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    • 3. 发明授权
    • Positive ceramic semiconductor device
    • 正陶瓷半导体器件
    • US4831432A
    • 1989-05-16
    • US19972
    • 1987-02-27
    • Makoto HoriItsuhei OgataHitoshi NiwaNaoto Miwa
    • Makoto HoriItsuhei OgataHitoshi NiwaNaoto Miwa
    • H01C1/14
    • H01C1/1406
    • A positive ceramic semiconductor device having positive temperature coefficient of resistance comprises a pair of electrodes provided on a ceramic semiconductor substrate. One of the paired electrodes which is to serve as the positive pole is basically constituted by at least an electrically conductive layer of silver-palladium series containing silver and palladium at a predetermined ratio. For preventing a localized current concentration from occurring in the current conducting state, improvement is made as the structure of the positive pole electrode ormed of the electrically conductive material of silver-palladium series and/or the structure of the negative pole electrode. Silver-migration phenomenon on the positive ceramic semiconductor substrate as well as degradation of the mechanical strength thereof is positively prevented.
    • 具有正温度系数电阻的正陶瓷半导体器件包括设置在陶瓷半导体衬底上的一对电极。 用作正极的成对电极中的一个基本上由至少包含以规定比例含有银和钯的银 - 钯系列的导电层构成。 为了防止在电流导通状态下发生局部电流集中,作为负极电极的结构或者银 - 钯系的导电材料的结构和/或负极电极的结构的改进。 积极地防止正极陶瓷半导体衬底上的银迁移现象以及其机械强度的劣化。