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1. 发明专利

DE69324085T2 未知
公开(公告)号：DE69324085T2
公开(公告)日：1999-07-15
申请号：DE69324085
申请日：1993-09-06
申请人： NIPPON STEEL CORP , INT SUPERCONDUCTIVITY TECH , MITSUBISHI ELECTRIC CORP , HOKKAIDO ELECTRIC POWER
发明人： ITO WATARU , MORISHITA TADATAKA , HOMMA NORIO , YOSHIDA YUKIHISA
IPC分类号： C01G1/00 , C01G3/00 , C23C14/08 , C23C14/35 , C23C14/46 , C30B29/22 , H01L39/24 , C04B35/50
摘要： A method of making a superconducting thin film of a Y-Ba-Cu-O series material by using a diode parallel plate type sputtering apparatus including a vacuum chamber (1), a substrate (6) disposed within the vacuum chamber and having a substantially flat surface on which the superconducting thin film is to be formed, and a plate-shaped target (5) functioning as a cathode and disposed within the vacuum chamber to parallelly face to the flat surface of the substrate, the target being made of the same material as the superconducting thin film, a plasma gas being introduced into the vacuum chamber, and a voltage being applied between the cathode and the substrate, wherein the method comprises the steps of applying a high frequency voltage having a frequency higher than 40 MHz between the cathode and the substrate to generate plasma of the introduced gas, superimposing a DC voltage (V) on the high frequency voltage in a polarity that the cathode becomes negative, and setting the DC voltage at a value where the DC voltage is substantially unchanged with variation of a cathode current flowing through the target when adjusting the DC voltage and controlling a value of the DC current while maintaining the DC voltage substantially at the set value.

2. 发明专利

DE69402619T2 未知
公开(公告)号：DE69402619T2
公开(公告)日：1997-09-18
申请号：DE69402619
申请日：1994-06-23
申请人： MITSUBISHI ELECTRIC CORP , NIPPON STEEL CORP , INT SUPERCONDUCTIVITY TECH
发明人： YOSHIDA YUKIHISA , ITO WATARU , MORISHITA TADATAKA
IPC分类号： C23C14/34 , C23C14/08 , C23C14/35 , C23C14/44 , C30B23/08 , H01L39/24 , C23C14/40

3. 发明公开

EP1203748A4 MICRODEVICE AND ITS PRODUCTION METHOD 有权
标题翻译：科技组件及其制造方法
公开(公告)号：EP1203748A4
公开(公告)日：2005-06-01
申请号：EP00900814
申请日：2000-01-19
申请人： MITSUBISHI ELECTRIC CORP
发明人： YOSHIDA YUKIHISA , CHABLOZ MARTIAL , JIAO JIWEI , MATSUURA TSUKASA , TSUTSUMI KAZUHIKO
IPC分类号： B81B3/00 , B81B7/00 , B81C1/00 , G01P1/02 , G01P15/08 , G01P15/125 , G02B26/08 , H01L29/84
CPC分类号： G01P15/125 , B81B2201/0228 , B81B2203/0136 , B81C1/0015 , B81C1/00579 , G01P1/023 , G01P15/0802 , G01P2015/0814 , Y10T29/49002 , Y10T29/49117
摘要： A microdevice comprises an insulator base having a recess therein and a beamlike silicon structural body provided in the front side of the base and surrounding the recess. The beamlike structural body includes a functional section that comprises a support joined to the base, a cantilevered beam integrated with the support and extending over the recess, and a conductive film formed at least over the surface of the recess immediately under the cantilevered beam and electrically connected to the support. The conductive film serves to prevent the recess from being charged positively during dry etching. Therefore the etching gas having positive charge is repelled by the electrical repulsive force exerted by the recess and do not corrode the structural body. Thus such a microdevice has a beamlike structural body of high shape and dimensional precisions, providing high reliability and high degree of freedom of design.

4. 发明公开

EP1396727A4 SILICON DEVICE 审中-公开
标题翻译：硅成分
公开(公告)号：EP1396727A4
公开(公告)日：2009-06-17
申请号：EP01938625
申请日：2001-06-13
申请人： MITSUBISHI ELECTRIC CORP
发明人： YOSHIDA YUKIHISA , KUMAGAI MUNEHITO , TSUTSUMI KAZUHIKO
IPC分类号： G01C19/56 , G01P1/02 , G01P15/08 , G01P15/125 , G01P9/04 , H01L29/84
CPC分类号： G01C19/5755 , G01P1/023 , G01P15/0802 , G01P15/125 , G01P2015/0814 , Y10T428/24612
摘要： A silicon device comprising: an insulating substrate; a beam-shaped structure of silicon jointed through a cavity to the insulating substrate; and a frame of silicon jointed to the insulating substrate while surrounding the beam-shaped structure at a spacing. The beam-shaped structure includes at least one functional portion composed of: a support portion jointed to the insulating substrate; and at least one cantilever formed integrally with the support portion and extending into the cavity. On the surface of the insulating substrate at least directly below the cantilever, there is formed a conductive film which is conductive with the frame. The conductive film prevents the surface of the insulating substrate from being positively charged at a dry etching time. As a result, a positively charged etching gas is not recoiled from the surface of the insulating substrate by the electric repulsion so that it does not corrode the beam-shaped structure. With this beam-shaped structure having highly accurate shape and size, therefore, the silicon device can provide a high reliability and a high degree of freedom of design.

5. 发明专利

DE112016006445T5 Spiegelantriebsvorrichtung sowie Verfahren zur Herstellung einer Spiegelantriebsvorrichtung 未知
公开(公告)号：DE112016006445T5
公开(公告)日：2018-11-29
申请号：DE112016006445
申请日：2016-12-13
申请人： MITSUBISHI ELECTRIC CORP
发明人： ITO TAKAHIKO , KONNO NOBUAKI , HIRATA YOSHIAKI , YOSHIDA YUKIHISA
IPC分类号： G02B26/08 , B81B3/00
摘要： Eine Spiegelantriebsvorrichtung (100) weist ein Paar von Trägerbereichen benachbart zu einem Reflektor (11M) auf, um den Reflektor (11M) sandwichartig zwischen den Trägerbereichen anzuordnen, wie in einer Draufsicht zu sehen. Das Paar von Trägerbereichen weist Folgendes auf: ein Paar von ersten Trägern (11BL1, 11BR1) direkt benachbart zu dem Reflektor (11M), um den Reflektor sandwichartig zwischen den ersten Trägern anzuordnen; sowie ein Paar von zweiten Trägern (11BL2, 11BR2), die jeweils mit einer Seite eines entsprechenden der ersten Träger (11BL1, 11BR1) gekoppelt sind, wobei sich die eine Seite in Bezug auf den entsprechenden der ersten Träger entgegengesetzt zu dem Reflektor (11M) befindet. Eine Mehrzahl von Elektroden (14) befindet sich voneinander beabstandet an einer Hauptoberfläche von jedem der ersten Träger (11BL1, 11BR1), wobei ein piezoelektrisches Material zwischen der Hauptoberfläche und der Mehrzahl von Elektroden (14) eingefügt ist. Die ersten Träger (11BL1, 11BR1) sind in jeweiligen Richtungen, die entgegengesetzt zueinander sind, quer zu der Hauptoberfläche verschiebbar. Das Paar von zweiten Trägern (11BL2, IIBR2) ist in einer Richtung, welche die ersten Träger (11BL1, 11BR1) und die zweiten Träger (11BL2, 11BR2) verbindet, entlang der Hauptoberfläche der zweiten Träger (11BL2, 11BR2) verschiebbar.

6. 发明专利

DE60237239D1 EINRICHTUNG MIT SILIZIUMSUBSTRAT UND VERFAHREN ZU IHRER HERSTELLUNG 未知
公开(公告)号：DE60237239D1
公开(公告)日：2010-09-16
申请号：DE60237239
申请日：2002-09-04
申请人： MITSUBISHI ELECTRIC CORP
发明人： KUMAGAI MUNEHITO , YOSHIDA YUKIHISA , MATSUURA TSUKASA , HONMA YUKIHIRO
IPC分类号： H03D9/06 , H01L39/22 , H01P3/12 , H01P11/00

7. 发明专利

DE69402619D1 未知
公开(公告)号：DE69402619D1
公开(公告)日：1997-05-22
申请号：DE69402619
申请日：1994-06-23
申请人： MITSUBISHI ELECTRIC CORP , NIPPON STEEL CORP , INT SUPERCONDUCTIVITY TECH
发明人： YOSHIDA YUKIHISA , ITO WATARU , MORISHITA TADATAKA
IPC分类号： C23C14/34 , C23C14/08 , C23C14/35 , C23C14/44 , C30B23/08 , H01L39/24 , C23C14/40

8. 发明专利

DE112006002946T5 未知
公开(公告)号：DE112006002946T5
公开(公告)日：2009-01-02
申请号：DE112006002946
申请日：2006-08-30
申请人： MITSUBISHI ELECTRIC CORP
发明人： IZUO SHINICHI , TAGUCHI MOTOHISA , YAMASHITA AKIRA , YOSHIDA YUKIHISA
IPC分类号： G01L9/00 , H01L29/84
摘要： A semiconductor pressure sensor comprises a silicon support substrate (1), an insulating layer (2) formed on the silicon support substrate (1), and a silicon thin plate (3) formed on the insulating layer (2). A through-hole (1a) extending in the thickness direction of the silicon support substrate (1) is formed in the silicon support substrate (1). The silicon thin plate (3) located on an extension of the through-hole (1a) functions as a diaphragm (23) that is deformed by an external pressure. The insulating layer (2) remains over the entire lower surface of the diaphragm (23). The thickness of the insulating layer (2) decreases from the peripheral portion toward the central portion of the diaphragm (23). This provides the semiconductor pressure sensor capable of reducing both the offset voltage and the variation of output voltage caused by the variation of temperature and its fabrication method.

9. 发明专利

DE60034791T2 未知
公开(公告)号：DE60034791T2
公开(公告)日：2008-01-17
申请号：DE60034791
申请日：2000-01-19
申请人： MITSUBISHI ELECTRIC CORP
发明人： YOSHIDA YUKIHISA , CHABLOZ MARTIAL , JIAO JIWEI , MATSUURA TSUKASA , TSUTSUMI KAZUHIKO
IPC分类号： B81B3/00 , B81B7/00 , B81C1/00 , G01P1/02 , G01P15/08 , G01P15/125 , G02B26/08 , H01L29/84
摘要： A micro-device including an insulating substrate having a recess formed on the surface thereof, and a beam-like structure made of silicon formed on the front surface of the insulating substrate to surround the recess. The beam-like structure includes at least one functional section, and the functional section has a supporting section bonded onto the insulating substrate and at least one cantilever formed integrally with the supporting section while extending across the recess. The micro device also has an electrically conductive film electrically connected with the supporting section and formed on the surface of the recess at least in a portion right under a cantilever. The electrically conductive film prevents the surface of the recess from being positively charged in the dry etching process. Thus the etching gas having positive charge is not subjected to electrical repulsion of the recess and does not impinge on the back surface of the silicon substrate, and therefore erosion of the cantilever does not occur. As a result, since the beam-like structure is formed with high accuracy in the shape and dimensions, the micro device of the present invention can improve a high reliability and a degree of freedom in design of the micro device.

10. 发明专利

DE60034791D1 未知
公开(公告)号：DE60034791D1
公开(公告)日：2007-06-21
申请号：DE60034791
申请日：2000-01-19
申请人： MITSUBISHI ELECTRIC CORP
发明人： YOSHIDA YUKIHISA , CHABLOZ MARTIAL , JIAO JIWEI , MATSUURA TSUKASA , TSUTSUMI KAZUHIKO
IPC分类号： B81B3/00 , B81B7/00 , B81C1/00 , G01P1/02 , G01P15/08 , G01P15/125 , G02B26/08 , H01L29/84
摘要： A micro-device including an insulating substrate having a recess formed on the surface thereof, and a beam-like structure made of silicon formed on the front surface of the insulating substrate to surround the recess. The beam-like structure includes at least one functional section, and the functional section has a supporting section bonded onto the insulating substrate and at least one cantilever formed integrally with the supporting section while extending across the recess. The micro device also has an electrically conductive film electrically connected with the supporting section and formed on the surface of the recess at least in a portion right under a cantilever. The electrically conductive film prevents the surface of the recess from being positively charged in the dry etching process. Thus the etching gas having positive charge is not subjected to electrical repulsion of the recess and does not impinge on the back surface of the silicon substrate, and therefore erosion of the cantilever does not occur. As a result, since the beam-like structure is formed with high accuracy in the shape and dimensions, the micro device of the present invention can improve a high reliability and a degree of freedom in design of the micro device.

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