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1. 发明专利

JP2002313095A SEMICONDUCTOR DEVICE AND MEMORY REPLACING METHOD 失效
公开(公告)号：JP2002313095A
公开(公告)日：2002-10-25
申请号：JP2001113336
申请日：2001-04-12
申请人： MITSUBISHI ELECTRIC CORP
发明人： WATABE HAJIME
IPC分类号： G01R31/28 , G06F12/16 , G11C17/00 , G11C29/00 , G11C29/04 , G11C29/12
摘要： PROBLEM TO BE SOLVED: To obtain a semiconductor device in which a memory replacing signal for replacing a defective bit of a memory can be generated accurately, and a memory replacing method. SOLUTION: In a device generating a memory replacing LT output for replacing a defective bit of a memory by fusing a fuse 1A, the device incorporates an AD converter 4 obtaining a signal for discriminating a resistance value in accordance with a resistance value of the fuse 1A.

2. 发明专利

JPH07235612A MEMORY CELL STRUCTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH07235612A
公开(公告)日：1995-09-05
申请号：JP2555094
申请日：1994-02-23
申请人： MITSUBISHI ELECTRIC CORP
发明人： WATABE HAJIME
IPC分类号： H01L27/04 , G11C11/404 , H01L21/822 , H01L21/8242 , H01L27/10 , H01L27/108
摘要： PURPOSE:To provide the memory cell structure of a semiconductor device in which capacitor leakage through the source of a transistor can be prevented effectively by keeping the capacitor disconnected from the transistor all the time except for write and read operations. CONSTITUTION:The title memory cell structure of a semiconductor device a charge storage capacitor 101, a first transistor 103 which controls the charge and discharge of the capacitor 101, and a second transistor 125 connected between the capacitor 101 and the first transistor 103 when to disconnect the former from the latter the capacitor 101 has been charged.

3. 发明专利

JPH08171792A SEMICONDUCTOR STORAGE 失效
公开(公告)号：JPH08171792A
公开(公告)日：1996-07-02
申请号：JP31300794
申请日：1994-12-16
申请人： MITSUBISHI ELECTRIC CORP
发明人： WATABE HAJIME
IPC分类号： G11C11/16
摘要： PURPOSE: To provide a semiconductor storage provided with a memory cell suppressing disappearance of information. CONSTITUTION: The memory cell 50 incorporates a coil 57 provided with an N channel MOS transistor 55 and a magnetic material 59, and the N channel MOS transistor 55 is connected to a P channel MOS transistor 51 and the N channel MOS transistor, and one end of the coil 59 is connected to a bias circuit 61. By that source potential Vcc is applied to the bias circuit 61 through the P channel MOS transistor 51, a current flows through the coil 57 also, and magnetization in a certain direction occurs in the magnetic material 59, and by that the current flows from the bias circuit 61 through the grounded potential GND through the N channel MOS transistor, the current flows through the coil 57 also, and the magnetization in the different direction occurs in the magnetic material 59. By the direction of the magnetization in such a manner, different information are stored.

4. 发明专利

JP2001201533A SEMICONDUCTOR DEVICE WITH BUILT-IN BURN-IN CIRCUIT AND TEST METHOD THEREOF 失效
公开(公告)号：JP2001201533A
公开(公告)日：2001-07-27
申请号：JP2000012780
申请日：2000-01-21
申请人： MITSUBISHI ELECTRIC CORP
发明人： WATABE HAJIME
IPC分类号： G01R31/3183 , G01R31/26
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device with a built-in burn-in circuit and a test method thereof capable of performing screening suitable for actual usage. SOLUTION: A signal for burning-in is applied to each block 1a, 1b, 1c... composing a semiconductor device. An oscillation circuit 2a, 2b, 2c... for a dynamic burning-in is contained in each block 1a, 1b, 1c... composing the semiconductor device to set up a different oscillation frequency for each block 1a, 1b, 1c....

5. 发明专利

JP2000150606A PLASMA DAMAGE DETECTING DEVICE AND PLASMA DAMAGE EVALUATING METHOD 失效
公开(公告)号：JP2000150606A
公开(公告)日：2000-05-30
申请号：JP31733098
申请日：1998-11-09
申请人： MITSUBISHI ELECTRIC CORP
发明人： WATABE HAJIME
IPC分类号： H01L21/822 , H01L21/66 , H01L23/544 , H01L27/04
摘要： PROBLEM TO BE SOLVED: To inexpensively evaluate the damage given to a gate insulating film by charges entering contact holes or through holes due to a plasma process with high accuracy in a short time by providing a device which can detect the damage with high sensitivity. SOLUTION: A plasma damage detecting device PD1 provided with a MOS transistor M1, first-layer wiring IL1, a contact hole group H10, and second-layer wiring IL2 is simultaneously formed in part of a product wafer at the time of manufacturing the wafer. After the product wafer is completed, the plasma damage given to a gate insulating film is evaluated by estimating the service life of the transistor M1 of the detecting device PD1 by measuring the parameter of the transistor M1 (such as the gate current or substrate current when a hot carrier stress is impressed) for a short time and collating the measured parameter with the record of the correlation between already obtained service lives and the parameter.

6. 发明专利

JPH11238657A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH11238657A
公开(公告)日：1999-08-31
申请号：JP3869298
申请日：1998-02-20
申请人： MITSUBISHI ELECTRIC CORP
发明人： WATABE HAJIME , MUKOGAWA YASUKAZU
IPC分类号： H01L21/66 , H01L21/02
摘要： PROBLEM TO BE SOLVED: To obtain a semiconductor device, capable of referring to the information of a wafer process causing the failure of reliability of a product at investigating the cause of reliability failure. SOLUTION: A device forming region 4 and a recording region 5 are formed on a chip 2. Information for individually recognizing each chip 2 obtained after separating a wafer 1 into individual chips 2 in an assembly process and information relating to items causing reduction in the reliability as a semiconductor device product are recorded in the region 5. When a nonconformity in a product is detected in a final test process, a package is destroyed, the chip 2 is extracted from the inside of the package, and information recorded in the recording area 5 of the extracted chip 2 is read out to obtain the defect information and foreign substance information of a pattern related to the chip 2.

7. 发明专利

JPH104189A MANUFACTURE OF NONUNIFORM FIELD EFFECT TRANSISTOR 失效
公开(公告)号：JPH104189A
公开(公告)日：1998-01-06
申请号：JP15664496
申请日：1996-06-18
申请人： MITSUBISHI ELECTRIC CORP
发明人： WATABE HAJIME
IPC分类号： H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a transistor having a high reliability of a gate oxide film and high hot carrier resistance and suppress the short channel effect. SOLUTION: A gate oxide film 28 and polysilicon 1 to be a gate are formed on a channel region which connects a source region 2 to a drain region 3 on a substrate 50. The impurity concn. of the polysilicon 1 is low in an end part 1a near the source region 2 or drain region 3 and high in a central part. Such a nonuniform impurity concn. permits the polysilicon 1 to be depleted in the end part 1a, resulting in a lower carrier concn. than in the central part. When a voltage is applied to the polysilicon 1, the effective field at the end part 28a of the oxide film 28 and channel end 50a existing below it fades. This means that the field at the channel region is controllable nonuniformly.

8. 发明专利

JPH08339946A SEMICONDUCTOR BOARD, ITS MANUFACTURE AND ITS USE METHOD 失效
公开(公告)号：JPH08339946A
公开(公告)日：1996-12-24
申请号：JP24616595
申请日：1995-09-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： KIMURA YASUHIRO , YAMAUCHI KEIJI , YAMAMOTO HIDEKAZU , YAMAMOTO SHIGEHISA , KATSUMATA MASABUMI , MUKOGAWA YASUKAZU , WATABE HAJIME , KUME MORIHIKO
IPC分类号： H01L21/02
摘要： PURPOSE: To avoid lowering of mechanical strength, reduction of an effective use area and irregularities of a resist film, etc., by forming a detection sign for detecting crystal orientation of a semiconductor wafer in a specified region of a semiconductor wafer whose outer circumferential part is a circle all over. CONSTITUTION: An impurity region 2 for detecting crystal orientation of a silicon wafer 1 is formed in an outer circumferential part of the silicon wafer 1 in a semiconductor substrate. An absorption amount of infrared ray 9 passing through the silicon wafer 1 is measured by a combination of an infrared ray generation device 8a and an infrared ray detector 8b. In the impurity region 2, an absorption amount of infrared ray is large as compared with a part except the region since there is infrared ray absorption due to containing impurities. Therefore, a position of the impurity region 2 is detected by detecting a point wherein the infrared ray absorption amount becomes large. Crystal orientation of the silicon wafer 1 can be readily specified in this way.

9. 发明专利

JPH0864631A BONDING PAD 失效
公开(公告)号：JPH0864631A
公开(公告)日：1996-03-08
申请号：JP20098794
申请日：1994-08-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： WATABE HAJIME
IPC分类号： H01L21/60
摘要： PURPOSE: To reduce plasma damage caused by antenna effect in one plasma step of production process. CONSTITUTION: The bonding pad comprises wirings 1a, 1b connected with a circuit formed on a semiconductor chip, and bonding pads 2a, 2b separated from the wirings through a gap. At the time of bonding, the wirings are connected with the bonding pads through ball bonds 4a, 4b thus connecting leads 5a, 5b with the circuit. Although charges are stored in a large bonding pad during a plasma step, they have substantially no effect because the circuit is not connected with the bonding pad.

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