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    • 3. 发明授权
    • Display device
    • 显示设备
    • US5747927A
    • 1998-05-05
    • US612681
    • 1996-03-08
    • Mamoru NamikawaSatoshi YoshimuraKenichi Honda
    • Mamoru NamikawaSatoshi YoshimuraKenichi Honda
    • H01J29/87H01J29/92H01J31/12H01J1/62H01J1/88H01J19/42H01J63/04
    • H01J29/92H01J31/127H01J2329/8625
    • A display device capable of simplifying connection between a drive circuit and lead-out wirings led out of electrodes and being small-sized while keeping a size of an image plane from being reduced. A part of supports for holding an anode substrate and a cathode substrate spaced from each other at a predetermined interval is formed so to be conductive and is interposedly arranged between the anode electrode and a lead-out wiring formed on the cathode substrate, to thereby provide an anode lead-out wiring on the cathode substrate. Such construction permits the anode lead-out electrode to be arranged so as to extend in the same direction as a cathode lead-out electrode or a gate lead-out electrode, to thereby facilitate connection of the wirings. Also, the anode substrate can be decreased in size because a region for the anode lead-out wiring is eliminated.
    • 一种显示装置,其能够简化从电极引出的驱动电路和导出布线之间的连接,并且在保持图像平面尺寸的同时保持小尺寸。 形成保持以预定间隔相互隔开的阳极基板和阴极基板的支撑体的一部分为导电性,并且插入在阳极电极与形成在阴极基板上的引出布线之间,从而提供 阴极基板上的阳极引出布线。 这种结构允许阳极引出电极布置成沿着与阴极引出电极或栅极引出电极相同的方向延伸,从而便于连接布线。 此外,阳极基板的尺寸可以减小,因为阳极引出布线的区域被消除。
    • 5. 发明授权
    • Three-dimensional machining method
    • 三维加工方法
    • US5515290A
    • 1996-05-07
    • US323025
    • 1994-10-14
    • Kenichi Honda
    • Kenichi Honda
    • G05B19/4099
    • G05B19/4099Y02P90/265
    • A plurality of curved surfaces which have distinct characteristics are defined as a unified curved surface. The definition is made by a group of polynomials with respect to parameters u and v in two directions reflecting the characteristics of the curved surfaces. Then, paths of a cutting tool to machine the unified curved surface are generated by using the polynomials. Further, a curved surface is divided by a curve into two regions, and a point is designated in one of the regions. Only with respect to the region which includes the designated point, paths of the cutting tool are generated.
    • 具有不同特征的多个曲面被定义为统一的曲面。 该定义通过反映曲面特征的两个方向上的参数u和v的一组多项式来进行。 然后,通过使用多项式来生成用于加工统一曲面的切削工具的路径。 此外,曲面被曲线分割为两个区域,并且在一个区域中指定点。 仅对于包括指定点的区域,生成切削工具的路径。
    • 10. 发明授权
    • Thyristor with improved dv/dt resistance
    • 晶闸管具有改善的dv / dt电阻
    • US5637886A
    • 1997-06-10
    • US388471
    • 1995-02-14
    • Katsumi SatohKenichi HondaKazuhiko Niwayama
    • Katsumi SatohKenichi HondaKazuhiko Niwayama
    • H01L29/74H01L29/861H01L31/111
    • H01L29/7428H01L31/1113
    • When an abrupt voltage noise is applied across an anode electrode (A) and a cathode electrode (K), displacement currents (I.sub.10 to I.sub.30) which are responsive to junction capacitances (C.sub.10 to C.sub.30) of respective unit thyristors (ST.sub.1, ST.sub.2, MT) are generated. The displacement currents (I.sub.10 to I.sub.30) flow into a compensation electrode (C) through paths in a P base layer (2) having resistances (R.sub.10 to R.sub.30), and further flow to an external power source through the cathode electrode (K) which is short-circuited with the compensation electrode (C). The paths of the three displacement currents (I.sub.10 to I.sub.30) are separated from each other by resistances (R.sub.12, R.sub.23). Therefore, a forward bias voltage of a junction (D.sub.10) caused by the displacement current (I.sub.10) is attenuated by the displacement current (I.sub.20), while a forward bias voltage of a junction (D.sub.20) caused by the displacement current (I.sub.20) is attenuated by the displacement current (I.sub.30). Thus, it is possible to improve a thyristor of a multistage structure in dv/dt resistance, at no sacrifice of sensitivity.
    • 当在阳极电极(A)和阴极电极(K)之间施加突然的电压噪声时,响应各单位晶闸管(ST1,ST2,MT)的结电容(C10〜C30)的位移电流(I10〜I30) )。 位移电流(I10〜I30)通过具有电阻(R10〜R30)的P基极层(2)中的路径流入补偿电极(C),并通过阴极电极(K)进一步流向外部电源 与补偿电极(C)短路。 三个位移电流(I10〜I30)的路径通过电阻(R12,R23)彼此分离。 因此,由位移电流(I10)引起的接点(D10)的正向偏置电压被位移电流(I20)衰减,而由位移电流(I20)引起的接点(D20)的正向偏置电压为 被位移电流衰减(I30)。 因此,可以在不牺牲灵敏度的情况下,以dv / dt电阻改善多级结构的晶闸管。