线12的方向。第二构件34具有沿轴线12的方向延伸的管状部分34a 并且固定到第一构件20的第二端30c。光纤40在第二构件34的管状部分34a中延伸,使得其光学耦合到光学半导体元件22。
    • 4. 发明申请
    • Optical module capable of transmitting optical signal in bi-directional with single fiber
    • 能够用单根光纤双向传输光信号的光模块
    • US20050084217A1
    • 2005-04-21
    • US10933495
    • 2004-09-03
    • Manabu YoshimuraYoshiki KuharaHiromi Nakanishi
    • Manabu YoshimuraYoshiki KuharaHiromi Nakanishi
    • G02B6/293G02B6/34G02B6/42G02B7/00G02B6/38G02B6/36
    • G02B6/4214G02B6/29361G02B6/4206G02B6/421G02B6/4246G02B6/4292
    • The present invention provides an optical module for light-transmitting a first optical signal with a first wavelength and light-receiving a second optical signal with a second wavelength in bidirectional. The optical module of the invention includes an optical fiber, a laser diode, a photodiode, an optical filter and a holder for securing the optical filter. The laser diode emits the first optical signal, while the photodiode receives the second optical signal. The filter reflects one of the first and second optical signals and transmits the other of first and second optical signals. The holder of the present invention includes first and second lens both built in the surface of the holder. The first lens faces the laser diode and optically couples the laser diode with the optical fiber, while the second lens faces the optical fiber. Since the first and second lenses are built in the surface of the holder, the optical alignment of the laser diode and the photodiode can be automatically carried out by mounting the laser diode and the photodiode on the surface of the holder.
    • 本发明提供了一种光学模块,用于对具有第一波长的第一光信号进行光传输,并且光接收具有双向的第二波长的第二光信号。 本发明的光学模块包括光纤,激光二极管,光电二极管,滤光器和用于固定滤光器的保持器。 激光二极管发射第一光信号,而光电二极管接收第二光信号。 滤光器反射第一和第二光信号中的一个,并透射第一和第二光信号中的另一个。 本发明的保持器包括构成保持器表面的第一和第二透镜。 第一透镜面对激光二极管并且将激光二极管与光纤耦合,而第二透镜面对光纤。 由于第一透镜和第二透镜被构建在保持器的表面中,因此可以通过将激光二极管和光电二极管安装在保持器的表面上来自动执行激光二极管和光电二极管的光学对准。
    • 6. 发明授权
    • Semiconductor optical device and method of fabricating the same
    • 半导体光学器件及其制造方法
    • US08039282B2
    • 2011-10-18
    • US12414095
    • 2009-03-30
    • Manabu YoshimuraNobuyuki IkomaKenji Hiratsuka
    • Manabu YoshimuraNobuyuki IkomaKenji Hiratsuka
    • H01S5/223H01L21/00
    • H01S5/227H01S5/2095H01S5/2206H01S5/2275
    • In a method of fabricating a semiconductor optical device, a semiconductor region is formed by growing an InP lower film, a active region, an InP upper film and a capping film on a substrate sequentially. Material of the capping film is different from that of InP. Next, a mask is formed on the capping film, and the semiconductor region is etched using the mask to form a semiconductor stripe mesa, which includes an InP lower cladding layer, a active layer, an InP upper cladding layer and a capping layer. The active layer comprises aluminum-based III-V compound. A width of the top surface of the capping layer is greater than that of a width of the bottom surface of the capping layer. A width of the top surface of the InP upper cladding layer is smaller than that of the bottom surface of the InP upper cladding layer. The minimum width of the semiconductor mesa is in the InP upper cladding layer. After forming the semiconductor stripe mesa, thermal process of the semiconductor mesa is carried out in an atmosphere to form a mass transport semiconductor on a side of the InP upper cladding layer, and the atmosphere contains V-group material.
    • 在制造半导体光学器件的方法中,依次在衬底上生长InP下部膜,有源区,InP上膜和覆盖膜来形成半导体区域。 封盖膜的材料与InP不同。 接下来,在覆盖膜上形成掩模,并且使用掩模蚀刻半导体区域,以形成包括InP下包层,有源层,InP上覆层和覆盖层的半导体条状台面。 有源层包括铝基III-V族化合物。 覆盖层的顶表面的宽度大于覆盖层的底表面宽度的宽度。 InP上包层的顶表面的宽度小于InP上包层的底表面的宽度。 半导体台面的最小宽度在InP上包层中。 在形成半导体条状台面之后,半导体台面的热处理在气氛中进行,以在InP上部包层的一侧形成质量传输半导体,并且气氛包含V族材料。
    • 7. 发明授权
    • Electric power converter
    • 电力转换器
    • US08035334B2
    • 2011-10-11
    • US12440934
    • 2006-10-31
    • Takahiko KobayashiYoshihiko KimparaManabu Yoshimura
    • Takahiko KobayashiYoshihiko KimparaManabu Yoshimura
    • H02P3/18H02P21/00
    • H02P27/08H02M7/48H02M7/5395H02M2001/0009
    • A voltage-command correction unit provided between an electric-power conversion unit and a voltage-command calculation unit provides a predetermined current range including the zero level for the detected output current, and, at a first clock time when the output current enters from outside to inside of the current range, sets a zero cross timing of the output current as a clock time for switching the polarity of the correction voltage that corrects the AC voltage command calculated and output by the voltage-command calculation unit based on the first clock time and the frequency, thereby making a configuration capable of correcting the AC voltage command with the correction voltage with the same polarity as the polarity of the output current around the zero cross point of the output current.
    • 设置在电力转换单元和电压指令计算单元之间的电压指令校正单元提供包括检测到的输出电流的零电平的预定电流范围,并且在输出电流从外部进入的第一时钟时间 在电流范围内,将输出电流的零交叉定时设置为用于切换校正电压的极性的时钟时间,该校正电压校正由电压指令计算单元计算并输出的交流电压指令基于第一时钟时间 频率,从而能够以与输出电流的零交叉点周围的输出电流的极性相同极性的校正电压来校正AC电压指令。
    • 9. 发明授权
    • Inverter apparatus
    • 变频器
    • US07436144B2
    • 2008-10-14
    • US10573858
    • 2003-09-30
    • Manabu YoshimuraToshiyuki Kaitani
    • Manabu YoshimuraToshiyuki Kaitani
    • G05B11/28
    • H02M7/53873H02P27/08
    • A CPU calculates, based on a frequency command value for driving a motor and on a state quantity of the motor, an output-voltage command value in which only the phase advances while amplitude is constant in each calculation period, without reducing the calculation period. An ASIC reflects the output-voltage command value in a triangular wave signal in a time-series order to compare with each other, and outputs a PWM signal to a switching circuit. Thus, a waveform of an output voltage is made close to a sine wave irrespective of an output frequency being high or low, and a processing load of the CPU is reduced.
    • 在不减少计算周期的情况下,CPU根据用于驱动电动机的频率指令值和电动机的状态量,计算在每个计算期间仅振幅恒定的相位前进的输出电压指令值。 ASIC以时间序列顺序反映三角波信号中的输出电压指令值进行比较,并将PWM信号输出到开关电路。 因此,无论输出频率高还是低,输出电压的波形接近正弦波,并且CPU的处理负荷降低。