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1. 发明授权

US4738284A Method and an apparatus for detecting the weft yarn in a jet loom 失效
标题翻译：用于检测喷气织机中的纬纱的方法和装置
公开(公告)号：US4738284A
公开(公告)日：1988-04-19
申请号：US60992
申请日：1987-06-12
申请人： Mamoru Ishikawa , Yukihiro Tsuji
发明人： Mamoru Ishikawa , Yukihiro Tsuji
IPC分类号： D03D51/34
CPC分类号： D03D51/34
摘要： A light reflection type weft detection apparatus for use in a jet loom is disclosed, in which the weft yarn is caused to travel by a jet fluid within a weft guide passage provided along a reed mounted on a slay, and which detection apparatus includes a light emitting section having an optical axis extending in a direction into the weft yarn guide passage, a light receiving section adapted for receiving the light reflected from the weft yarn in said guide passage, and a device for supporting at its end the light emitting and light receiving sections. The supporting device is mounted on the slay at a position in which it is capable of spreading the warp yarn for intruding into the warp shed. As the reed is receded after beating, the supporting device fitted with the light emitting and receiving sections spreads the warp yarns and intrudes into the warp shed being formed by the warp yarns. The weft yarn is detected as the end of the weft yarn travelling through the weft yarn guide passage traverses the optical axes of the light emitting and receiving sections. In case a failure in weft filling has occurred, that is, when the end of the weft yarn does not traverse the optical axes, the loom operation is halted on the basis of weft insertion failure signals from the light emitting and receiving sections.
摘要翻译：公开了一种用于喷气织机的光反射型纬纱检测装置，其中使纬纱由沿着安装在泥浆上的芦苇设置的引纬通道内的喷射流体运动，并且该检测装置包括光具有沿着纬纱引导通道的方向延伸的光轴的发光部分，适于接收从所述引导通道中的纬纱反射的光的光接收部分，以及用于在其端部支撑发光和光接收的装置部分。支撑装置安装在泥浆上，在该位置上能够将经纱撒入经纱梭中。由于在打浆后退回簧片，配有发光和接收部分的支撑装置将经纱展开并进入由经纱形成的经纱。当纬纱引导通道穿过发光和接收部分的光轴时，纬纱的末端被检测出来。在纬纱填充失败的情况下，也就是说，当纬纱的端部不穿过光轴时，基于来自发光和接收部分的引纬失败信号停止织机操作。

2. 发明授权

US08636498B2 Method for manufacturing nano-imprint mold, method for forming resin pattern by nano-imprint technique, and nano-imprint mold 有权
标题翻译：纳米压印模具的制造方法，纳米压印技术形成树脂图案的方法和纳米压印模具
公开(公告)号：US08636498B2
公开(公告)日：2014-01-28
申请号：US13204907
申请日：2011-08-08
申请人： Yukihiro Tsuji , Masaki Yanagisawa
发明人： Yukihiro Tsuji , Masaki Yanagisawa
IPC分类号： B29C59/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： A nano-imprint mold includes a mold body having a first surface provided with a pattern having projections and recesses, a second surface opposite the first surface and a side surface between the first surface and the second surface; and a mold base having a surface for fixing the mold body thereto. In addition, the second surface of the mold body is fixed to a part of the surface of the mold base, the second surface of the mold body being disposed away from at least a part of an edge of the surface of the mold base. Furthermore, the mold body has a shape such that a width thereof in a direction orthogonal to a direction extending from the first surface toward the second surface decreases from the first surface toward the second surface.
摘要翻译：纳米压印模具包括：模体，其具有设置有具有突出和凹陷的图案的第一表面，与第一表面相对的第二表面和在第一表面和第二表面之间的侧表面; 以及具有用于将模体固定到其上的表面的模具基座。此外，模具体的第二表面固定到模具基座的表面的一部分，模具主体的第二表面远离模具底座的表面的边缘的至少一部分设置。此外，模具体的形状使得其在与从第一表面朝向第二表面延伸的方向正交的方向上的宽度从第一表面朝向第二表面减小。

3. 发明申请

US20090170327A1 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20090170327A1
公开(公告)日：2009-07-02
申请号：US12314603
申请日：2008-12-12
申请人： Yukihiro Tsuji
发明人： Yukihiro Tsuji
IPC分类号： H01L21/302
CPC分类号： G02B6/12007 , B82Y10/00 , B82Y40/00 , G02B5/1857 , G03F7/0002 , H01S5/12 , H01S5/1203 , H01S5/1231 , H01S5/16 , H01S5/2275
摘要： In this method of manufacturing a semiconductor device, the remaining layer of an etching mask layer remains in a predetermined thickness when the stamping face of a nano-stamper is pressed on the surface of the etching mask layer. Therefore, the remaining layer of the etching mask layer functions as a cushion so that the stress added to the nano-stamper and the semiconductor substrate is reduced. Accordingly, the crystal defect that might otherwise be introduced in the semiconductor substrate in pressing the nano-stamper on the semiconductor substrate can be restrained, resulting in suppression of the degradation of optical characteristics of the semiconductor device. Also, since the nano-stamper can be prevented from being damaged, extra steps such as the replacement of the nano-stamper can be avoided.
摘要翻译：在这种制造半导体器件的方法中，当在蚀刻掩模层的表面上按压纳米压模的冲压面时，蚀刻掩模层的剩余层保持预定的厚度。因此，蚀刻掩模层的剩余层用作衬垫，使得加到纳米压模和半导体衬底上的应力减小。因此，可以抑制在半导体衬底中在半导体衬底上挤压纳米压模时可能引入的晶体缺陷，从而抑制半导体器件的光学特性的劣化。此外，由于可以防止纳米压模受损，所以可以避免诸如更换纳米压模等额外的步骤。

4. 发明授权

US08389395B2 Method for manufacturing semiconductor optical device 有权
标题翻译：制造半导体光学器件的方法
公开(公告)号：US08389395B2
公开(公告)日：2013-03-05
申请号：US13224546
申请日：2011-09-02
申请人： Yukihiro Tsuji
发明人： Yukihiro Tsuji
IPC分类号： H01L21/44
CPC分类号： H01S5/0425 , H01L21/76826 , H01L21/76829 , H01L24/05 , H01L24/45 , H01L24/48 , H01L24/85 , H01L2224/04042 , H01L2224/05166 , H01L2224/05169 , H01L2224/05555 , H01L2224/05644 , H01L2224/45015 , H01L2224/45144 , H01L2224/48463 , H01L2224/48599 , H01L2224/48644 , H01L2224/85203 , H01L2224/85205 , H01L2924/00014 , H01L2924/12043 , H01L2924/3011 , H01S5/227 , H01S2301/176 , H01L2924/2076 , H01L2924/00
摘要： A method for manufacturing includes the steps of forming a BCB resin region on a semiconductor optical device; processing a surface of the BCB resin region with inductively coupled plasma produced with a high-frequency power supply for supplying ICP power and a high-frequency power supply for supplying bias power, thus forming a silicon oxide film on the surface of the BCB resin region and roughening the surface of the BCB resin region with projections and recesses; and forming an electrode pad on the surface of the BCB resin region in direct contact with the silicon oxide film. The surface roughness of the BCB resin region and the thickness of the silicon oxide film on the surface of the BCB resin region are controlled by adjusting the bias power and the ICP power.
摘要翻译：一种制造方法包括在半导体光学器件上形成BCB树脂区域的步骤; 使用用于提供ICP功率的高频电源产生的感应耦合等离子体处理BCB树脂区域的表面和用于提供偏置功率的高频电源，从而在BCB树脂区域的表面上形成氧化硅膜并用突起和凹槽使BCB树脂区域的表面粗糙化; 以及在与氧化硅膜直接接触的BCB树脂区域的表面上形成电极焊盘。通过调整偏置功率和ICP功率来控制BCB树脂区域的表面粗糙度和BCB树脂区域表面上的氧化硅膜的厚度。

5. 发明授权

US07833882B2 Method of producing a semiconductor device by forming an oxide film on a resin layer 有权
标题翻译：通过在树脂层上形成氧化膜来制造半导体器件的方法
公开(公告)号：US07833882B2
公开(公告)日：2010-11-16
申请号：US11651534
申请日：2007-01-10
申请人： Yukihiro Tsuji , Toshio Nomaguchi
发明人： Yukihiro Tsuji , Toshio Nomaguchi
IPC分类号： H01L21/322 , H01L21/469 , H01L21/00
CPC分类号： H01S5/0425 , H01L24/03 , H01L24/05 , H01L24/45 , H01L24/48 , H01L24/85 , H01L2224/04042 , H01L2224/05558 , H01L2224/05644 , H01L2224/05666 , H01L2224/05669 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48463 , H01L2224/48644 , H01L2224/48666 , H01L2224/48669 , H01L2224/85201 , H01L2224/85205 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/0101 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01023 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01088 , H01L2924/10253 , H01L2924/12043 , H01L2924/14 , H01L2924/2076 , H01L2924/30105 , H01S5/2214 , H01S5/227 , H01L2924/00014 , H01L2924/00
摘要： A method of producing a semiconductor device, including: a first plasma processing step of processing a surface of a resin layer laid on a semiconductor element and containing silicon, with a first plasma generated from a gas containing oxygen and fluorine, thereby forming an oxide film; and an electrode pad forming step of forming an electrode pad of a metal on the oxide film.
摘要翻译：一种制造半导体器件的方法，包括：第一等离子体处理步骤，其处理由半导体元件上放置的含有硅的树脂层的表面，并由含有氧和氟的气体产生的第一等离子体形成氧化膜 ; 以及在所述氧化物膜上形成金属的电极焊盘的电极焊盘形成工序。

6. 发明申请

US20070187707A1 Semiconductor device and production method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070187707A1
公开(公告)日：2007-08-16
申请号：US11651534
申请日：2007-01-10
申请人： Yukihiro Tsuji , Toshio Nomaguchi
发明人： Yukihiro Tsuji , Toshio Nomaguchi
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01S5/0425 , H01L24/03 , H01L24/05 , H01L24/45 , H01L24/48 , H01L24/85 , H01L2224/04042 , H01L2224/05558 , H01L2224/05644 , H01L2224/05666 , H01L2224/05669 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48463 , H01L2224/48644 , H01L2224/48666 , H01L2224/48669 , H01L2224/85201 , H01L2224/85205 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/0101 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01023 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01088 , H01L2924/10253 , H01L2924/12043 , H01L2924/14 , H01L2924/2076 , H01L2924/30105 , H01S5/2214 , H01S5/227 , H01L2924/00014 , H01L2924/00
摘要： A method of producing a semiconductor device, comprising: a first plasma processing step of processing a surface of a resin layer laid on a semiconductor element and containing silicon, with a first plasma generated from a gas containing oxygen and fluorine, thereby forming an oxide film; and an electrode pad forming step of forming an electrode pad of a metal on the oxide film.
摘要翻译：一种制造半导体器件的方法，包括：第一等离子体处理步骤，其处理由半导体元件上放置的含有硅的树脂层的表面，以及由含有氧和氟的气体产生的第一等离子体，从而形成氧化膜 ; 以及在所述氧化物膜上形成金属的电极焊盘的电极焊盘形成工序。

7. 发明授权

US08956902B2 Process for manufacturing buried hetero-structure laser diodes 有权
标题翻译：埋入异质结激光二极管的制造工艺
公开(公告)号：US08956902B2
公开(公告)日：2015-02-17
申请号：US13544000
申请日：2012-07-09
申请人： Yukihiro Tsuji
发明人： Yukihiro Tsuji
IPC分类号： H01L21/00 , H01S5/20 , H01S5/227 , H01S5/024 , H01S5/042 , H01S5/22 , H01S5/34
CPC分类号： H01S5/2086 , B82Y20/00 , H01S5/02476 , H01S5/0425 , H01S5/2201 , H01S5/2224 , H01S5/2275 , H01S5/3401 , H01S2301/176 , H01S2304/04
摘要： A process for manufacturing buried hetero-structure laser diodes includes the steps of forming a stacked semiconductor layer on a substrate; forming a mask layer on the stacked semiconductor layer; forming a semiconductor mesa by etching the stacked semiconductor layer through the mask layer; forming an overhang of the mask layer by selectively etching the stacked semiconductor layer of the semiconductor mesa; selectively growing a buried layer on a side surface of the semiconductor mesa while leaving the mask layer on the semiconductor mesa; forming a lateral portion of the buried layer, the lateral portion having a side surface adjacent to the side surface of the semiconductor mesa; after forming the lateral portion of the buried layer, removing the mask layer on the semiconductor mesa; and forming an electrode on a top surface of the semiconductor mesa and on the side surface of the lateral portion of the buried layer.
摘要翻译：埋入异质结激光二极管的制造方法包括在基板上形成层叠半导体层的工序; 在所述堆叠半导体层上形成掩模层; 通过掩模层蚀刻层叠的半导体层来形成半导体台面; 通过选择性地蚀刻半导体台面的堆叠半导体层来形成掩模层的突出端; 选择性地在半导体台面的侧表面上生长掩埋层，同时将掩模层留在半导体台面上; 形成所述掩埋层的侧面部分，所述侧面部分具有与所述半导体台面的侧表面相邻的侧表面; 在形成掩埋层的侧面部分之后，去除半导体台面上的掩模层; 以及在所述半导体台面的顶表面和所述掩埋层的侧部的侧表面上形成电极。

8. 发明授权

US08827685B2 Nano-imprint mold 有权
标题翻译：纳米印模
公开(公告)号：US08827685B2
公开(公告)日：2014-09-09
申请号：US13169139
申请日：2011-06-27
申请人： Yukihiro Tsuji , Masaki Yanagisawa
发明人： Yukihiro Tsuji , Masaki Yanagisawa
IPC分类号： B29C59/02 , B82Y20/00 , B29C43/02 , B29C43/06 , B29C43/14
CPC分类号： B82Y20/00 , B29C43/021 , B29C43/06 , B29C2043/142
摘要： A nano-imprint mold includes a mold base; mold body having a first surface and a second surface opposite the first surface; and an elastic body disposed between a surface of the mold base and the first surface of the mold body, the elastic body being composed of resin. The second surface of the mold body is provided with a nano-imprint pattern. In addition, the elastic body has a bulk modulus lower than a bulk modulus of the mold body.
摘要翻译：纳米压印模具包括模具底座; 模体具有与第一表面相对的第一表面和第二表面; 以及弹性体，其设置在所述模具基座的表面和所述模具体的所述第一表面之间，所述弹性体由树脂构成。模具体的第二表面设置有纳米压印图案。此外，弹性体的体积模量低于模体的体积弹性模量。

9. 发明授权

US08501511B2 Method of manufacturing laser diode 有权
标题翻译：制造激光二极管的方法
公开(公告)号：US08501511B2
公开(公告)日：2013-08-06
申请号：US13224493
申请日：2011-09-02
申请人： Yukihiro Tsuji
发明人： Yukihiro Tsuji
IPC分类号： H01L21/00
CPC分类号： H01S5/209 , H01S5/12 , H01S5/2226 , H01S5/2275 , H01S2304/04
摘要： Manufacturing a laser diode includes growing an active layer, a first InP layer, and a diffraction grating layer; forming an alignment mark having a recess by etching the diffraction grating layer and the first InP layer; forming a first etching mask; forming a diffraction grating in the diffraction grating layer using the first etching mask; forming a modified layer containing InAsP on a surface of the alignment mark recess by supplying a first source gas containing As and a second source gas containing P; growing a second InP layer on the diffraction grating layer and on the alignment mark; forming a second etching mask on the second InP layer; selectively etching the second InP layer embedded in the recess of the alignment mark through the second etching mask by using the modified layer serving as an etching stopper; and forming a waveguide structure using the alignment mark.
摘要翻译：制造激光二极管包括生长活性层，第一InP层和衍射光栅层; 通过蚀刻所述衍射光栅层和所述第一InP层来形成具有凹部的对准标记; 形成第一蚀刻掩模; 使用所述第一蚀刻掩模在所述衍射光栅层中形成衍射光栅; 通过供给含有As的第一源气体和含有P的第二源气体，在对准标记凹部的表面上形成含有InAsP的改性层; 在衍射光栅层和对准标记上生长第二InP层; 在所述第二InP层上形成第二蚀刻掩模; 通过使用用作蚀刻阻挡层的改性层，通过第二蚀刻掩模选择性地蚀刻嵌入在对准标记的凹部中的第二InP层; 以及使用所述对准标记形成波导结构。

10. 发明授权

US08153530B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08153530B2
公开(公告)日：2012-04-10
申请号：US12314603
申请日：2008-12-12
申请人： Yukihiro Tsuji
发明人： Yukihiro Tsuji
IPC分类号： H01L21/302
CPC分类号： G02B6/12007 , B82Y10/00 , B82Y40/00 , G02B5/1857 , G03F7/0002 , H01S5/12 , H01S5/1203 , H01S5/1231 , H01S5/16 , H01S5/2275
摘要： In this method of manufacturing a semiconductor device, the remaining layer of an etching mask layer remains in a predetermined thickness when the stamping face of a nano-stamper is pressed on the surface of the etching mask layer. Therefore, the remaining layer of the etching mask layer functions as a cushion so that the stress added to the nano-stamper and the semiconductor substrate is reduced. Accordingly, the crystal defect that might otherwise be introduced in the semiconductor substrate in pressing the nano-stamper on the semiconductor substrate can be restrained, resulting in suppression of the degradation of optical characteristics of the semiconductor device. Also, since the nano-stamper can be prevented from being damaged, extra steps such as the replacement of the nano-stamper can be avoided.
摘要翻译：在这种制造半导体器件的方法中，当在蚀刻掩模层的表面上按压纳米压模的冲压面时，蚀刻掩模层的剩余层保持预定的厚度。因此，蚀刻掩模层的剩余层用作衬垫，使得加到纳米压模和半导体衬底上的应力减小。因此，可以抑制在半导体衬底中在半导体衬底上挤压纳米压模时可能引入的晶体缺陷，从而抑制半导体器件的光学特性的劣化。此外，由于可以防止纳米压模受损，所以可以避免诸如更换纳米压模等额外的步骤。

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