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1. 发明公开

EP0790698A3 Method of driving power converter 失效
标题翻译：一种用于控制功率转换器的方法
公开(公告)号：EP0790698A3
公开(公告)日：1998-12-02
申请号：EP96112039
申请日：1996-07-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： MAJUMDAR GOURAB , HATAE SHINJI
IPC分类号： H02M7/537 , H02M7/5387 , H03K17/06 , H03K17/082
CPC分类号： H02M7/5387 , H03K17/0828
摘要： Disclosed is a method of driving a power converter (I10) which can simplify a charging sequence of a charge pump capacitor (CP) to reduce the time required to design the device without using a voltage protective circuit. A charging pulse signal for a capacitor (CP) is provided as an input signal from an external control device (EC) substantially simultaneously as a control power source (PS) is switched on to provide a predetermined control power source voltage (V
PS ). A driver circuit (DR20) outputs a control signal (V
D ) to turn on a transistor (Q2) in a pulse-like manner, starting charging of the capacitor (CP). The charging pulse signal continues to be provided after completion of the charging of the capacitor (CP) and stops being supplied immediately before a PWM signal is provided.

2. 发明专利

DE10160118B4 未知
公开(公告)号：DE10160118B4
公开(公告)日：2008-09-25
申请号：DE10160118
申请日：2001-12-07
申请人： MITSUBISHI ELECTRIC CORP
发明人： MAJUMDAR GOURAB , HATAE SHINJI , YAMAMOTO AKIHISA
IPC分类号： H01L29/739 , H01L29/78 , H01L21/76 , H01L27/04
摘要： In a semiconductor substrate, semiconductor regions belonging to the IGBT are formed in an IGBT region and semiconductor regions belonging to the diode are formed in a diode region. The IGBT and the diode are connected in anti-parallel to each other. A trench in which an insulator is buried is formed between the IGBT region and the diode region. The insulator restricts the reverse recovery current which flows from the diode region into the IGBT region. Thus, semiconductor regions of an IGBT and a diode connected in anti-parallel with each other are fabricated in a single semiconductor substrate and the chip size is reduced.

3. 发明专利

FR2812477B1 未知
公开(公告)号：FR2812477B1
公开(公告)日：2004-02-13
申请号：FR0103102
申请日：2001-03-07
申请人： MITSUBISHI ELECTRIC CORP
发明人： MAJUMDAR GOURAB , IWASAKI MITSUTAKA , HATAE SHINJI , TAMETANI FUMITAKA , IWAGAMI TORU , YAMAMOTO AKIHISA
IPC分类号： H01L25/07 , H01L25/16 , H01L25/18 , H01L29/78 , H02M7/48 , H03K17/08 , H03K17/56
摘要： The power module comprises an insulator substrate (4), a base plate (2) having the role of a radiator or a heat sink fastened on one face of the substrate, an electrodes layer (6) formed on the other face of the substrate and carrying a circuit configuration which includes a semiconductor switching element (8), a freewheel diode (10) connected in antiparallel with the switching element, and a control integrated circuit (12) placed on the diode and used for controlling the switching element. The semiconductor switching element (8) is an insulated-gate bipolar transistor (IGBT), or a metal-oxide-semiconductor field-effect transistor (MOSFET). The insulator substrate (4) is preferentially of a material having high thermal conductivity. The control circuit (12) is mounted on the diode (10) by the intermediary of an insulator layer (14), for example of silicon nitride (Si3N4), and a fastening layer (16), for example of an insulating fastening agent. The switching element (8) allows a current through the freewheel diode (10) under the action of a counter-electromotive force which is generated at an instant of a switching operation and passes through the connecting wires (20). The control circuit (12) receives an input voltage to activate the switching element (8) on the basis of the input-output terminals (30), and by the intermediary of the connecting wires (20). A voltage and a current are applied to the electrodes layer (6) from a collector/drain terminal (32), and the voltage and the current are transmitted to an emitter/source terminal (31) from the diode (10) by the intermediary of the connecting wires (20). In the second embodiment, the switching element is adjacent to the diode, and the two are implemented in the form of a monolithic integrated circuit. In the third embodiment, the switching element, the diode, and the control circuit are mounted at the same level, and the three are implemented in the form of a monolithic integrated circuit, wherein the diode is inserted between the other two elements. In the fourth embodiment, the switching element is separated from the diode, and the diode and the control circuit are implemented in the form of a monolithic integrated circuit.

4. 发明公开

EP1401021A4 POWER SEMICONDUCTOR DEVICE 审中-公开
标题翻译： LEISTUNGSHALBLEITERBAUELEMENT
公开(公告)号：EP1401021A4
公开(公告)日：2008-03-26
申请号：EP01934340
申请日：2001-05-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： MAJUMDAR GOURAB , HATAE SHINJI , YAMAMOTO AKIHISA
IPC分类号： H01L27/088 , H01L21/82 , H01L21/8234 , H01L29/24 , H01L29/78
CPC分类号： H01L21/8213 , H01L21/823487 , H01L27/088 , H01L29/1608 , H01L29/7802
摘要： A semiconductor device is provided in which a plurality of MOSFETs including a vertical MOSFET is formed on a substrate. The device includes a silicon carbide substrate having front and back surfaces facing each other, an isolating region formed in the substrate to extend from the front surface to the back surface of the substrate, and first and second MOSFETs formed on opposite sides of the isolating region, respectively.
摘要翻译：一种半导体器件包括其上形成有包括垂直MOSFET的多个MOSFET的衬底。半导体器件包括具有相反表面的碳化硅衬底，在两个相对表面之间延伸的隔离区以及形成在隔离区的相对侧上的第一和第二垂直MOSFET。

5. 发明专利

DE102011082706A1 Gleichspannungs-Gleichspannungs-Wandler 未知
公开(公告)号：DE102011082706A1
公开(公告)日：2012-03-22
申请号：DE102011082706
申请日：2011-09-14
申请人： MITSUBISHI ELECTRIC CORP
发明人： HATAE SHINJI , HUSSEIN KHALID HASSAN
IPC分类号： H02M3/155 , H01L25/16
摘要： Ein Gleichspannungs-Gleichspannungs-Wandler wird geschaffen, der in der Lage ist, nicht nur einen Ausschaltverlust, sondern auch einen Einschaltverlust zu verringern. Ein Beschaltungskondensator (Cs) weist ein Ende, das mit einer Anode einer Hochsetzdiode (D1), einem Stromeingangsende eines Hochsetzschaltelements (Q1) und einem Hauptinduktor (L1) verbunden ist, auf. Eine erste Beschaltungsdiode (Ds1) weist eine Kathode, die mit dem anderen Ende des Beschaltungskondensators (Cs) verbunden ist, und eine Anode, die mit einer Kathode der Hochsetzdiode (D1) verbunden ist, auf. Eine zweite Beschaltungsdiode (Ds2) weist eine Anode, die mit der Kathode der ersten Beschaltungsdiode (Ds1) und dem anderen Ende des Beschaltungskondensators (Cs) verbunden ist, auf. Ein Beschaltungsinduktor (Ls) weist ein Ende, das mit der Anode der ersten Beschaltungsdiode (Ds1) verbunden ist, und ein anderes Ende, das mit einer Kathode der zweiten Beschaltungsdiode (Ds2) verbunden ist, auf.

6. 发明专利

DE69937203D1 未知
公开(公告)号：DE69937203D1
公开(公告)日：2007-11-08
申请号：DE69937203
申请日：1999-06-29
申请人： MITSUBISHI ELECTRIC CORP
发明人： TAKANASHI KEN , HATAE SHINJI , HIYAMA KAZUAKI , HUSSEIN KHALID HASSAN , TAMETANI FUMITAKA
IPC分类号： H02M7/5387 , H02M1/08
摘要： In order to prevent malfunction or breakdown due to surge voltage in a power converter for converting DC into AC or the like so as to supply electric power to a load, not only a control signal is transmitted, via a level shift circuit which is provided correspondingly to each of switching semiconductor elements constituting a main circuit and shifts a level of a reference potential at its output side so as to follow up variations of a reference potential of the switching semiconductor element, to the switching semiconductor element but a DC control power source for supplying electric power to the level shift circuit and a negative pole of the switching semiconductor element are connected to each other through at least one of an inductor and a resistance.

7. 发明专利

DE10339239A1 未知
公开(公告)号：DE10339239A1
公开(公告)日：2004-08-05
申请号：DE10339239
申请日：2003-08-26
申请人： MITSUBISHI ELECTRIC CORP
发明人： HATAE SHINJI , OKAMOTO KOREHIDE
IPC分类号： H01L23/373 , H01L25/07 , H01L25/18 , H01L23/12 , H01L23/36
摘要： The present invention is to provide a power semiconductor device including a heat radiator having a principal surface and an insulating substrate bonded on the principal surface of the heat radiator via a first solder layer. The power semiconductor device also includes at least one semiconductor chip mounted on the insulating substrate via a second solder layer. The insulating substrate has a thin-layer and thick-layer edges, and is bonded on the principal surface of the heat radiator so that the first solder layer has a thickness thinner towards a direction from the thin-layer edge to the thick-layer edge (T1>T2). Also, the semiconductor chip is mounted on the insulating substrate so that a first distance between the thick-layer edge and the semiconductor chip is less than a second distance between the thin-layer edge and the semiconductor chip (L1

8. 发明专利

DE10152930A1 未知
公开(公告)号：DE10152930A1
公开(公告)日：2002-10-02
申请号：DE10152930
申请日：2001-10-26
申请人： MITSUBISHI ELECTRIC CORP
发明人： MAJUMDAR GOURAB , HATAE SHINJI , YOSHIMURA KOUSUKE
IPC分类号： H02M7/5387 , H03K17/06 , H03K17/082 , H03K17/10 , H03K17/18 , H03K17/56 , H03K17/567 , H03K19/0175 , H03K19/0185 , H02M7/44

9. 发明公开

EP1143604A4 POWER CONVERSION DEVICE 有权
标题翻译：电源转换装置
公开(公告)号：EP1143604A4
公开(公告)日：2005-03-23
申请号：EP99973946
申请日：1999-06-29
申请人： MITSUBISHI ELECTRIC CORP
发明人： TAKANASHI KEN , HATAE SHINJI , HIYAMA KAZUAKI , KHALID HASSAN , TAMETANI FUMITAKA
IPC分类号： H02M1/08 , H02M7/5387
CPC分类号： H02M1/08 , H02M7/538 , H02M7/5387
摘要： A power conversion device which supplies power to a load after converting dc into ac, of which erroneous operation and destruction by a surge voltage is prevented and which is constructed such that a control signal is transmitted to a semiconductor switching element via a level shift circuit that is provided correspondingly to the semiconductor switching element constituting a main circuit and level-shifts a reference voltage on an output side so as to be able to follow up variations in reference voltage of the switching semiconductor element, and a dc control power source for supplying current to the level shift circuit and the negative electrode of the switching semiconductor element are connected together via at least one of an inductance and a resistor.

10. 发明公开

EP1178596A4 INVERTER DEVICE 有权
标题翻译：逆变装置
公开(公告)号：EP1178596A4
公开(公告)日：2004-06-02
申请号：EP00902877
申请日：2000-02-09
申请人： MITSUBISHI ELECTRIC CORP
发明人： YAMAMOTO AKIHISA , HIYAMA KAZUAKI , HATAE SHINJI
IPC分类号： H02M7/48 , H02M7/5387 , H03K17/08
CPC分类号： H02M7/53871 , H02M1/32 , H02M7/538

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