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    • 2. 发明授权
    • Method for reading fuse information in a semiconductor memory
    • 读取半导体存储器中的熔丝信息的方法
    • US07177210B2
    • 2007-02-13
    • US11363933
    • 2006-03-01
    • Makoto HamadaKazuyoshi MuraokaMasahiro Yoshihara
    • Makoto HamadaKazuyoshi MuraokaMasahiro Yoshihara
    • G11C11/00
    • G11C29/027G11C29/02
    • A semiconductor memory encompasses a memory cell array having a spare memory cell array; a holding circuit having banks of fuses, configured to read and hold fuse information; a decision circuit configured to determine which address of memory cell is to be replaced with which spare memory cell based on the fuse information from the holding circuit; and a holding-controller configured to control reading and holding of the fuse information in the holding circuit by receiving a power supply completion signal and a refresh signal. The holding circuit rereads the fuse information when the reread signal is generated, after the holding circuit reads once the fuse information by receiving the power supplying completion signal.
    • 半导体存储器包括具有备用存储单元阵列的存储单元阵列; 具有保险丝组的保持电路,被配置为读取和保持熔丝信息; 判定电路,被配置为基于来自保持电路的熔丝信息来确定存储器单元的哪个地址将被替换为哪个备用存储器单元; 以及保持控制器,被配置为通过接收电源完成信号和刷新信号来控制保持电路中的熔丝信息的读取和保持。 当保持电路通过接收供电完成信号一次读取熔丝信息之后,保持电路在产生再读信号时重新读取熔丝信息。
    • 3. 发明授权
    • Semiconductor memory having a spare memory cell
    • 具有备用存储单元的半导体存储器
    • US07038969B2
    • 2006-05-02
    • US10940635
    • 2004-09-15
    • Makoto HamadaKazuyoshi MuraokaMasahiro Yoshihara
    • Makoto HamadaKazuyoshi MuraokaMasahiro Yoshihara
    • G11C7/00
    • G11C29/027G11C29/02
    • A semiconductor memory encompasses a memory cell array having a spare memory cell array; a holding circuit having banks of fuses, configured to read and hold fuse information; a decision circuit configured to determine which address of memory cell is to be replaced with which spare memory cell based on the fuse information from the holding circuit; and a holding-controller configured to control reading and holding of the fuse information in the holding circuit by receiving a power supply completion signal and a refresh signal. The holding circuit rereads the fuse information when the reread signal is generated, after the holding circuit reads once the fuse information by receiving the power supplying completion signal.
    • 半导体存储器包括具有备用存储单元阵列的存储单元阵列; 具有保险丝组的保持电路,被配置为读取和保持熔丝信息; 判定电路,被配置为基于来自保持电路的熔丝信息来确定存储器单元的哪个地址将被替换为哪个备用存储器单元; 以及保持控制器,被配置为通过接收电源完成信号和刷新信号来控制保持电路中的熔丝信息的读取和保持。 当保持电路通过接收供电完成信号一次读取熔丝信息之后,保持电路在产生再读信号时重新读取熔丝信息。