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1. 发明专利

SG11201707977PA METHOD FOR MANUFACTURING FILLING PLANARIZATION FILM AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE 未知
公开(公告)号：SG11201707977PA
公开(公告)日：2017-10-30
申请号：SG11201707977P
申请日：2016-03-24
申请人： MITSUI CHEMICALS INC
发明人： TANAKA HIROFUMI , KAYABA YASUHISA , WACHI HIROKO , INOUE KOJI , ONO SHOKO
IPC分类号： H01L21/312 , H01L21/76
摘要： A method for manufacturing a filling planarization film, the method including: a first coating step of applying a first coating liquid, containing a polyamine and a first solvent, to a region including a recessed part of a member having the recessed part, to fill the first coating liquid into the recessed part; and a second coating step of applying a second coating liquid, containing an organic substance having two or more carboxyl groups and a second solvent having a boiling point of 200° C. or less and an SP value of 30 (MPa)1/2 or less, to the region including the recessed part of the member into which the first coating liquid has been filled.

2. 发明专利

SG11201700576UA SEALING COMPOSITION AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 未知
公开(公告)号：SG11201700576UA
公开(公告)日：2017-02-27
申请号：SG11201700576U
申请日：2015-08-05
申请人： MITSUI CHEMICALS INC
发明人： KAYABA YASUHISA , TANAKA HIROFUMI , ONO SHOKO , INOUE KOJI , WACHI HIROKO , SUZUKI TSUNEJI
IPC分类号： H01L21/312 , H01L21/768 , H01L23/532
摘要： The invention provides a sealing composition including: polymer (A) containing a cationic functional group and having a weight average molecular weight of from 2,000 to 1,000,000; and a benzotriazole compound; in which the content of the polymer (A) is from 0.05 parts by mass to 0.20 parts by mass with respect to 100 parts by mass of the sealing composition; in which the content of the benzotriazole compound in the sealing composition is from 3 ppm by mass to 200 ppm by mass; and in which the sealing composition has a pH of from 3.0 to 6.5.

3. 发明专利

SG11201804077PA SEMICONDUCTOR FILM COMPOSITION, METHOD OF MANUFACTURING SEMICONDUCTOR FILM COMPOSITION, METHOD OF MANUFACTURING SEMICONDUCTOR MEMBER, METHOD OF MANUFACTURING SEMICONDUCTOR PROCESSING MATERIAL, AND SEMICONDUCTOR DEVICE 未知
公开(公告)号：SG11201804077PA
公开(公告)日：2018-06-28
申请号：SG11201804077P
申请日：2016-11-16
申请人： MITSUI CHEMICALS INC
发明人： KAYABA YASUHISA , TANAKA HIROFUMI , WACHI HIROKO , ONO SHOKO
IPC分类号： H01L21/312 , C08K5/092 , C08L101/02
摘要： SEMICONDUCTOR FILM COMPOSITION, METHOD OF MANUFACTURING SEMICONDUCTOR FILM COMPOSITION, METHOD OF MANUFACTURING SEMICONDUCTOR MEMBER, METHOD OF MANUFACTURING SEMICONDUCTOR PROCESSING MATERIAL, AND SEMICONDUCTOR DEVICE A semiconductor film composition including: a compound (A) including a cationic functional group containing at least one of a primary nitrogen atom or a secondary nitrogen atom and having a weight average molecular weight of from 10,000 to 400,000; a crosslinking agent (B) which includes the three or more -C(=O)OX groups (X is a hydrogen atom or an alkyl group having from 1 to 6 carbon atoms) in the molecule, in which from one to six of three or more -C(=O)OX groups are -C(=O)OH groups, and which has a weight average molecular weight of from 200 to 600; and water (D), in which the compound (A) is an aliphatic amine. [No Suitable Figure]

4. 发明专利

JP2004123950A Abrasive 审中-公开
标题翻译：磨料
公开(公告)号：JP2004123950A
公开(公告)日：2004-04-22
申请号：JP2002291751
申请日：2002-10-04
申请人： Mitsui Chemicals Inc , 三井化学株式会社
发明人： WACHI HIROKO , SHINDO KIYOTAKA
IPC分类号： B24B37/00 , C09K3/14 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide abrasives which cause neither scratching nor dishing even with a higher polishing rate. SOLUTION: The abrasive comprises an organic fine particle having a functional group which can form a complex with metal, a water soluble compound which can form a complex with metal, an oxidizing agent and water. The organic fine particle is composed of a copolymer obtained by polymerizing a monomer composition comprising from 1 to 50mass% of an unsaturated carboxylic acid monomer and from 99 to 50mass% of a vinyl monomer based on the mass of the total monomers. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供即使以更高的抛光速率也不会造成刮擦或凹陷的磨料。溶剂：研磨剂包括具有可与金属形成络合物的官能团的有机细颗粒，可与金属形成络合物的水溶性化合物，氧化剂和水。有机细颗粒由基于总单体的质量聚合包含1至50质量％的不饱和羧酸单体和99至50质量％的乙烯基单体的单体组合物而获得的共聚物组成。版权所有（C）2004，JPO

5. 发明专利

JP2004059837A Supercritical fluid composition and its use 审中-公开
标题翻译：超临界流体组合物及其用途
公开(公告)号：JP2004059837A
公开(公告)日：2004-02-26
申请号：JP2002222754
申请日：2002-07-31
申请人： Mitsui Chemicals Inc , 三井化学株式会社
发明人： WACHI HIROKO , SHINDO KIYOTAKA
IPC分类号： C11D7/50 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a method for cleaning a semiconductor substrate by removing hardly removable noble metals without damaging the substrate and apparatuses.
SOLUTION: The method for the cleaning of a semiconductor substrate comprises the washing with a supercritical fluid composition containing carbon dioxide and a hydrocarbon expressed by general formula (1) (R1 to R5 are each independently H, a 1-5C alkyl, an alkenyl or an alkynyl).
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种通过去除几乎不可除去的贵金属来清洁半导体衬底而不损坏衬底和设备的方法。解决方案：用于清洁半导体衬底的方法包括用含有二氧化碳和由通式（1）表示的烃的超临界流体组合物进行洗涤（R1至R5各自独立地为H，1-5C烷基，烯基或炔基）。版权所有（C）2004，JPO

6. 发明专利

JP2000178008A PRODUCTION OF HYDROCHLORIC ACID GAS 失效
公开(公告)号：JP2000178008A
公开(公告)日：2000-06-27
申请号：JP35281798
申请日：1998-12-11
申请人： MITSUI CHEMICALS INC
发明人： WACHI HIROKO , HARADA ISAO , INOUE HIROYUKI
IPC分类号： C01B7/01
摘要： PROBLEM TO BE SOLVED: To provide a method for inexpensively producing high purity HCl gas by dehydrating or decomposing a HCl aq. solution or a chlorine compound with sulfuric acid. SOLUTION: In the method for generating HCl gas by dehydrating the HCl aq. solution with sulfuric acid or decomposing the chlorine compound with sulfuric acid, CO2 present in sulfuric acid is previously removed. The CO2 dissolved in sulfuric acid is removed by the method that an inert gas is bubbled in sulfuric acid or the sulfuric acid is heated to 50-150 deg.C.

7. 发明专利

JPH1190180A METHOD FOR DETOXIFYING NITROGEN TRIFLUORIDE 失效
公开(公告)号：JPH1190180A
公开(公告)日：1999-04-06
申请号：JP25896797
申请日：1997-09-24
申请人： MITSUI CHEMICALS INC
发明人： JINBO TAKASHI , YASUTAKE TAKESHI , HARADA ISAO , WACHI HIROKO
IPC分类号： B01D53/86 , B01J23/44 , B01J23/72 , B01J23/755
摘要： PROBLEM TO BE SOLVED: To treat NF3 in a safe and efficient manner by intermittently supplying NF3 -contg. waste gas to a catalyst bed when the NF3 -contg. waste gas is allowed to react with hydrogen in the presence of a catalyst to make the NF3 harmless. SOLUTION: When NF3 -contg. gas such as waste gas from a super-LSI etching device is detoxified, it is intermittently supplied to a catalyst bed. The catalyst used contains a 1st component selected from among Fe, Co, Ni, Cu, Zn, Ru, Rh, Pd, Ag, Pt, etc., and one or more of fluorides of alkali metals and alkaline earth metals as a 2nd component. It is preferable that the NF3 - contg. waste gas is supplied to the catalyst bed for a prescribed time, NF3 -free gas is then supplied for a prescribed time and this cycle is repeated. A high rate of conversion of NF3 is attained.

8. 发明专利

JPH1171180A PRODUCTION OF ALUMINUM NITRIDE SINTERED COMPACT 失效
公开(公告)号：JPH1171180A
公开(公告)日：1999-03-16
申请号：JP27475097
申请日：1997-10-07
申请人： MITSUI CHEMICALS INC
发明人： SHIMODA MANABU , YASUTAKE TAKESHI , HARADA ISAO , WACHI HIROKO
IPC分类号： C04B35/626
摘要： PROBLEM TO BE SOLVED: To obtain an aluminum nitride sintered compact improved in water resistance and having dense, uniform texture by grinding aluminum nitride powder in a phosphoric acid solution so as to prevent the aluminum nitride powder from hydrolysis followed by molding and then sintering the powder. SOLUTION: This aluminum nitride sintered compact is obtained by grinding aluminum nitride powder in a phosphoric acid solution 0.1-20 wt.% in phosphoric acid concentration followed by mixing the powder with a molding auxiliary and an organic binder and then molding followed by sintering; alternatively, by mixing aluminum powder with phosphate powder followed by incorporating the mixture in a dispersion medium with the phosphate soluble therein into a slurry followed by grinding, molding and then sintering. It is especially preferable that the aluminum nitride powder is prepared by such a gas phase reaction process that an organoaluminum compound is reacted with ammonia followed by heating. The aluminum nitride powder grinding can be carried out at room temperature and at low cost in terms of equipment, also at low cost because water or e.g. an alcohol contg. water is usable as the dispersion medium, therefore improvements can also be accomplished in terms of environment and safety.

9. 发明专利

JP2011249014A Surface treatment device 审中-公开
标题翻译：表面处理装置
公开(公告)号：JP2011249014A
公开(公告)日：2011-12-08
申请号：JP2010117583
申请日：2010-05-21
申请人： Mitsui Chemicals Inc , 三井化学株式会社
发明人： USUI HIDEO , SADAMOTO MITSURU , ODAGAWA KENJI , WACHI HIROKO
IPC分类号： H05H1/24 , B01J19/08 , H01T19/04
摘要： PROBLEM TO BE SOLVED: To provide a surface treatment device capable of uniformly plasma treating a workpiece.SOLUTION: A surface treatment device 100 includes an inner cylinder 10, an outer cylinder 20, an electrode 30, a workpiece supply portion 40, a gas introduction portion 50, and a rotary drive mechanism 60. The outer cylinder 20 is provided rotatably for the inner cylinder 10 and accommodates the inner cylinder 10. The workpiece supply portion 40 supplies the workpiece to a reaction space V between the outer cylinder 20 and inner cylinder 10. The gas introduction portion 50 supplies gas to the reaction space V. The electrode 30 is an electrode for plasma generation provided mutually opposite peripheral surfaces of the inner cylinder 10 and outer cylinder 20, and includes an application electrode 32 and a ground electrode 34. The rotary drive mechanism 60 axially rotates the inner cylinder 10 and outer cylinder 20 relatively.
摘要翻译：要解决的问题：提供能够均匀等离子体处理工件的表面处理装置。解决方案：表面处理装置100包括内筒10，外筒20，电极30，工件供应部40，气体导入部50和旋转驱动机构60.外筒20 内筒10可旋转并容纳内筒10.工件供给部40将工件供给到外筒20与内筒10之间的反应空间V.气体导入部50向反应空间V供给气体。电极30是用于等离子体生成的电极，其设置在内筒10和外筒20的相对的周向表面上，并且包括施加电极32和接地电极34.旋转驱动机构60使内筒10和外筒20轴向旋转相对。版权所有（C）2012，JPO＆INPIT

10. 发明专利

JP2011047026A Plating powder 审中-公开
标题翻译：涂粉
公开(公告)号：JP2011047026A
公开(公告)日：2011-03-10
申请号：JP2009198910
申请日：2009-08-28
申请人： Mitsui Chemicals Inc , 三井化学株式会社
发明人： YANAGIMOTO YASUSHI , FUJIMURA FUTOSHI , WACHI HIROKO , SADAMOTO MITSURU , HAYASHISHITA HIDEJI
IPC分类号： C23C18/16 , C23C18/30
摘要： PROBLEM TO BE SOLVED: To provide a polyethylene grain whose surface is uniformly applied with metal plating, and to provide a method for producing the polyethylene grain. SOLUTION: The functional fine grain is characterized in that an electroless plating layer is formed on the surface of a resin grain with the average grain size of 1-100 μm, and the resin grain is a graft-copolymer obtained by graft-polymerizing a polar monomer to a polyethylene grain. The method for graft-polymerizing the polar monomer is a radiation graft polymerization. COPYRIGHT: (C)2011,JPO&INPIT

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