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1. 发明申请

US20110120374A1 System and Method for Mitigating Oxide Growth in a Gate Dielectric 审中-公开
标题翻译：降低栅极电介质中氧化物生长的系统和方法
公开(公告)号：US20110120374A1
公开(公告)日：2011-05-26
申请号：US13017828
申请日：2011-01-31
申请人： Malcolm J. Bevan , Haowen Bu , Hiroaki Niimi , Husam N. Alshareef
发明人： Malcolm J. Bevan , Haowen Bu , Hiroaki Niimi , Husam N. Alshareef
IPC分类号： H01L21/469
CPC分类号： H01L21/28158 , C23C16/45557 , C23C16/4582 , H01J37/32752 , H01J37/32825 , H01J37/32899 , H01J2237/3321 , H01L21/02181 , H01L21/0223 , H01L21/02255 , H01L21/02318 , H01L21/02323 , H01L21/02326 , H01L21/02329 , H01L21/02332 , H01L21/0234 , H01L21/28035 , H01L21/28167 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28229 , H01L21/3105 , H01L21/31604 , H01L21/318 , H01L21/3205 , H01L21/324 , H01L21/67161 , H01L21/67167 , H01L21/67196 , H01L21/67201 , H01L21/6776 , H01L29/42364 , H01L29/4908 , H01L29/4916 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66477 , H01L29/78
摘要： Oxide growth of a gate dielectric layer that occurs between processes used in the fabrication of a gate dielectric structure can be reduced. The reduction in oxide growth can be achieved by maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth of the gate dielectric layer between at least two sequential process steps used in the fabrication the gate dielectric structure. Maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth also improves the uniformity of nitrogen implanted in the gate dielectric.
摘要翻译：可以减少在制造栅极电介质结构中使用的工艺之间发生的栅极介电层的氧化物生长。氧化物生长的减少可以通过将栅极电介质层保持在有效的方式来实现，以在制造栅极电介质结构中的至少两个顺序的工艺步骤之间减轻栅极电介质层的氧化物生长。维持栅极电介质层在有效减少氧化物生长的环境中也改善了注入栅电介质的氮的均匀性。

2. 发明授权

US09177806B2 System and method for mitigating oxide growth in a gate dielectric 有权
标题翻译：用于减轻栅极电介质中的氧化物生长的系统和方法
公开(公告)号：US09177806B2
公开(公告)日：2015-11-03
申请号：US13017828
申请日：2011-01-31
申请人： Malcolm J. Bevan , Haowen Bu , Hiroaki Niimi , Husam N. Alshareef
发明人： Malcolm J. Bevan , Haowen Bu , Hiroaki Niimi , Husam N. Alshareef
IPC分类号： H01J37/00 , H01L21/00 , H01L21/28 , H01L21/316 , H01L21/318 , H01L29/51 , H01L29/78 , H01L29/49
CPC分类号： H01L21/28158 , C23C16/45557 , C23C16/4582 , H01J37/32752 , H01J37/32825 , H01J37/32899 , H01J2237/3321 , H01L21/02181 , H01L21/0223 , H01L21/02255 , H01L21/02318 , H01L21/02323 , H01L21/02326 , H01L21/02329 , H01L21/02332 , H01L21/0234 , H01L21/28035 , H01L21/28167 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28229 , H01L21/3105 , H01L21/31604 , H01L21/318 , H01L21/3205 , H01L21/324 , H01L21/67161 , H01L21/67167 , H01L21/67196 , H01L21/67201 , H01L21/6776 , H01L29/42364 , H01L29/4908 , H01L29/4916 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66477 , H01L29/78
摘要： Oxide growth of a gate dielectric layer that occurs between processes used in the fabrication of a gate dielectric structure can be reduced. The reduction in oxide growth can be achieved by maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth of the gate dielectric layer between at least two sequential process steps used in the fabrication the gate dielectric structure. Maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth also improves the uniformity of nitrogen implanted in the gate dielectric.
摘要翻译：可以减少在制造栅极电介质结构中使用的工艺之间发生的栅极介电层的氧化物生长。氧化物生长的减少可以通过将栅极电介质层保持在有效的方式来实现，以在制造栅极电介质结构中的至少两个顺序的工艺步骤之间减轻栅极电介质层的氧化物生长。维持栅极电介质层在有效减少氧化物生长的环境中也改善了注入栅电介质的氮的均匀性。

3. 发明授权

US06921703B2 System and method for mitigating oxide growth in a gate dielectric 有权
标题翻译：用于减轻栅极电介质中的氧化物生长的系统和方法
公开(公告)号：US06921703B2
公开(公告)日：2005-07-26
申请号：US10436848
申请日：2003-05-13
申请人： Malcolm J. Bevan , Haowen Bu , Hiroaki Niimi , Husam N. Alshareef
发明人： Malcolm J. Bevan , Haowen Bu , Hiroaki Niimi , Husam N. Alshareef
IPC分类号： H01L21/28 , H01L29/49 , H01L29/51 , H01L29/78 , H01L21/336
CPC分类号： H01L21/28202 , H01L29/4908 , H01L29/517 , H01L29/518 , H01L29/78
摘要： Oxide growth of a gate dielectric layer that occurs between processes used in the fabrication of a gate dielectric structure can be reduced. The reduction in oxide growth can be achieved by maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth of the gate dielectric layer between at least two sequential process steps used in the fabrication the gate dielectric structure. Maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth also improves the uniformity of nitrogen implanted in the gate dielectric.
摘要翻译：可以减少在制造栅极电介质结构中使用的工艺之间发生的栅极介电层的氧化物生长。氧化物生长的减少可以通过将栅极电介质层保持在有效的方式来实现，以在制造栅极电介质结构中的至少两个顺序的工艺步骤之间减轻栅极电介质层的氧化物生长。维持栅极电介质层在有效减少氧化物生长的环境中也改善了注入栅电介质的氮的均匀性。

4. 发明授权

US07906441B2 System and method for mitigating oxide growth in a gate dielectric 有权
标题翻译：用于减轻栅极电介质中的氧化物生长的系统和方法
公开(公告)号：US07906441B2
公开(公告)日：2011-03-15
申请号：US11931529
申请日：2007-10-31
申请人： Malcolm J. Bevan , Haowen Bu , Hiroaki Niimi , Husam N. Alshareef
发明人： Malcolm J. Bevan , Haowen Bu , Hiroaki Niimi , Husam N. Alshareef
IPC分类号： H01L21/31 , H01L21/336
CPC分类号： H01L21/28158 , C23C16/45557 , C23C16/4582 , H01J37/32752 , H01J37/32825 , H01J37/32899 , H01J2237/3321 , H01L21/02181 , H01L21/0223 , H01L21/02255 , H01L21/02318 , H01L21/02323 , H01L21/02326 , H01L21/02329 , H01L21/02332 , H01L21/0234 , H01L21/28035 , H01L21/28167 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28229 , H01L21/3105 , H01L21/31604 , H01L21/318 , H01L21/3205 , H01L21/324 , H01L21/67161 , H01L21/67167 , H01L21/67196 , H01L21/67201 , H01L21/6776 , H01L29/42364 , H01L29/4908 , H01L29/4916 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66477 , H01L29/78
摘要： Oxide growth of a gate dielectric layer that occurs between processes used in the fabrication of a gate dielectric structure can be reduced. The reduction in oxide growth can be achieved by maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth of the gate dielectric layer between at least two sequential process steps used in the fabrication the gate dielectric structure. Maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth also improves the uniformity of nitrogen implanted in the gate dielectric.
摘要翻译：可以减少在制造栅极电介质结构中使用的工艺之间发生的栅极介电层的氧化物生长。氧化物生长的减少可以通过将栅极电介质层保持在有效的方式来实现，以在制造栅极电介质结构中的至少两个顺序的工艺步骤之间减轻栅极电介质层的氧化物生长。维持栅极电介质层在有效减少氧化物生长的环境中也改善了注入栅电介质的氮的均匀性。

5. 发明授权

US06924239B2 Method for removal of hydrocarbon contamination on gate oxide prior to non-thermal nitridation using “spike” radical oxidation 有权
标题翻译：使用“尖峰”自由基氧化在非热氮化之前去除栅极氧化物上的烃污染的方法
公开(公告)号：US06924239B2
公开(公告)日：2005-08-02
申请号：US10684897
申请日：2003-10-14
申请人： Hiroaki Niimi , Husam N. Alshareef , Ajith Varghese
发明人： Hiroaki Niimi , Husam N. Alshareef , Ajith Varghese
IPC分类号： H01L21/20 , H01L21/28 , H01L21/302 , H01L21/306 , H01L21/31 , H01L21/314 , H01L21/316 , H01L21/36
CPC分类号： H01L21/28202 , H01L21/02046 , H01L21/28185 , H01L21/3144 , H01L21/31662
摘要： The present invention is generally directed towards a method for removing hydrocarbon contamination from a substrate prior to a nitridation step, therein providing for a generally uniform nitridation of the substrate. The method comprises placing the substrate in a process chamber and flowing an oxygen-source gas into the process chamber. A first plasma is formed in the process chamber for a first predetermined amount of time, wherein the hydrocarbons combine with one or more species of the oxygen-source gas in radical form to form product gases. The gases are removed from the process chamber and a nitrogen-source gas is flowed into the process chamber. A second plasma is then formed in the process chamber for a second predetermined amount of time, therein nitriding the substrate in a significantly uniform manner.
摘要翻译：本发明一般涉及一种在氮化步骤之前从基底去除烃类污染物的方法，其中提供基底的大致均匀的氮化。该方法包括将基板放置在处理室中并将氧源气体流入处理室。第一等离子体在处理室中形成第一预定量的时间，其中烃与一种或多种以自由基形式的氧源气体组合以形成产物气体。气体从处理室中移出，氮源气体流入处理室。然后在处理室中形成第二等离子体第二预定量的时间，其中以显着均匀的方式氮化基板。

6. 发明授权

US06730566B2 Method for non-thermally nitrided gate formation for high voltage devices 有权
标题翻译：高压器件非热氮化栅极形成方法
公开(公告)号：US06730566B2
公开(公告)日：2004-05-04
申请号：US10264729
申请日：2002-10-04
申请人： Hiroaki Niimi , Rajesh Khamankar , Husam N. Alshareef
发明人： Hiroaki Niimi , Rajesh Khamankar , Husam N. Alshareef
IPC分类号： H01L218234
CPC分类号： H01L21/823462 , Y10S438/92
摘要： A method is provided for non-thermally nitrided gate formation of high voltage transistor devices. The non-thermally nitrided gate formation is useful in the formation of dual thickness gate dielectric structures. The non-thermally nitrided gate formation comprises nitridation to introduce nitrogen atoms into the gate dielectric layer of the high voltage transistor devices to mitigate leakage associated with the high voltage transistor devices. The nitridation of the gate dielectric layer damages the surface of the gate dielectric layer. The damaged surface of the gate dielectric layer is removed by a relatively low temperature re-oxidation process. The low temperature re-oxidation process minimizes nitrogen loss during a subsequent photoresist stripping process and mitigates film densification, such that the structure can be readily etched by standard etching chemicals in subsequent processing.
摘要翻译：提供了用于高压晶体管器件的非热氮化栅极形成的方法。非热氮化栅极形成可用于双厚度栅极电介质结构的形成。非热氮化栅极形成包括氮化以将氮原子引入到高压晶体管器件的栅极介电层中，以减轻与高压晶体管器件相关的泄漏。栅极电介质层的氮化破坏了栅极电介质层的表面。通过相对较低温度的再氧化工艺去除栅介电层的受损表面。低温再氧化工艺在随后的光致抗蚀剂剥离过程中使氮损失最小化并减轻膜致密化，使得结构可以在随后的处理中通过标准蚀刻化学品容易地蚀刻。

7. 发明授权

US07345001B2 Gate dielectric having a flat nitrogen profile and method of manufacture therefor 有权
标题翻译：具有平坦氮分布的栅极电介质及其制造方法
公开(公告)号：US07345001B2
公开(公告)日：2008-03-18
申请号：US10875482
申请日：2004-06-24
申请人： Hiroaki Niimi , Husam N. Alshareef , Rajesh Khamankar , Toan Tran
发明人： Hiroaki Niimi , Husam N. Alshareef , Rajesh Khamankar , Toan Tran
IPC分类号： H01L29/72
CPC分类号： H01L21/3115 , H01L21/0214 , H01L21/02329 , H01L21/0234 , H01L21/28202 , H01L21/3144 , H01L29/512 , H01L29/518 , H01L29/6656
摘要： The present invention provides a gate dielectric having a flat nitrogen profile, a method of manufacture therefor, and a method of manufacturing an integrated circuit including the flat nitrogen profile. In one embodiment, the method of manufacturing the gate dielectric includes forming a gate dielectric layer (410) on a substrate (310), and subjecting the gate dielectric layer (410) to a nitrogen containing plasma process (510), wherein the nitrogen containing plasma process (510) has a ratio of helium to nitrogen of 3:1 or greater.
摘要翻译：本发明提供一种具有平坦氮分布的栅极电介质及其制造方法，以及制造包含平坦氮分布的集成电路的方法。在一个实施例中，制造栅极电介质的方法包括在衬底（310）上形成栅极电介质层（410），并对栅极电介质层（410）施加含氮等离子体工艺（510），其中含氮等离子体工艺（510）的氦与氮的比例为3:1或更高。

8. 发明申请

US20080050882A1 System and Method for Mitigating Oxide Growth in a Gate Dielectric 有权
标题翻译：降低栅极电介质中氧化物生长的系统和方法
公开(公告)号：US20080050882A1
公开(公告)日：2008-02-28
申请号：US11931529
申请日：2007-10-31
申请人： Malcolm Bevan , Haowen Bu , Hiroaki Niimi , Husam Alshareef
发明人： Malcolm Bevan , Haowen Bu , Hiroaki Niimi , Husam Alshareef
IPC分类号： H01L21/336 , H01L21/4763
CPC分类号： H01L21/28158 , C23C16/45557 , C23C16/4582 , H01J37/32752 , H01J37/32825 , H01J37/32899 , H01J2237/3321 , H01L21/02181 , H01L21/0223 , H01L21/02255 , H01L21/02318 , H01L21/02323 , H01L21/02326 , H01L21/02329 , H01L21/02332 , H01L21/0234 , H01L21/28035 , H01L21/28167 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28229 , H01L21/3105 , H01L21/31604 , H01L21/318 , H01L21/3205 , H01L21/324 , H01L21/67161 , H01L21/67167 , H01L21/67196 , H01L21/67201 , H01L21/6776 , H01L29/42364 , H01L29/4908 , H01L29/4916 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66477 , H01L29/78
摘要： Oxide growth of a gate dielectric layer that occurs between processes used in the fabrication of a gate dielectric structure can be reduced. The reduction in oxide growth can be achieved by maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth of the gate dielectric layer between at least two sequential process steps used in the fabrication the gate dielectric structure. Maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth also improves the uniformity of nitrogen implanted in the gate dielectric.
摘要翻译：可以减少在制造栅极电介质结构中使用的工艺之间发生的栅极介电层的氧化物生长。氧化物生长的减少可以通过将栅极电介质层保持在有效的方式来实现，以在制造栅极电介质结构中的至少两个顺序的工艺步骤之间减轻栅极电介质层的氧化物生长。维持栅极电介质层在有效减少氧化物生长的环境中也改善了注入栅电介质的氮的均匀性。

9. 发明申请

US20050221564A1 System and method for mitigating oxide growth in a gate dielectric 审中-公开
公开(公告)号：US20050221564A1
公开(公告)日：2005-10-06
申请号：US11145674
申请日：2005-06-06
申请人： Malcolm Bevan , Haowen Bu , Hiroaki Niimi , Husam Alshareef
发明人： Malcolm Bevan , Haowen Bu , Hiroaki Niimi , Husam Alshareef
IPC分类号： H01L21/28 , H01L29/49 , H01L29/51 , H01L29/78 , H01L21/336
CPC分类号： H01L21/28202 , H01L29/4908 , H01L29/517 , H01L29/518 , H01L29/78
摘要： Oxide growth of a gate dielectric layer that occurs between processes used in the fabrication of a gate dielectric structure can be reduced. The reduction in oxide growth can be achieved by maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth of the gate dielectric layer between at least two sequential process steps used in the fabrication the gate dielectric structure. Maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth also improves the uniformity of nitrogen implanted in the gate dielectric.

10. 发明授权

US08643113B2 Structure and method for metal gate stack oxygen concentration control using an oxygen diffusion barrier layer and a sacrificial oxygen gettering layer 有权
标题翻译：使用氧扩散阻挡层和牺牲吸氧层的金属栅堆叠氧浓度控制的结构和方法
公开(公告)号：US08643113B2
公开(公告)日：2014-02-04
申请号：US12275812
申请日：2008-11-21
申请人： James Joseph Chambers , Hiroaki Niimi
发明人： James Joseph Chambers , Hiroaki Niimi
IPC分类号： H01L21/70
CPC分类号： H01L21/823842 , H01L21/28088 , H01L21/28185 , H01L21/3221 , H01L21/823807 , H01L21/823814 , H01L21/823857 , H01L27/092 , H01L27/11 , H01L29/401 , H01L29/42364 , H01L29/51 , H01L29/517 , H01L29/518 , H01L29/66545 , H01L29/7833
摘要： A process is disclosed of forming metal replacement gates for NMOS and PMOS transistors with oxygen in the PMOS metal gates and metal atom enrichment in the NMOS gates such that the PMOS gates have effective work functions above 4.85 eV and the NMOS gates have effective work functions below 4.25 eV. Metal work function layers in both the NMOS and PMOS gates are oxidized to increase their effective work functions to the desired PMOS range. An oxygen diffusion blocking layer is formed over the PMOS gate and an oxygen getter is formed over the NMOS gates. A getter anneal extracts the oxygen from the NMOS work function layers and adds metal atom enrichment to the NMOS work function layers, reducing their effective work functions to the desired NMOS range. Processes and materials for the metal work function layers, the oxidation process and oxygen gettering are disclosed.
摘要翻译：公开了一种用于在PMOS金属栅中的氧和NMOS栅极中的金属原子富集的NMOS和PMOS晶体管形成金属替代栅极的工艺，使得PMOS栅极具有高于4.85eV的有效功函数，并且NMOS栅极具有以下有效的功函数 4.25 eV。 NMOS和PMOS栅极中的金属功函数层被氧化，以将它们的有效功函数增加到期望的PMOS范围。在PMOS栅极上形成氧扩散阻挡层，在NMOS栅极上形成氧吸气剂。吸气剂退火从NMOS功能层提取氧气，并将金属原子富集添加到NMOS功能层，将其有效功函数降低到所需的NMOS范围。公开了金属加工功能层的工艺和材料，氧化工艺和吸氧剂。

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