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1. 发明授权

US07824058B2 Wake-up apparatus 有权
标题翻译：唤醒设备
公开(公告)号：US07824058B2
公开(公告)日：2010-11-02
申请号：US12094853
申请日：2006-11-24
申请人： Manabu Inoue , Masakazu Yamamoto
发明人： Manabu Inoue , Masakazu Yamamoto
IPC分类号： F21V33/00
CPC分类号： G04G15/003 , G04G11/00 , H05B37/0218 , H05B37/0281 , Y02B20/42 , Y02B20/46 , Y10S5/905
摘要： In a wake-up apparatus for waking up a sleeper by light stimulus, it wakes the sleeper comfortably without feeling glare. A lighting device has a first lighting unit at a position that a light emitting face cannot be observed directly by the sleeper, and a second lighting unit at a position that a light emitting face can be observed directly by the sleeper. A control device activates the lighting device a predetermined time before a preset wake-up time so as to vary illuminance of light emitted from the lighting device in an order of low illuminance, middle illuminance and high illuminance, to light only the first lighting unit in a low illuminance condition and a middle illuminance condition, and to light both of the first lighting unit and the second lighting unit in a high illuminance condition, and quickly varies from the middle illuminance condition to the high illuminance condition.
摘要翻译：在用光刺激唤醒睡眠者的唤醒装置中，它可以舒适地唤醒睡眠者，而不会眩光。照明装置具有在由睡眠者不能直接观察到发光面的位置处的第一照明单元，以及可以通过卧铺台直接观察发光面的位置处的第二照明单元。控制装置在预设的唤醒时间之前的预定时间激活照明装置，以便以低照度，中等照度和高照度的顺序改变从照明装置发射的光的照度，仅将第一照明装置低照度条件和中等照度条件，并且在高照度条件下点亮第一照明单元和第二照明单元，并且从中间照度条件到高照度条件快速变化。

2. 发明申请

US20090116234A1 WAKE-UP APPARATUS 有权
标题翻译：唤醒设备
公开(公告)号：US20090116234A1
公开(公告)日：2009-05-07
申请号：US12094853
申请日：2006-11-24
申请人： Manabu Inoue , Masakazu Yamamoto
发明人： Manabu Inoue , Masakazu Yamamoto
IPC分类号： F21V33/00
CPC分类号： G04G15/003 , G04G11/00 , H05B37/0218 , H05B37/0281 , Y02B20/42 , Y02B20/46 , Y10S5/905
摘要： In a wake-up apparatus for waking up a sleeper by light stimulus, it wakes the sleeper comfortably without feeling glare. A lighting device has a first lighting unit at a position that a light emitting face cannot be observed directly by the sleeper, and a second lighting unit at a position that a light emitting face can be observed directly by the sleeper. A control device activates the lighting device a predetermined time before a preset wake-up time so as to vary illuminance of light emitted from the lighting device in an order of low illuminance, middle illuminance and high illuminance, to light only the first lighting unit in a low illuminance condition and a middle illuminance condition, and to light both of the first lighting unit and the second lighting unit in a high illuminance condition, and quickly varies from the middle illuminance condition to the high illuminance condition.
摘要翻译：在用光刺激唤醒睡眠者的唤醒装置中，它可以舒适地唤醒睡眠者，而不会眩光。照明装置具有在由睡眠者不能直接观察到发光面的位置处的第一照明单元，以及可以通过卧铺台直接观察发光面的位置处的第二照明单元。控制装置在预设的唤醒时间之前的预定时间激活照明装置，以便以低照度，中等照度和高照度的顺序改变从照明装置发射的光的照度，仅将第一照明装置低照度条件和中等照度条件，并且在高照度条件下点亮第一照明单元和第二照明单元，并且从中间照度条件到高照度条件快速变化。

3. 发明授权

US09926638B2 Aluminum or aluminum alloy molten salt electroplating bath having good throwing power, electroplating method using the bath, and pretreatment method of the bath 有权
公开(公告)号：US09926638B2
公开(公告)日：2018-03-27
申请号：US13977879
申请日：2012-01-04
申请人： Manabu Inoue , Akira Hashimoto , Tadahiro Onuma , Toshiki Inomata , Keisuke Nonomura , Naruaki Konno
发明人： Manabu Inoue , Akira Hashimoto , Tadahiro Onuma , Toshiki Inomata , Keisuke Nonomura , Naruaki Konno
IPC分类号： C25D3/44 , C25D3/56 , C25D3/66 , C25D5/18
CPC分类号： C25D3/665 , C25D3/44 , C25D3/56 , C25D5/18
摘要： The purpose of the present invention is to provide an electrical Al plating bath that poses little danger of exploding or igniting as a result of contacting air or water, and contains no benzene, toluene, xylene, naphthalene, or 1,3,5-trimethylbenzene, which have detrimental effects to humans. The present invention provides an electrical aluminum or aluminum alloy fused salt plating bath that is obtained by heat treatment of an electrical aluminum or aluminum alloy fused salt plating bath containing (A) a halogenated aluminum as the primary component and (B) at least one other type of halide after adding (C) one, two or more reducible compounds selected from the group consisting of hydrides of elements in Group 1 Periods 2 through 6 of the Periodic Table of Elements and/or hydrides of Group 13 Periods 2 through 6 of the Periodic Table of Elements and amine borane compounds.

4. 发明授权

US08507793B2 Plasma display panel and chamber for manufacturing plasma display panel 有权
标题翻译：等离子显示面板和等离子体显示面板制造室
公开(公告)号：US08507793B2
公开(公告)日：2013-08-13
申请号：US13027516
申请日：2011-02-15
申请人： Shigeo Kasahara , Akira Tokai , Manabu Inoue , Naoki Kosugi , Toshiaki Yoshitani
发明人： Shigeo Kasahara , Akira Tokai , Manabu Inoue , Naoki Kosugi , Toshiaki Yoshitani
IPC分类号： H01J5/00 , C03B5/16
CPC分类号： H01J9/40 , H01J11/10 , H01J11/48
摘要： A structure of a panel which can be thinned down to about a panel thickness of a PDP and a manufacturing method thereof are provided. A gas filling hole is provided to a surface of a rear glass substrate of a PDP, the surface coming in contact with a front glass substrate of the PDP. Vacuuming and filling of a discharge gas are performed through the gas filling hole. After filling of the discharge gas, a mechanism for lifting solder iron up and down and supplying solder provided inside a chamber inserts a tip of an ultrasonic soldering iron into the gas filling hole to start supplying a solder which is a material for a plug sealant. When a series of forming steps of the plug sealant are finished, the ultrasonic soldering iron is retreated before the solder is solidified to finish formation of the plug sealant.
摘要翻译：本发明提供一种能够减薄至PDP面板厚度的面板结构及其制造方法。在PDP的后玻璃基板的表面设置充气孔，其表面与PDP的前玻璃基板接触。通过气体填充孔进行放电气体的抽吸和填充。在填充放电气体之后，用于提升焊锡铁的上下方式并且在室内提供焊料的机构将超声波烙铁的尖端插入到充气孔中，以开始供应作为塞子密封剂的材料的焊料。当塞子密封剂的一系列形成步骤结束时，在焊料固化之前，超声波烙铁被退回以完成塞子密封剂的形成。

5. 发明授权

US08161225B2 Semiconductor memory card, access device and method 有权
标题翻译：半导体存储卡，接入设备和方法
公开(公告)号：US08161225B2
公开(公告)日：2012-04-17
申请号：US10567241
申请日：2004-08-03
申请人： Takuji Maeda , Shinji Inoue , Yoshiho Gotoh , Jun Ohara , Masahiro Nakanishi , Shoichi Tsujita , Tomoaki Izumi , Tetsushi Kasahara , Kazuaki Tamura , Kiminori Matsuno , Koichi Horiuchi , Manabu Inoue , Makoto Ochi
发明人： Takuji Maeda , Shinji Inoue , Yoshiho Gotoh , Jun Ohara , Masahiro Nakanishi , Shoichi Tsujita , Tomoaki Izumi , Tetsushi Kasahara , Kazuaki Tamura , Kiminori Matsuno , Koichi Horiuchi , Manabu Inoue , Makoto Ochi
IPC分类号： G06F12/00 , G06F13/00 , G06F13/28
CPC分类号： G06F3/0659 , G06F3/061 , G06F3/0632 , G06F3/0679
摘要： A card information-storing portion is provided in a semiconductor memory card, and information relating to access performance such as access condition and access rate is held in the storing portion. Further, an access device acquires the held information from the semiconductor memory card to make it possible that the information can be used for control of a file system. This optimizes processing of the access device and the semiconductor memory card independent of differences in characteristics of semiconductor memory cards and management methods used, realizing high-rate access from the access device to a semiconductor memory card.
摘要翻译：在半导体存储卡中设置有卡片信息存储部分，并且存储与存取条件和访问速率有关的访问性能的信息被保存在存储部分中。此外，访问装置从半导体存储卡获取保持的信息，使得该信息可以用于文件系统的控制。这优化了访问设备和半导体存储卡的处理，而与半导体存储卡的特性差异以及使用的管理方法无关，实现了从访问设备到半导体存储卡的高速率访问。

6. 发明授权

US07849382B2 Memory control circuit, nonvolatile storage apparatus, and memory control method 有权
标题翻译：存储器控制电路，非易失性存储装置和存储器控制方法
公开(公告)号：US07849382B2
公开(公告)日：2010-12-07
申请号：US11568564
申请日：2005-05-12
申请人： Tetsushi Kasahara , Tomoaki Izumi , Masahiro Nakanishi , Kazuaki Tamura , Kiminori Matsuno , Yoshihisa Inagaki , Manabu Inoue
发明人： Tetsushi Kasahara , Tomoaki Izumi , Masahiro Nakanishi , Kazuaki Tamura , Kiminori Matsuno , Yoshihisa Inagaki , Manabu Inoue
IPC分类号： G11C29/00
CPC分类号： G11C16/10 , G06F11/1068
摘要： An address at which a writing error occurs is held, and after a completion of a series of writings, the data of the held address is read. Then, a faulty-block processing is performed only for the addresses, for which it is determined that retry of writing is required, thereby preventing an increase of faulty-blocks. This can suppress the problem that when a writing is performed in a particular flash memory, a writing error frequently occurs and a large number of faulty blocks occur.
摘要翻译：发生写入错误的地址被保持，并且在一系列写入完成之后，读取保持的地址的数据。然后，仅对于确定需要重写写入的地址执行错误块处理，从而防止错误块的增加。这可以抑制在特定闪速存储器中执行写入时经常发生写入错误并发生大量错误块的问题。

7. 发明授权

US07702846B2 Memory controller, nonvolatile storage device, nonvolatile storage system, and data writing method 有权
标题翻译：内存控制器，非易失性存储设备，非易失性存储系统和数据写入方式
公开(公告)号：US07702846B2
公开(公告)日：2010-04-20
申请号：US11908715
申请日：2006-03-09
申请人： Masahiro Nakanishi , Tomoaki Izumi , Tetsushi Kasahara , Kazuaki Tamura , Kiminori Matsuno , Yutaka Nakamura , Masayuki Toyama , Yasushi Goho , Syunichi Iwanari , Yoshihisa Kato , Manabu Inoue
发明人： Masahiro Nakanishi , Tomoaki Izumi , Tetsushi Kasahara , Kazuaki Tamura , Kiminori Matsuno , Yutaka Nakamura , Masayuki Toyama , Yasushi Goho , Syunichi Iwanari , Yoshihisa Kato , Manabu Inoue
IPC分类号： G06F12/12
CPC分类号： G06F3/0656 , G06F3/0613 , G06F3/0619 , G06F3/0643 , G06F3/0679 , G06F12/0246 , G06F2212/1016 , G06F2212/7203
摘要： A nonvolatile storage device is provided with a nonvolatile main storage memory whose erase size is larger than a cluster size, and a buffer, i.e. a nonvolatile auxiliary storage memory. At the time of writing data in the memory, the data is temporarily stored in the buffer, then, a plurality of data in the buffer are collectively taken out to be stored in the main storage memory. Data in an original block is saved in a write block in the main storage memory. Thus, the data can be written in the main storage memory at a high speed.
摘要翻译：非易失性存储装置具有擦除大小大于簇大小的非易失性主存储存储器和缓冲器，即非易失性辅助存储存储器。在将数据写入存储器时，将数据临时存储在缓冲器中，然后将缓冲器中的多个数据共同取出以存储在主存储器中。原始块中的数据保存在主存储器中的写入块中。因此，可以高速地将数据写入主存储存储器。

8. 发明申请

US20100062678A1 SHOOTING TOY USED IN GAME FOR TWO OR MORE PLAYERS 失效
标题翻译：为两个或更多的玩家玩游戏玩具
公开(公告)号：US20100062678A1
公开(公告)日：2010-03-11
申请号：US12520597
申请日：2007-12-21
申请人： Manabu Inoue
发明人： Manabu Inoue
IPC分类号： A63H30/00
CPC分类号： A63F13/837 , A63F9/02 , A63F9/0252 , A63F13/06 , A63F13/213 , A63F13/235 , A63F13/245 , A63F13/285 , A63F13/58 , A63F13/843 , A63F2300/1037 , A63F2300/1062 , A63F2300/1087 , A63F2300/65 , A63F2300/8076 , F41A33/02 , F41G3/2655
摘要： A shooting toy used in a game for two or more players for enabling players to actually sense the thrill of close combat. The toy include an infrared ray signal generating section 25, an infrared ray signal receiving section 31, a damage value determining section 35, a radio signal transmitting section 37, a radio signal receiving section 39, a radio intensity determining section 41, a damage state determining section 49, and a damage state representing section 51. The damage value determining section 35 changes the parameter value depending on the determination result by the radio intensity determining section 41.
摘要翻译：一个用于两个或更多玩家游戏的射击玩具，使玩家能够真正感受到近距离战斗的快感。玩具包括红外线信号生成部25，红外线信号接收部31，损伤值判定部35，无线信号发送部37，无线信号接收部39，无线电强度判定部41，损伤状态确定部分49和损伤状态表示部分51.损伤值确定部分35根据无线电强度确定部分41的确定结果改变参数值。

9. 发明授权

US07654466B2 Semiconductor memory card, semiconductor memory control apparatus, and semiconductor memory control method 有权
标题翻译：半导体存储卡，半导体存储器控制装置和半导体存储器控制方法
公开(公告)号：US07654466B2
公开(公告)日：2010-02-02
申请号：US10553725
申请日：2004-09-13
申请人： Takuji Maeda , Shinji Inoue , Yoshiho Gotoh , Jun Ohara , Masahiro Nakanishi , Shoichi Tsujita , Tomoaki Izumi , Tetsushi Kasahara , Kazuaki Tamura , Kiminori Matsuno , Koichi Horiuchi , Manabu Inoue
发明人： Takuji Maeda , Shinji Inoue , Yoshiho Gotoh , Jun Ohara , Masahiro Nakanishi , Shoichi Tsujita , Tomoaki Izumi , Tetsushi Kasahara , Kazuaki Tamura , Kiminori Matsuno , Koichi Horiuchi , Manabu Inoue
IPC分类号： G06F12/00
CPC分类号： G06F12/0246 , G06F3/0611 , G06F3/0625 , G06F3/0658 , G06F3/0659 , G06F3/0688 , Y02D10/154
摘要： A host information memory is provided in a semiconductor memory card and a data write start address and a data size supplied by an access unit are stored. A free physical area generation section determines whether or not to perform erasing of an invalid block of a nonvolatile memory when writing of data based on the data write start address and data size, and determines the number of blocks to be erased. When erasing, writing of data and erasing of invalid blocks are simultaneously performed with respect to different memory chips. Erase process of data, herewith, can be optimized and high speed access from the access unit to a semiconductor memory card can be realized.
摘要翻译：在半导体存储卡中提供主机信息存储器，并且存储由访问单元提供的数据写入起始地址和数据大小。空闲物理区域生成部分基于数据写入开始地址和数据大小来确定在写入数据时是否执行非易失性存储器的无效块的擦除，并且确定要擦除的块的数量。当擦除时，相对于不同的存储器芯片同时执行数据的写入和无效块的擦除。可以优化数据的擦除处理，并且可以实现从存取单元到半导体存储卡的高速访问。

10. 发明申请

US20090020185A1 AQUEOUS TREATING SOLUTION FOR FORMING BLACK TRIVALENT-CHROMIUM CHEMICAL CONVERSION COATING ON ZINC OR ZINC ALLOY AND METHOD OF FORMING BLACK TRIVALENT-CHROMIUM CHEMICAL CONVERSION COATING 有权
标题翻译：用于在锌或锌合金上形成黑色三价铬化学转化涂层的水溶液处理方法及形成黑色三价铬化学转化涂料的方法
公开(公告)号：US20090020185A1
公开(公告)日：2009-01-22
申请号：US12200209
申请日：2008-08-28
申请人： Manabu Inoue
发明人： Manabu Inoue
IPC分类号： C23C22/05 , C23C30/00 , B32B15/00
CPC分类号： C23C22/30 , C23C22/46 , C23C22/83 , C23C2222/10
摘要： A treating solution for forming on a surface of either zinc or a zinc alloy a hexavalent-chromium-free trivalent-chromium chemical conversion coating which has an even black appearance and satisfactory corrosion resistance. The treating solution has a long treating-bath life. Also provided is a method of forming a black trivalent-chromium chemical conversion coating. The aqueous treating solution, which is for forming a black trivalent-chromium chemical conversion coating on zinc or a zinc alloy, contains trivalent chromium ions, a phosphoric ester and/or phosphorous ester, and a sulfur compound. The method is a method of chemically treating zinc or a zinc alloy which comprises using the aqueous treating solution to chemically treat the zinc or zinc alloy at a solution temperature of 10-60° C., whereby a black trivalent-chromium chemical conversion coating is formed on the zinc or zinc alloy. Furthermore provided is a coated zinc or zinc alloy metal which comprises zinc or a zinc alloy and, formed thereon, a black trivalent-chromium chemical conversion coating formed by a chemical treatment with the aqueous treating solution.
摘要翻译：用于在锌或锌合金的表面上形成具有均匀黑色外观和令人满意的耐腐蚀性的无六价铬三价铬化学转化涂层的处理溶液。处理液的处理时间长。还提供了形成黑色三价铬化学转化膜的方法。用于在锌或锌合金上形成黑色三价铬化学转化涂层的水处理溶液含有三价铬离子，磷酸酯和/或磷酸酯和硫化合物。该方法是一种化学处理锌或锌合金的方法，其中包括使用水处理溶液在10-60℃的溶液温度下化学处理锌或锌合金，由此黑色三价铬化学转化膜为形成在锌或锌合金上。此外，还提供了包含锌或锌合金的涂层锌或锌合金金属，并在其上形成通过用水处理溶液的化学处理形成的黑色三价铬化学转化膜。

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