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1. 发明授权

US06367493B2 Potted transducer array with matching network in a multiple pass configuration 失效
公开(公告)号：US06367493B2
公开(公告)日：2002-04-09
申请号：US09829634
申请日：2001-04-10
申请人： Malcolm R. Schuler , Robert F. Longenberger , Rodney S. Ridley , Thomas E. Grebs , Jason R. Trost , Raymond J. Webb , Michael A. Caravaggio , Terry L. Fenstermacher
发明人： Malcolm R. Schuler , Robert F. Longenberger , Rodney S. Ridley , Thomas E. Grebs , Jason R. Trost , Raymond J. Webb , Michael A. Caravaggio , Terry L. Fenstermacher
IPC分类号： B08B312
CPC分类号： C02F1/36 , B08B3/12 , C02F1/78 , C02F2103/346 , C02F2201/782 , Y10S134/902
摘要： The invention provides a pair of parallel megasonic transducers that generate parallel columns of megasonic waves across a cleaning container. Semiconductor wafers move back and forth transverse to the columns. The transducers have their back side potted with a silicone elastomer to prevent corrosion. In another embodiment megasonic waves from in-line transducers are dispersed with a cylindrical quartz rod. Water is enriched with ozone by pumping ozone under pressure through a filter into sealed housing of deionized water.

2. 发明授权

US06314974B1 Potted transducer array with matching network in a multiple pass configuration 失效
标题翻译：具有匹配网络的多通道配置的盆式传感器阵列
公开(公告)号：US06314974B1
公开(公告)日：2001-11-13
申请号：US09344867
申请日：1999-06-28
申请人： Malcolm R. Schuler , Robert F. Longenberger , Rodney S. Ridley , Thomas E. Grebs , Jason R. Trost , Raymond J. Webb , Michael A. Caravaggio , Terry L. Fenstermacher
发明人： Malcolm R. Schuler , Robert F. Longenberger , Rodney S. Ridley , Thomas E. Grebs , Jason R. Trost , Raymond J. Webb , Michael A. Caravaggio , Terry L. Fenstermacher
IPC分类号： B08B312
CPC分类号： C02F1/36 , B08B3/12 , C02F1/78 , C02F2103/346 , C02F2201/782 , Y10S134/902
摘要： The invention provides a pair of parallel megasonic transducers that generate parallel columns of megasonic waves across a cleaning container. Semiconductor wafers move back and forth transverse to the columns. The transducers have their back side potted with a silicone elastomer to prevent corrosion. In another embodiment megasonic waves from in-line transducers are dispersed with a cylindrical quartz rod. Water is enriched with ozone by pumping ozone under pressure through a filter into sealed housing of deionized water.
摘要翻译：本发明提供了一对平行的兆声波换能器，其在清洁容器上产生平行的兆声波波列。半导体晶片横向往列移动。传感器的背面装有硅橡胶以防止腐蚀。在另一个实施例中，来自在线换能器的兆声波通过圆柱形石英棒分散。通过将压力下的臭氧通过过滤器将臭氧泵送到去离子水的密封壳体中，从而富含臭氧。

3. 发明授权

US06309952B1 Process for forming high voltage junction termination extension oxide 失效
标题翻译：用于形成高压结端接延长氧化物的工艺
公开(公告)号：US06309952B1
公开(公告)日：2001-10-30
申请号：US09167177
申请日：1998-10-06
申请人： Rodney S. Ridley , Jason R. Trost , Raymond J. Webb
发明人： Rodney S. Ridley , Jason R. Trost , Raymond J. Webb
IPC分类号： H01L21425
CPC分类号： H01L21/02238 , H01L21/02255 , H01L21/0332 , H01L21/0337 , H01L21/2253 , H01L21/266 , H01L21/31662 , H01L29/0619
摘要： A process for forming a junction termination extension (JTE) oxide having reduced total oxide charge and SiO2—Si interface trap density parameters uses precursor densified thin oxide layers to improve the quality of subsequently formed thicker oxide layers, and multiple anneals to remove implant damage and set geometry parameters. After formation of a first dual oxide layer, and a post-oxidation anneal, the oxide is patterned and JTE regions are implanted. Implant-based near surface crystalline damage is annealed out in a non-oxidizing ambient, and JTE dopants are partially driven into adjoining material of the substrate. A thin dense bulk precursor oxide layer is grown on the exposed JTE dopant-implanted surface portions of the substrate, followed by forming the bulk of the JTE oxide in a steam or wet oxygen atmosphere. The substrate is then annealed in a non-oxidizing ambient, to cause a further drive-in of the JTE dopants. The associated reduction in Qox and Dit improves high voltage edge stability.
摘要翻译：用于形成具有降低的总氧化物电荷和SiO 2 -Si界面陷阱密度参数的连接终止延伸（JTE）氧化物的方法使用前体致密的薄氧化物层来改善随后形成的较厚氧化物层的质量，以及多次退火以去除植入物损伤和设置几何参数。在形成第一双氧化物层和后氧化退火之后，对氧化物进行图案化并注入JTE区域。基于种植体的近表面结晶损伤在非氧化环境中退火，并且JTE掺杂剂被部分驱动到基底的相邻材料中。在衬底的暴露的JTE掺杂剂注入的表面部分上生长薄的密集体前体氧化物层，然后在蒸汽或湿氧气氛中形成大部分JTE氧化物。然后将衬底在非氧化环境中退火，以引起JTE掺杂剂的进一步驱入。相关的Qox和Dit降低提高了高电压边缘的稳定性。

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