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1. 发明授权

US06437689B2 Agent apparatus 失效
标题翻译：代理设备
公开(公告)号：US06437689B2
公开(公告)日：2002-08-20
申请号：US09814169
申请日：2001-03-22
申请人： Makoto Kawai , Kazuya Tamura
发明人： Makoto Kawai , Kazuya Tamura
IPC分类号： B60Q100
CPC分类号： B60R25/25 , B60R25/2081 , B60R25/252 , B60R25/257
摘要： An agent apparatus increases security, and can make responses suited to individuals, thereby increasing convenience. The agent apparatus comprises an individual recognition unit which recognizes individuals who use a vehicle; a memory unit which stores agent data corresponding to each individual recognized by the individual recognition unit; a selection unit which selects agent data corresponding to a specific individuals recognized by the individual recognition unit from the agent data stored in the memory unit; and a response unit which responds to the individual based on the agent data selected by the selection unit.
摘要翻译：代理机构增加安全性，并且可以使响应适合于个人，从而增加方便性。代理装置包括识别使用车辆的个人的个人识别单元; 存储单元，其存储与由各个识别单元识别的每个个体对应的代理数据; 选择单元，从存储在存储单元中的代理数据中选择与由个人识别单元识别的特定个人对应的代理数据; 以及响应单元，其基于由所述选择单元选择的代理数据对所述个人进行响应。

2. 发明授权

US06819236B2 Vehicle monitoring system 有权
标题翻译：车辆监控系统
公开(公告)号：US06819236B2
公开(公告)日：2004-11-16
申请号：US09804184
申请日：2001-03-13
申请人： Makoto Kawai , Kazuya Tamura
发明人： Makoto Kawai , Kazuya Tamura
IPC分类号： G08B108
CPC分类号： G08G1/205 , G07C5/008
摘要： The vehicle monitoring system comprises: an on-vehicle unit provided in a vehicle, the on-vehicle unit comprising: a vehicle condition monitor for monitoring a condition of the vehicle and outputting vehicle condition data; and an on-vehicle communicator for sending the vehicle condition data output from the vehicle condition monitor; a data server for communicating with the on-vehicle unit, the data server comprising a server communicator for receiving the vehicle condition data sent from the on-vehicle communicator; a storage section for storing the vehicle condition data; and an abnormality determining section for determining whether an abnormality has occurred in the vehicle, based on the vehicle condition data stored in the storage section, and for outputting an abnormality informing signal when the abnormality has occurred in the vehicle.
摘要翻译：所述车辆监视系统包括：设置在车辆中的车载单元，所述车载单元包括：车辆状态监视器，用于监视所述车辆的状态并输出车辆状况数据; 以及车载通信器，用于发送从车辆状态监视器输出的车辆状态数据; 用于与车载单元通信的数据服务器，所述数据服务器包括用于接收从车载通信器发送的车辆状态数据的服务器通信器; 用于存储车辆状态数据的存储部分; 以及异常判定部，其基于存储在存储部中的车辆状况数据，判断车辆是否发生异常，并且在车辆发生异常时输出异常通知信号。

3. 发明授权

US08835461B2 Substituted 3-hydroxy-4-pyridone derivative 有权
标题翻译：取代的3-羟基-4-吡啶酮衍生物
公开(公告)号：US08835461B2
公开(公告)日：2014-09-16
申请号：US13259956
申请日：2010-03-23
申请人： Toshio Fujishita , Minako Mikamiyama , Makoto Kawai , Toshiyuki Akiyama
发明人： Toshio Fujishita , Minako Mikamiyama , Makoto Kawai , Toshiyuki Akiyama
IPC分类号： A61K31/497 , A61K31/44 , A61K31/445 , C07D413/02 , C07D401/02 , C07D239/02 , C07D403/02 , C07D471/02 , C07D417/02 , C07D413/00 , C07D215/00 , C07D409/12
CPC分类号： C07D413/06 , A61K9/0019 , A61K9/1652 , A61K9/2054 , C07D213/80 , C07D401/04 , C07D401/06 , C07D401/08 , C07D401/10 , C07D401/12 , C07D405/06 , C07D405/08 , C07D405/10 , C07D409/06 , C07D409/08 , C07D409/10 , C07D409/14 , C07D413/08 , C07D413/14 , C07D417/06 , C07D417/08 , C07D417/14 , C07D471/04
摘要： This invention provides compounds having antiviral activities especially inhibiting activity for influenza virus, more preferably provides substituted 3-hydroxy-4-pyridone derivatives having cap-dependent endonuclease inhibitory activity.
摘要翻译：本发明提供具有抗病毒活性的化合物，特别是抑制流感病毒的活性，更优选提供具有cap依赖性内切核酸酶抑制活性的取代的3-羟基-4-吡啶酮衍生物。

4. 发明授权

US08268700B2 Method for manufacturing SOI wafer 有权
标题翻译：制造SOI晶圆的方法
公开(公告)号：US08268700B2
公开(公告)日：2012-09-18
申请号：US12153160
申请日：2008-05-14
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： There is disclosed a method for manufacturing an SOI wafer comprising at least: implanting a hydrogen ion, a rare gas ion, or both the ions into a donor wafer formed of a silicon wafer or a silicon wafer having an oxide film formed on a surface thereof from a surface of the donor wafer, thereby forming an ion implanted layer; performing a plasma activation treatment with respect to at least one of an ion implanted surface of the donor wafer and a surface of a handle wafer, the surface of the handle wafer is to be bonded to the ion implanted surface; closely bonding these surfaces to each other; mechanically delaminating the donor wafer at the ion implanted layer as a boundary and thereby reducing a film thickness thereof to provide an SOI layer, and performing a heat treatment at 600 to 1000° C.; and polishing a surface of the SOI layer for 10 to 50 nm based on chemical mechanical polishing.A method for manufacturing with excellent productivity an SOI wafer having an SOI layer with a mirror-finished surface and high film thickness uniformity can be provided.
摘要翻译：公开了一种制造SOI晶片的方法，该方法至少包括：将氢离子，稀有气体离子或两者离子注入到由硅晶片或具有在其表面上形成的氧化膜的硅晶片形成的施主晶片中从施主晶片的表面，从而形成离子注入层; 对施主晶片的离子注入表面和处理晶片的表面中的至少一个进行等离子体激活处理，把手晶片的表面与离子注入表面结合; 将这些表面彼此紧密结合; 以离子注入层的施主晶片作为边界进行机械分层，由此降低其膜厚以提供SOI层，并在600〜1000℃下进行热处理。并且基于化学机械抛光将SOI层的表面抛光10至50nm。可以提供具有优异的生产率的具有SOI层的具有镜面精加工表面和高膜厚均匀性的SOI晶片的方法。

5. 发明申请

US20120184734A1 SUBSTITUTED POLYCYCLIC CARBAMOYLPYRIDONE DERIVATIVE 有权
标题翻译：取代的多环碳酰胺衍生物
公开(公告)号：US20120184734A1
公开(公告)日：2012-07-19
申请号：US13378334
申请日：2010-06-14
申请人： Toshiyuki Akiyama , Kenji Takaya , Makoto Kawai , Yoshiyuki Taoda , Minako Mikamiyama , Kenji Morimoto , Chika Kageyama , Kenji Tomita , Hidenori Mikamiyama , Naoyuki Suzuki
发明人： Toshiyuki Akiyama , Kenji Takaya , Makoto Kawai , Yoshiyuki Taoda , Minako Mikamiyama , Kenji Morimoto , Chika Kageyama , Kenji Tomita , Hidenori Mikamiyama , Naoyuki Suzuki
IPC分类号： C07D498/14 , C07D471/14 , C07D471/04
CPC分类号： C07D471/04 , A61K31/53 , C07D471/14 , C07D487/14 , C07D487/20 , C07D498/14
摘要： This invention provides compounds having antiviral activities especially inhibiting activity for influenza virus, more preferably provides substituted 3-hydroxy-4-pyridone derivatives having cap-dependent endonuclease inhibitory activity.
摘要翻译：本发明提供具有抗病毒活性的化合物，特别是抑制流感病毒的活性，更优选提供具有cap依赖性内切核酸酶抑制活性的取代的3-羟基-4-吡啶酮衍生物。

6. 发明授权

US08057647B2 Electrode mounting structure of surface treatment apparatus 有权
标题翻译：表面处理装置的电极安装结构
公开(公告)号：US08057647B2
公开(公告)日：2011-11-15
申请号：US12490034
申请日：2009-06-23
申请人： Tomohiro Asou , Seiya Kunioka , Hitoshi Muramatsu , Nobuyuki Suzuki , Akira Ishibashi , Makoto Kawai
发明人： Tomohiro Asou , Seiya Kunioka , Hitoshi Muramatsu , Nobuyuki Suzuki , Akira Ishibashi , Makoto Kawai
IPC分类号： C25B9/02 , C25C7/02 , C25D17/06
CPC分类号： C25D5/34 , C25D7/04 , C25D17/12 , C25F3/02 , C25F7/00
摘要： An electrode mounting structure of a surface treatment apparatus in which a metal electrode is disposed so as to oppose to an inner-peripheral surface of a cylinder, the electrode and the cylinder are energized in a state where treatment liquid is interposed between the electrode and the cylinder inner-peripheral surface so as to perform pre-plating or plating to the cylinder inner-peripheral surface, and the metal electrode is detachably attached to a metal electrode holder member. The structure includes a resin coupler having a threaded portion engaged with a threaded portion formed on the electrode holder member.
摘要翻译：一种表面处理装置的电极安装结构，其中金属电极设置成与气缸的内周面相对设置，电极和气缸在处理液介于电极和电极之间的状态下通电气缸内周面，以便对气缸内周面进行预镀或电镀，并且金属电极可拆卸地安装在金属电极保持构件上。该结构包括树脂耦合器，其具有与形成在电极保持器构件上的螺纹部分接合的螺纹部分。

7. 发明授权

US08030118B2 Method for producing single crystal silicon solar cell and single crystal silicon solar cell 有权
公开(公告)号：US08030118B2
公开(公告)日：2011-10-04
申请号：US11976021
申请日：2007-10-19
申请人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
发明人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
IPC分类号： H01L21/00
CPC分类号： H01L31/068 , H01L31/022466 , H01L31/1884 , H01L31/1896 , Y02B10/10 , Y02E10/547
摘要： A method for producing a single crystal silicon solar cell including the steps of: implanting ions into a single crystal silicon substrate through an ion implanting surface thereof; closely contacting the single crystal silicon substrate and a transparent insulator substrate with each other via a transparent electroconductive adhesive while using the ion implanting surface as a bonding surface; curing and maturing the transparent electroconductive adhesive into a transparent electroconductive film; applying an impact to the ion implanted layer to mechanically delaminate the single crystal silicon substrate to leave a single crystal silicon layer; and forming a p-n junction in the single crystal silicon layer.

8. 发明申请

US20110104871A1 METHOD FOR MANUFACTURING BONDED SUBSTRATE 有权
标题翻译：制造粘结基板的方法
公开(公告)号：US20110104871A1
公开(公告)日：2011-05-05
申请号：US12934788
申请日：2009-04-10
申请人： Yuji Tobisaka , Yoshihiro Kubota , Atsuo Ito , Kouichi Tanaka , Makoto Kawai , Shoji Akiyama , Hiroshi Tamura
发明人： Yuji Tobisaka , Yoshihiro Kubota , Atsuo Ito , Kouichi Tanaka , Makoto Kawai , Shoji Akiyama , Hiroshi Tamura
IPC分类号： H01L21/762
CPC分类号： H01L21/187 , H01L21/76254
摘要： Provided is a method for manufacturing a bonded wafer with a good thin film over the entire substrate surface, especially in the vicinity of the lamination terminal point. The method for manufacturing a bonded wafer comprises at least the following steps of: forming an ion-implanted region by implanting a hydrogen ion or a rare gas ion, or the both types of ions from a surface of a first substrate which is a semiconductor substrate; subjecting at least one of an ion-implanted surface of the first substrate and a surface of a second substrate to be attached to a surface activation treatment; laminating the ion-implanted surface of the first substrate and the surface of the second substrate in an atmosphere with a humidity of 30% or less and/or a moisture content of 6 g/m3 or less; and a splitting the first substrate at the ion-implanted region so as to reduce thickness of the first substrate, thereby manufacturing a bonded wafer with a thin film on the second substrate.
摘要翻译：提供一种在整个基板表面上，特别是在层叠终点附近制造具有良好薄膜的接合晶片的方法。制造接合晶片的方法至少包括以下步骤：通过从作为半导体衬底的第一衬底的表面注入氢离子或稀有气体离子或两种离子形成离子注入区域 ; 对第一基板的离子注入表面和第二基板的表面中的至少一个进行表面活化处理; 将第一基板的离子注入表面和第二基板的表面在湿度为30％以下和/或6g / m 3以下的气氛中层压; 以及在离子注入区域处分裂第一衬底以便减小第一衬底的厚度，由此在第二衬底上制造具有薄膜的接合晶片。

9. 发明授权

US07879175B2 Method for manufacturing pyrolytic boron nitride composite substrate 有权
标题翻译：制造热解氮化硼复合基板的方法
公开(公告)号：US07879175B2
公开(公告)日：2011-02-01
申请号：US12078276
申请日：2008-03-28
申请人： Makoto Kawai , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Yuuji Tobisaka , Shoji Akiyama
发明人： Makoto Kawai , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Yuuji Tobisaka , Shoji Akiyama
IPC分类号： B32B38/10
CPC分类号： H01L21/76254 , C23C14/48
摘要： Wettability of a PBN material surface with respect to a metal is improved to expand use applications. Hydrogen ions are implanted into a surface of a silicon substrate 10 to form an ion implanted region 11 at a predetermined depth near a surface of the silicon substrate 10, and a plasma treatment or an ozone treatment is performed with respect to a main surface of the silicon substrate 10 for the purpose of surface cleaning or surface activation. The main surfaces of the silicon substrate 10 and a PBN substrate 20 subjected to the surface treatment are appressed against each other to be bonded at a room temperature, and an external impact shock is given to the bonded substrate to mechanically delaminate a silicon film 12 from a bulk 13 of the silicon substrate to be transferred. An obtained PBN composite substrate 30 is diced to form a chip having a desired size, and a refractory metal is metallized on the silicon film 12 side to be connected with a wiring material.
摘要翻译： PBN材料表面相对于金属的润湿性得到改善以扩大使用应用。将氢离子注入到硅衬底10的表面中以在硅衬底10的表面附近的预定深度处形成离子注入区11，并且相对于硅衬底10的主表面进行等离子体处理或臭氧处理硅基板10，用于表面清洁或表面活化。经过表面处理的硅衬底10和PBN衬底20的主表面在室温下相互粘合，并且对键合衬底施加外部冲击冲击，从而将硅膜12从待转移的硅衬底的体积13。将获得的PBN复合基板30切割成具有所需尺寸的芯片，并且将难熔金属在硅膜12侧金属化以与布线材料连接。

10. 发明申请

US20100311221A1 Method for manufacturing semiconductor substrate 有权
标题翻译：半导体衬底的制造方法
公开(公告)号：US20100311221A1
公开(公告)日：2010-12-09
申请号：US12805582
申请日：2010-08-06
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L27/1266 , H01L29/78603
摘要： Hydrogen ions are implanted to a surface (main surface) of the single crystal Si substrate 10 at a dosage of 1.5×1017 atoms/cm2 or higher to form the hydrogen ion implanted layer (ion-implanted damage layer) 11. As a result of the hydrogen ion implantation, the hydrogen ion implanted boundary 12 is formed. The single crystal Si substrate 10 and the low melting glass substrate 20 are bonded together. The bonded substrate is heated at relatively low temperature, 120° C. or higher and 250° C. or lower (below a melting point of the support substrate). Further, an external shock is applied to delaminate the Si crystal film along the hydrogen ion implanted boundary 12 of the single crystal Si substrate 10 out of the heat-treated bonded substrate. Then, the surface of the resultant silicon thin film 13 is polished to remove a damaged portion, so that a semiconductor substrate can be fabricated. There can be provided a semiconductor substrate in which a high-quality silicon thin film is transferred onto a substrate made of a low melting point material.
摘要翻译：将氢离子以1.5×10 17原子/ cm 2或更高的剂量注入单晶Si衬底10的表面（主表面），以形成氢离子注入层（离子注入损伤层）11。氢离子注入，形成氢离子注入边界12。单晶Si衬底10和低熔点玻璃衬底20结合在一起。键合衬底在相对较低的温度，120℃或更高和250℃或更低（低于支撑衬底的熔点）下加热。此外，施加外部冲击以沿着经热处理的键合衬底的单晶Si衬底10的氢离子注入边界12将Si晶体膜分层。然后，对所得的硅薄膜13的表面进行抛光以去除损坏部分，从而可以制造半导体衬底。可以提供一种半导体衬底，其中将高质量的硅薄膜转移到由低熔点材料制成的衬底上。

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