专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2012054654A3 ANTI-FOLATE RECEPTOR ALPHA ANTIBODY GLYCOFORMS 审中-公开
标题翻译：抗体受体ALPHA抗体GLYCOFORFORM
公开(公告)号：WO2012054654A3
公开(公告)日：2012-08-02
申请号：PCT/US2011056966
申请日：2011-10-19
申请人： MORPHOTEK INC , SASS PHILIP M , NICOLAIDES NICHOLAS , GRASSO LUIGI , ROUTHIER ERIC , GU WEI , YOUNG JASON , YAO JUN
发明人： SASS PHILIP M , NICOLAIDES NICHOLAS , GRASSO LUIGI , ROUTHIER ERIC , GU WEI , YOUNG JASON , YAO JUN
IPC分类号： A61K39/395 , C07K16/30
CPC分类号： C07K16/28 , C07K16/00 , C07K2317/41 , C07K2317/732 , C07K2317/77
摘要： The invention provides anti-FRA antibodies with novel N-linked neutral glycan profiles in that the relative amounts of one or more neutral glycans are increased or decreased compared to anti- FRA antibodies produced under reference cell culture conditions. The invention further provides anti-FRA antibodies with altered binding to FRA, altered antibody-dependent cellular cytotoxicity (ADCC) and/or altered rate and/or efficiency of internalization in a cell expressing FRA. In related aspects, the invention provides cell cultures comprising an anti-FRA antibody of the invention, a cell isolated from such a culture, kits and compositions comprising an anti-FRA antibody of the invention, methods of producing an anti-FRA antibody of the invention and diagnostic and therapeutic uses of an anti-FRA antibody of the invention.
摘要翻译：本发明提供具有新型N-连接中性聚糖谱的抗FRA抗体，其中与参考细胞培养条件下产生的抗FRA抗体相比，一种或多种中性聚糖的相对量增加或减少。本发明还提供具有改变的FRA结合，改变的抗体依赖性细胞毒性（ADCC）和/或表达FRA的细胞中内化的速率和/或效率的改变的抗FRA抗体。在相关方面，本发明提供包含本发明的抗FRA抗体的细胞培养物，从这种培养物分离的细胞，包含本发明的抗FRA抗体的试剂盒和组合物，制备本发明的抗FRA抗体的方法本发明的抗FRA抗体的发明和诊断和治疗用途。

2. 发明公开

EP3015764A4 LOW-LIGHT-FAILURE HIGH-POWER LED ROAD LAMP AND MANUFACTURING METHOD THEREFOR 有权
标题翻译： LEISTUNGSSTARKE LED-STRASSENLAMPE MIT GERINGEM LICHTFEHLER UND HERSTELLUNGSVERFAHRENDAFÜR
公开(公告)号：EP3015764A4
公开(公告)日：2016-06-29
申请号：EP14816753
申请日：2014-05-26
申请人： CHEN ZHIMING , GU WEI , SUZHOU WEIYUAN NEW MATERIAL TECHNOLOGY CO LTD
发明人： CHEN ZHIMING , GU WEI
IPC分类号： H01L35/32 , F21V29/51 , F21V29/54 , H01L35/34
CPC分类号： F21V29/76 , F21S8/086 , F21V29/51 , F21V29/54 , F21V29/71 , F21W2131/103 , F21Y2115/10 , H01L35/32 , H01L35/34
摘要： Disclosed is a low light failure high power LED street lamp and a method for manufacturing the same. A color mark is made in advance on a tail end surface used for manufacturing an N-type semiconductor element (6) or a P-type semiconductor element (7); then the N-type semiconductor element (6) and P-type semiconductor element (7) are arranged in a manner of matrix between an upper beryllium-oxide ceramic wafer (8) and a lower beryllium-oxide ceramic wafer (9), so that the head end of the N-type semiconductor element (6) is connected with the tail end of the P-type semiconductor element (7) or the tail end of the N-type semiconductor element (6) is connected with the head end of the P-type semiconductor element (7), then the lower beryllium-oxide ceramic wafer (9) is attached, through a graphene thermal conductive greaseon layer (4), on the backside of the circuit board (2) which is mounted with LED bulbs (3), and a heat sink (15) is mounted on the upper beryllium-oxide ceramic wafer (8), then the circuit board (2) together with the heat sink (15) are mounted into a street lamp housing (1).
摘要翻译：公开了一种低光衰大功率LED路灯及其制造方法。在用于制造N型半导体元件（6）或P型半导体元件（7）的尾端表面上预先制作彩色标记; 那么N型半导体元件（6）和P型半导体元件（7）以上铍氧化物陶瓷晶片（8）和下铍氧化物陶瓷晶片（9）之间的矩阵方式排列，因此 N型半导体元件（6）的前端与P型半导体元件（7）的尾端连接，或者N型半导体元件（6）的尾端与头端通过石墨烯导热油脂层（4），在安装有P型半导体元件（7）的电路板（2）的背面上安装下部铍氧化物陶瓷晶片（9）在上铍氧化物陶瓷晶片（8）上安装有LED灯泡（3）和散热器（15），然后将电路板（2）与散热片（15）一起安装在路灯壳体（ 1）。

3. 发明公开

EP3015765A4 HIGH-POWER LED LAMP COOLING DEVICE AND MANUFACTURING METHOD THEREFOR 有权
标题翻译：高性能LED灯冷却装置及其制造方法
公开(公告)号：EP3015765A4
公开(公告)日：2016-06-29
申请号：EP14818281
申请日：2014-05-26
申请人： CHEN ZHIMING , GU WEI , SUZHOU WEIYUAN NEW MATERIAL TECHNOLOGY CO LTD
发明人： CHEN ZHIMING , GU WEI
IPC分类号： F21V29/54 , F21V29/70 , F21Y115/10 , H01L35/30 , H01L35/34
CPC分类号： H01L33/64 , F21V29/51 , F21V29/52 , F21V29/54 , F21V29/70 , F21Y2101/00 , F21Y2115/10 , H01L23/373 , H01L23/3737 , H01L33/645 , H01L35/30 , H01L2924/0002 , H01L2933/0075 , H01L2924/00
摘要： Disclosed are a high-power LED lamp cooling device and a method for manufacturing the same. The method includes: manufacturing a semiconductor crystal bar used for manufacturing N-type semiconductor elements or P-type semiconductor elements in advance into a cone-shaped crystal bar of which one end has a large diameter and the other end has a small diameter, and then making a color mark on each wafer as the large-diameter end surface of the tail end when the cone-shaped semiconductor crystal bar is cut into slices; and cutting and pelletizing the conical surface of each wafer to obtain polygonal cylindrical N-type semiconductor elements or P-type semiconductor elements, arranging the N-type semiconductor elements and the P-type semiconductor elements in a matrix form between two beryllium-oxide ceramic chips which are provided with conductive circuits, and connecting the head end of each column of N-type semiconductor elements to the tail end of the P-type semiconductor elements in series mutually, so as to manufacture a high-power LED lamp cooling device. The high-power LED lamp cooling device can realize the technical effects of: good cooling effect, high working efficiency and low energy consumption and being capable of reducing the light failure of an LED lamp, and prolonging the service life of the high-power LED lamp.

4. 发明公开

EP3016155A4 METHOD FOR MANUFACTURING N-TYPE SEMICONDUCTOR ELEMENT FOR REFRIGERATION OR HEATING DEVICE 有权
标题翻译：方法生产N-半导体元件进行冷却或加热装置
公开(公告)号：EP3016155A4
公开(公告)日：2016-11-30
申请号：EP14816818
申请日：2014-05-26
申请人： CHEN ZHIMING , GU WEI , SUZHOU WEIYUAN NEW MATERIAL TECHNOLOGY CO LTD
发明人： CHEN ZHIMING , GU WEI
IPC分类号： H01L35/34 , B28D5/00 , C01B19/00 , C30B15/10 , C30B15/14 , C30B29/46
CPC分类号： C30B29/46 , B28D5/00 , C01B19/007 , C30B15/10 , C30B15/14 , H01L35/34
摘要： Disclosed is a method for manufacturing an N-type semiconductor element for a cooling or heating device, the N-type semiconductor element is made of tellurium material, bismuth material and selenium material, firstly, smashing and grinding the tellurium material, the bismuth material and the selenium material to be 2000 meshes or more than 2000 meshes; and then, according to the proportion of each material in parts by weight, proportioning the materials to obtain a mixture, the proportion thereof is: 40 to 44 parts of tellurium, 53 to 57 parts of bismuth and 28 to 32 parts of selenium. When the N-type semiconductor element is in operation, the temperature difference between the two ends thereof is larger, and through a test, when the N-type semiconductor element is in operation, the temperature difference between the cold end and the hot end reaches about 73°C to 78°C. Therefore, the N-type semiconductor element has the advantages of high operation efficiency and lower energy consumption. The N-type semiconductor element is particularly suitable for manufacturing a cooling or heating device of a semiconductor.

5. 发明申请

WO2006116660A2 METHODS OF INHIBITING A GPCR 审中-公开
标题翻译：抑制GPCR的方法
公开(公告)号：WO2006116660A2
公开(公告)日：2006-11-02
申请号：PCT/US2006016174
申请日：2006-04-27
申请人： AMGEN INC , GU WEI , GRAHAM MELISSA L , VENIANT-ELLISON MURIELLE
发明人： GU WEI , GRAHAM MELISSA L , VENIANT-ELLISON MURIELLE
IPC分类号： G01N33/68 , A61K39/395 , A61K48/00
CPC分类号： G01N33/74 , G01N33/6893 , G01N2333/726 , G01N2500/00 , G01N2800/044
摘要： The invention provides methods of identifying modulators, for example, inhibitors, of a G-protein coupled receptor. The modulators can be used for the treatment or prevention of metabolic disorders such as dyslipidemia, metabolic syndrome and obesity. The invention also provides methods of treating or preventing metabolic disorders by administering modulators of G-protein coupled receptor function.
摘要翻译：本发明提供鉴定G蛋白偶联受体的调节剂，例如抑制剂的方法。调节剂可用于治疗或预防代谢性疾病如血脂异常，代谢综合征和肥胖症。本发明还提供了通过施用G蛋白偶联受体功能调节剂治疗或预防代谢紊乱的方法。

6. 发明专利

AU2014301911B2 Low light failure, high-power led street lamp and method for manufacturing the same 未知
公开(公告)号：AU2014301911B2
公开(公告)日：2017-10-12
申请号：AU2014301911
申请日：2014-05-26
申请人： CHEN ZHIMING , GU WEI , SUZHOU WEIYUAN NEW MATERIAL TECHNOLOGY CO LTD
发明人： CHEN ZHIMING , GU WEI
IPC分类号： F21V29/51 , F21V29/54 , H01L23/367
摘要： Disclosed are a low-light-failure high-power LED road lamp and a manufacturing method therefor. The method comprises: making a colour mark in advance on a tail end surface used for manufacturing N-type semiconductor elements (6) or P-type semiconductor elements (7); and arranging the N-type semiconductor elements (6) and the P-type semiconductor elements (7) in a matrix form between an upper beryllium-oxide ceramic chip (8) and a lower beryllium-oxide ceramic chip (9) which are provided with conductive circuits, to make the head end of each column of N-type semiconductor elements (6) connected in series connect to the tail end of the P-type semiconductor elements (7) or the tail end of each column of N-type semiconductor elements (6) connect to the head end of the P-type semiconductor elements (7), then attaching the lower beryllium-oxide ceramic chip (9) to the back surface of a circuit board (2) equipped with LED bulbs (3) through a graphene heat conduction grease layer (4), installing radiators (15) on the upper beryllium-oxide ceramic chip (8), and then installing both the circuit board (2) and the radiators (15) in a road lamp housing (1).

7. 发明申请

WO0185768A2 NOVEL G-PROTEIN COUPLED RECEPTORS AND USES THEREFOR 审中-公开
标题翻译：新型G蛋白偶联受体及其用途
公开(公告)号：WO0185768A2
公开(公告)日：2001-11-15
申请号：PCT/US0115002
申请日：2001-05-08
申请人： MILLENNIUM PHARM INC , GU WEI
发明人： GU WEI
IPC分类号： A61K38/00 , C07K14/705 , C12N15/12 , C07K14/00
CPC分类号： C07K14/705 , A01K2217/05 , A61K38/00 , C07K2319/00
摘要： Novel G-protein coupled receptor molecules, designated LGR6 polypeptides, proteins, and nucleic acid molecules, are disclosed. In addition to isolated, LGR6 proteins, the invention further provides isolated LGR6 fusion proteins, antigenic peptides and anti-LGR6 antibodies. The invention also provides LGR6 nucleic acid molecules, recombinant expression vectors containing a nucleic acid molecule of the invention, host cells into which the expression vectors have been introduced and non-human transgenic animals in which an LGR6 gene has been introduced or disrupted. Diagnostic, screening and therapeutic methods utilizing compositions of the invention are also provided.
摘要翻译：公开了命名为LGR6多肽，蛋白质和核酸分子的新型G蛋白偶联受体分子。除分离的LGR6蛋白外，本发明还提供分离的LGR6融合蛋白，抗原肽和抗LGR6抗体。本发明还提供了LGR6核酸分子，含有本发明的核酸分子的重组表达载体，已经引入了表达载体的宿主细胞和已导入或破坏了LGR6基因的非人转基因动物。还提供利用本发明组合物的诊断，筛选和治疗方法。

8. 发明专利

DK3016155T3 N-TYPE HALVLEDERELEMENT TIL ET KØLE- ELLER VARMEAPPARATUR 未知
公开(公告)号：DK3016155T3
公开(公告)日：2018-06-06
申请号：DK14816818
申请日：2014-05-26
申请人： CHEN ZHIMING , GU WEI , SUZHOU WEIYUAN NEW MATERIAL TECH CO LTD
发明人： CHEN ZHIMING , GU WEI
IPC分类号： H01L35/34 , B28D5/00 , C01B19/00 , C30B15/10 , C30B15/14 , C30B29/46

9. 发明专利

AU2014301912B2 High-power LED lamp cooling device and manufacturing method therefor 未知
公开(公告)号：AU2014301912B2
公开(公告)日：2017-10-19
申请号：AU2014301912
申请日：2014-05-26
申请人： CHEN ZHIMING , GU WEI , SUZHOU WEIYUAN NEW MATERIAL TECHNOLOGY CO LTD
发明人： CHEN ZHIMING , GU WEI
IPC分类号： F21V29/70 , H01L23/34
摘要： Disclosed are a high-power LED lamp cooling device and a manufacturing method therefor. The method comprises: manufacturing a semiconductor crystal bar used for manufacturing N-type semiconductor elements or P-type semiconductor elements in advance into a cone-shaped crystal bar of which one end has a large diameter and the other end has a small diameter, and then making a colour mark on each wafer as the large-diameter end surface of the tail end when the cone-shaped semiconductor crystal bar is cut into slices; and cutting and pelletizing the conical surface of each wafer to obtain polygonal cylindrical N-type semiconductor elements or P-type semiconductor elements, arranging the N-type semiconductor elements and the P-type semiconductor elements in a matrix form between two beryllium-oxide ceramic chips which are provided with conductive circuits, and connecting the head end of each column of N-type semiconductor elements to the tail end of the P-type semiconductor elements in series mutually, so as to manufacture a high-power LED lamp cooling device. The high-power LED lamp cooling device can realize the technical effects of having a good cooling effect, high work efficiency and low energy consumption and being capable of reducing the light failure of an LED lamp, and prolonging the service life of the high-power LED lamp.

10. 发明专利

AU2014301912A1 High-power led lamp cooling device and manufacturing method therefor 未知
公开(公告)号：AU2014301912A1
公开(公告)日：2016-02-11
申请号：AU2014301912
申请日：2014-05-26
申请人： GU WEI , CHEN ZHIMING , SUZHOU WEIYUAN NEW MATERIAL TECHNOLOGY CO LTD
发明人： CHEN ZHIMING , GU WEI
IPC分类号： F21V29/00 , F21V29/70 , H01L23/34
摘要： Disclosed are a high-power LED lamp cooling device and a manufacturing method therefor. The method comprises: manufacturing a semiconductor crystal bar used for manufacturing N-type semiconductor elements or P-type semiconductor elements in advance into a cone-shaped crystal bar of which one end has a large diameter and the other end has a small diameter, and then making a colour mark on each wafer as the large-diameter end surface of the tail end when the cone-shaped semiconductor crystal bar is cut into slices; and cutting and pelletizing the conical surface of each wafer to obtain polygonal cylindrical N-type semiconductor elements or P-type semiconductor elements, arranging the N-type semiconductor elements and the P-type semiconductor elements in a matrix form between two beryllium-oxide ceramic chips which are provided with conductive circuits, and connecting the head end of each column of N-type semiconductor elements to the tail end of the P-type semiconductor elements in series mutually, so as to manufacture a high-power LED lamp cooling device. The high-power LED lamp cooling device can realize the technical effects of having a good cooling effect, high work efficiency and low energy consumption and being capable of reducing the light failure of an LED lamp, and prolonging the service life of the high-power LED lamp.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式