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    • 4. 发明专利
    • PLASMA PROCESSING DEVICE
    • JPS63246825A
    • 1988-10-13
    • JP8160487
    • 1987-04-01
    • MITSUBISHI ELECTRIC CORP
    • MINATO TSUNEAKI
    • H01L21/302H01L21/205H01L21/3065H01L21/31
    • PURPOSE:To obtain a plasma treatment device that can efficiently remove gas poison ous to a human body and stably perform work such as maintenance and cleaning by providing a ventilation system operating to ventilate the inside of a vacuum con tainer when a lid of the vacuum container provided with the lid that can be sealed up is opened. CONSTITUTION:In the case of maintenance and cleaning, firstly the vacuum valves 7g and 7f of an evacuation system 7 are closed and a fan 8a of a ventilation system 8 is moved together with a ventilation valve 8c is opened. When a lid 1a of a vacuum container 1 is opened in this state, the air entered inside the vacuum container 1 gets into the inside of the ventilation system 8 from a ventilation opening 1c owing to the suction force of the fan 8a of the ventilation system so as to be guided to a poisonous gas removing device. At this time, the gas and substances harmful for a human body inside the vacuum container 1 together with the air entered inside the vacuum container 1 get into the ventilation system 8 from the ventilation opening 1c to be guided to a harmful gas removing device for being removed. Thereby, the gas poisonous to a human body can be efficiently removed by the ventilation system 8 so as to be able to obtain a plasma treatment stably performing these kinds of work.
    • 10. 发明专利
    • SINGLE CRYSTAL PRODUCTION APPARATUS OF MAGNETIC FIELD IMPRESSION TYPE
    • JPH107486A
    • 1998-01-13
    • JP16012396
    • 1996-06-20
    • MITSUBISHI ELECTRIC CORP
    • MINATO TSUNEAKI
    • C30B15/00C30B29/06C30B33/04H01L21/208
    • PROBLEM TO BE SOLVED: To provide a single crystal production apparatus capable of impressing a radial cusped magnetic field of coaxial symmetry to the neighborhood of the center of a fusion of crystal material inside a crucible in a crystal pulling section to improve crystal properties by the use of a magnetic field generator for impressing a magnetic field into the fusion of crystal material. SOLUTION: This single crystal production apparatus comprises a single-crystal pulling section and a magnetic field generator section for providing a magnetic field for a fusion section for a single crystal material in such a configuration that on both sides of the crystal pulling section a pair of main coils and a pair of subsidiary coils which have a smaller diameter than that of the main coils and whose exciting direction is coaxial and opposite to the main coils. In this configuration of the single crystal production apparatus of magnetic field impression type shown in the figure, a crucible 2 filled with a single crystal fusion material 1 is heated by a heater 3 so as to be maintained constantly in fused condition. A seed crystal 4 is pulled up at a constant speed. The superconductive main coils 21a and subsidiary coils 21b generates a magnetic field in vertical direction as shown by the direction of field impression 11 in the crucible 2. As a result, the heat convection 8 induced by the heater 3 is substantially controlled by magnetic resistance caused by the magnetic field in the vertical direction.