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    • 8. 发明专利
    • Sputtering target and arranging method therefor
    • 溅射目标和安装方法
    • JP2003073817A
    • 2003-03-12
    • JP2001265093
    • 2001-08-31
    • Mitsubishi Materials Corp三菱マテリアル株式会社
    • SUGAWARA KATSUOSAITO SADAOTAKADA YOSHIAKI
    • B21B3/00C23C14/34H01L21/285
    • PROBLEM TO BE SOLVED: To provide a sputtering target which can increase leakage flux density, can make an anisotropy in the sputtered surface larger than that considered from magnetic permeability, therefore, can greatly improve a uniformity for a function of a thin film within the surface, and hence can form the thin film of high quality, and to provide an arranging method therefor.
      SOLUTION: The objective target is characterized by making the permeability of one direction in a sputter face 11a of the target 11 which contains cobalt as a main component and is introduced with distortion inside, to be the minimum permeability μ
      11 within the sputter face, making permeability in a perpendicular direction to that of the minimum permeability μ
      11 within the sputter face in the sputtering side 11a, to be the maximum permeability μ
      12 within the sputter face, making permeability in a vertical direction to the sputter face 11a, to be vertically oriented permeability μ
      13 with respect to the sputter face, and further making the vertically oriented permeability μ
      13 , to be larger than the maximum permeability μ
      12 within the sputter face.
      COPYRIGHT: (C)2003,JPO
    • 要解决的问题:为了提供可以增加漏磁通密度的溅射靶,可以使溅射表面的各向异性大于由磁导率考虑的溅射靶,因此可以大大提高表面内的薄膜的功能的均匀性 ,因此可以形成高质量的薄膜,并提供其布置方法。 解决方案:目标靶的特征在于使靶11的溅射面11a的一个方向的磁导率为含有钴作为主要成分并被引入内部变形,作为溅射面内的最小磁导率μ11, 在与溅射侧11a的溅射面内的最小磁导率μ11的垂直方向垂直的方向上,作为溅射面内的最大磁导率μ12,使与溅射面11a垂直的导磁率成为垂直取向导磁率μ13 相对于溅射面,并且进一步使垂直取向的导磁率μ13大于溅射面内的最大磁导率μ12。