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1. 发明公开

EP1335214A4 PROJECTION LENS 审中-公开
标题翻译： PROJEKTIONSLINSE
公开(公告)号：EP1335214A4
公开(公告)日：2007-02-28
申请号：EP01978838
申请日：2001-10-19
申请人： MITSUBISHI CHEM CORP
发明人： HANDA KEISHIN , NISHIKAWA MANABU , MATSUSHITA YASUNORI , WATANABE HIROYUKI
IPC分类号： B29C37/00 , B29C43/02 , B29D11/00 , G02B5/10 , G02B5/30 , C23C14/14 , G02B1/10
CPC分类号： G02B5/10 , B29C37/0053 , B29C43/021 , B29D11/00413 , B29K2995/0022 , B29L2011/00 , B29L2011/0016 , B29L2011/0058 , G02B5/3083
摘要： A projection lens having a light weight and a large scale, produced inexpensively, and having a high-precision less distortion aspherical reflecting surface. The projection lens having a reflecting layer on a resin base having a predetermined curved surface is characterized in that the average of the in-face double-refraction phase difference per unit thickness to light vertically incident on an optical functional curved surface of the resin base is 30 nm/mm or less in at least 60% of the area of the optical functional surface. Alternatively, the projection lens has a reflecting layer on an optical function imparted surface at least 60% of the area of which has a surface roughness (Ra) of 200 Å or less.
摘要翻译：本发明的主题是提供一种重量轻且价格便宜的透镜，尽管如此，它是大的并且具有减小变形的高精度非球面反射表面。本发明提供一种投影透镜，其包括具有给定曲面的树脂基底和形成在树脂基底表面上的反射层，其特征在于，每单位厚度的平面双折射相位差的平均值，在与光学功能表面的面积的至少60％的区域中，垂直于树脂基底的弯曲光学功能表面的方向为30nm / mm以下。或具有在光学功能赋予表面上的反射层的投影透镜，其中至少60％的光学功能赋予表面具有200或更小的表面粗糙度（Ra）。

2. 发明专利

JP2001258389A METHOD FOR CULTIVATING PLANT 失效
公开(公告)号：JP2001258389A
公开(公告)日：2001-09-25
申请号：JP2000075227
申请日：2000-03-17
申请人： MITSUBISHI CHEM CORP
发明人： UKI WAKAYOSHI , WATANABE HIROYUKI
IPC分类号： A01G7/00
摘要： PROBLEM TO BE SOLVED: To provide a method for cultivating a plant, designed to efficiently regulate flower bud formation thereof. SOLUTION: This method for cultivating a plant is characterized by that the plant in growth is irradiated with artificial light comprising blue light having the maximum value of output wavelength of 400-500 nm and a photon flux density of >=10 μ mol/m2/s.

3. 发明专利

JP2001056959A OPTICAL RECORDING MEDIUM AND OPTICAL RECORDER 失效
公开(公告)号：JP2001056959A
公开(公告)日：2001-02-27
申请号：JP22961999
申请日：1999-08-16
申请人： MITSUBISHI CHEM CORP
发明人： KUNITOMO HARUO , EHASHI KATSUMI , WATANABE HIROYUKI , YOKOTA SHOJI , KITAYAMA KOZO
IPC分类号： G11B7/253 , G11B7/24 , G11B7/241
摘要： PROBLEM TO BE SOLVED: To obtain an optical recording medium which does not cause damage due to collision with an optical head even in a film surface incidence system by which recording density can be increased, does not contaminate an optical system such as the optical head and can give an optical recorder capable of good recording and reproduction and to obtain an optical recorder with the optical recording medium. SOLUTION: A reflecting layer and/or a dielectric layer, an optical recording layer, a dielectric layer, a protective layer and a transparent lubricative layer are successively laminated on a discoid substrate to obtain the objective optical recording medium. The substrate has >=50 GPa bending elastic modulus and the protective layer comprises grains of =2 g/cm3 density and 2-10 nm thickness. The lubricative layer comprises a poly(fluoro-ether)-base lubricant and the proportion of lubricant molecules adsorbed and bonded to the surface of the protective layer is >=90%. The optical recorder has the optical recording medium and a levitation type head and performs recording and/or reproduction.

4. 发明专利

JPH11196669A LIGHT SOURCE FOR PLANT GROWTH 失效
公开(公告)号：JPH11196669A
公开(公告)日：1999-07-27
申请号：JP214998
申请日：1998-01-08
申请人： TOKYO RIKAKIKAI KK , MITSUBISHI CHEM CORP
发明人： OSANAI ISATO , TAKAHASHI MASAKATSU , WATANABE HIROYUKI
IPC分类号： A01G7/00
摘要： PROBLEM TO BE SOLVED: To provide a light source capable of irradiating an adjusted light having a necessary wave length selectively or changing the range of light irradiation, easy for repairing and easy to increase the light source by purchasing or exchange the same as necessary. SOLUTION: This light source for growth of a plant is obtained by installing plural light emitting diodes having the same wave length on a long and narrow printed base plate 4 in one row, mounting plural connector-receiving parts 11 equipped with plural connecting parts of connectors for connecting with the electric power source 6 to a frame body 2 capable of mounting and demounting plural rows of the light sources 3 equipped with connectors for connecting with the electric power source, also capable of controlling a illuminance for each of the connector-receiving parts 11, mounting light sources 3 having different wave lengths at the frame body 2 in a combination, and connecting each connector 6 for connecting with the electric power source and for the light source 3 having the same wave length to one connector receiving part 11.

5. 发明专利

JPH09125239A SPUTTERING SYSTEM 失效
公开(公告)号：JPH09125239A
公开(公告)日：1997-05-13
申请号：JP28355995
申请日：1995-10-31
申请人： MITSUBISHI CHEM CORP
发明人： WATANABE HIROYUKI
IPC分类号： C23C14/08 , C23C14/34
摘要： PROBLEM TO BE SOLVED: To improve the reproducibility in forming a compd. thin film by providing a cooler at the back of a target and controlling the target temp. in sputtering. SOLUTION: A liq.-circulated temp. control part 4 is provided at the rear of the backing plate 3 to mount a target 2 in a sputtering device 1. A liq. inlet pipe 5 and a liq. outlet pipe 6 are connected to the temp. control part 4 to control the temp. A circulating path capable of controlling the temp. of the liq., i.e., the target 2, is formed by the liq. outlet pipe 6, liq. cooler 7, heater 10, temp. measuring device 11, pump 20 and liq. inlet pipe 5. The liq. temp. is controlled by detecting the temp. of the liq. in the circulating path with the measuring device 11 and comparing the detected value with a set value, and the liq. temp. is controlled within ±2 deg., preferably ±1 deg., of the set temp. Further, since the film thickness is varied with the fluctuation of the flow rate of the liq., the flow rate is controlled within ±20%, preferably ±10%, of the set value.

6. 发明专利

JPH0937648A CULTURE OF PLANT BY USING LIGHT SEMICONDUCTOR AS LIGHT SOURCE 失效
公开(公告)号：JPH0937648A
公开(公告)日：1997-02-10
申请号：JP19331295
申请日：1995-07-28
申请人： MITSUBISHI CHEM CORP
发明人： WATANABE HIROYUKI , TANAKA FUMIHIRO
IPC分类号： A01G1/00 , A01G7/00
摘要： PROBLEM TO BE SOLVED: To provide a method for culturing a plant, efficiently enabling excellent plant growth at a low cost without causing spindly growth of a plant and without essentially requiring a blue light. SOLUTION: This method for culturing a plant comprises a light semiconductor as a light source. Only a red light having a peak wavelength at 600-700nm is used. The quantity of light is changed in a region shown by the formula log y>=0.031x+1.28[(x): the number of days of culture (day), (y): the quantity of light of irradiation (μmol/m /s)].

7. 发明专利

JPH08205677A REGULATION OF NUTRIENT INGREDIENT CONTENT OF PLANT BODY 失效
公开(公告)号：JPH08205677A
公开(公告)日：1996-08-13
申请号：JP1415595
申请日：1995-01-31
申请人： MITSUBISHI CHEM CORP
发明人： TANAKA FUMIHIRO , WATANABE HIROYUKI , MURASE MAKOTO , ENDO MASAHIRO
IPC分类号： A01G7/00 , H01S5/00
摘要： PURPOSE: To efficiently regulate the content of nutrient ingredients in a plant body, increase a specific nutrient ingredient and remarkably improve the added value of the plant by controlling the strength of blue light, etc., contained in an artificial light source. CONSTITUTION: The content of a nutrient ingredient such as vitamin A or vitamin C of a plant body belonging to the family Compositate, Cruciferae, etc., is regulated by controlling the intensities of blue light at 400-500nm wavelength, red light at 600-700nm wavelength and far infrared light at 670-760nm wavelength contained in an artificial light source of a semiconductor device, etc.

8. 发明专利

JP2000207933A ILLUMINATION PANEL FOR PLANT CULTIVATION 失效
公开(公告)号：JP2000207933A
公开(公告)日：2000-07-28
申请号：JP338599
申请日：1999-01-08
申请人： MITSUBISHI CHEM CORP , COSMO PLANT KK
发明人： WATANABE HIROYUKI , UCHIYAMA HISAKAZU
IPC分类号： A01G7/00 , F21S2/00 , F21V31/00 , F21V31/04 , F21V33/00
摘要： PROBLEM TO BE SOLVED: To provide an illumination panel consuming little electric power and moreover having high durability even under highly humid environments. SOLUTION: This panel A is equipped with a base 1, a substrate 7 of a thin metal sheet adhered to the base 1, many light-emitting diodes 8 disposed on the substrate 7, a cover 2 disposed so as to make a space S between it and the base 1, and a sealing material interposed between the base 1 and the cover 2 to airtightly maintain the space to the external part. Dry air is filled in the space S, and desiccant 5 is contained in a frame material 3.

9. 发明专利

JPH11266703A LAMP FOR LIGHT CULTURE 失效
公开(公告)号：JPH11266703A
公开(公告)日：1999-10-05
申请号：JP9402798
申请日：1998-03-23
申请人： MITSUBISHI CHEM CORP , KATAKURA IND CO LTD
发明人： TANAKA FUMIHIRO , WATANABE HIROYUKI , TAKADA TATSUO
IPC分类号： A01G7/00 , F21V19/00
摘要： PROBLEM TO BE SOLVED: To provide a lamp for light culture which is a lamp useful for the light culture of plant, is capable of reducing a lighting cost and supplying a further uniform lighting effect. SOLUTION: In this lamp A for light culture equipped with a semiconductor light emitting part 2 for emitting light rays having 630-700 nm peak wavelength, the semiconductor light emitting part 2 is formed into a shape relatively projecting from its fitting standard face (a base plate 1). Otherwise, the semiconductor light emitting part is formed into a shape relatively recessed from the fitting standard face. In a preferable state, the angle of the optical axis of the semiconductor light emitting part 2 from the fitting standard face is 40-70 deg..

10. 发明专利

JPH08242694A METHOD FOR CULTURING PLANT 失效
公开(公告)号：JPH08242694A
公开(公告)日：1996-09-24
申请号：JP5001995
申请日：1995-03-09
申请人： MITSUBISHI CHEM CORP
发明人： WATANABE HIROYUKI , TANAKA FUMIHIRO , ENDO MASAHIRO
IPC分类号： A01G7/00 , H01L33/28 , H01L33/32 , H01L33/00
摘要： PURPOSE: To provide a light irradiation system suitably applicable to a plant culture device, reducing a power cost, improving light efficiency of plant, by using a light semiconductor as a light source, irradiating a plant with pulse light under specific conditions and efficiently culturing the plant. CONSTITUTION: A light semiconductor such as a light emitting diode is used as a light source and a plant is irradiated with pulse light having 0.5μsec to 20msec period and 20-60% duty ratio (DT ratio) at 300-5,000Lx average illuminance to culture the plant. The wavelength range of the light to be irradiated is preferably a wavelength range of 600-750nm of only red light and a wavelength range using both 600-750nm red light and 400-500nm blue light is preferable.

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