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    • 1. 发明授权
    • Transpositional acoustic frequency range in EAS patients
    • EAS患者转位声频范围
    • US09113270B2
    • 2015-08-18
    • US13667142
    • 2012-11-02
    • MED-EL Elektromedizinische Geraete GmbH
    • Marek Polak
    • A61N1/36H04R25/00A61F11/04A61N1/05
    • H04R25/353A61F11/04A61N1/0541A61N1/36032A61N1/36036
    • An electric acoustic stimulation (EAS) hearing system includes a signal processor for processing an acoustic signal input to generate: i. an electrical communications signal representative of an upper electrical range of acoustic frequencies, and ii. an acoustic communications signal representative of a lower acoustic range of acoustic frequencies, the acoustic range including: (1) a lower subrange of acoustic frequencies perceivable by the patient with amplification, and (2) an upper subrange of acoustic frequencies not perceivable by the patient, wherein the signal processor uses frequency transposition to include the upper subrange in the lower subrange. An implanted electrical stimulation subsystem receives the electrical communications signal and delivers a corresponding electrical stimulation signal to auditory neural tissue of an implanted patient. An external acoustic stimulation subsystem receives the acoustic communications signal and delivers a corresponding amplified acoustic stimulation signal to the ear canal of the patient.
    • 电声刺激(EAS)听觉系统包括用于处理声信号输入的信号处理器,以产生:i。 代表声频上限电范围的电通信信号,以及ii。 声学通信信号,其表示声频的较低的声学范围,所述声学范围包括:(1)患者具有放大的可感知的较低的声频子范围,以及(2)所述患者不能感知到的声学频率的上部子范围 ,其中所述信号处理器使用频率转置将所述上部子范围包括在所述较低子范围内。 植入的电刺激子系统接收电通信信号并将相应的电刺激信号传递给植入患者的听觉神经组织。 外部声学刺激子系统接收声学通信信号并将相应的放大的声学刺激信号传送到患者的耳道。
    • 7. 发明授权
    • Tinnitus fitting method in CI and ABI patients
    • CI和ABI患者耳鸣适应方法
    • US09566435B2
    • 2017-02-14
    • US14927524
    • 2015-10-30
    • MED-EL Elektromedizinische Geraete GmbH
    • Marek Polak
    • A61N1/36A61N1/05
    • A61N1/36032A61N1/0541A61N1/36036A61N1/36039
    • A method is described for adjusting hearing implant operating parameters for electrode contacts in an implantable electrode array to minimize tinnitus in an implanted patient. A channel tinnitus masking stimulation level is measured for each electrode contact at which maximum tinnitus masking occurs, Ytin,n. A channel threshold stimulation level also is measured for each electrode contact that represents a lowest detectable stimulation level, Tmeas,n. And a channel maximum stimulation level is measured for each electrode contact that represents a maximum comfortable stimulation level, MCLmeas,n. Channel threshold stimulation level Tn and channel maximum stimulation level MCLn are then adjusted for each electrode contact as a function of the channel tinnitus masking stimulation level Ytin,n and tinnitus masking stimulation levels for adjacent electrode contacts, Ytin,adj.
    • 描述了一种用于调节可植入电极阵列中的电极接触的听力植入操作参数以最小化植入患者中的耳鸣的方法。 对于发生最大耳鸣掩蔽的每个电极接触,测量通道耳鸣屏蔽刺激水平,Ytin,n。 对于代表最低可检测刺激水平的每个电极接触,测量通道阈值刺激水平,Tmeas,n。 并且测量代表最大舒适刺激水平的每个电极接触器的通道最大刺激水平,MCLmeas,n。 然后针对每个电极接触,调整通道阈值刺激水平Tn和通道最大刺激水平MCLn作为通道耳鸣屏蔽刺激水平Ytin,n和用于相邻电极接触的耳鸣屏蔽刺激水平的函数Ytin,adj。
    • 8. 发明申请
    • Tinnitus Fitting Method in CI and ABI Patients
    • CI和ABI患者的耳鸣适配方法
    • US20160121117A1
    • 2016-05-05
    • US14927524
    • 2015-10-30
    • MED-EL Elektromedizinische Geraete GmbH
    • Marek Polak
    • A61N1/36A61N1/05
    • A61N1/36032A61N1/0541A61N1/36036A61N1/36039
    • A method is described for adjusting hearing implant operating parameters for electrode contacts in an implantable electrode array to minimize tinnitus in an implanted patient. A channel tinnitus masking stimulation level is measured for each electrode contact at which maximum tinnitus masking occurs, Ytin,n. A channel threshold stimulation level also is measured for each electrode contact that represents a lowest detectable stimulation level, Tmeas,n. And a channel maximum stimulation level is measured for each electrode contact that represents a maximum comfortable stimulation level, MCLmeas,n. Channel threshold stimulation level Tn and channel maximum stimulation level MCLn are then adjusted for each electrode contact as a function of the channel tinnitus masking stimulation level Ytin,n and tinnitus masking stimulation levels for adjacent electrode contacts, Ytin,adj.
    • 描述了一种用于调节可植入电极阵列中的电极接触的听力植入操作参数以最小化植入患者中的耳鸣的方法。 对于发生最大耳鸣掩蔽的每个电极接触,测量通道耳鸣屏蔽刺激水平,Ytin,n。 对于代表最低可检测刺激水平的每个电极接触,测量通道阈值刺激水平,Tmeas,n。 并且测量代表最大舒适刺激水平的每个电极接触器的通道最大刺激水平,MCLmeas,n。 然后针对每个电极接触,调整通道阈值刺激水平Tn和通道最大刺激水平MCLn作为通道耳鸣屏蔽刺激水平Ytin,n和用于相邻电极接触的耳鸣屏蔽刺激水平的函数Ytin,adj。