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1. 发明申请

US20080137695A1 OPTICAL SEMICONDUCTOR DEVICE AND OPTICAL WAVEGUIDE 有权
标题翻译：光学半导体器件和光波导
公开(公告)号：US20080137695A1
公开(公告)日：2008-06-12
申请号：US11950447
申请日：2007-12-05
申请人： Makoto Takahashi , Hideo Arimoto , Kazuhiko Hosomi , Toshihiko Fukamachi , Shigeki Makino , Yasunobu Matsuoka , Toshiki Sugawara
发明人： Makoto Takahashi , Hideo Arimoto , Kazuhiko Hosomi , Toshihiko Fukamachi , Shigeki Makino , Yasunobu Matsuoka , Toshiki Sugawara
IPC分类号： H01S5/026 , G02B6/10
CPC分类号： H01S5/026 , G02B6/1228 , G02B6/125 , H01S5/021 , H01S5/028 , H01S5/1014 , H01S5/12 , H01S5/3224
摘要： A core of an optical waveguide and a core of a waveguide type optical device are adjacently disposed, and a layer is continuously formed at one end of the core of the waveguide type optical device, wherein an effective refractive index of the layer decreases toward a long axis direction of the optical waveguide stripe.
摘要翻译：波导型光学器件的光波导和芯的芯相邻布置，并且在波导型光学器件的芯的一端连续形成层，其中该层的有效折射率朝向长度减小光波导条的轴方向。

2. 发明授权

US08965153B2 Optical semiconductor device and optical waveguide 有权
标题翻译：光半导体器件和光波导
公开(公告)号：US08965153B2
公开(公告)日：2015-02-24
申请号：US11950447
申请日：2007-12-05
申请人： Makoto Takahashi , Hideo Arimoto , Kazuhiko Hosomi , Toshihiko Fukamachi , Shigeki Makino , Yasunobu Matsuoka , Toshiki Sugawara
发明人： Makoto Takahashi , Hideo Arimoto , Kazuhiko Hosomi , Toshihiko Fukamachi , Shigeki Makino , Yasunobu Matsuoka , Toshiki Sugawara
IPC分类号： G02B6/26 , H01S5/026 , G02B6/122 , G02B6/125 , H01S5/02 , H01S5/028 , H01S5/10 , H01S5/12 , H01S5/32
CPC分类号： H01S5/026 , G02B6/1228 , G02B6/125 , H01S5/021 , H01S5/028 , H01S5/1014 , H01S5/12 , H01S5/3224
摘要： A core of an optical waveguide and a core of a waveguide type optical device are adjacently disposed, and a layer is continuously formed at one end of the core of the waveguide type optical device, wherein an effective refractive index of the layer decreases toward a long axis direction of the optical waveguide stripe.
摘要翻译：波导型光学器件的光波导和芯的芯相邻布置，并且在波导型光学器件的芯的一端连续形成层，其中该层的有效折射率朝向长度减小光波导条的轴方向。

3. 发明申请

US20070014505A1 Micro sensor device 失效
标题翻译：微传感器装置
公开(公告)号：US20070014505A1
公开(公告)日：2007-01-18
申请号：US11485294
申请日：2006-07-13
申请人： Kazuhiko Hosomi , Hiroji Yamada , Toshio Katsuyama , Yasuhiko Arakawa , Toshihiko Fukamachi
发明人： Kazuhiko Hosomi , Hiroji Yamada , Toshio Katsuyama , Yasuhiko Arakawa , Toshihiko Fukamachi
IPC分类号： G02B6/00
CPC分类号： G02B6/12004 , G01J3/26 , G01N21/4133 , G02B2006/1213 , G02B2006/12164
摘要： The present invention provides an ultra-mini and low cost refractive index measuring device applicable to biochemical measurements of an extremely minute amount of a sample. The refractive index measuring device uses a photonic crystal without any requirement of an external spectrograph or the like. The micro sensor device according to the present invention includes a light source emitting light with a single wavelength, a microcavity in which a resonant wavelength varies depending on a position thereof. A refractive index of a material to be measured is measured based on positional information by detecting a transmitting position of light changing in response to a change of a refractive index of the measured material. The micro sensor device according to the present invention enables measurement of a refractive index of a material to be measured without using a large-scale spectrograph.
摘要翻译：本发明提供了一种适用于极微量样品的生物化学测量的超小型和低成本折射率测量装置。折射率测量装置使用光子晶体，而不需要外部光谱仪等。根据本发明的微型传感器装置包括发射具有单一波长的光的光源，其中谐振波长根据其位置而变化的微腔。通过检测响应于测量材料的折射率的变化而变化的光的透射位置，基于位置信息来测量要测量的材料的折射率。根据本发明的微型传感器装置能够在不使用大规模光谱仪的情况下测量待测材料的折射率。

4. 发明授权

US07450789B2 Micro sensor device 失效
标题翻译：微传感器装置
公开(公告)号：US07450789B2
公开(公告)日：2008-11-11
申请号：US11485294
申请日：2006-07-13
申请人： Kazuhiko Hosomi , Hiroji Yamada , Toshio Katsuyama , Yasuhiko Arakawa , Toshihiko Fukamachi
发明人： Kazuhiko Hosomi , Hiroji Yamada , Toshio Katsuyama , Yasuhiko Arakawa , Toshihiko Fukamachi
IPC分类号： G02B6/00
CPC分类号： G02B6/12004 , G01J3/26 , G01N21/4133 , G02B2006/1213 , G02B2006/12164
摘要： The present invention provides an ultra-mini and low cost refractive index measuring device applicable to biochemical measurements of an extremely minute amount of a sample. The refractive index measuring device uses a photonic crystal without any requirement of an external spectrograph or the like.The micro sensor device according to the present invention includes a light source emitting light with a single wavelength, a microcavity in which a resonant wavelength varies depending on a position thereof. A refractive index of a material to be measured is measured based on positional information by detecting a transmitting position of light changing in response to a change of a refractive index of the measured material. The micro sensor device according to the present invention enables measurement of a refractive index of a material to be measured without using a large-scale spectrograph.
摘要翻译：本发明提供了一种适用于极微量样品的生物化学测量的超小型和低成本折射率测量装置。折射率测量装置使用光子晶体，而不需要外部光谱仪等。根据本发明的微型传感器装置包括发射具有单一波长的光的光源，其中谐振波长根据其位置而变化的微腔。通过检测响应于测量材料的折射率的变化而变化的光的透射位置，基于位置信息来测量要测量的材料的折射率。根据本发明的微型传感器装置能够在不使用大规模光谱仪的情况下测量待测材料的折射率。

5. 发明申请

US20090316745A1 OPTICAL MODULE 审中-公开
标题翻译：光学模块
公开(公告)号：US20090316745A1
公开(公告)日：2009-12-24
申请号：US12465726
申请日：2009-05-14
申请人： Toshihiko Fukamachi , Takuma Ban , Toshiki Sugawara
发明人： Toshihiko Fukamachi , Takuma Ban , Toshiki Sugawara
IPC分类号： H01S5/026 , H01S5/183
CPC分类号： H01S5/18 , H01S5/0071 , H01S5/02212 , H01S5/0683 , H01S5/1085
摘要： A laser diode has a horizontal cavity and a mirror attached to the horizontal cavity at an angle of substantially 45° or substantially 135°. The laser diode is mounted on a stem substantially horizontally with taking light vertically emitted to the horizontal cavity as an optical signal, and light horizontally emitted as an optical signal for monitoring, respectively. A photodetector is mounted on the stem substantially orthogonally and so as to let in the optical signal for monitoring.
摘要翻译：激光二极管具有以大致45°或大致135°的角度附接到水平空腔的水平空腔和反射镜。激光二极管基本上水平地安装在茎上，以垂直发射到水平腔的光作为光信号，以及水平地发射的光作为光信号进行监测。光电检测器基本正交地安装在阀杆上，以便让光信号进行监控。

6. 发明申请

US20080317422A1 OPTICAL INTEGRATED DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：光学集成装置及其制造方法
公开(公告)号：US20080317422A1
公开(公告)日：2008-12-25
申请号：US11843682
申请日：2007-08-23
申请人： TAKESHI KITATANI , Kazunori Shinoda , Takashi Shiota , Shigeki Makino , Toshihiko Fukamachi
发明人： TAKESHI KITATANI , Kazunori Shinoda , Takashi Shiota , Shigeki Makino , Toshihiko Fukamachi
IPC分类号： G02B6/10 , H01L21/02
CPC分类号： G02B6/136 , G02B2006/12078 , G02B2006/12097 , G02B2006/12121 , G02B2006/12128 , G02B2006/12142
摘要： In the optical integrated devices with ridge waveguide structure based on the conventional technology, there occur such troubles as generation of a recess in a BJ section to easily cause a crystal defect due to the mass transport phenomenon of InP when a butt joint (BJ) is grown, lowering of reliability of the devices, and lowering in a yield in fabrication of devices. In the present invention, a protection layer made of InGaAsP is provided on the BJ section. The layer has high etching selectivity for the InP cladding layer and remains on the BJ section even after mesa etching.
摘要翻译：在基于传统技术的具有脊波导结构的光学集成装置中，当对接部（BJ）为对接接头（BJ）时，发生BJ部分中的凹部的产生容易引起由于InP的质量传递现象引起的晶体缺陷的问题增长，降低了器件的可靠性，并降低了器件制造的成品率。在本发明中，在BJ部分上设置由InGaAsP制成的保护层。该层对于InP包层具有高蚀刻选择性，并且即使在台面蚀刻之后也保留在BJ部分上。

7. 发明授权

US07463663B2 Semiconductor laser diode and integrated semiconductor optical waveguide device 有权
标题翻译：半导体激光二极管和集成半导体光波导器件
公开(公告)号：US07463663B2
公开(公告)日：2008-12-09
申请号：US11703159
申请日：2007-02-07
申请人： Toshihiko Fukamachi , Shigeki Makino , Takafumi Taniguchi , Masahiro Aoki
发明人： Toshihiko Fukamachi , Shigeki Makino , Takafumi Taniguchi , Masahiro Aoki
IPC分类号： H01S5/00
CPC分类号： H01S5/0265 , B82Y20/00 , H01S5/1014 , H01S5/12 , H01S5/2004 , H01S5/22 , H01S5/2213 , H01S5/2214 , H01S5/2216 , H01S5/3211 , H01S5/3406 , H01S5/3434 , H01S2301/173
摘要： A conventional semiconductor laser diode is small in optical power at a constant operating current and limited in ridge width when integrated with an optical device, which forces the integration to be performed by lowering the original characteristic and makes it difficult to reduce cost and power consumption. In a semiconductor laser diode, widening of the ridge width is made possible by lowering the difference in refractive indexes between the ridge and other components, diffusion current and increase in the difference of refractive indexes are prevented by forming approximately vertical grooves along both sides of the ridge, and deterioration in characteristics due to regrowth is prevented by forming a diffraction grating on the ridge. The semiconductor laser diode is integrated with an optical device such as electroabsorption type optical modulator without increase of growth cycles and without restriction of the ridge width by using a tapered waveguide.
摘要翻译：常规的半导体激光二极管在恒定的工作电流下的光功率小，并且在与光学器件集成时限制了脊宽度，这迫使通过降低原始特性来执行集成，并且难以降低成本和功耗。在半导体激光二极管中，通过降低脊与其它成分之间的折射率差，可以扩大脊宽度，通过沿着两侧的大致垂直的槽形成扩散电流和折射率差的增加来防止并且通过在脊上形成衍射光栅来防止由于再生长导致的特性劣化。半导体激光二极管与诸如电吸收型光学调制器的光学装置集成，而不增加生长周期，并且通过使用锥形波导不限制脊宽度。

8. 发明授权

US07711229B2 Optical integrated device and manufacturing method thereof 有权
标题翻译：光集成器件及其制造方法
公开(公告)号：US07711229B2
公开(公告)日：2010-05-04
申请号：US11843682
申请日：2007-08-23
申请人： Takeshi Kitatani , Kazunori Shinoda , Takashi Shiota , Shigeki Makino , Toshihiko Fukamachi
发明人： Takeshi Kitatani , Kazunori Shinoda , Takashi Shiota , Shigeki Makino , Toshihiko Fukamachi
IPC分类号： G02B6/10 , G02B6/12
CPC分类号： G02B6/136 , G02B2006/12078 , G02B2006/12097 , G02B2006/12121 , G02B2006/12128 , G02B2006/12142
摘要： In the optical integrated devices with ridge waveguide structure based on the conventional technology, there occur such troubles as generation of a recess in a BJ section to easily cause a crystal defect due to the mass transport phenomenon of InP when a butt joint (BJ) is grown, lowering of reliability of the devices, and lowering in a yield in fabrication of devices. In the present invention, a protection layer made of InGaAsP is provided on the BJ section. The layer has high etching selectivity for the InP cladding layer and remains on the BJ section even after mesa etching.
摘要翻译：在基于传统技术的具有脊波导结构的光学集成装置中，当对接部（BJ）为对接接头（BJ）时，发生BJ部分中的凹部的产生容易引起由于InP的质量传递现象引起的晶体缺陷的问题增长，降低了器件的可靠性，并降低了器件制造的成品率。在本发明中，在BJ部分上设置由InGaAsP制成的保护层。该层对于InP包层具有高蚀刻选择性，并且即使在台面蚀刻之后也保留在BJ部分上。

9. 发明申请

US20070195847A1 Semiconductor laser diode and integrated semiconductor optical waveguide device 有权
标题翻译：半导体激光二极管和集成半导体光波导器件
公开(公告)号：US20070195847A1
公开(公告)日：2007-08-23
申请号：US11703159
申请日：2007-02-07
申请人： Toshihiko Fukamachi , Shigeki Makino , Takafumi Taniguchi , Masahiro Aoki
发明人： Toshihiko Fukamachi , Shigeki Makino , Takafumi Taniguchi , Masahiro Aoki
IPC分类号： H01S5/00 , H01S3/04
CPC分类号： H01S5/0265 , B82Y20/00 , H01S5/1014 , H01S5/12 , H01S5/2004 , H01S5/22 , H01S5/2213 , H01S5/2214 , H01S5/2216 , H01S5/3211 , H01S5/3406 , H01S5/3434 , H01S2301/173
摘要： A conventional semiconductor laser diode is small in optical power at a constant operating current and limited in ridge width when integrated with an optical device, which forces the integration to be performed by lowering the original characteristic and makes it difficult to reduce cost and power consumption. In a semiconductor laser diode, widening of the ridge width is made possible by lowering the difference in refractive indexes between the ridge and other components, diffusion current and increase in the difference of refractive indexes are prevented by forming approximately vertical grooves along both sides of the ridge, and deterioration in characteristics due to regrowth is prevented by forming a diffraction grating on the ridge. The semiconductor laser diode is integrated with an optical device such as electroabsorption type optical modulator without increase of growth cycles and without restriction of the ridge width by using a tapered waveguide.
摘要翻译：常规的半导体激光二极管在恒定的工作电流下的光功率小，并且在与光学器件集成时限制了脊宽度，这迫使通过降低原始特性来执行集成，并且难以降低成本和功耗。在半导体激光二极管中，通过降低脊与其它成分之间的折射率差，可以扩大脊宽度，通过沿着两侧的大致垂直的槽形成扩散电流和折射率差的增加来防止并且通过在脊上形成衍射光栅来防止由于再生长导致的特性劣化。半导体激光二极管与诸如电吸收型光学调制器的光学装置集成，而不增加生长周期，并且通过使用锥形波导不限制脊宽度。

10. 发明授权

US08610105B2 Semiconductor electroluminescent device with a multiple-quantum well layer formed therein 有权
标题翻译：其中形成有多量子阱层的半导体场致发光器件
公开(公告)号：US08610105B2
公开(公告)日：2013-12-17
申请号：US12614859
申请日：2009-11-09
申请人： Toshihiko Fukamachi , Takashi Shiota , Takeshi Kitatani , Nozomu Yasuhara , Atsushi Nakamura , Mitsuhiro Sawada
发明人： Toshihiko Fukamachi , Takashi Shiota , Takeshi Kitatani , Nozomu Yasuhara , Atsushi Nakamura , Mitsuhiro Sawada
IPC分类号： H01L33/00
CPC分类号： H01S5/3434 , B82Y20/00 , H01L33/06 , H01L33/30 , H01S5/3403 , H01S5/3407
摘要： Provided is a semiconductor electroluminescent device with an InGaAlAs-based well layer having tensile strain, or a semiconductor electroluminescent device with an InGaAsP-based well layer having tensile strain and with an InGaAlAs-based barrier layer which is high-performance and highly reliable in a wide temperature range. In a multiple-quantum well layer of the semiconductor electroluminescent device, a magnitude of interface strain at an interface between the well layer and the barrier layer is smaller than a magnitude of critical interface strain determined by a layer thickness value which is larger one of a thickness of the well layer and a thickness of the barrier layer.
摘要翻译：提供了具有拉伸应变的具有InGaAlAs的阱层的半导体场致发光器件，或具有拉伸应变的InGaAsP基阱层和具有InGaAlAs基阻挡层的半导体场致发光器件，其在高温下具有高可靠性宽温度范围在半导体电致发光器件的多量子阱层中，阱层和势垒层之间的界面处的界面应变的大小小于由层厚度值确定的临界界面应变的大小，该层厚度值是阱层的厚度和阻挡层的厚度。

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