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1. 发明专利

DE69623094D1 未知
公开(公告)号：DE69623094D1
公开(公告)日：2002-09-26
申请号：DE69623094
申请日：1996-01-22
申请人： MITSUBISHI ELECTRIC CORP
发明人： WADAKA SHUSOU , MISU KOICHIRO , NAGATSUKA TSUTOMU , KIMURA TOMONORI , KAMEYAMA SHUNPEI , MAEDA CHISAKO , YAMADA AKIRA , HONDA TOSHIHISA
IPC分类号： H01L41/08 , H01L41/187 , H01L41/22 , H03B5/30 , H03B5/32 , H03H3/02 , H03H9/02 , H03H9/05 , H03H9/13 , H03H9/145 , H03H9/17 , H03H9/25 , H03H9/54 , H03H9/56
摘要： Embodiments of the present invention provide a small and well-characterized bulk acoustic wave device by fabricating a filter having a wide band width or a resonator having a wide oscillation frequency range together with a semiconductor circuit. In embodiments of the present invention, a bulk acoustic wave device comprises a semiconductor substrate having a dielectric substance layer thereon, the dielectric substance layer has a ground conductor layer thereon, the ground conductor layer has a piezoelectric ceramic thin film thereon and the piezoelectric ceramic thin film has a conductive electrode pattern thereon. The thickness of the piezoelectric ceramic thin film is more than ten times the thickness of the ground conductor layer, and the wave number of acoustic waves that propagate in a direction parallel to a surface of the piezoelectric ceramic thin film multiplied by the thickness of the piezoelectric ceramic thin film is less than 2.

2. 发明专利

AU7235898A Dielectric thin film element and process for manufacturing the same 未知
公开(公告)号：AU7235898A
公开(公告)日：1998-12-08
申请号：AU7235898
申请日：1998-05-12
申请人： MITSUBISHI ELECTRIC CORP
发明人： MAEDA CHISAKO , YAMADA AKIRA , UMEMURA TOSHIO , UCHIKAWA FUSAOKI
IPC分类号： H01L37/02 , H01L41/316 , H01L41/187
摘要： A process for manufacturing a plurality of dielectric thin film devices by forming a lower layer on a substrate, coating a dielectric thin film on the lower layer, forming the dielectric thin film into a plurality of predetermined shapes, and, if desired, forming an upper structure on each of the plurality of dielectric thin films, wherein the dielectric thin film is divisionally formed on the lower layer by using a mask after the lower layer is formed to have a stress in a direction opposite to that of the dielectric thin film, or alternatively the dielectric thin film is divided into predetermined shapes after being formed.

3. 发明专利

CA2163033A1 Film Bulk Acoustic Wave Device 未知
公开(公告)号：CA2163033A1
公开(公告)日：1996-05-25
申请号：CA2163033
申请日：1995-11-17
申请人： MITSUBISHI ELECTRIC CORP
发明人： WADAKA SHUSOU , MISU KOICHIRO , NAGATSUKA TSUTOMU , KIMURA TOMONORI , KAMEYAMA SHUNPEI , MAEDA CHISAKO , YAMADA AKIRA , HONDA TOSHIHISA
IPC分类号： H01L41/22 , H01L41/09 , H01L41/311 , H03H9/15 , H03H9/54 , H01L41/08 , H03H9/46

4. 发明专利

DE69623094T2 未知
公开(公告)号：DE69623094T2
公开(公告)日：2003-10-09
申请号：DE69623094
申请日：1996-01-22
申请人： MITSUBISHI ELECTRIC CORP
发明人： WADAKA SHUSOU , MISU KOICHIRO , NAGATSUKA TSUTOMU , KIMURA TOMONORI , KAMEYAMA SHUNPEI , MAEDA CHISAKO , YAMADA AKIRA , HONDA TOSHIHISA
IPC分类号： H01L41/08 , H01L41/187 , H01L41/22 , H03B5/30 , H03B5/32 , H03H3/02 , H03H9/02 , H03H9/05 , H03H9/13 , H03H9/145 , H03H9/17 , H03H9/25 , H03H9/54 , H03H9/56
摘要： Embodiments of the present invention provide a small and well-characterized bulk acoustic wave device by fabricating a filter having a wide band width or a resonator having a wide oscillation frequency range together with a semiconductor circuit. In embodiments of the present invention, a bulk acoustic wave device comprises a semiconductor substrate having a dielectric substance layer thereon, the dielectric substance layer has a ground conductor layer thereon, the ground conductor layer has a piezoelectric ceramic thin film thereon and the piezoelectric ceramic thin film has a conductive electrode pattern thereon. The thickness of the piezoelectric ceramic thin film is more than ten times the thickness of the ground conductor layer, and the wave number of acoustic waves that propagate in a direction parallel to a surface of the piezoelectric ceramic thin film multiplied by the thickness of the piezoelectric ceramic thin film is less than 2.

5. 发明专利

AU2712597A Piezoelectric thin film device 未知
公开(公告)号：AU2712597A
公开(公告)日：1998-12-08
申请号：AU2712597
申请日：1997-05-13
申请人： MITSUBISHI ELECTRIC CORP
发明人： YAMADA AKIRA , MAEDA CHISAKO , UMEMURA TOSHIO , UCHIKAWA FUSAOKI , MISU KOICHIRO , WADAKA SHUSOU , ISHIKAWA TAKAHIDE
IPC分类号： H03H3/02 , H03H9/13 , H03H9/17
摘要： A piezoelectric thin film device which is composed mainly of a substrate, a piezoelectric thin film formed on the substrate, and thin film electrodes formed on both the upper and lower surfaces of the thin film. The thin film is resonated by applying an AC voltage across the electrodes. A substrate removed section is formed by partially or entirely removing the substrate below the thin film and opened to both the front and rear surfaces of the substrate through openings so as to relieve the pressure variation in the substrate removed section below a resonant structure.

6. 发明专利

DE19841681A1 Electrode for a dielectric thin film component especially an ultrasonic wave oscillator 未知
公开(公告)号：DE19841681A1
公开(公告)日：1999-07-22
申请号：DE19841681
申请日：1998-09-11
申请人： MITSUBISHI ELECTRIC CORP
发明人： YAMADA AKIRA , SATO TAKEHIKO , MAEDA CHISAKO , UMEMURA TOSHIO , UCHIKAWA FUSAOKI
IPC分类号： H01L37/02 , H01L41/047 , H01L41/09 , H01L41/22 , H01L41/29 , H03H3/02 , H03H9/17 , H04R17/00 , H01L49/02
摘要： An electrode for a dielectric thin film component has a diffusion prevention layer (7) for preventing element diffusion from a substrate (1) or an adhesion layer (6) into an uppermost main conductor layer (8). An electrode for a dielectric thin film component has a main conductor layer (8) for electrical signal input/output from and to a dielectric thin film, an adhesion layer (6) for adhering the main conductor layer (8) to a substrate (1) and a diffusion prevention layer (7) between the main conductor layer (8) and the adhesion layer (6) for preventing element diffusion from the substrate or the adhesion layer (6) into the main conductor layer (8). Independent claims are also included for the following: (i) production of the above electrode by successively applying two metallic thin films onto a substrate, subjecting the thin films to oxidation or nitriding and applying a further metallic thin film; and (ii) an ultrasonic wave oscillator with the above electrode or with an electrode produced by the above method. Preferred Features: The main conductor layer (8) consists of Pt, the diffusion prevention layer (7) consists of platinum and titanium oxides and the adhesion layer (6) consists of titanium.

7. 发明专利

AU2652797A Dielectric thin film element and method for manufacturing the same 未知
公开(公告)号：AU2652797A
公开(公告)日：1998-12-08
申请号：AU2652797
申请日：1997-05-13
申请人： MITSUBISHI ELECTRIC CORP
发明人： MAEDA CHISAKO , YAMADA AKIRA , UMEMURA TOSHIO , UCHIKAWA FUSAOKI
IPC分类号： H01L37/02 , H01L41/316 , H01L27/04 , H01L41/08 , H01L21/31 , C01G21/02 , C01G23/04
摘要： A process for manufacturing a plurality of dielectric thin film devices by forming a lower layer on a substrate, coating a dielectric thin film on the lower layer, forming the dielectric thin film into a plurality of predetermined shapes, and, if desired, forming an upper structure on each of the plurality of dielectric thin films, wherein the dielectric thin film is divisionally formed on the lower layer by using a mask after the lower layer is formed to have a stress in a direction opposite to that of the dielectric thin film, or alternatively the dielectric thin film is divided into predetermined shapes after being formed.

8. 发明公开

EP1152475A4 THIN-FILM PIEZOELECTRIC DEVICE 审中-公开
标题翻译：压电薄膜COMPONENT
公开(公告)号：EP1152475A4
公开(公告)日：2007-02-21
申请号：EP00921111
申请日：2000-05-09
申请人： MITSUBISHI ELECTRIC CORP
发明人： MISU KOICHIRO , YOSHIDA KENJI , IBATA KOJI , WADAKA SHUSOU , NAGATSUKA TSUTOMU , UCHIKAWA FUSAOKI , YAMADA AKIRA , MAEDA CHISAKO
IPC分类号： H03H3/04 , H03H9/02 , H03H9/17 , H01L41/08
CPC分类号： H03H9/174 , H03H3/04 , H03H9/02133 , H03H9/02157 , H03H9/176 , H03H2003/0428
摘要： A thin-film piezoelectric device comprises a silicon substrate (1); a dielectric film (21) including a silicon nitride film (16) formed on the silicon substrate (1) and a silicon oxide film (2) formed on the silicon nitride film (16); a lower electrode (3) formed on the dielectric film (21); a piezoelectric film (17) formed on the lower electrode (3); and an upper electrode (5) formed on the piezoelectric film (17). To form a via hole (6), that part of the silicon substrate (1) opposed to the area including the upper electrode (5) is removed from the bottom of the silicon substrate (1) to the interface with the silicon nitride film (16).

9. 发明专利

JP2010137244A Metal bonded body, and method for manufacturing the same 审中-公开
标题翻译：金属结合体及其制造方法
公开(公告)号：JP2010137244A
公开(公告)日：2010-06-24
申请号：JP2008314412
申请日：2008-12-10
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： MAEDA AKIRA , MAEDA CHISAKO , ARAKI TAKESHI , YAMADA AKIRA
IPC分类号： B23K1/20 , B23K31/02 , B23K103/18
摘要： PROBLEM TO BE SOLVED: To provide a method for inexpensively manufacturing a metal bonded body which does not require any ultrasonic oscillation device or any plating apparatus, and a metal bonded body capable of suppressing degradation of the bonding strength caused by the long time use under a high-temperature and high-humid environment.
SOLUTION: The method includes: a pretreatment step of setting the oxygen concentration in a surface of a copper member and a surface of an aluminum member to be ≤5,000 ppm; and a heating step of executing the heating at the temperature equal to or higher than the melting point of a bonded body and equal to or lower than the melting point of the aluminum member in the atmosphere of the oxygen concentration of ≤1,000 ppm.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种低成本地制造不需要任何超声波振动装置或任何电镀装置的金属接合体的方法，以及能够抑制长时间引起的接合强度劣化的金属接合体在高温高湿环境下使用。解决方案：该方法包括：将铜构件的表面和铝构件的表面中的氧浓度设定为≤5,000ppm的预处理步骤; 以及加热步骤，其在等于或高于粘合体的熔点的温度下进行加热，并且在氧浓度≤1,000ppm的气氛中等于或低于铝构件的熔点。版权所有（C）2010，JPO＆INPIT

10. 发明专利

JP2004304113A Multilayer ceramic package 审中-公开
标题翻译：多层陶瓷包装
公开(公告)号：JP2004304113A
公开(公告)日：2004-10-28
申请号：JP2003097995
申请日：2003-04-01
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： YAMASHITA HIDE , YAMADA AKIRA , NOZAKI AYUMI , SAITO KIYOSHI , KAWAMATA SUSUMU , MAEDA CHISAKO
IPC分类号： C04B35/80 , H01L23/12 , H01L23/13 , H01L23/15 , H05K3/46
摘要： PROBLEM TO BE SOLVED: To provide a multilayer ceramic package which can equally suppress the shrinkage during ceramic sintering and reduce degradation of internal circuit pattern accuracy caused by the dispersion of the shrinkage. SOLUTION: The multilayer ceramic package which is formed by simultaneously calcinating a low temperature calcinated green sheet composed of a low temperature sintered ceramic material and a conductive paste film formed on the sheet comprises a low temperature calcinated green sheet layer 1 in which internal circuit patterns are formed, and low-shrinking green sheet layers 2 which is overlapped on the low temperature calcinated green sheet layer and formed of a ceramic filament textile substrate as a base material. COPYRIGHT: (C)2005,JPO&NCIPI

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