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1. 发明专利

FR2714531B1 未知
公开(公告)号：FR2714531B1
公开(公告)日：1997-01-10
申请号：FR9415656
申请日：1994-12-26
申请人： MITSUBISHI ELECTRIC CORP
发明人： ONO TOMOHIKO
IPC分类号： H01P1/22 , H03H7/25
摘要： A current bias-type variable attenuator. Two PIN diodes are disposed in series to each other and in the forward direction on a bias current path. When a bias voltage is applied to a bias terminal, d.c. current flows in the order of a combination output port, an in-phase output port, a first PIN diode, an input port, a 900 DEG -delayed phase output port, and a second PIN diode, or in the order of the combination output port, the in-phase output port, the first PIN diode, the second PIN diode, the 900 DEG -delayed phase output port, and the input port. Since d.c. current flowing through the first PIN diode and d.c. current flowing through the second PIN diode have an equal value, an RF resistance of the first PIN diode and that of the second PIN diode are balanced.

2. 发明专利

DE19616803A1 Nonlinear distortion compensation unit 未知
公开(公告)号：DE19616803A1
公开(公告)日：1996-10-31
申请号：DE19616803
申请日：1996-04-26
申请人： MITSUBISHI ELECTRIC CORP
发明人： OGURA SATOSHI , SEINO KIYOHARU , ONO TOMOHIKO , KAMIKOKURA AKIHIRO , HIROSE HARUZO
IPC分类号： H03F1/32 , H03G1/00 , H03F3/193
摘要： The compensation unit has an input circuit (7) which is connected to the gate electrode (4) of a semiconductor element e.g. a transistor. The output circuit (8) is connected to either the drain (5) or source (6) electrode. The remaining electrode is earthed. The external DC bias voltage is calculated for the transistor electrodes. Pref. the source/drain/gate electrodes include a resistive conductor which is earthed.

3. 发明专利

GB2285190B Variable attenuator 未知
公开(公告)号：GB2285190B
公开(公告)日：1998-10-14
申请号：GB9423568
申请日：1994-11-22
申请人： MITSUBISHI ELECTRIC CORP
发明人： ONO TOMOHIKO
IPC分类号： H01P1/22 , H03H7/25
摘要： A current bias-type variable attenuator. Two PIN diodes are disposed in series to each other and in the forward direction on a bias current path. When a bias voltage is applied to a bias terminal, d.c. current flows in the order of a combination output port, an in-phase output port, a first PIN diode, an input port, a 900 DEG -delayed phase output port, and a second PIN diode, or in the order of the combination output port, the in-phase output port, the first PIN diode, the second PIN diode, the 900 DEG -delayed phase output port, and the input port. Since d.c. current flowing through the first PIN diode and d.c. current flowing through the second PIN diode have an equal value, an RF resistance of the first PIN diode and that of the second PIN diode are balanced.

4. 发明专利

GB2285190A Variable attenuator using hybrid and PIN diodes 未知
公开(公告)号：GB2285190A
公开(公告)日：1995-06-28
申请号：GB9423568
申请日：1994-11-22
申请人： MITSUBISHI ELECTRIC CORP
发明人： ONO TOMOHIKO
IPC分类号： H01P1/22 , H03H7/25
摘要： PIN diodes (12a, 12b) are disposed in series to each other and in the forward direction on a d.c. current path. When a bias voltage is applied to a terminal (10b), d.c. current flows (Figs. 4, 7, 8) in the order of a port (7), a port (5), a PIN diode (12a), a port (4), a port (6), and a PIN diode (12b), or (Fig. 1) in the order of the port (7), the port (5), the PIN diode (12a), the PIN diode (12b), the port (6), and the port (4). Since d.c. current flowing through the PIN diode (12a) and d.c. current flowing through the PIN diode (12b) have an equal value, an RF resistance of the PIN diode (12a) and that of the PIN diode (12b) are balanced.

5. 发明专利

FR2733646B1 未知
公开(公告)号：FR2733646B1
公开(公告)日：1998-11-27
申请号：FR9605329
申请日：1996-04-26
申请人： MITSUBISHI ELECTRIC CORP
发明人： OGURA SATOSHI , SEINO KIYOHARU , ONO TOMOHIKO , KAMIKOKURA AKIHIRO , HIROSE HARUZO
IPC分类号： H03F1/32 , H03G1/00
摘要： A small-sized distortion compensation circuit is disclosed. In a semi-conductor element having three terminals, its gate is used as an input terminal. One of the drain and source is used as an output terminal, and the other is grounded. This structure does not need a conventionally used circuit comprising a complicated combination of distributors, couplers and attenuators, enabling the circuit to be smaller.

6. 发明专利

FR2733646A1 未知
公开(公告)号：FR2733646A1
公开(公告)日：1996-10-31
申请号：FR9605329
申请日：1996-04-26
申请人： MITSUBISHI ELECTRIC CORP
发明人： OGURA SATOSHI , SEINO KIYOHARU , ONO TOMOHIKO , KAMIKOKURA AKIHIRO , HIROSE HARUZO
IPC分类号： H03F1/32 , H03G1/00
摘要： A small-sized distortion compensation circuit is disclosed. In a semi-conductor element having three terminals, its gate is used as an input terminal. One of the drain and source is used as an output terminal, and the other is grounded. This structure does not need a conventionally used circuit comprising a complicated combination of distributors, couplers and attenuators, enabling the circuit to be smaller.

7. 发明专利

JPH08130423A HIGHER HARMONIC WAVE SUPPRESSING CIRCUIT 失效
公开(公告)号：JPH08130423A
公开(公告)日：1996-05-21
申请号：JP26688594
申请日：1994-10-31
申请人： MITSUBISHI ELECTRIC CORP
发明人： KIYONO KIYOHARU , KAMIOGURA AKIHIRO , ONO TOMOHIKO , OGURA MEGUMI
IPC分类号： H03F3/60 , H01P5/02 , H03F1/08
摘要： PURPOSE: To provide a higher harmonic wave suppressing circuit with a function for suppressing the higher harmonic wave generated from a semiconductor element without affecting the characteristics of a high output amplifier or the like with a basic wave. CONSTITUTION: This circuit is provided with a high impedance line 11, one terminal of which is connected to a main line 6 consisting of an output matching circuit 3 of the high output amplifier or the like, equipped with the length of a 1/4 wavelength in the basic wave and top end opened lines 12 and 17 parallelly connected to the other end of this high impedance line 11 and equipped with the lengths of 1/4 and 1/8 wavelengths for the basic wave. The impedance of a higher harmonic wave suppressing circuit 16 is increased for the basic wave and decreased for a double wave so that the double wave caused by the non-linearity of the semiconductor element can be fully reflected and the higher harmonic wave component outputted from the high output amplifier or the like can be extremely suppressed. Therefore, an adverse influence upon the other equipment can be eliminated.

8. 发明专利

JPH0256106A LOW DISTORTION AMPLIFIER 失效
公开(公告)号：JPH0256106A
公开(公告)日：1990-02-26
申请号：JP20771188
申请日：1988-08-22
申请人： MITSUBISHI ELECTRIC CORP
发明人： ONO TOMOHIKO
IPC分类号： H03F1/32
摘要： PURPOSE:To improve cross modulation distortion of a multi-stage amplifier at a broad dynamic range by using a detection diode connecting to a FET bias circuit of the multi-stage amplifier so as to detect a beat component caused in the occurrence of cross modulation distortion and feeding it back to other FET. CONSTITUTION:A detection diode 8, a bias resistor 9 and a controller 10 are provided to the amplifier. A frequency DELTAf passing through a block capacitor 3b is detected by the diode 8, a detection current caused thereby is subject to voltage conversion at a resistor 9 and the result is given to the controller 10. The output of the controller 10 is given to a bias terminal 4a of the 1st FET 1a. Since the controller 10 feeds back a beat voltage resulting from the DELTAf of the diode 8 negatively to the FET 1a, the DELTAf component is suppressed. The level difference of the signal at which cross modulation distortion is able to be reduced is expanded. Thus, the cross modulation distortion of the multi- stage amplifier is improved at a wide dynamic range.

9. 发明专利

JPS6422102A FET AMPLIFIER 失效
公开(公告)号：JPS6422102A
公开(公告)日：1989-01-25
申请号：JP17831487
申请日：1987-07-17
申请人： MITSUBISHI ELECTRIC CORP
发明人： ONO TOMOHIKO
IPC分类号： H03F1/52 , H03F1/42
摘要： PURPOSE:To protect an FET from an excessive input signal without complicating the constitution of an amplifier by adding a gate current detecting circuit to the FET bias circuit of an FET amplifier. CONSTITUTION:When the microwave input signal of an FET unit amplifier is excessive, the gate current of an FET 13 starts to flow, and by the gate current, a voltage drop is generated at a gate current detecting resistance 19. The voltage drop is amplified by a detecting amplifier 20 and converted to a suitable voltage, and thereafter, it is sent to a controller. The controller changes the gate bias potential of the FET 13 and narrows down a drain current. By the action, the amplification factor of the FET 13 is reduced.

10. 发明专利

JPS61292904A BALLAST FOR DISCHARGE LAMP 失效
公开(公告)号：JPS61292904A
公开(公告)日：1986-12-23
申请号：JP13515385
申请日：1985-06-20
申请人： MITSUBISHI ELECTRIC CORP
发明人： ONO TOMOHIKO
IPC分类号： H01F37/00
摘要： PURPOSE:To inhibit the temperature rise of a ballast largely while reducing noises by inserting a section between a coil and a case for a ballast proper with a thermal conductive rubber so as to be fast stuck. CONSTITUTION:A thermal condductive rubber 11 is installed fast stuck between a coil 3 and a case 5 in a ballast for a discharge lamp. Consequently, the heat generation of the coil 3 is transmitted excellently over the case 5 through the thermal conductive rubber 11, thus largely inhibiting the temperature rise of the ballast. Since the thermal conductive rubber 11 abounds in flexibility, no trouble, such as the compression of the coil 3, the layer short of projecting sections in the coil, etc. is generated. The thermal conductive rubber 11 has a large vibrationproof effect, and the propagation of vibrations over the case 5 from the surface of the coil 3 is suppressed, thus reducing noises.

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