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    • 4. 发明授权
    • Method of manufacturing a motion sensor
    • 制作运动传感器的方法
    • US5447601A
    • 1995-09-05
    • US222817
    • 1994-04-05
    • Timothy S. Norris
    • Timothy S. Norris
    • G01C19/5684G01P15/08G01P15/125H01L29/84H01L21/302
    • G01C19/5684G01P15/0802Y10S148/135
    • The method comprises the steps of providing a substrate wafer (10); depositing a first layer of resist (12) upon the substrate wafer (10); removing selected areas of the first resist layer (12), thereby to provide first etch windows; forming first cavities (16) in the substrate wafer (10) by a first etching process through the first windows; bonding a relatively thick membrane wafer (24) to the substrate wafer (10), thereby covering the cavities (16); polishing the surface of the relatively thick membrane wafer (24) thereby to produce a relatively thin membrane (24a); depositing a second layer of resist (33) on the relatively thin membrane (24a); removing selected areas of the second deposited resist layer, thereby to provide second etch windows (40); etching away the relatively thin membrane (24a) in the region of the second etch windows (40) until the first cavities (16) are exposed, thereby to form in the relatively thin membrane (24a) a free standing resonator structure (18 ) suspended on a plurality of compliant beam mounts (38) extending from a fixed portion (50).
    • 该方法包括以下步骤:提供衬底晶片(10); 在所述衬底晶片(10)上沉积第一抗蚀剂层(12); 去除第一抗蚀剂层(12)的选定区域,从而提供第一蚀刻窗口; 通过所述第一窗口的第一蚀刻工艺在所述基板晶片(10)中形成第一空腔(16); 将相对厚的膜晶片(24)接合到基板晶片(10),从而覆盖空腔(16); 抛光相对厚的膜晶片(24)的表面,从而产生相对薄的膜(24a); 在所述相对薄的膜(24a)上沉积第二层抗蚀剂(33); 去除第二沉积抗蚀剂层的选定区域,从而提供第二蚀刻窗口(40); 在第二蚀刻窗口(40)的区域中蚀刻相对薄的膜(24a)直到第一空腔(16)暴露,从而在相对薄的膜(24a)中形成悬置的自立式共振器结构(18) 在从固定部分(50)延伸的多个柔性梁安装件(38)上。