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    • 5. 发明授权
    • Structure for and method of using a four terminal hybrid silicon/organic field effect sensor device
    • 使用四端杂交硅/有机场效应传感器器件的结构和方法
    • US07397072B2
    • 2008-07-08
    • US11291729
    • 2005-12-01
    • Ananth DodabalapurDeepak SharmaDaniel Fine
    • Ananth DodabalapurDeepak SharmaDaniel Fine
    • H01L27/28
    • H01L27/286B82Y10/00B82Y15/00B82Y30/00G01N27/4141H01L2924/0002H01L2924/00
    • A four terminal field effect device comprises a silicon field effect device with a silicon N-type semiconductor channel and an N+ source and drain region. An insulator is deposited over the N-type semiconductor channel. An organic semiconductor material is deposited over the insulator gate forming a organic semiconductor channel and is exposed to the ambient environment. Drain and source electrodes are deposited and electrically couple to respective ends of the organic semiconductor channel. The two independent source electrodes and the two independent drain electrodes form the four terminals of the new field effect device. The organic semiconductor channel may be charged and discharged electrically and have its charge modified in response to chemicals in the ambient environment. The conductivity of silicon semiconductor channel is modulated by induced charges in the common gate in response to charges in the organic semiconductor channel.
    • 四端场效应器件包括具有硅N型半导体沟道和N +源极和漏极区的硅场效应器件。 在N型半导体通道上沉积绝缘体。 有机半导体材料沉积在形成有机半导体通道的绝缘体栅极上并暴露于周围环境中。 漏极和源电极被沉积并电耦合到有机半导体沟道的相应末端。 两个独立的源电极和两个独立的漏极形成新的场效应器件的四个端子。 有机半导体通道可以电充电和放电,并且响应于周围环境中的化学品而对其电荷进行改性。 响应于有机半导体通道中的电荷,硅半导体沟道的导电性由公共栅中的感应电荷调制。
    • 6. 发明授权
    • Display comprising organic smart pixels
    • 显示器包括有机智能像素
    • US06384804B1
    • 2002-05-07
    • US09199364
    • 1998-11-25
    • Ananth DodabalapurRahul Sarpeshkar
    • Ananth DodabalapurRahul Sarpeshkar
    • G09G332
    • G09G3/3233G09G3/3291G09G2300/0852G09G2310/0251G09G2320/0219G09G2320/029G09G2320/043
    • A display apparatus according to our invention comprises a multiplicity of nominally identical smart pixels, a given pixel comprising an organic light emitting diode and an organic or inorganic (e.g., amorphous or polycrystalline Si) pixel FET. The display also comprises drive/compensation circuitry adapted for mitigating or eliminating non-idealities associated with the organic components. Among the non-idealities are variations in mobility and/or threshold voltage of the pixel FET from transistor to transistor, change in mobility and/or threshold voltage with time in a given pixel FET, change over time of the LED characteristics, capacitive signal feed-through through the gate insulator of the pixel FETs by short rise/fall time pulses, poor on-off ratio of the pixel FET, and charge leakage through the gate dielectric. Exemplary drive/compensation circuitry is disclosed.
    • 根据我们的发明的显示装置包括多个名义上相同的智能像素,给定像素包括有机发光二极管和有机或无机(例如,非晶或多晶Si)像素FET。 显示器还包括适于减轻或消除与有机部件相关联的非理想性的驱动/补偿电路。 在非理想性中,像素FET从晶体管到晶体管的迁移率和/或阈值电压的变化,给定像素FET中的迁移率和/或阈值电压随时间的变化,LED特性随时间的变化,电容信号馈送 通过像素FET的栅极绝缘体通过短的上升/下降时间脉冲,像素FET的差的开/关比以及通过栅极电介质的电荷泄漏。 公开了示例性的驱动/补偿电路。
    • 8. 发明授权
    • Article comprising microcavity light sources
    • 文章包括微腔光源
    • US5405710A
    • 1995-04-11
    • US156217
    • 1993-11-22
    • Ananth DodabalapurTimothy M. MillerLewis J. Rothberg
    • Ananth DodabalapurTimothy M. MillerLewis J. Rothberg
    • G09F9/33H01L27/32H01L33/00H01L51/50H01L51/52H05B33/12H05B33/14H05B33/24
    • H01L51/5265H01L27/3206H01L51/5036H05B33/12Y10S428/917
    • Apparatus according to the invention comprises at least two optical microcavity light emitters. Each one of the at least two light emitters comprises spaced apart reflectors that define a microcavity, and further comprises organic material that is capable of electro-luminescence (e.g., tris (8-hydroxyquinolinol) aluminum, commonly referred to as "Alq"), and means for applying an electric field across the organic material. One of the at least two microcavities has effective optical length L.sub.1, and the other microcavity has effective optical length L.sub.2 .noteq.L.sub.1, with the optical lengths selected such that one of the microcavities emits radiation of a first color (e.g., red), and the other microcavity emits radiation of a second color (e.g., green). In many cases there will be present also a third microcavity that emits radiation of a third color (e.g., blue). In preferred embodiments there is present within the microcavities a filler layer, of thickness selected to provide to a given microcavity the desired optical length. A preferred embodiment of the invention is a full color flat panel display that comprises many pixels, each pixel comprising at least three different microcavity emitters. Other contemplated embodiments are a LED printer, an optical interconnect and an optical fiber communication system.
    • 根据本发明的装置包括至少两个光学微腔光发射器。 所述至少两个光发射器中的每一个包括限定微腔的间隔开的反射器,并且还包括能够发光的有机材料(例如,通常称为“Alq”)的三(8-羟基喹啉)铝, 以及用于在有机材料上施加电场的装置。 所述至少两个微腔中的一个具有有效的光学长度L1,另一个微腔具有有效的光学长度L2 NOTEQUAL L1,其中选择光学长度使得其中一个微腔发射第一颜色(例如,红色)的辐射,并且 其他微腔发射第二种颜色(如绿色)的辐射。 在许多情况下,还将存在发射第三颜色(例如蓝色)的辐射的第三微腔。 在优选实施例中,在微腔内部存在厚度选择为向给定微腔提供所需光学长度的填充层。 本发明的优选实施例是包括许多像素的全色平板显示器,每个像素包括至少三个不同的微腔发射器。 其他考虑的实施例是LED打印机,光学互连和光纤通信系统。
    • 9. 发明授权
    • Method of using a four terminal hybrid silicon/organic field effect sensor device
    • 使用四端杂交硅/有机场效应传感器装置的方法
    • US07538538B2
    • 2009-05-26
    • US12133795
    • 2008-06-05
    • Ananth DodabalapurDeepak SharmaDaniel Fine
    • Ananth DodabalapurDeepak SharmaDaniel Fine
    • H01L23/58
    • H01L27/286B82Y10/00B82Y15/00B82Y30/00G01N27/4141H01L2924/0002H01L2924/00
    • A four terminal field effect device comprises a silicon field effect device with a silicon N-type semiconductor channel and an N+ source and drain region. An insulator is deposited over the N-type semiconductor channel. An organic semiconductor material is deposited over the insulator gate forming a organic semiconductor channel and is exposed to the ambient environment. Drain and source electrodes are deposited and electrically couple to respective ends of the organic semiconductor channel. The two independent source electrodes and the two independent drain electrodes form the four terminals of the new field effect device. The organic semiconductor channel may be charged and discharged electrically and have its charge modified in response to chemicals in the ambient environment. The conductivity of silicon semiconductor channel is modulated by induced charges in the common gate in response to charges in the organic semiconductor channel.
    • 四端场效应器件包括具有硅N型半导体沟道和N +源极和漏极区的硅场效应器件。 在N型半导体通道上沉积绝缘体。 有机半导体材料沉积在形成有机半导体通道的绝缘体栅极上并暴露于周围环境中。 漏极和源电极被沉积并电耦合到有机半导体沟道的相应末端。 两个独立的源电极和两个独立的漏极形成新的场效应器件的四个端子。 有机半导体通道可以电充电和放电,并且响应于周围环境中的化学品而对其电荷进行改性。 响应于有机半导体通道中的电荷,硅半导体沟道的导电性由公共栅中的感应电荷调制。
    • 10. 发明申请
    • METHOD OF USING A FOUR TERMINAL HYBRID SILICON/ORGANIC FIELD EFFECT SENSOR DEVICE
    • 使用四端子混合硅/有机场效应传感器器件的方法
    • US20080278140A1
    • 2008-11-13
    • US12133795
    • 2008-06-05
    • Ananth DodabalapurDeepak SharmaDaniel Fine
    • Ananth DodabalapurDeepak SharmaDaniel Fine
    • G01N27/00
    • H01L27/286B82Y10/00B82Y15/00B82Y30/00G01N27/4141H01L2924/0002H01L2924/00
    • A four terminal field effect device comprises a silicon field effect device with a silicon N-type semiconductor channel and an N+ source and drain region. An insulator is deposited over the N-type semiconductor channel. An organic semiconductor material is deposited over the insulator gate forming a organic semiconductor channel and is exposed to the ambient environment. Drain and source electrodes are deposited and electrically couple to respective ends of the organic semiconductor channel. The two independent source electrodes and the two independent drain electrodes form the four terminals of the new field effect device. The organic semiconductor channel may be charged and discharged electrically and have its charge modified in response to chemicals in the ambient environment. The conductivity of silicon semiconductor channel is modulated by induced charges in the common gate in response to charges in the organic semiconductor channel.
    • 四端场效应器件包括具有硅N型半导体沟道和N +源极和漏极区的硅场效应器件。 在N型半导体通道上沉积绝缘体。 有机半导体材料沉积在形成有机半导体通道的绝缘体栅极上并暴露于周围环境中。 漏极和源电极被沉积并电耦合到有机半导体沟道的相应末端。 两个独立的源电极和两个独立的漏极形成新的场效应器件的四个端子。 有机半导体通道可以电充电和放电,并且响应于周围环境中的化学品而对其电荷进行改性。 响应于有机半导体通道中的电荷,硅半导体沟道的导电性由公共栅中的感应电荷调制。