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1. 发明专利

IN190137B A method of manufacturing a semiconducting ceramichaving a positive resistance temperature characte ristic 未知
公开(公告)号：IN190137B
公开(公告)日：2003-06-21
申请号：IN16CA1997
申请日：1997-01-03
申请人： MURATA MANUFACTURING CO
发明人： ABE YOSHIAKI , KAWAHARA TAKAHIKO , NABIKA YASUHIRO , KITO NORIMITSU , URAHARA RYOICHI
IPC分类号： C04B33/36 , C04B35/46

2. 发明专利

DE69731592D1 未知
公开(公告)号：DE69731592D1
公开(公告)日：2004-12-23
申请号：DE69731592
申请日：1997-10-07
申请人： MURATA MANUFACTURING CO
发明人： KAWASE MASAHIKO , KIMOTO HIDENOBU , KITO NORIMITSU , TANIGUCHI IKUYA
IPC分类号： H01C1/14 , H01C1/142 , H01C7/00 , H01C7/04 , H01C17/00 , H01C17/28
摘要： A thermistor chip is made by first forming first metal layers (6;26) with a three-layer structure at both end parts of a thermistor element (2) and then forming second metal layers (7;27) with a three-layer structure on the first metal layers (6;26) so as to have edge parts that are formed directly in contact with a surface area of the thermistor element (2) and will reduce its normal temperature resistance value. The first (6;26) and second (7,27) metal layers are each of a three-layer structure with a lower layer (6a,7a;26a,27a) made of a metal with resistance against soldering heat, a middle (6b,7b;26b,27b) layer against soldering heat, and an upper layer (6c,7c;26c,27c) made of a metal having wettability to solder.

3. 发明专利

AT282890T 未知
公开(公告)号：AT282890T
公开(公告)日：2004-12-15
申请号：AT97117336
申请日：1997-10-07
申请人： MURATA MANUFACTURING CO
发明人： KAWASE MASAHIKO , KIMOTO HIDENOBU , KITO NORIMITSU , TANIGUCHI IKUYA
IPC分类号： H01C1/14 , H01C1/142 , H01C7/00 , H01C7/04 , H01C17/00 , H01C17/28
摘要： A thermistor chip is made by first forming first metal layers (6;26) with a three-layer structure at both end parts of a thermistor element (2) and then forming second metal layers (7;27) with a three-layer structure on the first metal layers (6;26) so as to have edge parts that are formed directly in contact with a surface area of the thermistor element (2) and will reduce its normal temperature resistance value. The first (6;26) and second (7,27) metal layers are each of a three-layer structure with a lower layer (6a,7a;26a,27a) made of a metal with resistance against soldering heat, a middle (6b,7b;26b,27b) layer against soldering heat, and an upper layer (6c,7c;26c,27c) made of a metal having wettability to solder.

4. 发明专利

AT273556T 未知
公开(公告)号：AT273556T
公开(公告)日：2004-08-15
申请号：AT97116656
申请日：1997-09-24
申请人： MURATA MANUFACTURING CO
发明人： KAWASE MASAHIKO , KIMOTO HIDENOBU , KITO NORIMITSU , TANIGUCHI IKUYA
IPC分类号： H01C1/14 , H01C1/148 , H01C7/00 , H01C7/04 , H01C17/00 , H01C17/28
摘要： Electrodes on both ends of a thermistor chip element (2) each have a first metal layer (6) formed on the thermistor chip element (2) and a second metal layer (8) which has a smaller area than the first metal layer (6) and is formed on the first metal layer (6) such that the mutually opposite edge parts of the first metal layers (6) are exposed. Third metal layers (9) are formed over the second metal layers (8). A fourth metal layer (7) may be formed between the first and second metal layers (6, 8).

5. 发明专利

DE10005800B4 Verfahren zum Herstellen von Thermistorchips 未知
公开(公告)号：DE10005800B4
公开(公告)日：2013-10-10
申请号：DE10005800
申请日：2000-02-10
申请人： MURATA MANUFACTURING CO
发明人： FUJIMOTO MITSUAKI , FURUKAWA NOBORU , KAWASE MASAHIKO , KITO NORIMITSU
IPC分类号： H01C7/02 , H01C7/04 , H01C17/24
摘要： Verfahren zum Herstellen von Thermistorchips (1; 11; 21; 31), mit folgenden Schritten: Bereitstellen einer Mehrzahl von Thermistorkörpern (2; 12; 22; 32) aus einem oxidischen halbleitenden Keramikmaterial mit Außenelektroden (3; 13; 23; 33), wobei die Außenelektroden (3; 13; 23; 33) auf Endabschnitten des Thermistorkörpers (2; 12; 22; 32) derart angeordnet sind, dass ein Oberflächenabschnitt des Thermistorkörpers (2; 12; 22; 32) zwischen den Außenelektroden (3; 13; 23; 33) freiliegt; Messen eines Widerstandswertes jedes Thermistorkörpers (2; 12; 22; 32) zwischen den Außenelektroden (3; 13; 23; 33) und Zuordnen der Thermistorkörper (2; 12; 22; 32) zu entsprechenden Klassen; und Eintauchen der Thermistorkörper (2; 12; 22; 32) in ein Lösungsmittel (10), um abhängig von den Klassen in dem freiliegenden Oberflächenabschnitt entsprechende Mengen des Materials des Thermistorkörpers (2; 12; 22; 32) aufzulösen.

6. 发明专利

DE69730186D1 未知
公开(公告)号：DE69730186D1
公开(公告)日：2004-09-16
申请号：DE69730186
申请日：1997-09-24
申请人： MURATA MANUFACTURING CO
发明人： KAWASE MASAHIKO , KIMOTO HIDENOBU , KITO NORIMITSU , TANIGUCHI IKUYA
IPC分类号： H01C1/14 , H01C1/148 , H01C7/00 , H01C7/04 , H01C17/00 , H01C17/28
摘要： Electrodes on both ends of a thermistor chip element (2) each have a first metal layer (6) formed on the thermistor chip element (2) and a second metal layer (8) which has a smaller area than the first metal layer (6) and is formed on the first metal layer (6) such that the mutually opposite edge parts of the first metal layers (6) are exposed. Third metal layers (9) are formed over the second metal layers (8). A fourth metal layer (7) may be formed between the first and second metal layers (6, 8).

7. 发明专利

DE69731592T2 未知
公开(公告)号：DE69731592T2
公开(公告)日：2005-12-22
申请号：DE69731592
申请日：1997-10-07
申请人： MURATA MANUFACTURING CO
发明人： KAWASE MASAHIKO , KIMOTO HIDENOBU , KITO NORIMITSU , TANIGUCHI IKUYA
IPC分类号： H01C1/14 , H01C1/142 , H01C7/00 , H01C7/04 , H01C17/00 , H01C17/28
摘要： A thermistor chip is made by first forming first metal layers (6;26) with a three-layer structure at both end parts of a thermistor element (2) and then forming second metal layers (7;27) with a three-layer structure on the first metal layers (6;26) so as to have edge parts that are formed directly in contact with a surface area of the thermistor element (2) and will reduce its normal temperature resistance value. The first (6;26) and second (7,27) metal layers are each of a three-layer structure with a lower layer (6a,7a;26a,27a) made of a metal with resistance against soldering heat, a middle (6b,7b;26b,27b) layer against soldering heat, and an upper layer (6c,7c;26c,27c) made of a metal having wettability to solder.

8. 发明专利

DE69730186T2 未知
公开(公告)号：DE69730186T2
公开(公告)日：2005-09-01
申请号：DE69730186
申请日：1997-09-24
申请人： MURATA MANUFACTURING CO
发明人： KAWASE MASAHIKO , KIMOTO HIDENOBU , KITO NORIMITSU , TANIGUCHI IKUYA
IPC分类号： H01C1/14 , H01C1/148 , H01C7/00 , H01C7/04 , H01C17/00 , H01C17/28
摘要： Electrodes on both ends of a thermistor chip element (2) each have a first metal layer (6) formed on the thermistor chip element (2) and a second metal layer (8) which has a smaller area than the first metal layer (6) and is formed on the first metal layer (6) such that the mutually opposite edge parts of the first metal layers (6) are exposed. Third metal layers (9) are formed over the second metal layers (8). A fourth metal layer (7) may be formed between the first and second metal layers (6, 8).

9. 发明专利

DE10005800A1 Chip type thermistor for temperature compensation circuit or temperature detecting circuit, has exposed portions of thermistor element, except the external electrode which is removed by using predefined solvent 未知
公开(公告)号：DE10005800A1
公开(公告)日：2001-02-01
申请号：DE10005800
申请日：2000-02-10
申请人： MURATA MANUFACTURING CO
发明人： FUJIMOTO MITSUAKI , FURUKAWA NOBORU , KAWASE MASAHIKO , KITO NORIMITSU
IPC分类号： H01C7/02 , H01C7/04 , H01C17/24
摘要： Chip type thermistor (1) has external electrodes (3) provided to both sides of thermistor element (2). Internal electrodes (4) are formed on thermistor and are connected to respective external electrodes. The remaining exposed portion of thermistor is removed by using predefined solvent.

10. 发明专利

JPH10256005A MANUFACTURE OF ELECTRONIC COMPONENT 失效
公开(公告)号：JPH10256005A
公开(公告)日：1998-09-25
申请号：JP5504997
申请日：1997-03-10
申请人： MURATA MANUFACTURING CO
发明人： KAWASE MASAHIKO , TANIGUCHI IKUYA , URAHARA RYOICHI , KITO NORIMITSU
IPC分类号： H01C1/142 , H01C7/02 , H01C7/04 , H01C17/22
摘要： PROBLEM TO BE SOLVED: To correct a resistance value so as to be set within the range of a target resistance value and to increase nondefective rate by a method wherein ranges of prescribed resistance values are divided into groups and the end face of the electrode of an electronic component in a group whose resistance value is lower than the target resistance value is ground. SOLUTION: Resistance values across electrodes of obtained elements are measured, and ranges of the resistance values are divided into groups. Then, end faces 3a, 3b, 4a, 4b of both main face electrodes 3, 4 of an element 1 which is sorted into a group whose resistance value is lower than a target value are ground. At this time, the end faces 3a, 3b, 4a, 4b of the electrodes 3, 4 are rounded by a barrel polishing operation, an electrode area is reduced, and the resistance value is corrected so as to be increased. In addition, when a plurality of electronic components are obtained, they are manufactured in such a way that the center of the resistance distribution of the electronic components is lower than the center of the range of a target resistance value. Thereby, the nondefective rate of the electronic components is increased.

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